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1. 发明授权

US06174822B1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06174822B1
公开(公告)日：2001-01-16
申请号：US09175250
申请日：1998-10-20
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L2131
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
摘要翻译：半导体器件包括：设置在其上具有集成电路的支撑衬底上并包括下电极，电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜，并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。

2. 发明申请

US20050082638A1 Semiconductor device and method for fabricating the same 审中-公开
公开(公告)号：US20050082638A1
公开(公告)日：2005-04-21
申请号：US10968623
申请日：2004-10-19
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L21/02 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L29/76 , H01L21/3205
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.

3. 发明授权

US06849887B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06849887B2
公开(公告)日：2005-02-01
申请号：US09103873
申请日：1998-06-24
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L21/02 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L29/76
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
摘要翻译：半导体器件包括：设置在其上具有集成电路的支撑衬底上并包括下电极，电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜，并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。

4. 发明授权

US06737697B2 Semiconductor device and method and system for fabricating the same 失效
公开(公告)号：US06737697B2
公开(公告)日：2004-05-18
申请号：US09779662
申请日：2001-02-09
申请人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
发明人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
IPC分类号： H01L2976
CPC分类号： H01L28/55 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31612
摘要： A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.

5. 发明授权

US06939725B2 Method of fabricating semiconductor device with capacitor covered by a TEOS-03 film 失效
标题翻译：制造具有TEOS-03薄膜覆盖的电容器的半导体器件的方法
公开(公告)号：US06939725B2
公开(公告)日：2005-09-06
申请号：US10769808
申请日：2004-02-03
申请人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
发明人： Toshie Kutsunai , Shinichiro Hayashi , Yuji Judai , Yoshihisa Nagano
IPC分类号： H01L23/522 , C23C16/40 , H01L21/02 , H01L21/316 , H01L21/318 , H01L21/768 , H01L21/822 , H01L21/8234 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/06 , H01L27/105 , H01L27/108 , H01L21/00 , H01L29/76
CPC分类号： H01L28/55 , C23C16/401 , H01L21/02126 , H01L21/02164 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31612
摘要： A capacitor including a capacitor lower electrode, a capacitor dielectric film of a highly dielectric film or a ferroelectric film and a capacitor upper electrode is formed on a semiconductor substrate. A protection film is formed on the semiconductor substrate so as to cover the capacitor. A first TEOS film having a relatively large water content is formed on the protection film through first TEOS-O3 CVD where an ozone concentration is relatively low. A second TEOS-O3 film having a relatively small water content is formed on the first TEOS-O3 film through second TEOS-O3 CVD where the ozone concentration is relatively high.
摘要翻译：在半导体衬底上形成包括电容器下电极，高电介质膜的电容器电介质膜或铁电体膜和电容器上电极的电容器。在半导体衬底上形成保护膜以覆盖电容器。具有相对较大含水量的第一TEOS膜通过臭氧浓度相对较低的第一TEOS-O 3 CVD形成在保护膜上。通过第二TEOS-O 3 3在第一TEOS-O 3膜上形成具有相对较小含水量的第二TEOS-O 3膜。臭氧浓度相对较高的CVD。

6. 发明授权

US07180122B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07180122B2
公开(公告)日：2007-02-20
申请号：US10823797
申请日：2004-04-14
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/119
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
摘要翻译：半导体器件包括第一氢阻挡膜，形成在第一氢阻挡膜上的电容器器件和形成为覆盖电容器器件的第二氢阻挡膜。第一和第二氢阻挡膜每个含有至少一种常见类型的原子，用于允许第一和第二氢阻挡膜彼此粘附。

