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51. 发明公开

KR1020050023163A 레지스트 제거용 조성물 有权
标题翻译：作为电极电路或显示装置的金属线形成铜箔的光刻胶去除组合物
公开(公告)号：KR1020050023163A
公开(公告)日：2005-03-09
申请号：KR1020030059628
申请日：2003-08-27
申请人： 주식회사 동진쎄미켐 , 엘지디스플레이 주식회사
发明人： 채기성 , 조규철 , 권오남 , 이경묵 , 황용섭 , 김성배 , 장석창 , 윤석일
IPC分类号： G03F7/32
摘要： PURPOSE: Provided is a solvent composition for removing photoresist used in patterning copper film for electronic circuit or display device having excellent removal of the photoresist remained on top portion of the patterned copper film. CONSTITUTION: The solvent composition comprises 10-30wt.% of at least one selected from N-methylethanolamine, diethylethanolamine and dimethylethanolamine; 10-80wt.% of glycol ether solvent; 9.5-50wt.% of polar solvent; and 0.5-10wt.% of corrosion-resistant agent. The photoresist film(40) is formed by vapor-depositing copper on substrate(10) to form a first metallic layer(11) and coating the photoresist on top portion of the first metallic layer(11). On top side of the photoresist film(40), mask(M) having permeable part(E) to pass light through and shield part(F) to block light is formed. After then, high energy activation ray radiates over top portion of the mask(M) to expose the photoresist film(40)match with the permeable part(E). After completing the exposure, the photoresist film is under development, thereby obtaining the pattern of copper film.
摘要翻译：目的：提供一种用于去除用于电子电路的铜膜图案的显影剂的溶剂组合物或具有优异去除残留在图案化铜膜的顶部上的光致抗蚀剂的显示装置。构成：溶剂组合物包含10-30重量％的选自N-甲基乙醇胺，二乙基乙醇胺和二甲基乙醇胺中的至少一种; 乙二醇醚溶剂10-80wt％; 9.5-50重量％极性溶剂; 和0.5-10重量％的耐腐蚀剂。光致抗蚀剂膜（40）通过在基板（10）上气相沉积铜形成第一金属层（11）并在第一金属层（11）的顶部上涂覆光致抗蚀剂而形成。在光致抗蚀剂膜（40）的顶侧，形成具有使光通过的屏蔽部（E）的透光部（E）和屏蔽部（F）遮挡光的掩模（M）。之后，高能激活光线辐射在掩模（M）的顶部上，以使光致抗蚀剂膜（40）与可渗透部分（E）相匹配。曝光完成后，光致抗蚀剂膜正在显影中，从而获得铜膜图案。

52. 发明公开

KR1020040060601A 구리용 레지스트 제거용 조성물 有权
标题翻译：铜的电阻去除组合物
公开(公告)号：KR1020040060601A
公开(公告)日：2004-07-06
申请号：KR1020020087408
申请日：2002-12-30
申请人： 엘지디스플레이 주식회사 , 주식회사 동진쎄미켐
发明人： 조규철 , 채기성 , 권오남 , 이경묵 , 황용섭 , 김성배 , 장석창
IPC分类号： G03F7/42
CPC分类号： C11D3/2068 , C11D1/22 , C11D7/263 , C11D7/34 , C11D11/0047
摘要： PURPOSE: A resist-removing composition for copper, a preparation method of an array substrate for a liquid crystal display using the composition and a preparation method of a copper wire pattern using the composition are provided, to remove resist for patterning a copper wire with preventing the corrosion of copper. CONSTITUTION: The resist-removing composition comprises 0.1-10 wt% of an alkylbenzene sulfonate; 10-99 wt% of a glycol ether compound; and 0.5-5 wt% of a corrosion inhibitor. Preferably the alkylbenzene sulfonate is at least one selected from the group consisting of benzenesulfonic acid, toluenesulfonic acid, dodecylbenzene sulfonic acid, tetrapropylbenzene sulfonic acid and phenol sulfonic acid; the glycol ether compound is at least one selected from the group consisting of ethylene glycol methyl ether, ethylene glycol, ethyl ether, ethylene glycol butyl ether, diethylene glycol methyl ether, diethylene glycol ethyl ether and diethylene glycol propyl ether; and the corrosion inhibitor is a mixture of a triazole-based compound and an antioxidizing agent, a mercapto-containing compound, or a mixture of a triazole-based compound, an antioxidizing agent and a mercapto-containing compound.
摘要翻译：目的：提供一种用于铜的抗蚀剂除去组合物，使用该组合物的液晶显示器阵列基板的制备方法和使用该组合物的铜线图案的制备方法，以除去预防铜线图案化的抗蚀剂铜的腐蚀。构成：抗蚀剂去除组合物包含0.1-10重量％的烷基苯磺酸盐; 10-99重量％的二醇醚化合物; 和0.5-5重量％的腐蚀抑制剂。优选地，烷基苯磺酸盐是选自苯磺酸，甲苯磺酸，十二烷基苯磺酸，四丙基苯磺酸和苯酚磺酸中的至少一种; 乙二醇醚化合物是选自乙二醇甲醚，乙二醇，乙醚，乙二醇丁醚，二甘醇甲醚，二乙二醇乙醚，二乙二醇丙醚中的至少一种; 防腐剂是三唑类化合物和抗氧化剂，含巯基化合物，三唑类化合物，抗氧化剂和含巯基化合物的混合物的混合物。

