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1. 发明申请

US20100110758A1 STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS 有权
公开(公告)号：US20100110758A1
公开(公告)日：2010-05-06
申请号：US12262262
申请日：2008-10-31
申请人： Shaoping Li , Inisk Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Inisk Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00 , H01L47/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.

2. 发明授权

US07791925B2 Structures for resistive random access memory cells 有权
标题翻译：电阻随机存取存储单元的结构
公开(公告)号：US07791925B2
公开(公告)日：2010-09-07
申请号：US12262262
申请日：2008-10-31
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C7/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

3. 发明申请

US20100135061A1 Non-Volatile Memory Cell with Ferroelectric Layer Configurations 审中-公开
标题翻译：具有铁电层配置的非易失性存储单元
公开(公告)号：US20100135061A1
公开(公告)日：2010-06-03
申请号：US12326714
申请日：2008-12-02
申请人： Shaoping Li , Kaizhong Gao , Insik Jin , Song Xue , Haiwen Xi , Zheng Gao , Eileen Yan
发明人： Shaoping Li , Kaizhong Gao , Insik Jin , Song Xue , Haiwen Xi , Zheng Gao , Eileen Yan
IPC分类号： G11C11/22 , H01L29/68
CPC分类号： G11C11/22 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： In some embodiments of the invention a non-volatile memory cell is provided with a first electrode, a second electrode, and one or more side layers of a ferroelectric metal oxide and a ferroelectric material layer between the first and second electrodes. The ferroelectric material layer may be provided between, e.g., adjacent, two side layers of a ferroelectric metal oxide or between a single layer of a ferroelectric metal oxide and an electrode. The ferroelectric metal oxide may in some cases include a uniform layered structure such as a bismuth layer-structured ferroelectric material like Bi4Ti3O12. In some embodiments, the ferroelectric material layer is formed at least partially from PbZrxTi1-xO3. A non-volatile memory array including such memory cells is also provided.
摘要翻译：在本发明的一些实施例中，非易失性存储单元在第一和第二电极之间设置有第一电极，第二电极以及铁电金属氧化物和铁电材料层的一个或多个侧层。铁电材料层可以设置在例如铁电金属氧化物的相邻的两个侧层之间或者设置在单层铁电金属氧化物和电极之间。在一些情况下，铁电金属氧化物可以包括均匀的层状结构，例如诸如Bi 4 Ti 3 O 12的铋层结构的铁电材料。在一些实施例中，铁电材料层至少部分地由PbZrxTi1-xO3形成。还提供了包括这种存储单元的非易失性存储器阵列。

4. 发明授权

US08000128B2 Structures for resistive random access memory cells 有权
标题翻译：电阻随机存取存储单元的结构
公开(公告)号：US08000128B2
公开(公告)日：2011-08-16
申请号：US12835791
申请日：2010-07-14
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

5. 发明申请

US20100277969A1 STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS 有权
标题翻译：电阻随机存取细胞的结构
公开(公告)号：US20100277969A1
公开(公告)日：2010-11-04
申请号：US12835791
申请日：2010-07-14
申请人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Shaoping Li , Insik Jin , Zheng Gao , Eileen Yan , Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/34 , G11C2213/52 , G11C2213/72 , H01L27/2436 , H01L45/04 , H01L45/122 , H01L45/146 , H01L45/147 , H01L45/1666
摘要： A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
摘要翻译：一种电阻随机存取存储器（RRAM）单元，包括具有下部，连续侧部和上部的第一电极，所述下部和所述连续侧部具有外表面和内表面; 具有下部，连续侧部和上部的电阻层，所述下部和所述连续侧部具有外表面和内表面; 和具有下部，上部和外表面的第二电极; 其中电阻层的外表面直接接触第一电极的内表面。

6. 发明授权

US07724469B2 High frequency field assisted write device 有权
标题翻译：高频场辅助写装置
公开(公告)号：US07724469B2
公开(公告)日：2010-05-25
申请号：US11634767
申请日：2006-12-06
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
IPC分类号： G11B5/127 , G11B5/187
CPC分类号： G11B5/1278 , G11B2005/001
摘要： A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.
摘要翻译：磁性写入器包括写入元件和邻近写入元件设置的振荡器件。第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。设置在第一磁性层和第二磁性层之间的第一非磁性层。当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

