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1. 发明授权

US06363092B1 Narrow spectral width high power distributed feedback semiconductor lasers 有权
标题翻译：窄光谱宽度大功率分布反馈半导体激光器
公开(公告)号：US06363092B1
公开(公告)日：2002-03-26
申请号：US09769185
申请日：2001-01-24
申请人： Dan Botez , Thomas L Earles , Luke J. Mawst
发明人： Dan Botez , Thomas L Earles , Luke J. Mawst
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/20 , H01S5/343 , H01S5/34313 , H01S5/3436 , H01S2302/00
摘要： High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 &mgr;m or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths.
摘要翻译：大功率边缘发射半导体激光器被形成为以精确选择的波长发射非常窄的光谱宽度。在半导体衬底（例如GaAs）上生长外延结构，并且包括发生发光的有源区，上限和下限制层以及上下包层。分布式反馈光栅形成在上约束层的无铝部分中，以作用于在有源区域中产生的光以产生激光作用并从半导体激光器的边缘面发射光。这样的器件非常适合于在包括可见波长的波长下在1瓦特范围内提供宽条纹，例如在50至100微米或更大的范围内，以及高功率。

2. 发明授权

US06195381B1 Narrow spectral width high-power distributed feedback semiconductor lasers 失效
标题翻译：窄光谱宽度大功率分布反馈半导体激光器
公开(公告)号：US06195381B1
公开(公告)日：2001-02-27
申请号：US09067189
申请日：1998-04-27
申请人： Dan Botez , Thomas L. Earles , Luke J. Mawst
发明人： Dan Botez , Thomas L. Earles , Luke J. Mawst
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/12 , H01S5/20 , H01S5/343 , H01S5/34313 , H01S5/3436 , H01S2302/00
摘要： High power edge emitting semiconductor lasers are formed to emit with very narrow spectral width at precisely selected wavelengths. An epitaxial structure is grown on a semiconductor substrate, e.g., GaAs, and includes an active region at which light emission occurs, upper and lower confinement layers and upper and lower cladding layers. A distributed feedback grating is formed in an aluminum free section of the upper confinement layer to act upon the light generated in the active region to produce lasing action and emission of light from an edge face of the semiconductor laser. Such devices are well suited to being formed to provide a wide stripe, e.g., in the range of 50 to 100 &mgr;m or more, and high power, in the 1 watt range, at wavelengths including visible wavelengths.
摘要翻译：大功率边缘发射半导体激光器被形成为以精确选择的波长发射非常窄的光谱宽度。在半导体衬底（例如GaAs）上生长外延结构，并且包括发生发光的有源区，上限和下限制层以及上下包层。分布式反馈光栅形成在上约束层的无铝部分中，以作用于在有源区域中产生的光以产生激光作用并从半导体激光器的边缘面发射光。这样的器件非常适合于在包括可见波长的波长下在1瓦特范围内提供宽条纹，例如在50至100微米或更大的范围内，以及高功率。

3. 发明授权

US5889805A Low-threshold high-efficiency laser diodes with aluminum-free active region 失效
标题翻译：具有无铝活性区域的低阈值高效激光二极管
公开(公告)号：US5889805A
公开(公告)日：1999-03-30
申请号：US741632
申请日：1996-11-01
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/343 , H01S5/3211 , H01S5/3213 , H01S5/32333 , H01S5/3409 , H01S5/3434
摘要： Semiconductor diode lasers include an aluminum free active region including at least one active layer having a general composition In.sub.(1-x) Ga.sub.x As.sub.y P.sub.(1-y) where 0.ltoreq.y.ltoreq.1; two confinement layers bounding the active region and having a general composition In.sub.(1-x) (Ga.sub.(1-z) Al.sub.z)x P wherein aluminum content z may be zero; and a lower cladding layer, and at least one upper cladding layer adjacent the confinement layers. The cladding layers have the same general composition as the adjacent confinement layer, but always have a finite aluminum content. The aluminum content of the cladding layers is selected such that the cladding layers have a energy bandgap greater than the energy bandgap of the confinement layers.
摘要翻译：半导体二极管激光器包括无铝的有源区，包括至少一个具有一般组成In（1-x）GaxAsyP（1-y）的活性层，其中0≤y≤1; 界定有源区并具有一般组成In（1-x）（Ga（1-z）Alz）xP的两个约束层，其中铝含量z可以为零; 和下包层，以及与限制层相邻的至少一个上包层。包覆层具有与相邻限制层相同的总体组成，但总是具有有限的铝含量。选择包覆层的铝含量使得包层具有比限制层的能带隙大的能带隙。

