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41. 发明授权

US08191515B2 V-type internal combustion engine including throttle valve device, and vehicle incorporating same 有权
标题翻译： V型内燃机，包括节流阀装置，以及包含其的车辆
公开(公告)号：US08191515B2
公开(公告)日：2012-06-05
申请号：US12386555
申请日：2009-04-20
申请人： Masahiro Kontani , Takashi Yokoyama
发明人： Masahiro Kontani , Takashi Yokoyama
IPC分类号： F02B75/22
CPC分类号： F02B75/22 , F01L1/182 , F01L1/20 , F01L2001/0535 , F02B61/02 , F02M35/10032 , F02M35/10216 , F02M35/116 , F02M35/162 , F02M61/145
摘要： A V-type internal combustion engine includes a crankcase, a crankshaft disposed in the crankcase, and first and second banks operatively attached to the crankcase. The engine also includes a throttle body, an electric motor and a force-transmitting device arranged between the first and second banks. The force-transmitting device is disposed adjacent the front bank with respect to the throttle body. The force-transmitting device is disposed on a non-transmitting portion side opposite to a side where a timing mechanism is located with respect to a branch pipe of an intake air routing pipe, which supplies intake air into a cylinder adjacent to the timing mechanism of the first bank. An electric motor for operating the throttle valve is provided in the throttle body, and fuel injection valves are arranged between the banks.
摘要翻译： V型内燃机包括曲轴箱，设置在曲轴箱中的曲轴，以及可操作地附接到曲轴箱的第一和第二组。发动机还包括节气门体，电动机和布置在第一和第二组之间的力传递装置。力传递装置相对于节气门体相对于前排设置。力传递装置设置在相对于进气导管的分支管相对于正时机构的一侧的非透射部侧侧，该进气导入管将吸入空气供给到邻近定时机构第一家银行在节气门体上设置有用于操作节气门的电动机，并且燃料喷射阀布置在气缸之间。

42. 发明授权

US08033270B2 Fuel distribution apparatus for a V-type engine 有权
标题翻译：用于V型发动机的燃油分配装置
公开(公告)号：US08033270B2
公开(公告)日：2011-10-11
申请号：US12392402
申请日：2009-02-25
申请人： Naoto Yamagishi , Takashi Yokoyama
发明人： Naoto Yamagishi , Takashi Yokoyama
IPC分类号： F02M55/02 , F02M55/00
CPC分类号： F02B75/22 , F02M37/007
摘要： A fuel distribution apparatus for a V-type engine wherein first and second throttle bodies connected to first and second banks disposed in a V shape, respectively, are disposed therebetween and a main fuel distribution pipe for distributing fuel from a common fuel supply system is connected to first and second fuel injection valves provided in the first and second throttle bodies, respectively, is configured such that the fuel distribution pipe is formed from first and second distribution pipes separate from each other and connected to the first and second fuel injection valves and besides fastened to the first and second throttle bodies, respectively, a joint pipe connects the fuel supply to the first or second distribution pipes. Communication conduit connects the first and second distribution pipes.
摘要翻译：一种用于V型发动机的燃料分配装置，其中分别设置有连接到V形状的第一和第二排的第一和第二节流体，并且连接用于从公共燃料供应系统分配燃料的主燃料分配管设置在第一和第二节流体中的第一和第二燃料喷射阀分别被构造成使得燃料分配管由彼此分离并连接到第一和第二燃料喷射阀的第一和第二分配管形成，此外分别固定在第一和第二节流体上，连接管将燃料供给部与第一或第二分配管连接起来。通信管道连接第一和第二分配管道。

43. 发明申请

US20110089433A1 METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE AND NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTAL SIC SUBSTRATE 有权
标题翻译：制造氮化合物半导体衬底和氮化物半导体衬底的方法以及制造单晶SIC衬底和单晶SIC衬底的方法
公开(公告)号：US20110089433A1
公开(公告)日：2011-04-21
申请号：US12997013
申请日：2009-06-09
申请人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
发明人： Keisuke Kawamura , Katsutoshi Izumi , Hidetoshi Asamura , Takashi Yokoyama
IPC分类号： H01L29/24 , C30B25/02 , C30B25/10 , C30B29/06 , C30B29/36
CPC分类号： H01L21/8258 , C30B25/02 , C30B29/36 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/0254 , H01L21/02614 , H01L21/8213
摘要： In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate 1 having a surface Si layer 3 of a predetermined thickness and an embedded insulating layer 4 is prepared, and when the Si substrate 1 is heated in a carbon-series gas atmosphere to convert the surface Si layer 3 into a single crystal SiC layer 6, surface Si layer 3 into a single crystal SIC layer 6, the Si layer in the vicinity of an interface 8 with the embedded insulating layer 4 is left as a residual Si layer 5.
摘要翻译：为了提供可以得到具有良好结晶性的SiC层的单晶SiC衬底的制造方法，制备具有预定厚度的表面Si层3和嵌入绝缘层4的Si衬底1，并且当Si 将基板1在碳系气体气氛中加热，将表面Si层3变为单晶SiC层6，将表面Si层3转换为单晶SIC层6，在界面8附近的Si层与留下绝缘层4作为残留Si层5。

