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1. 发明申请

US20120119861A1 Permanent Magnets Array for Planar Magnetron 审中-公开
标题翻译：平面磁控管永磁体阵列
公开(公告)号：US20120119861A1
公开(公告)日：2012-05-17
申请号：US12946858
申请日：2010-11-16
申请人： Yunjun Tang , Yicheng Sun
发明人： Yunjun Tang , Yicheng Sun
IPC分类号： H01F7/02
CPC分类号： H01F7/0278 , H01J37/3452
摘要： Permanent magnets array for use in a planar magnetron in which magnets in a magnet-segment is arranged in a Halbach array with their magnetization directions alternating in directions perpendicular with each other. The magnet-segments are closely packed to form different shapes, such as heart, square, circular . . . , in a Halbach Array style, which leads to minimum magnetic flux loss. Such arrangement of permanent magnets will also reinforce the magnetic field on one side of the array while cancel the field to near zero on the other side. The reinforced field strength is twice as large on the side on which the flux is confined. The permanent magnets arrangement and the resulting stationary and/or rotating planar magnetron, provides the high magnetic flux density and uniform flux distribution need to penetrate thick sputtering target, and increased not only the target usage, but also the usable the target life time.
摘要翻译：用于平面磁控管的永磁体阵列，其中磁体段中的磁体以Halbach阵列排列，其磁化方向在彼此垂直的方向上交替。磁体片段紧密包装形成不同的形状，如心脏，方形，圆形。。。，以Halbach阵列风格，导致最小的磁通损耗。这种永磁体的布置也将加强阵列一侧的磁场，同时在另一侧将场减小到接近零。加强磁场强度是限制焊剂一侧的两倍。永久磁铁布置和所得到的固定和/或旋转的平面磁控管提供了高磁通密度和均匀的通量分布，需要穿透厚的溅射靶，并且不仅增加目标使用量，而且增加了目标使用寿命。

2. 发明申请

US20210057242A1 Chip Front Surface Touchless Pick and Place Tool or Flip Chip Bonder 有权
公开(公告)号：US20210057242A1
公开(公告)日：2021-02-25
申请号：US16550109
申请日：2019-08-23
申请人： Yunjun Tang , Zongrong Liu , Ge Yi
发明人： Yunjun Tang , Zongrong Liu , Ge Yi
IPC分类号： H01L21/67 , H01L23/00 , H01L21/683
摘要： A piece of pick and place tool or a chip bonding equipment, which has innovative designs enabling chip(s) on a tape to get picked up without touching its front surface, is invented. The designs use levitation technologies to receive and hold the chips detached from the tape from a face-down position. A streamline design is also invented to provide better productivity. The invented pick and place tool or chip bonder is particularly useful for applications which require using chips with zero tolerance of particle and/or contamination on the chip front surfaces.

3. 发明授权

US09018100B2 Damascene process using PVD sputter carbon film as CMP stop layer for forming a magnetic recording head 有权
标题翻译：使用PVD溅射碳膜作为形成磁记录头的CMP停止层的镶嵌工艺
公开(公告)号：US09018100B2
公开(公告)日：2015-04-28
申请号：US12943835
申请日：2010-11-10
申请人： Yanfeng Chen , Yunjun Tang , Yana Qian , Ming M. Yang , Yunfei Li , Paul E. Anderson
发明人： Yanfeng Chen , Yunjun Tang , Yana Qian , Ming M. Yang , Yunfei Li , Paul E. Anderson
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311 , B44C1/22 , B23P15/00 , C03C25/00 , G11B5/31
CPC分类号： G11B5/3116 , G11B5/3163
摘要： Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.
摘要翻译：提供使用物理气相沉积（PVD）溅射碳膜作为用于形成磁记录头的化学机械平面化（CMP）停止层的镶嵌工艺。在一个实施例中，一种这样的方法包括提供绝缘体，去除绝缘体的一部分以在绝缘体内形成沟槽，使用物理气相沉积工艺在绝缘体的第一部分上沉积碳材料，将至少一种铁磁材料放置在所述绝缘体的第二部分形成包括所述沟槽内的所述铁磁材料的一部分的极，以及使用所述碳材料的至少一部分作为所述化学机械平面化的停止层，对所述至少一种铁磁材料进行化学机械平坦化。

