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51. 发明授权

US09096948B2 Fabrication of low-loss, light-waveguiding, orientation-patterned semiconductor structures 有权
标题翻译：低损耗，光波导，取向图案化半导体结构的制造
公开(公告)号：US09096948B2
公开(公告)日：2015-08-04
申请号：US13562560
申请日：2012-07-31
申请人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
发明人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
IPC分类号： G02B6/10 , C30B25/04 , C30B29/40 , C30B29/42 , C30B29/44 , G02B6/122
CPC分类号： G02B6/122 , C30B25/04 , C30B29/403 , C30B29/42 , C30B29/44 , G02B2006/12035 , G02B2006/12097
摘要： Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.
摘要翻译：提供了制造取向图案化半导体结构的方法。该结构是用于非线性频率转换的光波导结构。这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。制造取向图案化结构的方法利用在异质结构生长过程的中间阶段的一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

52. 发明申请

US20130161168A1 SELF-LOCKING SWITCH 有权
标题翻译：自锁开关
公开(公告)号：US20130161168A1
公开(公告)日：2013-06-27
申请号：US13336541
申请日：2011-12-23
申请人： Dan BOTEZ , Alin Bota , Vladimir Karasik
发明人： Dan BOTEZ , Alin Bota , Vladimir Karasik
IPC分类号： H01H13/14
CPC分类号： H01H21/18 , H01H9/20
摘要： A self-locking switch including a button sub-assembly and a housing sub-assembly. The button sub-assembly includes at least one button with a tab extending from a lower surface at a first end and at least one shaft engagement point on the lower surface at a second end, and a bracket comprising a first end and a second end with a rotation shaft at the second end. The bracket is rotatably connected to the button. The housing sub-assembly includes a switch housing having engagement points, and a switching mechanism in the housing. The button sub-assembly and the housing sub-assembly are joined together by engaging the tab of the button and the first and second ends of the bracket to corresponding engagement points on the switch housing and the engagement points are not accessible from outside the self-locking switch after the button sub-assembly and the housing sub-assembly are assembled together.
摘要翻译：一种自锁开关，包括按钮子组件和壳体子组件。按钮子组件包括至少一个按钮，其具有从第一端的下表面延伸的突出部以及在第二端处的下表面上的至少一个轴接合点，以及支架，其包括第一端和第二端，在第二端的旋转轴。支架可旋转地连接到按钮。壳体子组件包括具有接合点的开关壳体和壳体中的切换机构。按钮子组件和壳体子组件通过将按钮的突片和支架的第一和第二端接合到开关壳体上的相应接合点而接合在一起，并且接合点不能从自对准的外部接近，按钮子组件和外壳子组件组装在一起后的锁定开关。

53. 发明授权

US08428093B2 High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation 有权
标题翻译：具有主动 - 光子晶体结构的大功率量子级联激光器，用于单相，同相模式操作
公开(公告)号：US08428093B2
公开(公告)日：2013-04-23
申请号：US13046269
申请日：2011-03-11
申请人： Dan Botez , Jeremy Daniel Kirch
发明人： Dan Botez , Jeremy Daniel Kirch
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/105 , H01S5/12 , H01S5/2218 , H01S5/223 , H01S5/4031 , H01S2301/166
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a non-uniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
摘要翻译：提供能够发射中长波长红外（即4-12mum）辐射的半导体激光阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构，以及横向延伸穿过包层和光限制结构的多个横向间隔开的沟槽区域，并且部分地延伸到QCL结构中。沟槽区域限定由激光器阵列器件中的元件区域分开的多个横向间隔的元件区域。元件区域的特征在于横跨其宽度的不均匀的结构。作为这种结构不均匀的结果，相对于由元件区域的耦合的基本横向模式组成的阵列模式，优选地抑制由元件区域的耦合的一阶横向模式组成的阵列模式。

54. 发明授权

US07856042B2 High efficiency intersubband semiconductor lasers 有权
标题翻译：高效子带半导体激光器
公开(公告)号：US07856042B2
公开(公告)日：2010-12-21
申请号：US12140414
申请日：2008-06-17
申请人： Dan Botez , Dapeng P. Xu , Luke J. Mawst
发明人： Dan Botez , Dapeng P. Xu , Luke J. Mawst
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

55. 发明申请

US20080043794A1 Intersubband quantum box stack lasers 有权
公开(公告)号：US20080043794A1
公开(公告)日：2008-02-21
申请号：US11507039
申请日：2006-08-18
申请人： Dan Botez
发明人： Dan Botez
IPC分类号： H01S5/00
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/105 , H01S5/2004 , H01S5/3412
摘要： The present invention provides semiconductor lasers having an Active-Photonic-Crystal (APC) structure that allows scaling of the coherent power by using a waveguide having a periodic structure that selects operation in a single spatial mode from large-aperture devices. The lasers include an active medium that includes an array of quantum box ministacks, each ministack containing 2 to 5 vertically stacked, coupled quantum boxes.