44. 发明授权

US07733859B2 Apparatus and method for packet forwarding in layer 2 network 失效
标题翻译：第2层网络中数据包转发的装置和方法
公开(公告)号：US07733859B2
公开(公告)日：2010-06-08
申请号：US11751158
申请日：2007-05-21
申请人： Tadashi Takahashi , Hiroaki Miyata , Takashi Yokoyama , Masanori Kamata
发明人： Tadashi Takahashi , Hiroaki Miyata , Takashi Yokoyama , Masanori Kamata
IPC分类号： H04L12/28
CPC分类号： H04L12/4625 , H04L49/35 , H04L63/0236
摘要： A packet forwarding apparatus with a function of registering packet forwarding control information for each user terminal into a user management table during PPPoE connection and authentication phases in which the apparatus carries out predetermined communication procedures with each user terminal. During DHCP and IP forwarding phases following the authentication phase, the packet forwarding apparatus controls packet forwarding based on the user management table. Packets are forwarded in the form of PPPoE frame until the authentication phase is completed and packets are forwarded in the form of Ethernet frame in the DHCP and IP forwarding phases.
摘要翻译：一种分组转发装置，其功能是在每个用户终端执行预定的通信过程的PPPoE连接和认证阶段期间，将每个用户终端的分组转发控制信息注册到用户管理表中。在验证阶段之后的DHCP和IP转发阶段，报文转发装置根据用户管理表控制报文转发。分组以PPPoE帧的形式转发，直到认证阶段完成，并在DHCP和IP转发阶段以以太网帧的形式转发数据包。

45. 发明授权

US07691203B2 Film forming apparatus 有权
标题翻译：成膜装置
公开(公告)号：US07691203B2
公开(公告)日：2010-04-06
申请号：US11341093
申请日：2006-01-27
申请人： Toru Inagaki , Takahiro Shirahata , Takashi Yokoyama , Michihiro Sano , Naochika Horio
发明人： Toru Inagaki , Takahiro Shirahata , Takashi Yokoyama , Michihiro Sano , Naochika Horio
IPC分类号： C23C16/22 , H01L21/36 , C23C16/00
CPC分类号： C23C16/45514 , C23C16/4411 , C23C16/4412 , C23C16/45563 , C23C16/4584 , C30B25/14 , C30B29/16
摘要： A film forming apparatus is provided that can prevent source gases from reacting together before reaching the substrate being processed in the apparatus, minimize the influence of the radiation heat from the substrate, and make the gas behavior in the reaction chamber better for crystal film formation. The apparatus forms a film on a surface of a heated substrate 5 by causing a first source gas and a second source gas to react together. The apparatus has a processing chamber 1, in which the substrate 5 is placed. The processing chamber 1 is divided into a heating chamber 1a and a reaction chamber 1b by at least the substrate 5 so that the substrate surface can be exposed to the source gases in the reaction chamber 1b. The apparatus further has an exhaust duct 7, through which the exhaust gas can be discharged. The exhaust duct 7 faces the exposed substrate surface and connects with the reaction chamber 1b. The apparatus further has first supply ports 11 and second supply ports 12, through which the first and second source gases respectively can be supplied independently onto the substrate surface. The supply ports 11 and 12 are positioned outside the exhaust duct 7. This enables the source gases to react immediately near the substrate 5 so that high-quality crystal film formation can be performed on the substrate.
摘要翻译：提供了一种成膜装置，其可以在到达装置内被处理的基板之前防止源气体一起反应，从而最小化来自基板的辐射热的影响，并使反应室中的气体行为更好地用于晶体膜形成。该装置通过使第一源气体和第二源气体一起反应而在加热的基板5的表面上形成膜。该装置具有处理室1，其中放置有基板5。处理室1至少由基板5分成加热室1a和反应室1b，使得基板表面能够暴露于反应室1b中的源气体。该装置还具有排气管7，排气可以排出。排气管7面对暴露的基板表面并与反应室1b连接。该装置还具有第一供应端口11和第二供应端口12，第一和第二源气体可以分别通过第一供应端口11和第二供应端口12独立地供应到基板表面上。供给口11和12位于排气管7的外部。这使得源气体能够在基板5附近立即反应，从而可以在基板上进行高质量的晶体成膜。

