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1. 发明授权

US08848754B2 Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers 有权
标题翻译：用于抑制电子泄漏的多量子阱结构和量子级联激光器中阈值电流密度的降低
公开(公告)号：US08848754B2
公开(公告)日：2014-09-30
申请号：US13591645
申请日：2012-08-22
申请人： Dan Botez , Jae Cheol Shin
发明人： Dan Botez , Jae Cheol Shin
IPC分类号： H01S5/00 , H01S5/34 , H01S5/20 , H01S5/32
CPC分类号： H01S5/2009 , B82Y20/00 , H01S5/00 , H01S5/20 , H01S5/2013 , H01S5/3216 , H01S5/34 , H01S5/3402 , H01S5/3407 , H01S5/3412 , H01S5/3413 , H01S5/3418 , H01S5/3425
摘要： Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.
摘要翻译：提供了激光器件的半导体结构。半导体结构具有包括电子注入器，有源区和电子提取器的量子级联激光器结构。活性区域包括注入阻挡层，多量子阱结构和出口屏障。多量子阱结构可以包括第一势垒，第一量子阱，第二势垒，第二量子阱和第三势垒。第一和第二屏障的能量小于第三屏障的能量。第二阻挡层的能量与第三阻挡层的能量之间的能量差可以大于150meV，并且第三阻挡层的能量与第二阻挡层的能量的比率可以大于1.26。

2. 发明申请

US20140037258A1 FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED SEMICONDUCTOR STRUCTURES 有权
标题翻译：低损耗，轻微波动，方位图形半导体结构的制造
公开(公告)号：US20140037258A1
公开(公告)日：2014-02-06
申请号：US13562560
申请日：2012-07-31
申请人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
发明人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
IPC分类号： C30B25/04 , G02B6/10
CPC分类号： G02B6/122 , C30B25/04 , C30B29/403 , C30B29/42 , C30B29/44 , G02B2006/12035 , G02B2006/12097
摘要： Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.
摘要翻译：提供了制造取向图案化半导体结构的方法。该结构是用于非线性频率转换的光波导结构。这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。制造取向图案化结构的方法利用在异质结构生长过程的中间阶段的一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

3. 发明授权

US08259767B2 High-power quantum cascade lasers with active-photonic-crystal structure 有权
标题翻译：具有有源光子晶体结构的大功率量子级联激光器
公开(公告)号：US08259767B2
公开(公告)日：2012-09-04
申请号：US12639178
申请日：2009-12-16
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S3/04 , H01S5/00 , H01L21/00 , H01L21/76
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02461 , H01S5/2224 , H01S5/3213 , H01S5/4031 , H01S5/4081
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.
摘要翻译：提供能够发射中长波长红外（即4-12μm）辐射的半导体激光阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的横向间隔的沟槽区域，横向延伸通过光学限制和包层结构，并且部分地延伸到QCL结构中。每个沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定了多个横向间隔开的元件由激光阵列器件中的元件区域分开的区域。

4. 发明申请

US20120201263A1 HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE 有权
标题翻译：具有活性光子晶体结构的大功率量子级激光器
公开(公告)号：US20120201263A1
公开(公告)日：2012-08-09
申请号：US12639178
申请日：2009-12-16
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S5/34 , H01L33/06
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02461 , H01S5/2224 , H01S5/3213 , H01S5/4031 , H01S5/4081
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.
摘要翻译：提供能够发射中长波长红外线（即4-12μm）辐射的半导体激光器阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的横向间隔的沟槽区域，横向延伸通过光学限制和包层结构，并且部分地延伸到QCL结构中。每个沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定了多个横向间隔开的元件由激光阵列器件中的元件区域分开的区域。

5. 发明申请

US20090022196A1 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 有权
标题翻译：高效率的半导体激光器
公开(公告)号：US20090022196A1
公开(公告)日：2009-01-22
申请号：US12140414
申请日：2008-06-17
申请人： Dan Botez , Dapeng P. Xu , Luke J. Mawst
发明人： Dan Botez , Dapeng P. Xu , Luke J. Mawst
IPC分类号： H01S5/343 , H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

