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1. 发明授权

US08599520B1 Method and system for providing a read transducer having an adaptive read sensor track width 有权
标题翻译：用于提供具有自适应读取传感器轨道宽度的读取换能器的方法和系统
公开(公告)号：US08599520B1
公开(公告)日：2013-12-03
申请号：US13332275
申请日：2011-12-20
申请人： Feng Liu , Laurence L. Chen , Yimin Guo , Amritpal S. Rana , Shaoping Li
发明人： Feng Liu , Laurence L. Chen , Yimin Guo , Amritpal S. Rana , Shaoping Li
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G11B5/398 , G01R33/09 , G01R33/093 , G11B5/3912 , G11B5/3932
摘要： A method and system provide a magnetic read transducer having an air-bearing surface (ABS). The magnetic transducer includes a first shield, a second shield, and a read sensor between the first shield and the second shield. The read sensor extends along a stripe height direction perpendicular to the ABS. A first portion of the read sensor at the ABS has a first width in a track width direction parallel to the ABS. A second portion of the read sensor is recessed from the ABS along the stripe height direction and has a second width in the track width direction. The second width is greater than the first width.
摘要翻译：一种方法和系统提供具有空气轴承表面（ABS）的磁读取换能器。磁换能器包括在第一屏蔽和第二屏蔽之间的第一屏蔽，第二屏蔽和读取传感器。读取传感器沿垂直于ABS的条带高度方向延伸。 ABS处的读取传感器的第一部分具有平行于ABS的轨道宽度方向上的第一宽度。读取传感器的第二部分沿着条带高度方向从ABS凹入，并且在轨道宽度方向上具有第二宽度。第二宽度大于第一宽度。

2. 发明授权

US08194366B1 TMR read head structures with differential stripe heights 有权
标题翻译： TMR读取具有差分条纹高度的头结构
公开(公告)号：US08194366B1
公开(公告)日：2012-06-05
申请号：US12579315
申请日：2009-10-14
申请人： Shaoping Li , Yimin Guo , Feng Liu , Wei Zhang , Sining Mao
发明人： Shaoping Li , Yimin Guo , Feng Liu , Wei Zhang , Sining Mao
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , G01R33/098 , G11B5/3909 , H01L43/08 , H01L43/12
摘要： A tunneling magnetoresistance (TMR) read head and a method of producing the same are disclosed. A free layer having a free layer stripe height is provided, the free layer having a first side and a second side. A tunneling barrier layer is formed adjacent to the first side of the free layer, the tunneling barrier layer having a first side and a second side, the second side of the tunneling barrier layer facing the first side of the free layer. A pinned stack is formed adjacent to the first side of the tunneling barrier layer. The pinned stack comprises at least one magnetic layer having a current path stripe height that is less than the free layer stripe height.
摘要翻译：公开了一种隧道磁阻（TMR）读头及其制造方法。提供具有自由层条纹高度的自由层，自由层具有第一侧和第二侧。隧道势垒层邻近自由层的第一侧形成，隧道势垒层具有第一侧和第二侧，隧道势垒层的第二面面向自由层的第一侧。在隧道势垒层的第一侧附近形成钉扎层。钉扎堆叠包括至少一个具有小于自由层条纹高度的电流路径条纹高度的磁性层。

3. 发明授权

US08514506B1 Disk drive comprising a dual read element and delay circuitry to improve read signal 有权
标题翻译：磁盘驱动器包括双重读取元件和延迟电路，以改善读取信号
公开(公告)号：US08514506B1
公开(公告)日：2013-08-20
申请号：US13371252
申请日：2012-02-10
申请人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
发明人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
IPC分类号： G11B5/09 , G11B20/10
CPC分类号： G11B5/3954 , G11B5/012 , G11B20/10009 , G11B20/10037 , G11B20/10046 , G11B20/10074 , G11B20/10175 , G11B20/10222 , G11B20/10231 , G11B20/10277 , G11B20/10305 , G11B20/10314 , G11B20/10379 , G11B20/1258 , G11B2220/2516
摘要： A disk drive is disclosed comprising a disk having a plurality of data tracks, and a head actuated over the disk, the head comprising a first read element and a second read element. A data track is read to generate a first read signal emanating from the first read element and a second read signal emanating from the second read element. The first read signal is delayed in continuous time relative to the second read signal to generate a delayed read signal, and the second read signal is combined with the delayed read signal to generate a combined read signal. An estimated data sequence is detected from the combined read signal.
摘要翻译：公开了一种磁盘驱动器，其包括具有多个数据磁道的磁盘，以及在盘上驱动的磁头，磁头包括第一读取元件和第二读取元件。读取数据磁道以产生从第一读取元件发出的第一读取信号和从第二读取元件发出的第二读取信号。第一读取信号相对于第二读取信号以连续时间延迟，以产生延迟的读取信号，并且将第二读取信号与延迟的读取信号组合以产生组合的读取信号。从组合的读取信号中检测估计的数据序列。

