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41. 发明授权

US06583454B2 Nitride based transistors on semi-insulating silicon carbide substrates 有权
公开(公告)号：US06583454B2
公开(公告)日：2003-06-24
申请号：US09821360
申请日：2001-03-29
申请人： Scott Thomas Sheppard , Scott Thomas Allen , John Williams Palmour
发明人： Scott Thomas Sheppard , Scott Thomas Allen , John Williams Palmour
IPC分类号： H01L310328
CPC分类号： H01L29/1608 , H01L29/2003 , H01L29/267 , H01L29/452 , H01L29/7783 , H01L29/7787
摘要： A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.

42. 发明授权

US06583437B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06583437B2
公开(公告)日：2003-06-24
申请号：US09810607
申请日：2001-03-19
申请人： Tomohisa Mizuno , Naoharu Sugiyama , Shinichi Takagi
发明人： Tomohisa Mizuno , Naoharu Sugiyama , Shinichi Takagi
IPC分类号： H01L310328
CPC分类号： H01L21/76243 , H01L21/26533 , H01L29/1054 , H01L29/78687 , Y10S438/933 , Y10S438/938
摘要： A method of manufacturing a semiconductor device which includes forming a first SiGe layer having a low content of Ge, forming an oxide layer by implanting oxygen ions into the first SiGe layer, and then annealing the first SiGe layer. The method also includes forming, on the first SiGe layer, a second SiGe layer which has a higher content of Ge than the first SiGe layer, forming a strained Si layer on the second SiGe layer, and forming a field effect transistor in which the strained Si layer is used a channel region. Further, a field effect transistor may be formed on a semiconductor substrate having an indefectible, high-quality, buried oxide layer and a largely strained Si layer, and hence a high-speed, low-power-consumption semiconductor device can be realized.
摘要翻译：一种制造半导体器件的方法，包括：通过将氧离子注入到第一SiGe层中形成具有低Ge含量的第一SiGe层，形成氧化层，然后退火第一SiGe层。该方法还包括在第一SiGe层上形成第二SiGe层，其具有比第一SiGe层更高的Ge含量，在第二SiGe层上形成应变Si层，并形成其中应变的场效晶体管 Si层用于沟道区。此外，可以在具有不可缺的，高质量的掩埋氧化物层和大的应变Si层的半导体衬底上形成场效应晶体管，因此可以实现高速，低功耗的半导体器件。

43. 发明授权

US06573528B2 Detector diode with internal calibration structure 失效
公开(公告)号：US06573528B2
公开(公告)日：2003-06-03
申请号：US09976907
申请日：2001-10-12
申请人： Walter David Braddock
发明人： Walter David Braddock
IPC分类号： H01L310328
CPC分类号： H01L29/882 , H01L29/155
摘要： This patent is generally directed towards a method and device for providing a diode structure that has a barrier height that may be readily engineered with a series resistance that may be independently varied while simultaneously providing for the complete characterization and discernment of the barrier height in a microwave and millimeter-wave rectifying diode without the need for device fabrication and electrical measurement. The present invention generally relates to microwave and millimeterwave diodes, and more particularly to low barrier structures within these diodes that are capable of rectification of microwave and millimeterwave radiation. The diode structure comprises a semiconductor substrate, a verification structure consisting of alternating layers of binary compound semiconductors that exist in crystalline form on said substrate, a doped contact layer with sufficient doping and thickness to provide for the formation of electrical contact with ohmic behavior, a barrier structure consisting of some combination of multiple heterojunctions and alternating layers that may be periodic in nature or of a chirped superlattice nature in said barrier, and a doped contact layer that is of the proper thickness and doping to allow the formation of a sufficient electrical contact with ohmic or partly resistive nature as necessary for the required contact.

44. 发明授权

US06570194B2 Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same 失效
标题翻译：具有改善的欧姆接触层结构的复合半导体场效应晶体管及其形成方法
公开(公告)号：US06570194B2
公开(公告)日：2003-05-27
申请号：US09793656
申请日：2001-02-27
申请人： Takehiko Kato , Naotaka Iwata
发明人： Takehiko Kato , Naotaka Iwata
IPC分类号： H01L310328
CPC分类号： H01L29/452 , H01L29/4175 , H01L29/7785
摘要： The present invention provides a structure of a semiconductor device, the structure comprising: a compound semiconductor multi-layer structure having at least a channel region; and at least an ohmic contact layer provided adjacent to a first side face of the multi-layer structure, and the ohmic contact layer being in contact with at least a part of the first side face, wherein the ohmic contact layer has a top extending portion which extends in contact with a part of a top surface of the multi-layer structure.
摘要翻译：本发明提供一种半导体器件的结构，该结构包括：至少具有沟道区的化合物半导体多层结构; 以及至少与所述多层结构的第一侧面相邻设置的欧姆接触层，所述欧姆接触层与所述第一侧面的至少一部分接触，其中所述欧姆接触层具有顶部延伸部分其与多层结构的顶表面的一部分延伸接触。