53. 发明公开

KR1020020049448A 케미칼 린스 조성물 有权
标题翻译：化学成分
公开(公告)号：KR1020020049448A
公开(公告)日：2002-06-26
申请号：KR1020000078621
申请日：2000-12-19
申请人： 주식회사 동진쎄미켐
发明人： 오창일 , 이상대 , 유종순 , 윤석일 , 김성배 , 박순희
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , G02F1/1333 , G03F1/82 , G03F7/40 , G03F7/422 , H01L21/02052 , H01L21/31133 , H01L21/6715
摘要： PURPOSE: A chemical rinse composition is provided to prevent the corrosion of a metal circuit pattern by finally removing a resist in a process of a TFT LCD device and a semiconductor device, and by rinsing stripper liquid remained. CONSTITUTION: The chemical rinse composition for rinsing a resist stripper comprises a) 0.05-3 wt.% of inorganic alkali or organic alkali represented by the formula(wherein R1-R4 are identical or different, and represents C1-4 alkyl group or C6-10 allyl group), b) 0.05-3 wt.% of at least one triazole-based anticorrosive agent, c) 0.1-30 wt.% of organic solvent, and d) 60-99 wt.% of water. The inorganic alkali is selected from a group consisting of potassium hydroxide, sodium hydroxide, sodium phosphate, sodium silicate, and a mixture thereof. The at least one triazole-based anticorrosive agent is selected from a group consisting of benzotriazole, tolyltriazole, carboxylic benzotriazole, 1-hydroxy benzotriazole(HBT), and nitro benzotriazole(NBT).
摘要翻译：目的：提供一种化学漂洗组合物，通过在TFT LCD器件和半导体器件的工艺中最终去除抗蚀剂，并通过冲洗残留的剥离液来防止金属电路图案的腐蚀。构成：用于冲洗抗蚀剂剥离剂的化学漂洗组合物包含：a）0.05-3重量％的由下式表示的无机碱或有机碱（其中R 1 -R 4相同或不同，并且表示C1-4烷基或C6- 10烯丙基），b）0.05-3重量％的至少一种三唑类防腐剂，c）0.1-30重量％的有机溶剂，和d）60-99重量％的水。无机碱选自氢氧化钾，氢氧化钠，磷酸钠，硅酸钠及其混合物。所述至少一种三唑类防腐剂选自苯并三唑，甲苯基三唑，羧酸苯并三唑，1-羟基苯并三唑（HBT）和硝基苯并三唑（NBT）。

54. 发明公开

KR1020020039052A 액정 디스플레이 디바이스용 레지스트 세정액 조성물 有权
标题翻译：用于液晶显示装置的电阻用清洁组合物
公开(公告)号：KR1020020039052A
公开(公告)日：2002-05-25
申请号：KR1020000068941
申请日：2000-11-20
申请人： 주식회사 동진쎄미켐
发明人： 오창일 , 이상대 , 윤석일 , 유종순 , 김성배 , 금영익 , 박순희
IPC分类号： G03F7/42
CPC分类号： G03F7/422 , G02F1/1333 , G03F7/0397 , G03F7/168 , G03F7/40 , H01L21/0273
摘要： PURPOSE: Provided is a cleansing composition capable of effectively removing resists unnecessarily attached to a large glass substrate used in production of liquid crystal display device. CONSTITUTION: The cleansing composition comprises (a) solvents selected from the group consisting of (i) monooxycarbonic acid ester, (ii) propyleneglycol monoalkylether, (iii) propyleneglycol monoalkylether acetate, (iv) alkyl ethanoate, and (v) alkyl lactate; and (b) fluorine based surfactants.
摘要翻译：目的：提供能够有效地除去不必要地附着在液晶显示装置的制造中使用的大型玻璃基板上的抗蚀剂的清洁剂。构成：清洁组合物包含（a）选自（i）单氧碳酸酯，（ii）丙二醇单烷基醚，（iii）丙二醇单烷基醚乙酸酯，（iv）烷基乙酸酯和（v）乳酸烷基酯）的溶剂; 和（b）氟基表面活性剂。