4. 发明申请

US20120312233A1 Magnetically Enhanced Thin Film Coating Method and Apparatus 审中-公开
标题翻译：磁增强薄膜涂布方法和装置
公开(公告)号：US20120312233A1
公开(公告)日：2012-12-13
申请号：US13157312
申请日：2011-06-10
申请人： Ge Yi , Yunjun Tang
发明人： Ge Yi , Yunjun Tang
IPC分类号： C23C16/503 , C23C16/507
CPC分类号： H01J37/32669 , C23C16/045 , C23C16/515 , H01J37/32394
摘要： Methods and apparatuses for implementing magnetic field to assist PECVD to locally or globally coat the internal surface of the work piece are presented. Several permanent magnet assembly designs have been presented to provide efficient and effective magnetic field inside the work piece, which acts partially as the working chamber. The magnet assembly generates magnetic flux inside the working chamber, which increases the efficiency of PECVD process, enable PECVD process under higher gas pressure and to improve the uniformity, deposition rate, better adhesion and reduce the process temperature.
摘要翻译：提出了用于实现磁场以帮助PECVD局部或全局地涂覆工件的内表面的方法和装置。已经提出了几种永久磁铁组件设计，以在工件内部提供有效和有效的磁场，其部分地作为工作室起作用。磁体组件在工作室内产生磁通，提高了PECVD工艺的效率，使PECVD工艺在更高的气体压力下能够提高均匀性，沉积速率，更好的附着力和降低工艺温度。

5. 发明申请

US20130307097A1 Magnetoresistive random access memory cell design 审中-公开
标题翻译：磁阻随机存取存储单元设计
公开(公告)号：US20130307097A1
公开(公告)日：2013-11-21
申请号：US13472085
申请日：2012-05-15
申请人： Ge Yi , Shaoping Li , Yunjun Tang , Zongrong Liu , Dujiang Wan
发明人： Ge Yi , Shaoping Li , Yunjun Tang , Zongrong Liu , Dujiang Wan
IPC分类号： H01L29/82
CPC分类号： H01L43/08
摘要： A magnetic memory cell comprises in-plane anisotropy tunneling magnetic junction (TMJ) and two fixed in-plane storage-stabilized layers, which splits on the both side of the data storage layer of the TMJ. The magnetizations of the said fixed in-plane storage-stabilized layers are all normal to that of the reference layer of TMJ but point to opposite direction. The existing of the storage-stabilized layers not only enhances the stability of the data storage, but also can reduce the critical current needed to flip the data storage layer via some specially added features.
摘要翻译：磁存储单元包括面内各向异性隧道磁结（TMJ）和两个固定的面内存储稳定层，其分散在TMJ的数据存储层的两侧。所述固定的面内储存稳定层的磁化与TMJ的参考层的磁化正好相反，但指向相反的方向。现有的存储稳定层不仅增强了数据存储的稳定性，而且还可以通过一些特别添加的功能来减少翻转数据存储层所需的临界电流。

6. 发明申请

US20130270661A1 Magnetoresistive random access memory cell design 审中-公开
标题翻译：磁阻随机存取存储单元设计
公开(公告)号：US20130270661A1
公开(公告)日：2013-10-17
申请号：US13448133
申请日：2012-04-16
申请人： Ge Yi , Shaoping Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Yunjun Tang , Zongrong Liu
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161
摘要： A new magnetic memory cell comprises a perpendicular-anisotropy tunneling magnetic junction (TMJ) and a fixed in-plane spin-polarizing layer, which is separated from the perpendicular-anisotropy data storage layer of tunneling magnetic junction by a non-magnetic layer. The non-magnetic layer can be made of metallic or dielectric materials.
摘要翻译：新的磁存储单元包括垂直各向异性隧道磁结（TMJ）和固定的面内自旋偏振层，其通过非磁性层与隧道磁结的垂直各向异性数据存储层分离。非磁性层可以由金属或介电材料制成。

