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41. 发明授权

US5755888A Method and apparatus of forming thin films 失效
标题翻译：形成薄膜的方法和装置
公开(公告)号：US5755888A
公开(公告)日：1998-05-26
申请号：US518267
申请日：1995-08-23
申请人： Hideo Torii , Eiji Fujii , Shigenori Hayashi , Ryoichi Takayama
发明人： Hideo Torii , Eiji Fujii , Shigenori Hayashi , Ryoichi Takayama
IPC分类号： C23C14/00 , C23C14/56 , C23C16/44 , C23C16/54 , C30B25/14 , H01L21/203 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C14/568 , C23C16/4412 , C23C16/54 , C30B25/14
摘要： An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemical vapor deposition device are provided with an exhaust pipe respectively for connection with a common exhaust means and an exhaust switching means. A method of forming thin films using this apparatus is also provided. According to the configuration in which the exhaust switching means is connected via exhaust pipes to the physical vapor deposition device, to the chemical vapor deposition device, and to the exhaust means, this apparatus can be accomplished in a small size which has at least two chambers and one exhaust means. In this way, thin films can be formed in a short thin-film formation time with a small apparatus, since vapor of a starting material which is led in at the time of chemical vapor deposition does not enter the physical vapor deposition device.
摘要翻译：提供一种形成薄膜并需要短的薄膜形成时间的装置，其包括至少一个物理气相沉积装置和至少一个化学气相沉积装置，其中所述物理气相沉积装置和所述化学气相沉积装置设置有分别用于与公共排气装置和排气开关装置连接的排气管。还提供了使用该装置形成薄膜的方法。根据其中排气切换装置经由排气管连接到物理气相沉积装置，化学气相沉积装置和排气装置的结构，该装置可以实现为具有至少两个室的小尺寸和一个排气装置。这样，由于在化学气相沉积时引入的原料的蒸气不会进入物理气相沉积装置，因此可以用小的装置在短的薄膜形成时间内形成薄膜。

42. 发明授权

US5105288A Liquid crystal display apparatus with the application of black level signal for suppressing light leakage 失效
标题翻译：具有应用黑电平信号的液晶显示装置，用于抑制漏光
公开(公告)号：US5105288A
公开(公告)日：1992-04-14
申请号：US598493
申请日：1990-10-16
申请人： Koji Senda , Fumiaki Emoto , Eiji Fujii , Atsuya Yamamoto , Akira Nakamura
发明人： Koji Senda , Fumiaki Emoto , Eiji Fujii , Atsuya Yamamoto , Akira Nakamura
IPC分类号： G09G3/20 , G09G3/36 , H04N3/12
CPC分类号： G09G3/3688 , G09G3/3648 , H04N3/127 , G09G2310/0248 , G09G2320/0209 , G09G3/2011
摘要： A liquid crystal display apparatus in which leakage of light caused by signal lines can be eliminated is disclosed. In the liquid crystal display apparatus, a predetermined potential corresponding to the black level is applied to the video signal lines during a period of time other than the horizontal blanking period, and image signals are transferred to one row of the pixels through the signal lines which the horizontal blanking period.
摘要翻译：公开了可以消除由信号线引起的光泄漏的液晶显示装置。在液晶显示装置中，在除了水平消隐期之外的时间段期间，对视频信号线施加与黑电平相对应的预定电位，并且通过信号线将图像信号传送到一行像素，水平消隐期。

43. 发明授权

US08562069B2 Fixing structure for interior base material 有权
标题翻译：内部基材固定结构
公开(公告)号：US08562069B2
公开(公告)日：2013-10-22
申请号：US12767872
申请日：2010-04-27
申请人： Mamoru Yamaguchi , Masami Uratsu , Michinori Kawasumi , Eiji Fujii , Koji Morita , Kenichi Uemori , Hiroshi Harada
发明人： Mamoru Yamaguchi , Masami Uratsu , Michinori Kawasumi , Eiji Fujii , Koji Morita , Kenichi Uemori , Hiroshi Harada
IPC分类号： B60J5/00
CPC分类号： B60R13/0243 , B60R2013/0293
摘要： A fixing structure for a vehicle interior material in accordance with the present invention includes: a first interior base material including a first end portion; a second interior base material including a second end portion disposed adjacent to the first end portion; an ornamental member disposed along an axis defined by the first end portion and the second end portion; and a plurality of joints that indirectly fix the first end portion and the second end portion via the ornamental member.
摘要翻译：根据本发明的用于车辆内部材料的固定结构包括：第一内部基材，包括第一端部; 第二内部基材，包括邻近所述第一端部设置的第二端部; 沿着由所述第一端部和所述第二端部限定的轴线设置的装饰构件; 以及经由装饰构件间接固定第一端部和第二端部的多个接头。

