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1. 发明授权

US08879595B2 Quantum cascade structures on metamorphic buffer layer structures 有权
标题翻译：量子级联结构在变质缓冲层结构上
公开(公告)号：US08879595B2
公开(公告)日：2014-11-04
申请号：US13283855
申请日：2011-10-28
申请人： Luke J. Mawst , Jeremy D. Kirch , Thomas F. Kuech
发明人： Luke J. Mawst , Jeremy D. Kirch , Thomas F. Kuech
IPC分类号： H01S5/00 , H01L21/02 , H01S5/34
CPC分类号： H01L21/02505 , B82Y20/00 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/0251 , H01L21/02546 , H01L21/0262 , H01S5/3402 , H01S5/3403 , H01S2304/04
摘要： Semiconductor structures, quantum cascade structures and lasers including the structures are provided. The semiconductor structures include a substrate, a metamorphic buffer layer structure over the substrate, and a quantum cascade structure including a superlattice of quantum wells and barriers over the metamorphic buffer layer structure. The substrate may be GaAs and the quantum cascade structure may be an InGaAs/InAlAs superlattice, including one or more barriers of AlAs.
摘要翻译：提供了包括结构的半导体结构，量子级联结构和激光器。半导体结构包括衬底，在衬底上的变质缓冲层结构，以及包括量子阱的超晶格和变质缓冲层结构上的势垒的量子级联结构。衬底可以是GaAs，并且量子级联结构可以是InGaAs / InAlAs超晶格，包括AlAs的一个或多个屏障。

2. 发明授权

US08668370B2 Dimpled light distribution plates 有权
标题翻译：暗淡的配光板
公开(公告)号：US08668370B2
公开(公告)日：2014-03-11
申请号：US13463151
申请日：2012-05-03
申请人： Leon McCaughan , Thomas F. Kuech , Christopher J. Zenner , Cedric Meyers
发明人： Leon McCaughan , Thomas F. Kuech , Christopher J. Zenner , Cedric Meyers
IPC分类号： F21V11/00 , F21V9/14
CPC分类号： G02B6/0036 , G02B6/006
摘要： Dimpled plates for light distribution and concentration are provided. Also provided are apparatus incorporating the plates as waveguides, and methods for using the dimpled plates for distributing or concentrating input light. The dimpled plates are designed to spatially distribute light from each of one or more near point light sources into a pixelated light projection using an array of reflective conical light deflection elements.
摘要翻译：提供了用于配光和浓缩的刨光板。还提供了将板作为波导并入的装置，以及使用凹坑板来分配或集中输入光的方法。凹陷板被设计成使用一组反射式圆锥形光偏转元件将来自一个或多个近点光源中的每一个的光空间分布到像素化光投影中。

3. 发明申请

US20140037258A1 FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED SEMICONDUCTOR STRUCTURES 有权
标题翻译：低损耗，轻微波动，方位图形半导体结构的制造
公开(公告)号：US20140037258A1
公开(公告)日：2014-02-06
申请号：US13562560
申请日：2012-07-31
申请人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
发明人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
IPC分类号： C30B25/04 , G02B6/10
CPC分类号： G02B6/122 , C30B25/04 , C30B29/403 , C30B29/42 , C30B29/44 , G02B2006/12035 , G02B2006/12097
摘要： Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.
摘要翻译：提供了制造取向图案化半导体结构的方法。该结构是用于非线性频率转换的光波导结构。这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。制造取向图案化结构的方法利用在异质结构生长过程的中间阶段的一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

4. 发明授权

US4766093A Chemically formed self-aligned structure and wave guide 失效
标题翻译：化学形成自对准结构和波导
公开(公告)号：US4766093A
公开(公告)日：1988-08-23
申请号：US62332
申请日：1987-06-09
申请人： Harold J. Hovel , Thomas F. Kuech
发明人： Harold J. Hovel , Thomas F. Kuech
IPC分类号： G02B6/13 , H01L21/033 , H01L21/308 , H01L21/316 , H01S5/02 , H01L21/20
CPC分类号： H01L21/02236 , G02B6/13 , H01L21/02238 , H01L21/02244 , H01L21/0331 , H01L21/3081 , H01L21/3086 , H01L21/31658 , H01L21/31662 , H01L21/31683 , H01S5/0205
摘要： The formation of a self-aligned semiconductor structure in a semiconductor substrate is described by providing a first and a second layer or a wave guide of different chemical composition above said semiconductor substrate, said second layer providing a shape defining opening permitting chemical conversion of said first layer adjacent said substrate to a third chemical composition different from said first and second layers. The third chemical composition is removed with a reagent that reacts only with said third composition and not with said first and second layers for the manufacture of self-aligned semiconductor structures. The third chemical composition is retained in the formation of a wave guide and has an index of refraction different from the first layer.
摘要翻译：通过在所述半导体衬底上方提供不同化学成分的第一层和第二层或波导来描述在半导体衬底中形成自对准半导体结构，所述第二层提供允许化学转化所述第一层与所述第一和第二层不同的第三化学组成。第三化学成分用仅与所述第三组合物反应的试剂除去，而不与所述第一和第二层反应，用于制造自对准的半导体结构。第三种化学成分保留在波导的形成中，并且具有与第一层不同的折射率。