7. 发明申请

US20130252375A1 Magnet Assisted Alignment Method for Wafer Bonding and Wafer Level Chip Scale Packaging 审中-公开
标题翻译：用于晶圆接合和晶圆级芯片级封装的磁辅助对准方法
公开(公告)号：US20130252375A1
公开(公告)日：2013-09-26
申请号：US13429440
申请日：2012-03-26
申请人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
发明人： Ge Yi , Zongrong Liu , Yunjun Tang , Shaoping Li
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/80 , H01L24/81 , H01L24/94 , H01L24/97 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/03612 , H01L2224/03614 , H01L2224/0362 , H01L2224/03826 , H01L2224/03827 , H01L2224/0401 , H01L2224/05009 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05084 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05547 , H01L2224/05576 , H01L2224/05578 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05657 , H01L2224/08146 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/1162 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/16146 , H01L2224/80121 , H01L2224/80143 , H01L2224/80169 , H01L2224/80801 , H01L2224/81121 , H01L2224/81143 , H01L2224/81169 , H01L2224/81801 , H01L2224/94 , H01L2224/97 , H01L2924/01322 , H01L2924/1461 , H01L2924/00015 , H01L2924/00014 , H01L2924/014 , H01L2924/01026 , H01L2924/01028 , H01L2924/01078 , H01L2924/01024 , H01L2224/80 , H01L2224/81 , H01L2224/03 , H01L2224/11 , H01L2924/00
摘要： A high-precision alignment method with high throughput is proposed, which can be used for wafer-to-wafer, chip-to-wafer or chip-to-chip bonding. The scheme implements pairing patterned magnets predetermined designed and made using wafer level process on two components (wafer or chip). The magnetization in patterned magnet can be set at predetermined configuration before bonding starts. When, the two components are bought to close proximity after a coarse alignment, the magnetic force will bring the magnet pairs together and aligned the patterned magnet on one component with its mirrored or complimentary patterned magnets on the other component to minimize the overall the magnetic energy of the pairing magnet. A few patterned magnet structures and materials, with their unique merits are proposed as examples for magnet pair for the self-alignment purpose. This method enables solid contact at the bonding interface via patterned magnets under the magnetic force, which avoid the wafer drafting due to the formation of the liquid phases.
摘要翻译：提出了一种高精度的高通量对准方法，可用于晶圆到晶圆，晶片到晶圆或芯片间的接合。该方案实现了使用晶片级处理在两个部件（晶片或芯片）上预先设计和制造的配对图案化磁体。在接合开始之前，图案化磁体中的磁化可以被设定为预定的配置。当两个部件在粗对准之后被购买成靠近时，磁力将使磁体对在一起，并将其上的图案化磁体与其另一部件上的镜像或互补的图案化磁体对准，以最小化整个磁能的配对磁铁。提出了一些具有独特优点的图案化磁体结构和材料作为用于自对准目的的磁体对的示例。该方法能够在磁力下通过图案化的磁体在接合界面处实现牢固的接触，从而避免由于液相的形成引起的晶片牵伸。

8. 发明申请

US20130114334A1 Magnetoresistive random access memory cell with independently operating read and write components 审中-公开
标题翻译：具有独立操作的读写组件的磁阻随机存取存储单元
公开(公告)号：US20130114334A1
公开(公告)日：2013-05-09
申请号：US13288860
申请日：2011-11-03
申请人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
发明人： Ge Yi , Shaoping Li , Dong Li , Yunjun Tang , Zongrong Liu
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675
摘要： A new class of the memory cell is proposed. There are two separated pulse data writing and sensing current paths. The in-plane pulse current is used to flip the magnetization direction of the perpendicular-anisotropy data storage layer sandwiched between a heavy metal writing current-carrying layer and a dielectric layer. The magnetization state within data storage layer is detected by the patterned perpendicular-anisotropy tunneling magnetoresistive (TMR) stack via the output potential of the stack. Two detailed memory cells are proposed: in one proposed cell, the data storage layer is independent from but kept close to the sensing TMR stack, whose magnetization orientation affects magnetization configuration within the free layer of the TMR stack, therefor ultimately affects the output potential of the stack; in the other proposed cell, the perpendicular-anisotropy data storage layer is the free layer of the sensing TMR stack, whose magnetization state will directly affect the output potential of the stack when sensing current passes through.
摘要翻译：提出了一类新的存储单元。有两个分离的脉冲数据写入和感测电流路径。面内脉冲电流用于翻转夹在重金属写入载流层和电介质层之间的垂直各向异性数据存储层的磁化方向。数据存储层内的磁化状态通过图案化的垂直各向异性隧道磁阻（TMR）堆叠通过堆叠的输出电位来检测。提出了两个详细的存储单元：在一个提出的单元中，数据存储层独立于但保持靠近感测TMR堆栈，其磁化方向影响TMR堆栈自由层内的磁化配置，从而最终影响堆栈在另一个提出的单元中，垂直各向异性数据存储层是感测TMR堆栈的自由层，当感测电流通过时，其磁化状态将直接影响堆叠的输出电位。