56. 发明授权

US06363092B1 Narrow spectral width high power distributed feedback semiconductor lasers 有权
标题翻译：窄光谱宽度大功率分布反馈半导体激光器
公开(公告)号：US06363092B1
公开(公告)日：2002-03-26
申请号：US09769185
申请日：2001-01-24
申请人： Dan Botez , Thomas L Earles , Luke J. Mawst
发明人： Dan Botez , Thomas L Earles , Luke J. Mawst
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/20 , H01S5/343 , H01S5/34313 , H01S5/3436 , H01S2302/00
摘要： High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 &mgr;m or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths.
摘要翻译：大功率边缘发射半导体激光器被形成为以精确选择的波长发射非常窄的光谱宽度。在半导体衬底（例如GaAs）上生长外延结构，并且包括发生发光的有源区，上限和下限制层以及上下包层。分布式反馈光栅形成在上约束层的无铝部分中，以作用于在有源区域中产生的光以产生激光作用并从半导体激光器的边缘面发射光。这样的器件非常适合于在包括可见波长的波长下在1瓦特范围内提供宽条纹，例如在50至100微米或更大的范围内，以及高功率。

57. 发明授权

US06219365B1 High performance aluminum free active region semiconductor lasers 有权
标题翻译：高性能无铝有源区半导体激光器
公开(公告)号：US06219365B1
公开(公告)日：2001-04-17
申请号：US09185354
申请日：1998-11-03
申请人： Luke J. Mawst , Dan Botez , Abdulrahman Al-Muhanna , Jerome Kent Wade
发明人： Luke J. Mawst , Dan Botez , Abdulrahman Al-Muhanna , Jerome Kent Wade
IPC分类号： H01S5343
CPC分类号： B82Y20/00 , H01S5/3202 , H01S5/3403 , H01S5/34326
摘要： The semiconductor laser emitting light in the wavelength range of about 700 nm to 800 nm utilizes an aluminum-free active region layer. An epitaxial structure is grown on a GaAs or AlGaAs substrate and includes an active region layer, confinement layers adjacent the active region layer, and cladding layers adjacent the confinement layers. The active region layer comprises at least one compressively strained InGaAsP quantum well surrounded by transitional layers, with the composition and width of the active region selected to emit light at a selected wavelength, particularly between about 700 nm and 800 nm. High band-gap InGaAlP cladding layers and confinement layers may be utilized to suppress carrier leakage, and the epitaxial structure may be grown on a misoriented substrate to further reduce carrier leakage from the quantum well and improve the crystalline quality of the quantum well. The lasers are capable of operating at high powers with high reliability for longer lifetimes than are obtainable with laser structures emitting the same wavelength range which require the use of aluminum in the active region.
摘要翻译：在约700nm至800nm的波长范围内发射光的半导体激光器使用无铝活性区域层。在GaAs或AlGaAs衬底上生长外延结构，并且包括有源区域层，与有源区域层相邻的限制层以及邻近限制层的覆层。有源区层包括由过渡层包围的至少一个压缩应变的InGaAsP量子阱，其中有源区的组成和宽度被选择为发射选定波长，特别是在约700nm与800nm之间的光。可以利用高带隙InGaAlP包覆层和限制层来抑制载流子泄漏，并且外延结构可以在取向错误的衬底上生长，以进一步减少量子阱中的载流子泄漏并提高量子阱的结晶质量。激光器能够以高功率运行，具有比需要在有源区域中使用铝的相同波长范围的激光结构可获得更长寿命的更长寿命。

58. 发明授权

US06195381B1 Narrow spectral width high-power distributed feedback semiconductor lasers 失效
标题翻译：窄光谱宽度大功率分布反馈半导体激光器
公开(公告)号：US06195381B1
公开(公告)日：2001-02-27
申请号：US09067189
申请日：1998-04-27
申请人： Dan Botez , Thomas L. Earles , Luke J. Mawst
发明人： Dan Botez , Thomas L. Earles , Luke J. Mawst
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/20 , H01S5/343 , H01S5/34313 , H01S5/3436 , H01S2302/00
摘要： High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 &mgr;m or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths.
摘要翻译：大功率边缘发射半导体激光器被形成为以精确选择的波长发射非常窄的光谱宽度。在半导体衬底（例如GaAs）上生长外延结构，并且包括发生发光的有源区，上限和下限制层以及上下包层。分布式反馈光栅形成在上约束层的无铝部分中，以作用于在有源区域中产生的光以产生激光作用并从半导体激光器的边缘面发射光。这样的器件非常适合于在包括可见波长的波长下在1瓦特范围内提供宽条纹，例如在50至100微米或更大的范围内，以及高功率。

