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51. 发明授权

US09293694B2 Magnetoresistive random access memory cell with independently operating read and write components 有权
公开(公告)号：US09293694B2
公开(公告)日：2016-03-22
申请号：US13288860
申请日：2011-11-03
申请人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
IPC分类号： G11C11/00 , H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.

52. 发明授权

US09012265B2 Magnet assisted alignment method for wafer bonding and wafer level chip scale packaging 有权
标题翻译：用于晶片接合和晶圆级芯片级封装的磁铁辅助对准方法
公开(公告)号：US09012265B2
公开(公告)日：2015-04-21
申请号：US13429440
申请日：2012-03-26
申请人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
发明人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
IPC分类号： H01L21/68 , H01L23/00
CPC分类号： H01L24/83 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/80 , H01L24/81 , H01L24/94 , H01L24/97 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03612 , H01L2224/03614 , H01L2224/0362 , H01L2224/03826 , H01L2224/03827 , H01L2224/0401 , H01L2224/05009 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05547 , H01L2224/05576 , H01L2224/05578 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/08146 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1162 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/80121 , H01L2224/80143 , H01L2224/80169 , H01L2224/80801 , H01L2224/81121 , H01L2224/81143 , H01L2224/81169 , H01L2224/81801 , H01L2224/94 , H01L2224/97 , H01L2924/01322 , H01L2924/1461 , H01L2924/00015 , H01L2924/00014 , H01L2924/014 , H01L2924/01026 , H01L2924/01028 , H01L2924/01078 , H01L2924/01024 , H01L2224/80 , H01L2224/81 , H01L2224/03 , H01L2224/11 , H01L2924/00
摘要： A high-precision alignment method with high throughput is proposed, which can be used for wafer-to-wafer, chip-to-wafer or chip-to-chip bonding. The scheme implements pairing patterned magnets predetermined designed and made using wafer level process on two components (wafer or chip). The magnetization in patterned magnet can be set at predetermined configuration before bonding starts. When, the two components are bought to close proximity after a coarse alignment, the magnetic force will bring the magnet pairs together and aligned the patterned magnet on one component with its mirrored or complimentary patterned magnets on the other component to minimize the overall the magnetic energy of the pairing magnet. A few patterned magnet structures and materials, with their unique merits are proposed as examples for magnet pair for the self-alignment purpose. This method enables solid contact at the bonding interface via patterned magnets under the magnetic force, which avoid the wafer drafting due to the formation of the liquid phases.
摘要翻译：提出了一种高精度的高通量对准方法，可用于晶圆到晶圆，晶片到晶圆或芯片间的接合。该方案实现了使用晶片级处理在两个部件（晶片或芯片）上预先设计和制造的配对图案化磁体。在接合开始之前，图案化磁体中的磁化可以被设定为预定的配置。当两个部件在粗对准之后被购买成靠近时，磁力将使磁体对在一起，并将其上的图案化磁体与其另一部件上的镜像或互补的图案化磁体对准，以最小化整个磁能的配对磁铁。提出了一些具有独特优点的图案化磁体结构和材料作为用于自对准目的的磁体对的示例。该方法能够在磁力下通过图案化的磁体在接合界面处实现牢固的接触，从而避免由于液相的形成引起的晶片牵伸。

53. 发明授权

US08797686B1 Magnetic recording transducer with short effective throat height and method of fabrication 有权
标题翻译：磁记录传感器具有短的喉部高度和制造方法
公开(公告)号：US08797686B1
公开(公告)日：2014-08-05
申请号：US12978242
申请日：2010-12-23
申请人： Zhigang Bai , Peng Luo , Shaoping Li , Ut Tran
发明人： Zhigang Bai , Peng Luo , Shaoping Li , Ut Tran
IPC分类号： G11B5/31 , G11B5/23
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/232 , G11B5/235 , G11B5/3116 , G11B5/315
摘要： A magnetic recording transducer for use in a data storage device includes a writer pole with a ABS surface, trailing edge bevel and a trailing shield. The effective throat height of the writer main pole is reduced by the use two gap layers between the writer main pole and the trailing shield. A first gap layer is on and in contact with the writer pole trailing surface, and a second gap layer is on a section of the first gap layer on the writer pole trailing edge bevel, from a point removed from the ABS surface and absent from a part on a section of the first gap layer on the writer pole trailing edge bevel nearest the ABS. A method of fabricating the transducer is also provided.
摘要翻译：用于数据存储装置的磁记录传感器包括具有ABS表面的写入极，后缘斜面和后屏蔽。通过使用写主机和后盾之间的两个间隙层，减小了作者主极的有效喉部高度。第一间隙层与写入器极后表面接触并接触，并且第二间隙层位于写入器极后缘斜面上的第一间隙层的一部分上，从从ABS表面移除的点不在部分位于最靠近ABS的作者极后缘的第一间隙层的一部分。还提供了制造换能器的方法。