4. 发明授权

US4866724A Wide-waveguide interferometric array with interelement losses 失效
标题翻译：具有元件损耗的宽波导干涉阵列
公开(公告)号：US4866724A
公开(公告)日：1989-09-12
申请号：US233390
申请日：1988-08-18
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser diode array structure in which interelement losses are deliberately included, to favor operation at higher-order array modes of operation, and thereby avoid the disadvantage of beam broadening that results when lower-order array modes of operation are used at very high drive currents. To provide a desirable far-field radiation pattern, the structure includes a wide-waveguide interferometric configuration to select only the lowest of the higher-order modes. The desired interelement losses are obtained in the illustrative embodiment by a buffer layer that provides antiguiding in a transverse direction, but only in the interelement regions. The buffer layer is transparent, for strong interelement coupling and stability of operation. The illustrative embodiment was operated at drive currents in excess of four times threshold current, and with beam broadening only slightly above the diffraction limit.
摘要翻译：一种半导体激光二极管阵列结构，其中有意地包括元件损耗，以有利于在高阶阵列工作模式下的操作，从而避免了当在非常高的驱动下使用低阶阵列工作模式时导致的光束变宽的缺点电流。为了提供期望的远场辐射图，该结构包括仅选择较低阶模式的宽波导干涉配置。在说明性实施例中，通过缓冲层在横向方向上提供防护，但仅在内部区域中获得所需的元件损耗。缓冲层是透明的，用于强耦合和稳定操作。说明性实施例在超过阈值电流的四倍的驱动电流下操作，并且光束变宽仅略高于衍射极限。

5. 发明申请

US20140037258A1 FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED SEMICONDUCTOR STRUCTURES 有权
标题翻译：低损耗，轻微波动，方位图形半导体结构的制造
公开(公告)号：US20140037258A1
公开(公告)日：2014-02-06
申请号：US13562560
申请日：2012-07-31
申请人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
发明人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
IPC分类号： C30B25/04 , G02B6/10
CPC分类号： G02B6/122 , C30B25/04 , C30B29/403 , C30B29/42 , C30B29/44 , G02B2006/12035 , G02B2006/12097
摘要： Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.
摘要翻译：提供了制造取向图案化半导体结构的方法。该结构是用于非线性频率转换的光波导结构。这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。制造取向图案化结构的方法利用在异质结构生长过程的中间阶段的一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

6. 发明授权

US08259767B2 High-power quantum cascade lasers with active-photonic-crystal structure 有权
标题翻译：具有有源光子晶体结构的大功率量子级联激光器
公开(公告)号：US08259767B2
公开(公告)日：2012-09-04
申请号：US12639178
申请日：2009-12-16
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S3/04 , H01S5/00 , H01L21/00 , H01L21/76
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02461 , H01S5/2224 , H01S5/3213 , H01S5/4031 , H01S5/4081
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.
摘要翻译：提供能够发射中长波长红外（即4-12μm）辐射的半导体激光阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的横向间隔的沟槽区域，横向延伸通过光学限制和包层结构，并且部分地延伸到QCL结构中。每个沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定了多个横向间隔开的元件由激光阵列器件中的元件区域分开的区域。