5. 发明授权

US09096948B2 Fabrication of low-loss, light-waveguiding, orientation-patterned semiconductor structures 有权
标题翻译：低损耗，光波导，取向图案化半导体结构的制造
公开(公告)号：US09096948B2
公开(公告)日：2015-08-04
申请号：US13562560
申请日：2012-07-31
申请人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
发明人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
IPC分类号： G02B6/10 , C30B25/04 , C30B29/40 , C30B29/42 , C30B29/44 , G02B6/122
CPC分类号： G02B6/122 , C30B25/04 , C30B29/403 , C30B29/42 , C30B29/44 , G02B2006/12035 , G02B2006/12097
摘要： Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.
摘要翻译：提供了制造取向图案化半导体结构的方法。该结构是用于非线性频率转换的光波导结构。这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。制造取向图案化结构的方法利用在异质结构生长过程的中间阶段的一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

6. 发明申请

US20110097837A1 GaN-BASED NITRIC OXIDE SENSORS AND METHODS OF MAKING AND USING THE SAME 有权
标题翻译：基于GaN的氮氧化物传感器及其制造和使用方法
公开(公告)号：US20110097837A1
公开(公告)日：2011-04-28
申请号：US12948946
申请日：2010-11-18
申请人： Michael A. Garcia , Scott D. Wolter , April S. Brown , Joseph Bonaventura , Thomas F. Kuech
发明人： Michael A. Garcia , Scott D. Wolter , April S. Brown , Joseph Bonaventura , Thomas F. Kuech
IPC分类号： H01L21/18
CPC分类号： G01N33/0037 , G01N27/4141 , Y02A50/245
摘要： GaN-based heterojunction field effect transistor (HFET) sensors are provided with engineered, functional surfaces that act as pseudo-gates, modifying the drain current upon analyte capture. In some embodiments, devices for sensing nitric oxide (NO) species in a NO-containing fluid are provided which comprise a semiconductor structure that includes a pair of separated GaN layers and an AlGaN layer interposed between and in contact with the GaN layers. Source and drain contact regions are formed on one of the GaN layers, and an exposed GaN gate region is formed between the source and drain contact regions for contact with the NO-containing fluid. The semiconductor structure most preferably is formed on a suitable substrate (e.g., SiC). An insulating layer may be provided so as to cover the semiconductor structure. The insulating layer will have a window formed therein so as to maintain exposure of the GaN gate region and thereby allow the gate region to contact the NO-containing fluid. Electrical contact pads are preferably provided in some embodiments so as to be in electrical contact with the source and drain contact regions, respectively. Electrical leads may thus be connected to the contact pads. According to other embodiments, the NO detection device will include a metalloporphyrin adsorbed on the GaN gate region.
摘要翻译： GaN基异质结场效应晶体管（HFET）传感器具有用作伪栅极的工程化功能表面，在分析物捕获时修改漏极电流。在一些实施例中，提供了用于感测含NO流体中的一氧化氮（NO）物质的装置，其包括半导体结构，该半导体结构包括一对分离的GaN层和介于GaN层之间并与GaN层接触的AlGaN层。源极和漏极接触区域形成在GaN层之一上，并且在源极和漏极接触区域之间形成暴露的GaN栅极区域以与含NO的流体接触。最优选地，半导体结构形成在合适的衬底（例如，SiC）上。可以提供绝缘层以覆盖半导体结构。绝缘层将具有形成在其中的窗口，以便保持GaN栅极区域的曝光，从而允许栅极区域与含NO的流体接触。在一些实施例中，电接触焊盘优选地设置成分别与源极和漏极接触区域电接触。因此，电引线可以连接到接触垫。根据其它实施方案，NO检测装置将包括吸附在GaN栅极区上的金属卟啉。

7. 发明授权

US07865048B2 Nested waveguides 有权
标题翻译：嵌套波导
公开(公告)号：US07865048B2
公开(公告)日：2011-01-04
申请号：US12208026
申请日：2008-09-10
申请人： Leon McCaughan , Chad Staus , Thomas F. Kuech
发明人： Leon McCaughan , Chad Staus , Thomas F. Kuech
IPC分类号： G02B6/00
CPC分类号： G02F1/3534 , G02F1/365 , G02F2203/13
摘要： A radiation source or detector including a nested waveguide structure is provided. A smaller waveguide provides wave guiding for radiation of shorter wavelength. The smaller waveguide is embedded within a larger waveguide that provides wave guiding for radiation of longer wavelength. Wavelength conversion between the shorter wavelength and the longer wavelength can be realized through a nonlinear process.
摘要翻译：提供了包括嵌套波导结构的辐射源或检测器。较小的波导为较短波长的辐射提供波导。较小的波导嵌入在较大波导内，为更长波长的辐射提供波导。可以通过非线性过程实现较短波长和较长波长之间的波长转换。