46. 发明授权

US07532624B2 Multicast packet control apparatus 有权
标题翻译：组播包控制装置
公开(公告)号：US07532624B2
公开(公告)日：2009-05-12
申请号：US11508240
申请日：2006-08-23
申请人： Kozo Ikegami , Takashi Yokoyama , Minoru Nagai , Yoshitaka Sakamoto , Shigehiro Onizawa
发明人： Kozo Ikegami , Takashi Yokoyama , Minoru Nagai , Yoshitaka Sakamoto , Shigehiro Onizawa
IPC分类号： H04L12/28
CPC分类号： H04L12/1881
摘要： When multicast distribution is performed on a network where a point-to-point connection is made between user terminals and a multicast router, the multicast router is protected from load due to response reports, join requests, or leave statements sent from the user terminals simultaneously. If the user terminals send response reports simultaneously, a Layer 2 switch disposed between the user terminals and the multicast router limits response reports sent to the multicast router. The Layer 2 switch prevents response reports sent from the same user terminal from being discarded consecutively, by sending a response report sent from the same user terminal to the multicast router 200 with priority in the next join confirmation event. If the user terminals send join requests or leave statements simultaneously, the Layer 2 switch limits the join requests or leave statements sent to the multicast router 200 in the same manner. The Layer 2 switch further enlarges a transmission buffer thereof at the multicast router side, so that the packets can be stored in the buffer.
摘要翻译：当在用户终端和组播路由器之间进行点对点连接的网络上执行组播分发时，由于响应报告，加入请求或者从用户终端同时发送的离开语句，组播路由器受到保护而受到保护。如果用户终端同时发送响应报告，则设置在用户终端和组播路由器之间的二层交换机限制发送给组播路由器的响应报告。第二层交换机防止从同一用户终端发送的响应报告被连续丢弃，通过在下一个加入确认事件中以优先级的方式发送从同一用户终端发送到组播路由器200的响应报告。如果用户终端同时发送加入请求或离开语句，则二层交换机以相同的方式限制加入请求或发送到组播路由器200的语句。二层交换机进一步放大了组播路由器侧的发送缓冲区，使得分组可以存储在缓冲器中。

47. 发明申请

US20090108367A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090108367A1
公开(公告)日：2009-04-30
申请号：US12246210
申请日：2008-10-06
申请人： Takashi Yokoyama
发明人： Takashi Yokoyama
IPC分类号： H01L47/00 , H01L21/76
CPC分类号： H01L21/823807 , H01L27/0207 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device includes: an element isolation region configured to be formed in a semiconductor substrate; a P-type field effect transistor configured to be formed in a first element formation region of the semiconductor substrate for which isolation by the element isolation region is carried out; an N-type substrate region configured to be formed in the semiconductor substrate for which isolation by the element isolation region is carried out, arsenic being ion-implanted into the N-type substrate region; a nickel silicide layer configured to be formed on the N-type substrate region; a first insulating film configured to cover the P-type field effect transistor and have compressive stress; and a second insulating film configured to cover the N-type substrate region and have tensile stress or compressive stress lower than the compressive stress of the first insulating film.
摘要翻译：本发明提供一种半导体器件，包括：元件隔离区，被配置为形成在半导体衬底中; P型场效应晶体管被配置为形成在半导体衬底的由元件隔离区进行隔离的第一元件形成区域中; 构造成形成在半导体衬底中的由元件隔离区进行隔离的N型衬底区域，将砷离子注入到N型衬底区域中; 构造成形成在所述N型衬底区域上的硅化镍层; 配置为覆盖P型场效应晶体管并具有压应力的第一绝缘膜; 以及第二绝缘膜，其构造成覆盖所述N型基板区域，并且具有比所述第一绝缘膜的压缩应力低的拉伸应力或压缩应力。