4. 发明授权

US08139301B1 Disk drive comprising a dual read element and delay circuitry to improve read signal 有权
标题翻译：磁盘驱动器包括双重读取元件和延迟电路，以改善读取信号
公开(公告)号：US08139301B1
公开(公告)日：2012-03-20
申请号：US12507294
申请日：2009-07-22
申请人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
发明人： Shaoping Li , Yimin Guo , Francis H. Liu , Sining Mao
IPC分类号： G11B5/09 , G11B20/10
CPC分类号： G11B5/3954 , G11B5/012 , G11B20/10009 , G11B20/10037 , G11B20/10046 , G11B20/10074 , G11B20/10175 , G11B20/10222 , G11B20/10231 , G11B20/10277 , G11B20/10305 , G11B20/10314 , G11B20/10379 , G11B20/1258 , G11B2220/2516
摘要： A disk drive is disclosed comprising a disk having a plurality of data tracks, and a head actuated over the disk, the head comprising a first read element and a second read element. A data track is read to generate a first read signal emanating from the first read element and a second read signal emanating from the second read element. The first read signal is delayed relative to the second read signal to generate a delayed read signal, and the second read signal is combined with the delayed read signal to generate a combined read signal. An estimated data sequence is detected from the combined read signal.
摘要翻译：公开了一种磁盘驱动器，其包括具有多个数据磁道的磁盘，以及在盘上驱动的磁头，磁头包括第一读取元件和第二读取元件。读取数据磁道以产生从第一读取元件发出的第一读取信号和从第二读取元件发出的第二读取信号。第一读取信号相对于第二读取信号被延迟以产生延迟的读取信号，并且第二读取信号与延迟的读取信号组合以产生组合的读取信号。从组合的读取信号中检测估计的数据序列。

5. 发明授权

US08422176B1 Method and system for providing a magnetic read transducer having a bilayer magnetic seed layer 有权
标题翻译：用于提供具有双层磁性种子层的磁读取传感器的方法和系统
公开(公告)号：US08422176B1
公开(公告)日：2013-04-16
申请号：US13297204
申请日：2011-11-15
申请人： Qunwen Leng , Laurence L. Chen , Yimin Guo , Yuankai Zheng , Mahendra Pakala
发明人： Qunwen Leng , Laurence L. Chen , Yimin Guo , Yuankai Zheng , Mahendra Pakala
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3254 , H01F10/3272
摘要： A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a bilayer magnetic seed layer, an antiferromagnetic (AFM) layer, and a read sensor. The bilayer magnetic seed layer includes a Ni1-xFex layer and a Ni1-yFey layer on the Ni1-xFex layer, where x is at least 0.3 and not more than 1 and where y is not more than 0.19. The AFM layer resides on the bilayer magnetic seed layer. The read sensor is on the AFM layer.
摘要翻译：描述了一种用于提供磁读取换能器的方法和系统。磁读取传感器包括双层磁性种子层，反铁磁（AFM）层和读取传感器。双层磁性种子层在Ni1-xFex层上包含Ni1-xFex层和Ni1-yFey层，其中x为至少0.3且不大于1，其中y不大于0.19。 AFM层位于双层磁性种子层上。读取传感器位于AFM层上。

6. 发明授权

US08760819B1 Magnetic recording sensor with sputtered antiferromagnetic coupling trilayer between plated ferromagnetic shields 有权
标题翻译：磁性记录传感器与电镀铁磁屏蔽之间的溅射反铁磁耦合三层
公开(公告)号：US08760819B1
公开(公告)日：2014-06-24
申请号：US12978145
申请日：2010-12-23
申请人： Feng Liu , Dehua Han , Ming Sun , Yimin Guo
发明人： Feng Liu , Dehua Han , Ming Sun , Yimin Guo
IPC分类号： G11B5/11 , G11B5/33
CPC分类号： G11B5/3912
摘要： A magnetic recording sensor for use in a data storage device is described. The sensor has a magnetoresistive sensing element and magnetic shields shielding the magnetoresistive sensing element. The magnetic shields include a first plated soft ferromagnetic layer, a second plated soft ferromagnetic layer, and an antiferromagnetic coupling (AFC) trilayer between the first plated soft ferromagnetic layer and the second plated soft ferromagnetic layer. The AFC trilayer includes a first AFC layer of sputtered ferromagnetic material; a second AFC layer of a nonmagnetic antiferromagnetic exchange material, and a third AFC layer of sputtered ferromagnetic material. Shields with AFC trilayers in bottom, side, and/or top shields, and well as between shields are provided. A method of fabricating is also provided.
摘要翻译：描述了用于数据存储装置的磁记录传感器。传感器具有磁阻感测元件和屏蔽磁阻感测元件的磁屏蔽。磁屏蔽包括第一镀层软铁磁层，第二电镀软铁磁层和第一镀层软铁磁层与第二电镀软铁磁层之间的反铁磁耦合（AFC）三层。 AFC三层包括溅射铁磁材料的第一AFC层; 非磁性反铁磁交换材料的第二AFC层和溅射的铁磁材料的第三AFC层。提供了在底部，侧面和/或顶部屏蔽以及屏蔽之间的AFC三层玻璃的屏蔽。还提供了一种制造方法。