55. 发明公开

KR1020140056045A 인쇄전자용 구리 페이스트 조성물 审中-实审
标题翻译：印刷电子用铜膏组合物
公开(公告)号：KR1020140056045A
公开(公告)日：2014-05-09
申请号：KR1020130128938
申请日：2013-10-29
申请人： 주식회사 동진쎄미켐
发明人： 김성배 , 이승혁 , 임준환 , 한주경 , 유현석 , 김영모
IPC分类号： H01B1/22 , C09D201/00 , B41M1/00
摘要： The present invention relates to a copper paste composition for printed electronics, and more specifically, to a copper paste composition for printed electronics which includes oxidation-suppressed copper nanoparticles and has improved electric conductivity, adhesion on a substrate, and printability. Specifically, the copper paste composition for printed electronics according to the present invention shows improved conductivity and printability at atmospheric pressure by using copper particles coated with organic materials or copper-hetero metal nanoparticles. Particularly, when the composition uses copper-hetero metal nanoparticles, the composition obtains improved adhesion, thereby being applied to various printed electronic fields by substituting for expensive silver particles.
摘要翻译：本发明涉及一种用于印刷电子器件的铜膏组合物，更具体地说，涉及一种用于印刷电子器件的铜浆组合物，其包括氧化抑制的铜纳米颗粒，并且具有改善的导电性，基材上的粘附性和可印刷性。具体地说，本发明的印刷电子用铜膏组合物通过使用涂覆有有机材料或铜 - 杂金属纳米粒子的铜颗粒，显示出在大气压下的改进的导电性和印刷性。特别是，当组合物使用铜 - 杂金属纳米颗粒时，该组合物获得改进的粘合性，从而通过代替昂贵的银颗粒而应用于各种印刷电子领域。

56. 发明公开

KR1020140023730A 투명 전도성 막 코팅 조성물, 투명 전도성 막 및 투명 전도성 막의 제조 방법 审中-实审
标题翻译：用于透明导电膜的涂层组合物，透明导电膜及其制造方法
公开(公告)号：KR1020140023730A
公开(公告)日：2014-02-27
申请号：KR1020120090082
申请日：2012-08-17
申请人： 주식회사 동진쎄미켐
发明人： 유관태 , 이성현 , 김경은 , 이병욱 , 김성배
IPC分类号： C09D5/24 , C09D7/12 , H01B1/24
CPC分类号： H01B1/24 , C08K9/04 , C09D5/24 , C09D7/62
摘要： The present invention relates to a coating composition for a transparent conductive film, a transparent conductive film, and a manufacturing method thereof, and more specifically, to a coating composition for a transparent conductive film, a transparent conductive film, and a manufacturing method thereof, wherein the coating composition includes graphene oxide, a surface treatment agent which selectively removes only the epoxide group from the surface of graphene, and a polar solvent. A film with improved conductivity can be obtained using the coating compositions of the present invention, thereby the composition and a transparent conductive film using the same can be used for shielding electromagnetic waves and preventing static electricity.
摘要翻译：本发明涉及透明导电膜用涂料组合物，透明导电膜及其制造方法，更具体地，涉及透明导电膜用涂料组合物，透明导电膜及其制造方法，其中所述涂料组合物包括氧化石墨烯，从石墨烯表面选择性除去环氧基团的表面处理剂和极性溶剂。可以使用本发明的涂料组合物获得具有改善的导电性的膜，由此可以使用组合物和使用其的透明导电膜来屏蔽电磁波并防止静电。

57. 发明授权

KR101221560B1 변성된 포토레지스트 제거를 위한 반도체 소자용 박리액조성물 有权
标题翻译：用于去除变色光电二极管的半导体器件的去除组合物
公开(公告)号：KR101221560B1
公开(公告)日：2013-01-14
申请号：KR1020050081628
申请日：2005-09-02
申请人： 주식회사 동진쎄미켐
发明人： 윤석일 , 김성배 , 정종현 , 박희진 , 김병욱
IPC分类号： G03F7/42
摘要： 본 발명은 집적회로, 고집적회로, 초고집적회로 등의 반도체 소자류를 제조하는 공정 중에서 포토레지스트를 제거하기 위해 사용되는 포토레지스트 박리액 조성물에 관한 것으로, 상기 조성물은 (a) 과산화수소 또는 과산화수소 유도체 0.1 내지 10 중량%, (b) 유기 용매 5 내지 50 중량%, (c) 유기 아민 0.5 내지 30 중량%, (d) 물 5 내지 60 중량%, (e) 암모늄 염 0.0001 내지 20 중량%, (f) 부식방지제 0.4 내지 10 중량%, 및 (g) 과산화수소 또는 과산화수소 유도체의 안정제 0.5 내지 30 중량%를 포함한다.
본 발명에 따른 포토레지스트 박리액 조성물은 과산화수소 또는 과산화수소 유도체를 포함하여 하드베이크, 건식식각, 애슁 및/또는 이온주입공정에 의하여 경화 및 변성된 포토레지스트막을 효과적으로 제거할 뿐 아니라, 상기 공정중 하부의 금속 막질로부터 식각되면서 나온 금속성 부산물에 의하여 변질된 포토레지스트막 까지도 저온에서 짧은 시간 내에 용이하에 제거할 수 있으며, 또한 포토레지스트 제거공정 중의 하부의 금속배선의 부식을 최소화할 수 있다.
포토레지스트 박리액 조성물, 암모늄 염