7. 发明申请

US20060124983A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060124983A1
公开(公告)日：2006-06-15
申请号：US11346207
申请日：2006-02-03
申请人： Toshie Kutsunai , Takumi Mikawa , Yuji Judai
发明人： Toshie Kutsunai , Takumi Mikawa , Yuji Judai
IPC分类号： H01L21/8242 , H01L29/94
CPC分类号： H01L27/11507 , H01L21/28568 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A semiconductor device has contact plugs each for electrically connecting a capacitor element to the source/drain region of a transistor, conductive layers formed on the contact plugs and made of titanium nitride which is a nitride only of a refractory metal, and polycrystalline conductive oxygen barrier layers each composed of a multilayer structure consisting of a titanium aluminum nitride film, an iridium film, and an iridium oxide film to prevent the diffusion of oxygen. Since the conductive layers made of titanium nitride which is low in crystal orientation is provided under the oxygen barrier films, the titanium aluminum nitride films formed as the oxygen barrier films directly on the conductive layers have a compact film structure so that the penetration of oxygen is prevented effectively.
摘要翻译：半导体器件具有用于将电容器元件电连接到晶体管的源极/漏极区域的接触插塞，形成在接触插塞上的导电层和仅由耐火金属制成的氮化钛制成的多晶导电氧气阻挡层各层由由氮化铝钛膜，铱膜和氧化铱膜构成的多层结构构成，以防止氧的扩散。由于在氧阻隔膜下面设置由结晶取向低的氮化钛制成的导体层，所以直接在导电层上形成为氧阻隔膜的氮化铝钛膜具有致密的膜结构，使得氧的渗透为有效防范。

8. 发明申请

US20060220091A1 Semiconductor device and method for fabricating the same 有权
公开(公告)号：US20060220091A1
公开(公告)日：2006-10-05
申请号：US11366570
申请日：2006-03-03
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.

9. 发明授权

US07060552B2 Memory device with hydrogen-blocked ferroelectric capacitor 有权
标题翻译：具有氢阻塞铁电电容器的存储器件
公开(公告)号：US07060552B2
公开(公告)日：2006-06-13
申请号：US10843435
申请日：2004-05-12
申请人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
发明人： Takumi Mikawa , Toshie Kutsunai , Yuji Judai
IPC分类号： H01L21/8242
CPC分类号： H01L27/11502 , H01L27/10894 , H01L27/11507 , H01L28/55
摘要： A semiconductor memory device of the present invention includes: a semiconductor substrate; a memory cell capacitor for storing data, including a first electrode provided above the semiconductor substrate, a capacitance insulating film formed on the first electrode, and a second electrode provided on the capacitance insulating film; a step reducing film covering an upper surface and a side surface of the memory cell capacitor; and an overlying hydrogen barrier film covering the step reducing film.
摘要翻译：本发明的半导体存储器件包括：半导体衬底; 用于存储数据的存储单元电容器，包括设置在半导体衬底上的第一电极，形成在第一电极上的电容绝缘膜和设置在电容绝缘膜上的第二电极; 覆盖所述存储单元电容器的上表面和侧面的阶梯降低膜; 以及覆盖降低层的覆盖氢阻挡膜。

10. 发明授权

US07557011B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07557011B2
公开(公告)日：2009-07-07
申请号：US11280250
申请日：2005-11-17
申请人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
发明人： Takumi Mikawa , Yuji Judai , Toshie Kutsunai
IPC分类号： H01L21/108 , H01L21/316 , H01L21/318
CPC分类号： H01L28/65 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A semiconductor device includes a first hydrogen barrier film, a capacitor device formed on the first hydrogen barrier film, and a second hydrogen barrier film formed to cover the capacitor device. The first and second hydrogen barrier films each contain at least one common type of atoms for allowing the first and second hydrogen barrier films to adhere to each other.
摘要翻译：半导体器件包括第一氢阻挡膜，形成在第一氢阻挡膜上的电容器器件和形成为覆盖电容器器件的第二氢阻挡膜。第一和第二氢阻挡膜每个含有至少一种常见类型的原子，用于允许第一和第二氢阻挡膜彼此粘附。

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