54. 发明授权

US08599520B1 Method and system for providing a read transducer having an adaptive read sensor track width 有权
标题翻译：用于提供具有自适应读取传感器轨道宽度的读取换能器的方法和系统
公开(公告)号：US08599520B1
公开(公告)日：2013-12-03
申请号：US13332275
申请日：2011-12-20
申请人： Feng Liu , Laurence L. Chen , Yimin Guo , Amritpal S. Rana , Shaoping Li
发明人： Feng Liu , Laurence L. Chen , Yimin Guo , Amritpal S. Rana , Shaoping Li
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G11B5/398 , G01R33/09 , G01R33/093 , G11B5/3912 , G11B5/3932
摘要： A method and system provide a magnetic read transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a second shield, and a read sensor between the first shield and the second shield. The read sensor extends along a stripe height direction perpendicular to the ABS. A first portion of the read sensor at the ABS has a first width in a track width direction parallel to the ABS. A second portion of the read sensor is recessed from the ABS along the stripe height direction and has a second width in the track width direction. The second width is greater than the first width.
摘要翻译：一种方法和系统提供具有空气轴承表面（ABS）的磁读取换能器。磁换能器包括在第一屏蔽和第二屏蔽之间的第一屏蔽，第二屏蔽和读取传感器。读取传感器沿垂直于ABS的条带高度方向延伸。 ABS处的读取传感器的第一部分具有平行于ABS的轨道宽度方向上的第一宽度。读取传感器的第二部分沿着条带高度方向从ABS凹入，并且在轨道宽度方向上具有第二宽度。第二宽度大于第一宽度。

55. 发明授权

US08451563B1 Method for providing a side shield for a magnetic recording transducer using an air bridge 有权
标题翻译：用于使用空气桥提供用于磁记录换能器的侧屏蔽的方法
公开(公告)号：US08451563B1
公开(公告)日：2013-05-28
申请号：US13331208
申请日：2011-12-20
申请人： Jinqiu Zhang , Feng Liu , Shaoping Li , Ming Sun
发明人： Jinqiu Zhang , Feng Liu , Shaoping Li , Ming Sun
IPC分类号： G11B5/17 , G11B5/127
CPC分类号： G11B5/112 , G11B5/1278 , G11B5/3116 , G11B5/315 , G11B5/3163 , Y10T29/49044
摘要： A method fabricates a side shield for a magnetic transducer having a nonmagnetic layer and an ABS location corresponding to an ABS. The nonmagnetic layer has a pole trench therein. The pole trench has a shape and location corresponding to the pole. A wet etchable layer is deposited. Part of the wet etchable layer resides in the pole trench. A pole is formed. The pole has a bottom and a top wider than the bottom in the pole tip region. Part of the pole in the pole tip region is in the pole trench on at least part of the wet etchable layer. At least parts of the wet etchable layer and the nonmagnetic layer are removed, forming an air bridge. The air bridge is between part of the pole at the ABS location and an underlying layer. Side shield layer(s) that substantially fill the air bridge are deposited.
摘要翻译：一种制造用于具有对应于ABS的非磁性层和ABS位置的磁换能器的侧屏蔽的方法。非磁性层在其中具有极沟槽。极沟具有对应于极的形状和位置。沉积湿蚀刻层。湿蚀刻层的一部分位于极沟槽中。一个极点形成。电极具有底部和顶部宽于电极尖端区域中的底部。极尖区域中的极的一部分在至少部分湿蚀刻层的极沟中。去除湿蚀刻层和非磁性层的至少一部分，形成空气桥。空气桥在ABS位置的极点的一部分和下层之间。基本上填充空气桥的侧面屏蔽层被沉积。

56. 发明授权

US08000128B2 Structures for resistive random access memory cells 有权
标题翻译：电阻随机存取存储单元的结构
公开(公告)号：US08000128B2
公开(公告)日：2011-08-16
申请号：US12835791
申请日：2010-07-14
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

