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1. 发明授权

US5272711A High-power semiconductor laser diode 失效
标题翻译：大功率半导体激光二极管
公开(公告)号：US5272711A
公开(公告)日：1993-12-21
申请号：US882336
申请日：1992-05-12
申请人： Luke J. Mawst , Dan Botez , Charles A. Zmudzinski
发明人： Luke J. Mawst , Dan Botez , Charles A. Zmudzinski
IPC分类号： H01S5/20 , H01S5/34 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/20 , H01S2301/18 , H01S5/3421 , H01S5/3432 , H01S5/4031
摘要： A high-power semiconductor laser diode that employs a lateral antiresonant reflecting optical waveguide for generating a single-mode laser beam having an aperture spot size on the order of 4 to 8 microns. The lateral antiresonant reflecting optical waveguide is a negative-index waveguide or antiguide that operates in an antiresonance condition for the fundamental lateral mode, but not for the higher-order lateral modes. Consequently, the fundamental lateral mode is reflected by the lateral waveguide while the higher-order lateral modes are allowed to leak out. This provides strong discrimination between the fundamental lateral mode and the higher-order lateral modes in order to generate a single-mode laser beam having a large aperture spot size. The lateral waveguide also provides good lateral mode stability due to the large negative step in the waveguide index of refraction.
摘要翻译：一种大功率半导体激光二极管，其使用横向反谐振反射光波导来产生具有4至8微米量级的光阑光斑尺寸的单模激光束。横向反谐振反射光波导是负基准波导或反射波导，其在基本横向模式的反共振条件下操作，但不适用于高阶侧向模式。因此，基本横向模式被横向波导反射，而高阶侧向模式被允许泄漏。这提供了基本横向模式和高阶横向模式之间的强烈区分，以便产生具有大孔径光斑尺寸的单模激光束。横向波导也由于波导折射率的较大的负梯度而提供良好的横向模式稳定性。

2. 发明授权

US5606570A High power antiguided semiconductor laser with interelement loss 失效
标题翻译：具有元件损耗的高功率防护半导体激光器
公开(公告)号：US5606570A
公开(公告)日：1997-02-25
申请号：US435598
申请日：1995-05-08
申请人： Dan Botez , Charles A. Zmudzinski , Luke J. Mawst
发明人： Dan Botez , Charles A. Zmudzinski , Luke J. Mawst
IPC分类号： H01S5/20 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4031 , H01S5/20
摘要： A semiconductor laser is formed with an array of a small number (two to ten) antiguide elements each containing a portion of the active region of the semiconductor laser. Interelement structures between the antiguide elements are formed to have a relatively high interelement loss coefficient (at least 100 cm.sup.-1), providing excellent discrimination between the resonant in-phase mode and the unwanted nonresonant modes. Lateral reflectors may be utilized at the edge of the array to reflect light back to the array, but are not necessary when the antiguide elements are sufficiently wide and the effective index step between the antiguide elements and interelement structures is sufficiently large. Because only a relatively small number (10 or less) of antiguide elements are utilized, fabrication tolerances are relatively large and practical devices may be produced with satisfactory yields. The semiconductor laser of the invention may be utilized as a master oscillator integrated with flared antiguided master-oscillator power-amplifiers (MOPA) to provide uniform MOPA near-field intensity profiles at high power levels.
摘要翻译：形成半导体激光器，其具有每个包含半导体激光器的有源区域的一部分的少数（2至10个）防护元件的阵列。防反射元件之间的入射结构形成为具有相对高的元件损耗系数（至少100cm -1），提供谐振同相模式和不需要的非谐振模式之间的优异辨别。可以在阵列的边缘处利用侧向反射器将光反射回阵列，但是当防御元件足够宽并且防护元件和元件结构之间的有效折射率步骤足够大时，这些反射器不是必需的。由于仅使用少量（10个或更少）的防护元件，所以制造公差相对较大，并且可以以令人满意的产量生产实用的装置。本发明的半导体激光器可以用作与扩展的防御主振荡器功率放大器（MOPA）集成的主振荡器，以在高功率电平下提供均匀的MOPA近场强度分布。

3. 发明授权

US6088500A Expanded mode wave guide semiconductor modulation 失效
标题翻译：扩展模式波导半导体调制
公开(公告)号：US6088500A
公开(公告)日：2000-07-11
申请号：US826989
申请日：1997-04-11
申请人： Charles A. Zmudzinski , Doyle T. Nichols
发明人： Charles A. Zmudzinski , Doyle T. Nichols
IPC分类号： G02B6/122 , G02F1/015 , G02F1/017 , G02F1/025 , H04B10/04 , H04B10/06 , H04B10/142 , H04B10/152 , G02B6/10 , G02F1/03
CPC分类号： B82Y20/00 , G02F1/01708 , G02F2001/0157
摘要： An electroabsorptive modulator (EAM) for providing RF modulation of optical inputs signals. The EAM is formed as a semiconductor waveguide on a semiconductor substrate with an optical input port and an optical output port and electrical contacts for connection to the RF input. The configuration of the waveguide portion of the EAM is optimized to provide a modal match with the particular optical device to which the EAM is to be connected, for example, an optical fiber. By optimizing the modal match between the EAM and the optical device to which the EAM is connected, the optical insertion losses are minimized thereby improving the overall performance of the optical system. The device is formed from a plurality of quantum wells selected to compensate for the increased mode field dimensions.
摘要翻译：一种用于提供光输入信号的RF调制的电吸收调制器（EAM）。 EAM形成为具有光输入端口和光输出端口的半导体衬底上的半导体波导和用于连接到RF输入的电触点。 EAM的波导部分的配置被优化以提供与要连接EAM的特定光学装置（例如光纤）的模式匹配。通过优化EAM与EAM连接的光学装置之间的模态匹配，光插入损耗最小化，从而提高光学系统的整体性能。该器件由多个选择用于补偿增加的模场尺寸的量子阱形成。

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