45. 发明授权

US06525348B1 Two terminal edge illuminated epilayer waveguide phototransistor 失效
标题翻译：两个端边照明外延波导光电晶体管
公开(公告)号：US06525348B1
公开(公告)日：2003-02-25
申请号：US09907318
申请日：2001-07-17
申请人： David C. Scott , Timothy A. Vang , Srinath Kalluri
发明人： David C. Scott , Timothy A. Vang , Srinath Kalluri
IPC分类号： H01L310328
CPC分类号： H01L31/1105 , H01L31/03046 , Y02E10/544
摘要： An edge illuminated epilayer waveguide phototransistor including a subcollector layer formed from an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown on the subcollector layer. A base region of moderately doped InGaAs is epitaxially grown on the collector layer. An emitter region, including a doped InGaAsP layer, a doped InP layer, and a heavily doped InGaAs emitter contact layer, is epitaxially grown on the base layer. The various layers and regions are formed so as to define an edge-illuminated facet for receiving incident light. Also, the base does not have an ohmic contact so that the base thickness can be minimized. Finally, the base doping concentration is minimized so that the gain-bandwidth product can be maximized.
摘要翻译：包括由外延生长的四元半导体材料（例如重掺杂的InGaAsP）形成的子集电极层的边缘照明外延波导光电晶体管。未掺杂的InGaAs的集电极区域在子集电极层上外延生长。中等掺杂的InGaAs的基极区域在集电极层上外延生长。在基极层上外延生长包括掺杂的InGaAsP层，掺杂的InP层和重掺杂的InGaAs发射极接触层的发射极区域。形成各种层和区域以限定用于接收入射光的边缘照明面。此外，基座不具有欧姆接触，使得基底厚度可以最小化。最后，使基极掺杂浓度最小化，使得增益带宽乘积可以最大化。

46. 发明授权

US06509586B2 Semiconductor device, method for fabricating the semiconductor device and semiconductor integrated circuit 失效
公开(公告)号：US06509586B2
公开(公告)日：2003-01-21
申请号：US09794012
申请日：2001-02-28
申请人： Yuji Awano
发明人： Yuji Awano
IPC分类号： H01L310328
CPC分类号： H01L29/66772 , H01L21/84 , H01L27/1203 , H01L29/78618 , H01L29/78639 , H01L29/78642 , H01L29/78645 , H01L29/78648 , H01L29/78684
摘要： A semiconductor device comprises: a channel region 14 of silicon, a source region 26 and a drain region 26 respectively forming junction with the channel region 14, and a gate electrode 30 formed on the channel region 14 interposing an insulation film 16 therebetween, either of the source region 26 and the drain region 26 being formed of SiGeC, which lattice-matches with silicon. Whereby parasitic resistance between the source region and the drain region can be much decreased.

47. 发明授权

US06489639B1 High electron mobility transistor 有权
标题翻译：高电子迁移率晶体管
公开(公告)号：US06489639B1
公开(公告)日：2002-12-03
申请号：US09577508
申请日：2000-05-24
申请人： William E. Hoke , Peter J. Lemonias , Theodore D. Kennedy
发明人： William E. Hoke , Peter J. Lemonias , Theodore D. Kennedy
IPC分类号： H01L310328
CPC分类号： H01L29/66462 , H01L21/28587 , H01L29/205 , H01L29/7785
摘要： A semiconductor structure, e.g., a high electron mobility transistor structure, is formed by using metamorphic growth and strain compensation. The structure includes a substrate, a graded layer over the substrate, a first donor/barrier layer over the graded layer, and a channel layer over the first donor/barrier layer. The substrate has a substrate lattice constant, and the graded layer has a graded lattice constant. The graded layer has a first lattice constant near a bottom of the graded layer substantially equal to the substrate lattice constant and a second lattice constant near a top of the graded layer different than the first lattice constant. The first donor/barrier layer has a third lattice constant, and the channel layer has a fourth lattice constant. The second lattice constant is intermediate the third and fourth lattice constants.
摘要翻译：通过使用变质生长和应变补偿形成半导体结构，例如高电子迁移率晶体管结构。该结构包括衬底，衬底上的渐变层，梯度层上的第一施主/势垒层，以及在第一施主/阻挡层上的沟道层。衬底具有衬底晶格常数，并且渐变层具有梯度晶格常数。渐变层在梯度层的底部附近具有基本上等于衬底晶格常数的第一晶格常数，并且在渐变层的顶部附近的第二晶格常数不同于第一晶格常数。第一施主/势垒层具有第三晶格常数，沟道层具有第四晶格常数。第二晶格常数在第三和第四晶格常数之间。