44. 发明授权

US07478558B2 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US07478558B2
公开(公告)日：2009-01-20
申请号：US11362583
申请日：2006-02-24
申请人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
发明人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
IPC分类号： G01C19/00 , B41J2/045 , H01L41/04
CPC分类号： H01L41/0815 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1646 , B41J2002/14491 , B41J2202/03 , G01C19/5607 , H01L41/1876 , H01L41/316 , Y10T29/49401
摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.
摘要翻译：在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置有（100）或（001）面。在取向控制层15的靠近第一电极层14的表面附近，（100） - 或（001） - 位于第一电极层14的靠近取向控制层15的一个表面上的钛或氧化钛上，并且沿与厚度方向垂直的方向的区域的横截面积沿着方向远离第一电极层14朝向相对侧。此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。

45. 发明授权

US07348715B2 Piezoelectric element and method for manufacturing the same, and ink jet head and ink jet recording apparatus using the piezoelectric element 有权
标题翻译：压电元件及其制造方法，以及使用该压电元件的喷墨头和喷墨记录装置
公开(公告)号：US07348715B2
公开(公告)日：2008-03-25
申请号：US11043704
申请日：2005-01-26
申请人： Hideo Torii , Eiji Fujii , Takeshi Kamada
发明人： Hideo Torii , Eiji Fujii , Takeshi Kamada
IPC分类号： B41J2/045 , H01L41/187
CPC分类号： B41J2/1646 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2002/1425 , H01L41/0805 , H01L41/094 , H01L41/1876 , H01L41/316
摘要： A lead content in a piezoelectric thin film (3) of a piezoelectric element (20) is made smaller as compared to stoichiometric composition. More specifically, the piezoelectric thin film (3) is made of lead zirconate titanate expressed as Pb(1-x)(Zr(1-s)Tis)O3(0
摘要翻译：与化学计量组成相比，压电元件（20）的压电薄膜（3）中的铅含量变小。更具体地说，压电薄膜（3）由表示为Pb（1-x）（Zr（1-s））Ti（s）的锆钛酸铅 O 3（0

46. 发明申请

US20050082638A1 Semiconductor device and method for fabricating the same 审中-公开
公开(公告)号：US20050082638A1
公开(公告)日：2005-04-21
申请号：US10968623
申请日：2004-10-19
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L21/02 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L29/76 , H01L21/3205
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.

47. 发明申请

US20050082637A1 Dielectric memory and method for fabricating the same 审中-公开
标题翻译：介质记忆及其制造方法
公开(公告)号：US20050082637A1
公开(公告)日：2005-04-21
申请号：US10964703
申请日：2004-10-15
申请人： Takumi Mikawa , Eiji Fujii
发明人： Takumi Mikawa , Eiji Fujii
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , H01L21/768 , H01L21/8242 , H01L29/00
CPC分类号： H01L28/55 , H01L21/7687 , H01L28/56 , H01L28/65 , H01L28/75 , H01L28/91
摘要： A semiconductor device is provided with an insulating film which is formed on a semiconductor substrate and has a first recess, a capacitor lower electrode which is formed on the walls and the bottom of the first recess and has a second recess, and a capacitor insulating film which is formed on the walls and the bottom of the second recess and has a third recess, and a capacitor upper electrode embedded in the third recess.
摘要翻译：半导体器件设置有绝缘膜，该绝缘膜形成在半导体衬底上并且具有第一凹部，形成在第一凹部的壁和底部上并具有第二凹部的电容器下电极，以及电容器绝缘膜其形成在第二凹部的壁和底部上，并且具有第三凹部，以及嵌入在第三凹部中的电容器上电极。