58. 发明授权

KR101167240B1 레지스트 제거용 조성물 有权
公开(公告)号：KR101167240B1
公开(公告)日：2012-07-23
申请号：KR1020050038213
申请日：2005-05-07
申请人： 주식회사 동진쎄미켐
发明人： 윤석일 , 김성배 , 정종현 , 박희진 , 장석창 , 신성건 , 김위용 , 허순범 , 김병욱
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , G03F7/426
摘要： 본 발명은 전자회로 또는 표시소자를 패턴하는 레지스트(resist) 제거용 조성물에 관한 것으로, 보다 상세하게는 아민, 용제 및 부식방지제를 포함하며, 상기 부식방지제가 트리아졸류 화합물, 머캅토류 화합물, 하이드록실기를 갖는 벤젠류 화합물 및 이들의 혼합물로 이루어진 군으로부터 선택된 1종 이상임을 특징으로 하는 레지스트 제거용 조성물을 제공한다.
본 발명의 레지스트 제거용 조성물은 레지스트 제거력이 매우 우수하고, 패턴된 금속배선의 부식을 최소화 할 수 있는 장점이 있다.
레지스트 제거용 조성물, 부식방지제

59. 发明公开

KR1020100004376A 금속 나노 입자의 제조방법 有权
标题翻译：纳米尺寸金属颗粒的制备方法
公开(公告)号：KR1020100004376A
公开(公告)日：2010-01-13
申请号：KR1020080064504
申请日：2008-07-03
申请人： 주식회사 동진쎄미켐
发明人： 김병욱 , 김성배 , 이성현 , 유현석
IPC分类号： B82B3/00
CPC分类号： B22F9/24 , B22F2301/10 , B22F2304/054 , B82Y30/00 , B82Y40/00
摘要： PURPOSE: A method for producing metal nanoparticle is provided to reduce production process from two steps to one step without washing process. CONSTITUTION: A method for producing metal nanoparticle comprises: a first step of dissolving metal precursor in a solvent containing glycol solvent; a second step of adding organic amine to the mixture solution and stirring until the solution color does not change; and a third step of adding a compound selected from hydrazine derivative, sodium hypophosphate, hydroxylamine, and sodium borohydride.
摘要翻译：目的：提供一种生产金属纳米粒子的方法，可将生产过程从两步骤降至一步，无需洗涤。构成：金属纳米颗粒的制造方法包括：将金属前体溶解在含有二醇溶剂的溶剂中的第一工序; 向混合溶液中加入有机胺并搅拌直到溶液颜色不变的第二步; 以及添加选自肼衍生物，次磷酸钠，羟胺和硼氢化钠的化合物的第三步骤。

60. 发明公开

KR1020090059752A 마그네슘 및 마그네슘 합금의 표면처리방법 无效
标题翻译： MG和MG合金的表面处理方法
公开(公告)号：KR1020090059752A
公开(公告)日：2009-06-11
申请号：KR1020070126782
申请日：2007-12-07
申请人： 주식회사 동진쎄미켐
发明人： 김병욱 , 김성배 , 이성현 , 허현
IPC分类号： C23C20/00 , C23C22/00
CPC分类号： C23F1/22 , G03F7/423
摘要： A surface processing method of magnesium and magnesium alloy is provided to prevent the harmfulness by excluding the heavy metal in the surface processing and to reduce the processing time. A surface processing method of magnesium and magnesium alloy comprises a step of contacting the surface treating agent to the surface of the magnesium and the magnesium alloy. The surface treating agent contains dicarboxylic acid 0.5~25 wt.%, inorganic acid 0.1~10 wt.%, peroxide 0.1~10 wt.% and residual water.
摘要翻译：提供镁和镁合金的表面处理方法，以通过排除表面处理中的重金属来防止有害性并且缩短处理时间。镁和镁合金的表面处理方法包括使表面处理剂与镁和镁合金的表面接触的步骤。表面处理剂含有0.5〜25重量％的二羧酸，0.1〜10重量％的无机酸，0.1〜10重量％的过氧化物和残留的水。

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