48. 发明授权

US06423990B1 Vertical heterojunction bipolar transistor 失效
标题翻译：垂直异质结双极晶体管
公开(公告)号：US06423990B1
公开(公告)日：2002-07-23
申请号：US09441576
申请日：1999-11-17
申请人： El-Badawy Amien El-Sharawy , Majid M. Hashemi
发明人： El-Badawy Amien El-Sharawy , Majid M. Hashemi
IPC分类号： H01L310328
CPC分类号： H01L29/66863 , H01L29/1004 , H01L29/267 , H01L29/66242 , H01L29/7371 , H01L29/7378
摘要： A heterojunction bipolar transistor (20, 60) is provided with a silicon (Si) base region (34, 74) that forms a semiconductor junction with a multilayer emitter (38) having a thin gallium arsenide (GaAs) emitter layer (36, 72) proximate the base region (34, 74) and a distal gallium phosphide (GaP) emitter layer (40, 66). The GaAs emitter layer (36, 72) is sufficiently thin, preferably less than 200 Å, so as to be coherently strained. In one embodiment, the GaP emitter layer includes a doped region (70) which serves as the emitter and a non-doped region (68) on which the intrinsic portion of the transistor (60) is formed.
摘要翻译：异质结双极晶体管（20,60）设置有与具有薄砷化镓（GaAs）发射极层（36,72）的多层发射极（38）形成半导体结的硅（Si）基区（34,74））接近所述基极区（34,74）和远端磷化镓（GaP）发射极层（40,66）。 GaAs发射极层（36,72）足够薄，优选小于200，以使其相干应变。在一个实施例中，GaP发射极层包括用作发射极的掺杂区域（70）和形成晶体管（60）本征部分的非掺杂区域（68）。

49. 发明授权

US06350999B1 Electron-emitting device 失效
标题翻译：电子发射器件
公开(公告)号：US06350999B1
公开(公告)日：2002-02-26
申请号：US09449525
申请日：1999-11-29
申请人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
发明人： Takeshi Uenoyama , Takao Tohda , Masahiro Deguchi , Makoto Kitabatake , Kentaro Setsune
IPC分类号： H01L310328
CPC分类号： H01J1/308
摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.
摘要翻译：在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。由此获得优异的电子发射特性。

50. 发明授权

US06337494B1 Super self-aligned bipolar transistor and method for fabricating thereof 失效
标题翻译：超自对准双极晶体管及其制造方法
公开(公告)号：US06337494B1
公开(公告)日：2002-01-08
申请号：US09137709
申请日：1998-08-21
申请人： Byung Ryul Ryum , Deok Ho Cho , Tae Hyeon Han , Soo Min Lee
发明人： Byung Ryul Ryum , Deok Ho Cho , Tae Hyeon Han , Soo Min Lee
IPC分类号： H01L310328
CPC分类号： H01L29/1602 , H01L29/16 , H01L29/66242 , H01L29/66287 , H01L29/732 , H01L29/7378
摘要： Disclosed is a super self-aligned heterojunction bipolar transistor which is capable of miniaturizing an element, simplifying the process step thereof without using a trench isolation process and a sophisticated selective epitaxial growth (SEG) processes. According to this invention, the sophisticated isolation and the SEG techniques are derived by using simple and popular processes. The base layer has multi-layer structure being made of a Si, an undoped SiGe, a SiGe doped a p-type impurity in-situ and Si. Also, the selective epitaxial growth is not required. Thus, it can be less prone to a flow of leakage current or an emitter-base-collector short effect.
摘要翻译：公开了能够使元件小型化的超自对准异质结双极晶体管，简化了其工艺步骤，而不使用沟槽隔离工艺和复杂的选择性外延生长（SEG）工艺。根据本发明，通过使用简单和流行的方法得到复杂的隔离和SEG技术。基层具有由Si，未掺杂的SiGe，SiGe原位掺杂p型杂质的Si和Si构成的多层结构。此外，不需要选择性外延生长。因此，可能不太容易发生漏电流或发射极 - 基极 - 集电极短路效应。

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