6. 发明授权

US5727013A Single lobe surface emitting complex coupled distributed feedback semiconductor laser 失效
标题翻译：单波瓣表面发射复耦合分布反馈半导体激光器
公开(公告)号：US5727013A
公开(公告)日：1998-03-10
申请号：US549404
申请日：1995-10-27
申请人： Dan Botez , Masoud J. Kasraian
发明人： Dan Botez , Masoud J. Kasraian
IPC分类号： H01S5/12 , H01S5/187 , H01S5/40 , H01S5/42 , H01S3/08 , H01S3/19
CPC分类号： H01S5/1228 , H01S5/187 , H01S5/42 , H01S5/4068
摘要： A high power monolithic surface emitting semiconductor laser provides a single lobe far-field radiation profile which is emitted normal to the plane of a surface of the semiconductor laser structure. The semiconductor laser includes an active region layer at which light is emitted and a complex-coupled distributed feedback grating positioned to act upon light from the active region. The adjacent elements of the distributed feedback grating differ from one another in both refractive index and gain/loss. The grating period, or the combined width of the two adjacent grating elements, is selected to be equal to a full wavelength in the semiconductor structure of the light emitted from the active region. Lasing occurs in a symmetric mode, resulting in emission of light from a planar surface of the semiconductor structure perpendicular to the surface, the grating layer and the active region layer as long as the modal-gain difference between symmetric and antisymmetric modes due to optical-field overlap with the gain/loss grating overcomes the modal-gain difference based on radiation losses.
摘要翻译：高功率单片面发射半导体激光器提供垂直于半导体激光器结构的表面的平面发射的单波瓣远场辐射轮廓。半导体激光器包括发射光的有源区域层和被定位成对来自有源区域的光作用的复耦合分布式反馈光栅。分布式反馈光栅的相邻元件在折射率和增益/损耗方面彼此不同。光栅周期或两个相邻光栅元件的组合宽度被选择为等于从有源区发射的光的半导体结构中的全波长。激光发生在对称模式，导致从垂直于表面，光栅层和有源区域层的半导体结构的平面表面发射的光，只要由于光学元件的对称和反对称模式之间的模态增益差异，与增益/损耗光栅的场重叠克服了基于辐射损耗的模态增益差异。

7. 发明授权

US5063570A Semiconductor laser arrays using leaky wave interarray coupling 失效
标题翻译：半导体激光阵列使用漏波阵列耦合
公开(公告)号：US5063570A
公开(公告)日：1991-11-05
申请号：US604315
申请日：1990-10-29
申请人： Dan Botez , Luke J. Mawst , Gary L. Peterson
发明人： Dan Botez , Luke J. Mawst , Gary L. Peterson
IPC分类号： H01S5/40
CPC分类号： H01S5/4031
摘要： A semiconductor laser array of antiguides having a large number of antiguide elements to provide relatively high optical power output with a high degree of coherence and array mode discrimination. The antiguide elements are grouped into array cells that are separated by interarray regions having a width and refractive index selected to produce a resonance condition in the 0.degree.-phase-shift array mode. Each array cell is also designed to operate in the resonant condition, and losses in the interarray regions discriminate against modes other than the 0.degree.-phase-shift mode. The entire group of cells operates as a high-power, coherent ensemble, without the degradation of mode discrimination and beam quality usually associated with large numbers of waveguide elements.
摘要翻译：一种具有大量抗划线元件的防划离元件的半导体激光器阵列，以提供相对较高的光功率输出，具有高度的相干性和阵列模式鉴别。反射元件被分组成阵列单元，该阵列单元被选择为具有0° - 移相阵列模式的谐振条件的宽度和折射率的区域间隔开。每个阵列单元还被设计为在谐振条件下工作，并且在阵列区域中的损耗区别于0° - 相移模式以外的模式。整个单元组作为大功率相干集合而工作，而不会降低通常与大量波导元件相关的模式识别和光束质量。

8. 发明授权

US4852113A Laser array with wide-waveguide coupling region 失效
标题翻译：激光阵列与宽波导耦合区域
公开(公告)号：US4852113A
公开(公告)日：1989-07-25
申请号：US921648
申请日：1986-10-21
申请人： Dan Botez
发明人： Dan Botez
IPC分类号： H01S5/40
CPC分类号： H01S5/4068
摘要： A semiconductor laser array that discriminates in favor of a fundamental array mode of oscillation and provides a far-field radiation pattern that is single lobed and diffraction-limited. The array includes a first set of parallel waveguides, a wide-waveguide section and a second set of parallel waveguides. Oscillation in the fundamental or 0.degree.-phase-shift array mode is easily coupled from the first set of waveguides to the wide-waveguide section, and from the wide-waveguide section to the second set of waveguides. When adjacent waveguides oscillate out of phase, as in the 180.degree.-phase-shift array mode, easy coupling is not obtained because the waveguides of the second set are not colinear with those of the first set. The structure of the invention also avoids the large radiation losses inherent in Y-junction arrays.
摘要翻译：一种半导体激光器阵列，其有利于基本阵列振荡模式，并提供单凸起和衍射限制的远场辐射图。阵列包括第一组平行波导，宽波导部分和第二组平行波导。在基波或0°移相阵列模式中的振荡容易地从第一组波导耦合到宽波导部分，并且从宽波导部分耦合到第二组波导。当相邻的波导与180度相移阵列模式相异振荡时，由于第二组的波导与第一组波导不共线，所以不能获得容易的耦合。本发明的结构也避免了Y形结阵列固有的大的辐射损耗。