7. 发明申请

US20120201263A1 HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE 有权
标题翻译：具有活性光子晶体结构的大功率量子级激光器
公开(公告)号：US20120201263A1
公开(公告)日：2012-08-09
申请号：US12639178
申请日：2009-12-16
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S5/34 , H01L33/06
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02461 , H01S5/2224 , H01S5/3213 , H01S5/4031 , H01S5/4081
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.
摘要翻译：提供能够发射中长波长红外线（即4-12μm）辐射的半导体激光器阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的横向间隔的沟槽区域，横向延伸通过光学限制和包层结构，并且部分地延伸到QCL结构中。每个沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定了多个横向间隔开的元件由激光阵列器件中的元件区域分开的区域。

8. 发明申请

US20090022196A1 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 有权
标题翻译：高效率的半导体激光器
公开(公告)号：US20090022196A1
公开(公告)日：2009-01-22
申请号：US12140414
申请日：2008-06-17
申请人： Dan Botez , Dapeng P. Xu , Luke J. Mawst
发明人： Dan Botez , Dapeng P. Xu , Luke J. Mawst
IPC分类号： H01S5/343 , H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

9. 发明授权

US5063570A Semiconductor laser arrays using leaky wave interarray coupling 失效
标题翻译：半导体激光阵列使用漏波阵列耦合
公开(公告)号：US5063570A
公开(公告)日：1991-11-05
申请号：US604315
申请日：1990-10-29
申请人： Dan Botez , Luke J. Mawst , Gary L. Peterson
发明人： Dan Botez , Luke J. Mawst , Gary L. Peterson
IPC分类号： H01S5/40
CPC分类号： H01S5/4031
摘要： A semiconductor laser array of antiguides having a large number of antiguide elements to provide relatively high optical power output with a high degree of coherence and array mode discrimination. The antiguide elements are grouped into array cells that are separated by interarray regions having a width and refractive index selected to produce a resonance condition in the 0.degree.-phase-shift array mode. Each array cell is also designed to operate in the resonant condition, and losses in the interarray regions discriminate against modes other than the 0.degree.-phase-shift mode. The entire group of cells operates as a high-power, coherent ensemble, without the degradation of mode discrimination and beam quality usually associated with large numbers of waveguide elements.
摘要翻译：一种具有大量抗划线元件的防划离元件的半导体激光器阵列，以提供相对较高的光功率输出，具有高度的相干性和阵列模式鉴别。反射元件被分组成阵列单元，该阵列单元被选择为具有0° - 移相阵列模式的谐振条件的宽度和折射率的区域间隔开。每个阵列单元还被设计为在谐振条件下工作，并且在阵列区域中的损耗区别于0° - 相移模式以外的模式。整个单元组作为大功率相干集合而工作，而不会降低通常与大量波导元件相关的模式识别和光束质量。

10. 发明授权

US06229153B1 High peak current density resonant tunneling diode 失效
标题翻译：高峰值电流密度谐振隧道二极管
公开(公告)号：US06229153B1
公开(公告)日：2001-05-08
申请号：US08879161
申请日：1997-06-19
申请人： Dan Botez , Luke J. Mawst , Ali R. Mirabedini
发明人： Dan Botez , Luke J. Mawst , Ali R. Mirabedini
IPC分类号： H01L2972
CPC分类号： B82Y10/00 , H01L29/882
摘要： A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in GaAs, with a preferred quantum well layer formed of InGaAs. The resonant tunneling diode structure is grown by a metal organic chemical vapor deposition process on the surface of the nominally exact (100) GaAs substrate. Layers of doped GaAs may be formed on either side of the multilayer resonant tunneling diode structure, and spacer layers of GaAs may also be provided on either side of the barrier layers to reduce the intrinsic capacitance of the structure.
摘要翻译：在砷化镓材料系统中制造谐振隧穿二极管，其中AlGaAs的阻挡层与它们之间具有低带隙材料的量子阱层。选择阱的材料以将GaAs中的导带的边缘的第二能级调整为由InGaAs形成的优选量子阱层。谐振隧道二极管结构通过金属有机化学气相沉积工艺在标称精确（100）GaAs衬底的表面上生长。可以在多层谐振隧道二极管结构的任一侧上形成掺杂GaAs的层，并且还可以在势垒层的任一侧上设置GaAs的间隔层以降低结构的本征电容。

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