7. 发明申请

US20080137224A1 High frequency field assisted write device 有权
标题翻译：高频场辅助写装置
公开(公告)号：US20080137224A1
公开(公告)日：2008-06-12
申请号：US11634767
申请日：2006-12-06
申请人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
发明人： Kaizhong Gao , Haiwen Xi , Yiming Shi , Sining Mao , Patrick J. Ryan , Song S. Xue , Shaoping Li
IPC分类号： G11B5/02
CPC分类号： G11B5/1278 , G11B2005/001
摘要： A magnetic writer includes a write element and an oscillation device disposed adjacent to the write element. The first oscillation device includes a first magnetic layer, a second magnetic layer having a magnetization vector including a component perpendicular to a major plane of the first magnetic layer. The first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer. The first oscillation device generates a high-frequency oscillation field when a current is directed perpendicular to the major plane of the first magnetic layer.
摘要翻译：磁性写入器包括写入元件和邻近写入元件设置的振荡器件。第一振荡装置包括第一磁性层，具有包括垂直于第一磁性层的主平面的分量的磁化矢量的第二磁性层。设置在第一磁性层和第二磁性层之间的第一非磁性层。当电流垂直于第一磁性层的主平面时，第一振荡装置产生高频振荡场。

8. 发明申请

US20100227202A1 BIT-PATTERNED MEDIA WITH ANTIFERROMAGNETIC SHELL 有权
标题翻译：具有抗病毒壳体的双向图形介质
公开(公告)号：US20100227202A1
公开(公告)日：2010-09-09
申请号：US12397457
申请日：2009-03-04
申请人： Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： G11B5/706 , G11B5/33 , B05D5/12 , B44C1/22
CPC分类号： G11B5/855 , B82Y10/00 , G11B5/743 , G11B5/746 , G11B5/82 , H01F10/002 , H01L21/02112 , H01L29/82 , Y10T428/115
摘要： A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.
摘要翻译：提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

9. 发明申请

US20100034011A1 Multi-Terminal Resistance Device 有权
标题翻译：多端电阻器件
公开(公告)号：US20100034011A1
公开(公告)日：2010-02-11
申请号：US12412644
申请日：2009-03-27
申请人： Haiwen Xi , Kaizhong Gao , Song Xue
发明人： Haiwen Xi , Kaizhong Gao , Song Xue
IPC分类号： G11C11/00 , H01L43/02
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/76 , H01L45/04 , H01L45/1206 , H01L45/122 , H01L45/146 , H01L45/147
摘要： Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.
摘要翻译：本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。该设备可以包括共享的第四电极以提供额外的编程能力。在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

10. 发明授权

US08455117B2 Bit-patterned stack with antiferromagnetic shell 有权
标题翻译：带有反铁磁壳的位图案堆叠
公开(公告)号：US08455117B2
公开(公告)日：2013-06-04
申请号：US12397457
申请日：2009-03-04
申请人： Kaizhong Gao , Haiwen Xi , Song Xue
发明人： Kaizhong Gao , Haiwen Xi , Song Xue
IPC分类号： H01L29/82 , H01F10/32 , G11B5/74 , H01F10/00 , H01L21/02
CPC分类号： G11B5/855 , B82Y10/00 , G11B5/743 , G11B5/746 , G11B5/82 , H01F10/002 , H01L21/02112 , H01L29/82 , Y10T428/115
摘要： A method of producing bit-patterned media is provided whereby a shell structure is added on a bit-patterned media dot. The shell may be an antiferromagnetic material that will help stabilize the magnetization configuration at the remanent state due to exchange coupling between the dot and its shell. Therefore, this approach also improves the thermal stability of the media dot and helps each individual media dot maintain a single domain state.
摘要翻译：提供了一种生产钻头图案化介质的方法，其中壳结构被添加在钻头图案化介质点上。壳体可以是反铁磁材料，其将由于点和其壳体之间的交换耦合而有助于在剩余状态下稳定磁化结构。因此，这种方法还可以提高介质点的热稳定性，并帮助各个介质点维持单一的畴状态。

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