59. 发明授权

US6167073A High power laterally antiguided semiconductor light source with reduced transverse optical confinement 失效
标题翻译：具有减小的横向光学限制的大功率横向防卫半导体光源
公开(公告)号：US6167073A
公开(公告)日：2000-12-26
申请号：US121629
申请日：1998-07-23
申请人： Dan Botez , Iulian Basarab Petrescu-Prahova , Luke J. Mawst
发明人： Dan Botez , Iulian Basarab Petrescu-Prahova , Luke J. Mawst
IPC分类号： H01S5/026 , H01S5/10 , H01S5/20 , H01S5/32 , H01S5/40 , H01S5/50 , H01S3/085
CPC分类号： H01S5/4031 , B82Y20/00 , H01S5/026 , H01S5/1064 , H01S5/2004 , H01S5/2031 , H01S5/205 , H01S5/3213 , H01S5/34386 , H01S5/50
摘要： A semiconductor structure for use as a laser or amplifier has a multilayer structure including a substrate, an active region, optical confinement and cladding layers on each side of the active region to surround the active region. The structure includes at least one core element at which light emission occurs and interelement regions laterally adjacent to the core element with the effective refractive index of the interelement regions higher than that of the core element to provide antiguiding of light emitted in the core element. The optical confinement and cladding layers on opposite sides of the active region have different indexes of refraction to provide an optical waveguiding structure in the transverse direction in the core element which is asymmetrical and which favors lasing only in the fundamental transverse mode. The structure allows larger core elements to be utilized than otherwise possible and results in a significantly increased light emission spot size enabling much higher emission power levels for lasers and higher saturation power levels for amplifiers.
摘要翻译：用作激光器或放大器的半导体结构具有多层结构，该多层结构包括在有源区的每一侧上包围有源区的衬底，有源区，光限制和包覆层。该结构包括发射发光的至少一个核心元件和与芯元件横向相邻的元件区域，其中元件区域的有效折射率高于芯元件的有效折射率，以提供在芯元件中发射的光的防护。有源区相对侧的光学限制和包层具有不同的折射率，以在芯元件中的横向上提供不对称的光波导结构，并且仅在基本横向模式中有利于激光。该结构允许使用比其他可能的更大的芯元件，并且导致显着增加的发光点尺寸，使得激光器具有更高的发射功率水平和用于放大器的较高饱和功率电平。

60. 发明授权

US5606570A High power antiguided semiconductor laser with interelement loss 失效
标题翻译：具有元件损耗的高功率防护半导体激光器
公开(公告)号：US5606570A
公开(公告)日：1997-02-25
申请号：US435598
申请日：1995-05-08
申请人： Dan Botez , Charles A. Zmudzinski , Luke J. Mawst
发明人： Dan Botez , Charles A. Zmudzinski , Luke J. Mawst
IPC分类号： H01S5/20 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/20
摘要： A semiconductor laser is formed with an array of a small number (two to ten) antiguide elements each containing a portion of the active region of the semiconductor laser. Interelement structures between the antiguide elements are formed to have a relatively high interelement loss coefficient (at least 100 cm.sup.-1), providing excellent discrimination between the resonant in-phase mode and the unwanted nonresonant modes. Lateral reflectors may be utilized at the edge of the array to reflect light back to the array, but are not necessary when the antiguide elements are sufficiently wide and the effective index step between the antiguide elements and interelement structures is sufficiently large. Because only a relatively small number (10 or less) of antiguide elements are utilized, fabrication tolerances are relatively large and practical devices may be produced with satisfactory yields. The semiconductor laser of the invention may be utilized as a master oscillator integrated with flared antiguided master-oscillator power-amplifiers (MOPA) to provide uniform MOPA near-field intensity profiles at high power levels.
摘要翻译：形成半导体激光器，其具有每个包含半导体激光器的有源区域的一部分的少数（2至10个）防护元件的阵列。防反射元件之间的入射结构形成为具有相对高的元件损耗系数（至少100cm -1），提供谐振同相模式和不需要的非谐振模式之间的优异辨别。可以在阵列的边缘处利用侧向反射器将光反射回阵列，但是当防御元件足够宽并且防护元件和元件结构之间的有效折射率步骤足够大时，这些反射器不是必需的。由于仅使用少量（10个或更少）的防护元件，所以制造公差相对较大，并且可以以令人满意的产量生产实用的装置。本发明的半导体激光器可以用作与扩展的防御主振荡器功率放大器（MOPA）集成的主振荡器，以在高功率电平下提供均匀的MOPA近场强度分布。

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