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1. 发明授权

US06573111B2 Method of making a semiconductor device with capacitor element 失效
公开(公告)号：US06573111B2
公开(公告)日：2003-06-03
申请号：US10177781
申请日：2002-06-20
申请人： Yoshihisa Nagano , Yasuhiro Uemoto , Yuji Judai , Masamichi Azuma , Eiji Fujii
发明人： Yoshihisa Nagano , Yasuhiro Uemoto , Yuji Judai , Masamichi Azuma , Eiji Fujii
IPC分类号： H01L2100
CPC分类号： H01L27/11502 , H01L21/76895 , H01L27/11507
摘要： A semiconductor device includes: a silicon substrate; a MOS semiconductor device provided on the silicon substrate, the MOS semiconductor device including a silicide region on an outermost surface thereof; a first insulating film covering the MOS semiconductor device; a capacitor element provided on the first insulating film, the capacitor element comprising a lower electrode, an upper electrode, and a capacitor film interposed between the lower electrode and the upper electrode, and the capacitor film comprising a ferroelectric material; a second insulating film covering the first insulating film and the capacitor element; a contact hole provided in the first insulating film and the second insulating film over the MOS semiconductor device and the capacitor element; and an interconnection layer provided on the second insulating film for electrically connecting the MOS semiconductor device and the capacitor element to each other, wherein a bottom portion of the interconnection layer comprises a conductive material other than titanium.

2. 发明授权

US06174822B1 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06174822B1
公开(公告)日：2001-01-16
申请号：US09175250
申请日：1998-10-20
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L2131
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
摘要翻译：半导体器件包括：设置在其上具有集成电路的支撑衬底上并包括下电极，电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜，并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。

3. 发明申请

US20050082638A1 Semiconductor device and method for fabricating the same 审中-公开
公开(公告)号：US20050082638A1
公开(公告)日：2005-04-21
申请号：US10968623
申请日：2004-10-19
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L21/02 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L29/76 , H01L21/3205
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.

4. 发明授权

US06849887B2 Semiconductor device and method for fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06849887B2
公开(公告)日：2005-02-01
申请号：US09103873
申请日：1998-06-24
申请人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
发明人： Yoshihisa Nagano , Toshie Kutsunai , Yuji Judai , Yasuhiro Uemoto , Eiji Fujii
IPC分类号： H01L21/02 , H01L21/768 , H01L21/8242 , H01L23/522 , H01L29/76
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: a capacitor provided on a supporting substrate having an integrated circuit thereon and including a lower electrode, a dielectric film, and an upper electrode; a first interlayer insulating film provided so as to cover the capacitor; a first interconnect selectively provided on the first interlayer insulating film and electrically connected to the integrated circuit and the capacitor through a first contact hole formed in the first interlayer insulating film; a second interlayer insulating film formed of ozone TEOS and provided so as to cover the first interconnect; a second interconnect selectively provided on the second interlayer insulating film and electrically connected to the first interconnect through a second contact hole formed in the second interlayer insulating film; and a passivation layer provided so as to cover the second interconnect.
摘要翻译：半导体器件包括：设置在其上具有集成电路的支撑衬底上并包括下电极，电介质膜和上电极的电容器; 设置为覆盖电容器的第一层间绝缘膜; 选择性地设置在所述第一层间绝缘膜上并通过形成在所述第一层间绝缘膜中的第一接触孔与所述集成电路和所述电容器电连接的第一互连; 由臭氧TEOS形成的第二层间绝缘膜，并设置为覆盖第一互连; 选择性地设置在第二层间绝缘膜上并通过形成在第二层间绝缘膜中的第二接触孔电连接到第一互连的第二互连; 以及设置成覆盖第二互连的钝化层。

5. 发明授权

US06468875B2 Fabrication method of capacitor for integrated circuit 失效
标题翻译：集成电路电容器的制作方法
公开(公告)号：US06468875B2
公开(公告)日：2002-10-22
申请号：US09768170
申请日：2001-01-24
申请人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
发明人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
IPC分类号： H01L2120
CPC分类号： H01L27/11502 , H01L28/40 , H01L28/56
摘要： A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
摘要翻译：一种用于制造用于集成电路的电容器的方法，包括以下步骤：在衬底上形成用于粘附层的钛膜，通过在离子注入氧离子之后将钛膜退火形成用于扩散阻挡层的二氧化钛膜钛膜的表面区域，以将表面区域中的钛变为二氧化钛，并在二氧化钛膜上形成高介电常数电容器。