8. 发明授权

US07319159B1 Cyclohexadien-2,4-ylsilane and its derivatives, synthesis of the same, and the pyrolysis of the same to silane 失效
标题翻译：环己二烯-2,4-基硅烷及其衍生物，其合成及其与硅烷的热解
公开(公告)号：US07319159B1
公开(公告)日：2008-01-15
申请号：US11531650
申请日：2006-09-13
申请人： Dovas A. Saulys , Thomas F. Kuech , John A. Roberts
发明人： Dovas A. Saulys , Thomas F. Kuech , John A. Roberts
IPC分类号： C07F7/08
CPC分类号： C07F7/0896
摘要： Silane gas precursor compounds having the formula (I): wherein R1, R2, and R3 each can independently be hydrogen or halogen and wherein the cyclohexadiene ring can have one or more substituents selected from the group consisting of a saturated or unsaturated, straight chain or branched alkyl group, a halogen, NO2, and C≡N are disclosed. In one form, the silane gas precursor compound is cyclohexadien-2,4-ylsilane, an air-stable liquid, that can be thermolyzed in a pyrolysis process to efficiently generate high purity silane gas. The compounds of the present invention can thus serve as a “point-of-use” precursor for silane gas.
摘要翻译：具有式（I）的硅烷气体前体化合物：其中R 1，R 2和R 3各自可以独立地是氢或卤素，和其中所述环己二烯环可以具有一个或多个选自饱和或不饱和的直链或支链烷基，卤素，NO 2和C≡N的取代基。在一种形式中，硅烷气体前体化合物是环己酮-2,4-基硅烷，一种空气稳定的液体，可以在热解过程中进行热分解以有效地产生高纯度的硅烷气体。因此，本发明的化合物可以用作硅烷气体的“使用点”前体。

9. 发明授权

US06765240B2 Bulk single crystal gallium nitride and method of making same 失效
标题翻译：散装单晶氮化镓及其制造方法
公开(公告)号：US06765240B2
公开(公告)日：2004-07-20
申请号：US09933943
申请日：2001-08-21
申请人： Michael A. Tischler , Thomas F. Kuech , Robert P. Vaudo
发明人： Michael A. Tischler , Thomas F. Kuech , Robert P. Vaudo
IPC分类号： H01L310328
CPC分类号： C30B33/00 , B82Y15/00 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/36 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/02439 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/02529 , H01L21/0254 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02664 , H01L33/007 , H01L33/0075 , H01L33/0079 , Y10S117/915 , Y10T428/13 , Y10T428/21
摘要： A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e.g., with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.
摘要翻译：一种单晶M * N制品，其可以通过包括以下步骤的方法制备：提供具有与M * N外延相容的结晶表面的材料的基材; 在衬底的表面上沉积单晶M * N层; 从单晶M * N层除去衬底，例如用施加到衬底去除其的蚀刻剂，得到单晶M * N层作为单晶M * N制品。本体单晶M * N制品适用于在其上制造微电子结构的基底，以产生包含本体单晶M * N基底或其前体结构的微电子器件。

10. 发明申请

US20130294064A1 DIMPLED LIGHT DISTRIBUTION PLATES 有权
标题翻译：分光板分配板
公开(公告)号：US20130294064A1
公开(公告)日：2013-11-07
申请号：US13463151
申请日：2012-05-03
申请人： Leon McCaughan , Thomas F. Kuech , Christopher J. Zenner , Cedric Meyers
发明人： Leon McCaughan , Thomas F. Kuech , Christopher J. Zenner , Cedric Meyers
IPC分类号： F21V7/00
CPC分类号： G02B6/0036 , G02B6/006
摘要： Dimpled plates for light distribution and concentration are provided. Also provided are apparatus incorporating the plates as waveguides, and methods for using the dimpled plates for distributing or concentrating input light. The dimpled plates are designed to spatially distribute light from each of one or more near point light sources into a pixelated light projection using an array of reflective conical light deflection elements.
摘要翻译：提供了用于配光和浓缩的刨光板。还提供了将板作为波导并入的装置，以及使用凹坑板来分配或集中输入光的方法。凹陷板被设计成使用一组反射式圆锥形光偏转元件将来自一个或多个近点光源中的每一个的光空间分布到像素化光投影中。

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