9. 发明授权

US4642143A Method of making a double heterostructure laser 失效
标题翻译：制造双异质结激光的方法
公开(公告)号：US4642143A
公开(公告)日：1987-02-10
申请号：US771357
申请日：1985-08-30
申请人： John C. Connolly , Dan Botez
发明人： John C. Connolly , Dan Botez
IPC分类号： H01S5/223 , H01L21/208
CPC分类号： H01S5/2232 , H01S5/2234 , H01S5/2237 , Y10S438/978
摘要： A semiconductor laser comprising a substrate having a plurality of closely spaced channels in the surface thereof with mesas separating the channels to form a channelled region in the surface of the substrate. A first cladding layer overlies the surface of the substrate and the channels and has a surface layer over the channelled region which is not coplanar with the surface of this layer over the surrounding substrate. A cavity region comprising a guide layer and an active layer overlies the first cladding layer and a second cladding layer overlies the active layer. The active layer and guide layer taper in thickness in the lateral direction. The invention also includes a method of fabricating this laser which includes the steps of forming a plurality of corrugations in the surface of the substrate, forming a solution having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces, contacting the corrugated surface to the solution thereby partially melting the convex portions of the corrugations and forming mesas therebetween. Growth over the corrugations is delayed thereby providing a planar surface of the first layer over a central portion of the channelled region which is non-planar with respect to the surface of the layer over the remainder of the substrate. The trough thus formed by the delayed growth over the channelled region provides a curved surface upon which the remaining layers of the laser are then sequentially deposited.
摘要翻译：一种半导体激光器，包括在其表面上具有多个紧密间隔的通道的基板，其中台面分隔通道以在基板的表面中形成通道区域。第一包覆层覆盖衬底的表面和通道，并且在通道区域上具有与该层的表面在周围衬底上不共面的表面层。包括引导层和有源层的空腔区域覆盖在第一覆层上，第二覆层覆盖有源层。有源层和导向层在横向方向上的厚度逐渐变细。本发明还包括一种制造该激光器的方法，该方法包括以下步骤：在衬底的表面形成多个波纹，形成具有用于平面和凹面的超饱和生长条件的溶液和用于凸面，使波纹表面与溶液接触，从而部分地熔化波纹的凸部并在其间形成台面。波纹上的生长被延迟，从而在通道区域的中心部分上提供第一层的平坦表面，该平坦表面在衬底的其余部分上相对于层的表面是非平面的。通过在通道区域上的延迟生长形成的槽提供弯曲表面，然后依次沉积激光器的剩余层。

10. 发明授权

US4569054A Double heterostructure laser 失效
标题翻译：双异质结激光
公开(公告)号：US4569054A
公开(公告)日：1986-02-04
申请号：US505485
申请日：1983-06-17
申请人： John C. Connolly , Dan Botez
发明人： John C. Connolly , Dan Botez
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234 , H01S5/2237
摘要： A semiconductor laser comprising a substrate having a plurality of closely spaced channels in the surface thereof with mesas separating the channels to form a channelled region in the surface of the substrate. A first cladding layer overlies the surface of the substrate and the channels and has a surface layer over the channelled region which is not coplanar with the surface of this layer over the surrounding substrate. A cavity region comprising a guide layer and an active layer overlies the first cladding layer and a second cladding layer overlies the active layer. The active layer and guide layer taper in thickness in the lateral direction. The invention also includes a method of fabricating this laser which includes the steps of forming a plurality of corrugations in the surface of the substrate, forming a solution having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces, contacting the corrugated surface to the solution thereby partially melting the convex portions of the corrugations and forming mesas therebetween. Growth over the corrugations is delayed thereby providing a planar surface of the first layer over a central portion of the channelled region which is non-planar with respect to the surface of the layer over the remainder of the substrate. The trough thus formed by the delayed growth over the channelled region provides a curved surface upon which the remaining layers of the laser are then sequentially deposited.
摘要翻译：一种半导体激光器，包括在其表面上具有多个紧密间隔的通道的基板，其中台面分隔通道以在基板的表面中形成通道区域。第一包覆层覆盖衬底的表面和通道，并且在通道区域上具有与该层的表面在周围衬底上不共面的表面层。包括引导层和有源层的空腔区域覆盖在第一覆层上，第二覆层覆盖有源层。有源层和导向层在横向方向上的厚度逐渐变细。本发明还包括一种制造该激光器的方法，该方法包括以下步骤：在衬底的表面形成多个波纹，形成具有用于平面和凹面的超饱和生长条件的溶液和用于凸面，使波纹表面与溶液接触，从而部分地熔化波纹的凸部并在其间形成台面。波纹上的生长被延迟，从而在通道区域的中心部分上提供第一层的平坦表面，该平坦表面在衬底的其余部分上相对于层的表面是非平面的。通过在通道区域上的延迟生长形成的槽提供弯曲表面，然后依次沉积激光器的剩余层。

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