48. 发明授权

US07408143B2 Previous amplifier circuit, light-receiving amplifier circuit, and optical pickup apparatus having grounded emitter amplifier circuits each with a grounded emitter transistor 失效
标题翻译：以前的放大器电路，光接收放大器电路和具有接地的发射极放大器电路的光拾取装置，每个发射极放大器电路都具有接地的发
公开(公告)号：US07408143B2
公开(公告)日：2008-08-05
申请号：US11710506
申请日：2007-02-26
申请人： Takashi Yokoyama
发明人： Takashi Yokoyama
IPC分类号： H01J40/14
CPC分类号： G11B7/131 , H03F3/08
摘要： A previous amplifier circuit of the present invention includes: a grounded emitter amplifier circuit using a grounded emitter transistor connected to a light receiving device; another grounded emitter amplifier circuit using another grounded emitter transistor connected to another light receiving device; and a grounded emitter changing switch to be switched in a manner such that an emitter of the grounded emitter transistors is grounded so as to cause only one of the grounded emitter amplifier circuits to operate. A light-receiving amplifier circuit includes the previous amplifier circuit. An optical pickup apparatus includes the light-receiving amplifier circuit.
摘要翻译：本发明的先前的放大器电路包括：使用连接到光接收装置的接地发射极晶体管的接地发射极放大器电路; 另一接地发射极放大器电路，使用另一接地发射极晶体管连接到另一光接收装置; 以及接地发射极改变开关，以使得接地的发射极晶体管的发射极接地，从而仅使一个接地的发射极放大器电路工作。光接收放大器电路包括先前的放大器电路。光拾取装置包括光接收放大器电路。

49. 发明申请

US20070240629A1 Method for manufacturing a silicon single crystal 审中-公开
标题翻译：硅单晶的制造方法
公开(公告)号：US20070240629A1
公开(公告)日：2007-10-18
申请号：US11783544
申请日：2007-04-10
申请人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
发明人： Toshirou Kotooka , Takashi Yokoyama , Kazuyoshi Sakatani , Toshiaki Saishoji , Koichi Shimomura , Ryota Suewaka
IPC分类号： C30B15/00 , C30B27/02
CPC分类号： C30B15/14 , C30B29/06
摘要： The present invention relates to a method for manufacturing a silicon single crystal by pulling up the silicon single crystal from a molten silicon by the CZ method, comprising: a cooling step of cooling the silicon single crystal by a cooler surrounding the silicon single crystal, and a heat shield body disposed surrounding an outer side and a lower side of the cooler while the silicon single crystal is being pulled up; and an Ms adjusting step of determining, in advance, an allowable range of a pulling speed at which a silicon single crystal having few crystal defects can be obtained by adjusting a distance (referred to “Ms”) from the lower surface of the heat shield body disposed on the lower side of the cooler to the surface of the molten silicon, wherein the silicon single crystal 11 is pulled up at a pulling speed within the allowable range thus determined.
摘要翻译：本发明涉及通过CZ法从熔融硅中提取硅单晶来制造单晶硅的方法，包括：冷却步骤，通过围绕硅单晶的冷却剂冷却硅单晶;以及隔热体，其在所述硅单晶被拉起的同时围绕所述冷却器的外侧和下侧设置; 以及Ms调整步骤，预先确定通过从隔热板的下表面调整距离（称为“Ms”），可以获得具有很少晶体缺陷的硅单晶的拉伸速度的允许范围本体设置在冷却器的下侧至熔融硅的表面，其中硅单晶11以这样确定的允许范围内的拉拔速度被拉起。

50. 发明申请

US20070228260A1 Previous amplifier circuit, light-receiving amplifier circuit, and optical pickup apparatus 失效
标题翻译：以前的放大器电路，光接收放大器电路和光学拾取装置
公开(公告)号：US20070228260A1
公开(公告)日：2007-10-04
申请号：US11710506
申请日：2007-02-26
申请人： Takashi Yokoyama
发明人： Takashi Yokoyama
IPC分类号： H01L31/00
CPC分类号： G11B7/131 , H03F3/08
摘要： A previous amplifier circuit of the present invention includes: a grounded emitter amplifier circuit using a grounded emitter transistor connected to a light receiving device; another grounded emitter amplifier circuit using another grounded emitter transistor connected to another light receiving device; and a grounded emitter changing switch to be switched in a manner such that an emitter of the grounded emitter transistors is grounded so as to cause only one of the grounded emitter amplifier circuits to operate. A light-receiving amplifier circuit includes the previous amplifier circuit. An optical pickup apparatus includes the light-receiving amplifier circuit.
摘要翻译：本发明的先前的放大器电路包括：使用连接到光接收装置的接地发射极晶体管的接地发射极放大器电路; 另一接地发射极放大器电路，使用另一接地发射极晶体管连接到另一光接收装置; 以及接地发射极改变开关，以使得接地的发射极晶体管的发射极接地，从而仅使一个接地的发射极放大器电路工作。光接收放大器电路包括先前的放大器电路。光拾取装置包括光接收放大器电路。

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