48. 发明授权

US06730951B2 Capacitor, semiconductor memory device, and method for manufacturing the same 有权
标题翻译：电容器，半导体存储器件及其制造方法
公开(公告)号：US06730951B2
公开(公告)日：2004-05-04
申请号：US10175804
申请日：2002-06-21
申请人： Yoshihisa Nagano , Eiji Fujii
发明人： Yoshihisa Nagano , Eiji Fujii
IPC分类号： H01L27108
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A capacitor includes: a lower electrode; a capacitor insulating film made of a metal oxide and formed on the lower electrode; an upper electrode formed on the capacitor insulating film; and a buried insulating film surrounding the lower electrode. The lower electrode includes a conductive barrier layer that prevents diffusion of oxygen, and an insulating barrier layer that prevents diffusion of hydrogen is formed so as to be in contact with at least a side surface of the conductive barrier layer in a side surface of the lower electrode.
摘要翻译：电容器包括：下电极; 由金属氧化物制成的电容绝缘膜，形成在下电极上; 形成在所述电容绝缘膜上的上电极; 以及包围下电极的掩埋绝缘膜。下电极包括防止氧的扩散的导电阻挡层，并且形成防止氢的扩散的绝缘阻挡层，以在下部电极的侧表面中与至少导电阻挡层的侧表面接触电极。

49. 发明授权

US06573111B2 Method of making a semiconductor device with capacitor element 失效
公开(公告)号：US06573111B2
公开(公告)日：2003-06-03
申请号：US10177781
申请日：2002-06-20
申请人： Yoshihisa Nagano , Yasuhiro Uemoto , Yuji Judai , Masamichi Azuma , Eiji Fujii
发明人： Yoshihisa Nagano , Yasuhiro Uemoto , Yuji Judai , Masamichi Azuma , Eiji Fujii
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/76895 , H01L27/11507
摘要： A semiconductor device includes: a silicon substrate; a MOS semiconductor device provided on the silicon substrate, the MOS semiconductor device including a silicide region on an outermost surface thereof; a first insulating film covering the MOS semiconductor device; a capacitor element provided on the first insulating film, the capacitor element comprising a lower electrode, an upper electrode, and a capacitor film interposed between the lower electrode and the upper electrode, and the capacitor film comprising a ferroelectric material; a second insulating film covering the first insulating film and the capacitor element; a contact hole provided in the first insulating film and the second insulating film over the MOS semiconductor device and the capacitor element; and an interconnection layer provided on the second insulating film for electrically connecting the MOS semiconductor device and the capacitor element to each other, wherein a bottom portion of the interconnection layer comprises a conductive material other than titanium.

50. 发明授权

US06475604B1 Thin film thermistor element and method for the fabrication of thin film thermistor element 有权
标题翻译：薄膜热敏电阻元件及制造薄膜热敏电阻元件的方法
公开(公告)号：US06475604B1
公开(公告)日：2002-11-05
申请号：US09584768
申请日：2000-06-01
申请人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
发明人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
IPC分类号： H01C700
CPC分类号： H01C17/12 , H01C7/023 , Y10T428/24917
摘要： A thin film thermistor element 10 is formed by forming on a backing substrate 11 of alumina a thermistor thin film 12 and a pair of comb electrodes 13 and 14 formed of a thin film of Pt. The thermistor thin film 12, which is formed of, for example, complex oxide of Mn—Co—Ni, has either a spinel type crystal structure which is priority oriented or oriented mainly in a (100) surface or a bixbite type crystal structure which is priority oriented in a (100) or (111) surface. Alternatively, the thermistor thin film is formed of LaCoO3 and has a rhombohedral bixbite type crystal structure. This makes it possible to hold the variation in resistance value low thereby to achieve high accuracy, and the deterioration with time can be held low and the high temperature durability can be improved, for the achievement of high reliability.
摘要翻译：通过在氧化铝的背衬基板11上形成热敏电阻薄膜12和由Pt的薄膜形成的一对梳状电极13和14来形成薄膜热敏电阻元件10。由例如Mn-Co-Ni的复合氧化物形成的热敏电阻薄膜12具有尖晶石型晶体结构，其优先取向或主要在（100）表面取向或双键型晶体结构中，其中，在（100）或（111）表面优先考虑。或者，热敏电阻薄膜由LaCoO 3形成，并且具有菱形双峰型晶体结构。这使得可以将电阻值的变化保持为低，从而实现高精度，并且，为了实现高可靠性，能够将劣化随时间变低，提高耐高温性。

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