7. 发明授权

US11569440B2 Making a memoristic array with an implanted hard mask 有权
公开(公告)号：US11569440B2
公开(公告)日：2023-01-31
申请号：US15412076
申请日：2017-01-23
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/12 , H01L27/24 , H01L45/00 , H01L27/22
摘要： The invention disclosed a method to make an implanted hard mask with ultra-small dimensions for fabricating integrated nonvolatile random access memory. Instead of directly depositing hard mask material on top of the memory film stack element, we first make ultra-small VIA holes on a pattern transfer molding (PTM) layer using a reverse memory mask, then fill in the hard mask material into the VIA holes within the PTM material. Ultra-small hard mask pillars are formed after removing the PTM material. To improve the adhesion of the hard mask pillars with the underneath memory stack element, a hard mask sustaining element (HMSE) is added below PTM. Due to a better materials adhesion between HMSE and the hard mask, a stronger hard mask array can be formed.

8. 发明申请

US20210343934A1 COMPOSITE MULTI-STACK SEED LAYER TO IMPROVE PMA FOR PERPENDICULAR MAGNETIC PINNING 有权
公开(公告)号：US20210343934A1
公开(公告)日：2021-11-04
申请号：US16865810
申请日：2020-05-04
申请人： Yimin Guo , Rongfu Xiao , Jun Chen
发明人： Yimin Guo , Rongfu Xiao , Jun Chen
IPC分类号： H01L43/10 , H01L43/08 , H01F10/30 , H01F10/32 , H01F10/12
摘要： The invention comprises a novel composite multi-stack seed layer (CMSL) having lattice constant matched crystalline structure with the Co layer in above perpendicular magnetic pinning layer (pMPL) so that an excellent epitaxial growth of magnetic super lattice pinning layer [Co/(Pt, Pd or Ni)]n along its FCC (111) orientation can be achieved, resulting in a significant enhancement of perpendicular magnetic anisotropy (PMA) for perpendicular spin-transfer-torque magnetic-random-access memory (pSTT-MRAM) using perpendicular magnetoresistive elements as basic memory cells which potentially replace the conventional semiconductor memory used in electronic chips, especially mobile chips for power saving and non-volatility.

9. 发明申请

US20210327960A1 BOTTOM-PINNED MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT STRUCTURE 有权
公开(公告)号：US20210327960A1
公开(公告)日：2021-10-21
申请号：US16849571
申请日：2020-04-15
申请人： RONGFU XIAO , Yimin Guo , Jun Chen
发明人： RONGFU XIAO , Yimin Guo , Jun Chen
IPC分类号： H01L27/22 , H01L43/08 , H01L43/12 , H01L43/02 , G11C11/16
摘要： An ultra-fast magnetic random access memory (MRAM) comprises a three terminal bottom-pinned composite SOT magnetic tunneling junction (bCSOT-MTJ) element including (counting from top to bottom) a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such bCSOT-MTJ element will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU.

10. 发明授权

US11114611B2 Method to make MRAM with small footprint 有权
公开(公告)号：US11114611B2
公开(公告)日：2021-09-07
申请号：US14678370
申请日：2015-04-03
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L43/08 , H01L43/12 , H01L27/22
摘要： A method to make magnetic random access memory with small footprint using O-ion implantation to form electrically isolated memory pillar and electric (bottom and top) leads, which are made from some oxygen gettering materials, Mg, Zr, Y, Th, Ti, Al, Ba. The doped O-ions react with metal atoms to form fully oxidized metal oxide after high temperature anneal. The method only needs two photolithography patterning and oxygen implantations and no etch and dielectric refill are needed, thus significantly reduce process cost. The method can produce extremely small MRAM cell size with perfectly vertical pillar edges (FIG. 1).

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