9. 发明授权

US08320077B1 Method and system for providing a high moment film 有权
标题翻译：提供高力矩胶片的方法和系统
公开(公告)号：US08320077B1
公开(公告)日：2012-11-27
申请号：US12334753
申请日：2008-12-15
申请人： Yunjun Tang , Yun-Fei Li , Yingjian Chen
发明人： Yunjun Tang , Yun-Fei Li , Yingjian Chen
IPC分类号： G11B5/127 , G11B5/147 , G11B5/31
CPC分类号： G11B5/147 , G11B5/1278 , G11B5/3113 , G11B5/3116 , G11B5/3146
摘要： A method and system for providing a high moment film are disclosed. The high moment film might be used in structures, such as a pole, of a magnetic transducer. The method and system includes providing a plurality of high moment layers and at least one soft magnetic layer interleaved with and ferromagnetically coupled with the plurality of high moment layers. Each of the plurality of high moment layers has a magnetic moment of greater than 2.4 Tesla. The at least one soft magnetic layer has a hard axis coercivity of not more than twenty Oersted. The high moment film has a total thickness of at least one thousand Angstroms.
摘要翻译：公开了一种用于提供高力矩薄膜的方法和系统。高力矩胶片可用于磁性传感器的结构，如磁极。该方法和系统包括提供多个高力矩层和至少一个与多个高力矩层交织并且与磁化耦合的软磁层。多个高力矩层中的每一个具有大于2.4特斯拉的磁矩。所述至少一个软磁性层具有不超过二十奥斯特的硬轴矫顽力。高力矩薄膜的总厚度至少为一千埃。

10. 发明授权

US07672080B1 Laminated perpendicular writer head including amorphous metal 有权
标题翻译：包括非晶金属的层压垂直写入头
公开(公告)号：US07672080B1
公开(公告)日：2010-03-02
申请号：US11521949
申请日：2006-09-15
申请人： YunJun Tang , Kyusik Sin , Yingjian Chen
发明人： YunJun Tang , Kyusik Sin , Yingjian Chen
IPC分类号： G11B5/147
CPC分类号： G11B5/3163 , G11B5/1278 , G11B5/147 , G11B5/1877 , G11B5/3116 , G11B5/3133
摘要： A writer pole for perpendicular recording and a method of manufacturing the same are provided. The writer pole comprises a laminated structure of a first magnetic layer, a second magnetic layer, and a non-magnetic amorphous metal spacer layer disposed between the first and second magnetic layers. Additional ferromagnetic and non-magnetic layers can be added, in an alternating fashion, to produce other laminated structures. Forming a perpendicular writer element includes forming a first magnetic layer, forming a spacer layer on the first magnetic layer, and forming a second magnetic layer on the spacer layer. Forming the perpendicular writer element can further include trimming the writer pole.
摘要翻译：提供了用于垂直记录的写入极和其制造方法。写入极包括设置在第一和第二磁性层之间的第一磁性层，第二磁性层和非磁性非晶金属间隔层的叠层结构。可以以交替的方式添加额外的铁磁和非磁性层以产生其它层压结构。形成垂直写入器元件包括形成第一磁性层，在第一磁性层上形成间隔层，以及在间隔层上形成第二磁性层。形成垂直写入器元件还可以包括修整写入器极。

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