57. 发明授权

US07846564B2 Perpendicular magnetic recording media with magnetic anisotropy/coercivity gradient and local exchange coupling 有权
标题翻译：具有磁各向异性/矫顽力梯度和局部交换耦合的垂直磁记录介质
公开(公告)号：US07846564B2
公开(公告)日：2010-12-07
申请号：US11235208
申请日：2005-09-27
申请人： Shaoping Li , Kaizhong Gao , Lei Wang , Wenzhong Zhu , Xiaobin Wang
发明人： Shaoping Li , Kaizhong Gao , Lei Wang , Wenzhong Zhu , Xiaobin Wang
IPC分类号： G11B5/65
CPC分类号： G11B5/667 , B82Y10/00 , G11B5/64 , G11B5/65 , G11B5/656 , G11B5/66 , G11B5/743 , G11B5/746 , G11B5/82 , G11B2005/0029 , H01F41/0206 , Y10S428/90 , Y10T29/4902 , Y10T29/49032 , Y10T29/49067 , Y10T428/12458 , Y10T428/12465 , Y10T428/12931 , Y10T428/26 , Y10T428/265
摘要： A perpendicular magnetic recording medium adapted for high recording density and high data recording rate comprises a non-magnetic substrate having at least one surface with a layer stack formed thereon, the layer stack including a perpendicular recording layer containing a plurality of columnar-shaped magnetic grains extending perpendicularly to the substrate surface for a length, with a first end distal the surface and a second end proximal the surface, wherein each of the magnetic grains has: (1) a gradient of perpendicular magnetic anisotropy field Hk extending along its length between the first end and second ends; and (2) predetermined local exchange coupling strengths along the length.
摘要翻译：适用于高记录密度和高数据记录速率的垂直磁记录介质包括具有至少一个具有在其上形成层叠层的表面的非磁性基板，该层堆叠包括垂直记录层，该垂直记录层包含多个柱状磁性颗粒垂直于衬底表面延伸一段长度，第一端远离表面，接近表面的第二端，其中每个磁性颗粒具有：（1）垂直磁各向异性场Hk沿其长度延伸的梯度第一端和第二端; 和（2）沿着长度的预定局部交换耦合强度。

58. 发明申请

US20100110758A1 STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS 有权
公开(公告)号：US20100110758A1
公开(公告)日：2010-05-06
申请号：US12262262
申请日：2008-10-31
申请人： Shaoping Li , Inisk Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Inisk Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00 , H01L47/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

59. 发明申请

US20090262636A1 WIRE-ASSISTED MAGNETIC WRITE DEVICE INCLUDING MULTIPLE WIRE ASSIST CONDUCTORS 审中-公开
标题翻译：包括多根线辅助导线器的辅助磁铁写入装置
公开(公告)号：US20090262636A1
公开(公告)日：2009-10-22
申请号：US12105627
申请日：2008-04-18
申请人： Jianhua Xue , Yuming Zhou , Shaoping Li , Johannes van Ek , Christopher Rea
发明人： Jianhua Xue , Yuming Zhou , Shaoping Li , Johannes van Ek , Christopher Rea
IPC分类号： G11B9/00
CPC分类号： G11B5/314 , G11B2005/001
摘要： A magnetic device includes a write element including a write element tip, and a conductive coil for carrying a write current to induce a first field in the write element. A first conductor proximate a trailing edge of the write pole tip is operable to carry a first assist current to generate a second field that augments the first field. A second conductor proximate a leading edge of the write pole tip is operable to carry a second assist current to generate a third field that augments the first field. First and second side shields are on opposing sides of the write element in a cross-track direction.
摘要翻译：磁性装置包括写入元件，该写入元件包括写入元件尖端，以及用于承载写入电流以引起写入元件中的第一场的导电线圈。靠近写极尖的后缘的第一导体可操作以承载第一辅助电流以产生增大第一场的第二场。靠近写极尖的前沿的第二导体可操作以承载第二辅助电流以产生增大第一场的第三场。第一和第二侧面屏蔽件在横向方向上位于写入元件的相对侧上。

60. 发明申请

US20090185315A1 MAGNETIC SENSOR INCLUDING A FREE LAYER HAVING PERPENDICULAR TO THE PLANE ANISOTROPY 有权
标题翻译：磁性传感器，包括一个具有平板电脑平台的自由层
公开(公告)号：US20090185315A1
公开(公告)日：2009-07-23
申请号：US12017822
申请日：2008-01-22
申请人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
发明人： Song S. Xue , Zheng Gao , Shaoping Li , Kaizhong Gao , Dimitar V. Dimitrov , Konstantin Nikolaev , Patrick J. Ryan
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of each layer of the free layer assembly. A spacer layer is between the reference layer and the free layer, and a signal enhancement layer is exchange coupled to the free layer assembly on a side opposite the spacer layer.
摘要翻译：磁传感器包括具有第一磁化方向的参考层和具有基本上垂直于第一磁化方向并且基本上垂直于自由层组件的每个层的平面的有效磁化方向的自由层组件。间隔层位于参考层和自由层之间，信号增强层与隔离层相对的一侧交换耦合到自由层组件。

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