6. 发明授权

US06204111B1 Fabrication method of capacitor for integrated circuit 失效
标题翻译：集成电路电容器的制作方法
公开(公告)号：US06204111B1
公开(公告)日：2001-03-20
申请号：US09238157
申请日：1999-01-28
申请人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
发明人： Yasuhiro Uemoto , Eiji Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , H01L28/40 , H01L28/56
摘要： A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
摘要翻译：一种用于制造用于集成电路的电容器的方法，包括以下步骤：在衬底上形成用于粘附层的钛膜，通过在离子注入氧离子之后将钛膜退火形成用于扩散阻挡层的二氧化钛膜钛膜的表面区域，以将表面区域中的钛变为二氧化钛，并在二氧化钛膜上形成高介电常数电容器。

7. 发明授权

US5929475A Capacitor for integrated circuit and its fabrication method 失效
标题翻译：集成电路电容及其制造方法
公开(公告)号：US5929475A
公开(公告)日：1999-07-27
申请号：US573134
申请日：1995-12-15
申请人： Yasuhiro Uemoto , Eigi Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
发明人： Yasuhiro Uemoto , Eigi Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
IPC分类号： H01L21/02 , H01L21/314 , H01L27/115 , H01L29/76 , H01L27/108 , H01L31/062
CPC分类号： H01L27/11502 , H01L28/40 , H01L28/56
摘要： A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
摘要翻译：一种用于制造用于集成电路的电容器的方法，包括以下步骤：在衬底上形成用于粘附层的钛膜，通过在离子注入氧离子之后将钛膜退火形成用于扩散阻挡层的二氧化钛膜钛膜的表面区域，以将表面区域中的钛变为二氧化钛，并在二氧化钛膜上形成高介电常数电容器。

8. 发明授权

US06214660B1 Capacitor for integrated circuit and its fabrication method 失效
标题翻译：集成电路电容及其制造方法
公开(公告)号：US06214660B1
公开(公告)日：2001-04-10
申请号：US09177620
申请日：1998-10-23
申请人： Yasuhiro Uemoto , Eigi Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
发明人： Yasuhiro Uemoto , Eigi Fujii , Koji Arita , Yoshihisa Nagano , Yasuhiro Shimada , Masamichi Azuma , Atsuo Inoue , Yasufumi Izutsu
IPC分类号： H01L213205
CPC分类号： H01L27/11502 , H01L28/40 , H01L28/56
摘要： A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
摘要翻译：一种用于制造用于集成电路的电容器的方法，包括以下步骤：在衬底上形成用于粘附层的钛膜，通过在离子注入氧离子之后将钛膜退火形成用于扩散阻挡层的二氧化钛膜钛膜的表面区域，以将表面区域中的钛变为二氧化钛，并在二氧化钛膜上形成高介电常数电容器。

9. 发明授权

US06169304A Semiconductor device having a passivation layer which minimizes diffusion of hydrogen into a dielectric layer 失效
标题翻译：具有钝化层的半导体器件使氢扩散到电介质层中最小化
公开(公告)号：US06169304A
公开(公告)日：2001-01-02
申请号：US09071534
申请日：1998-05-04
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semiconductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 1021 atoms/cm3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种通过半导体衬底上的层间绝缘层形成电容器的半导体器件，其上形成集成电路。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

10. 发明授权

US5780351A Semiconductor device having capacitor and manufacturing method thereof 失效
标题翻译：具有电容器的半导体器件及其制造方法
公开(公告)号：US5780351A
公开(公告)日：1998-07-14
申请号：US844108
申请日：1997-04-28
申请人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
发明人： Koji Arita , Eiji Fujii , Yasuhiro Shimada , Yasuhiro Uemoto , Toru Nasu , Akihiro Matsuda , Yoshihisa Nagano , Atsuo Inoue , Taketoshi Matsuura , Tatsuo Otsuki
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/115 , H01L21/20 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958
摘要： A semi conductor device forming a capacitor through an interlayer insulating layer on a semiconductor substrate on which an integrated circuit is formed. This semiconductor device has an interlayer insulating layer with moisture content of 0.5 g/cm.sup.3 or less, which covers the capacitor in one aspect, and has a passivation layer with hydrogen content of 10.sup.21 atoms/cm.sup.3 or less, which covers the interconnections of the capacitor in other aspect. By thus constituting, deterioration of the capacitor dielectric can be prevented which brings about the electrical reliability of the ferroelectric layer or high dielectric layer.
摘要翻译：一种半导体器件，其在形成集成电路的半导体衬底上通过层间绝缘层形成电容器。该半导体装置具有含水量为0.5g / cm 3以下的层间绝缘层，其在一个方面覆盖电容器，并且具有氢含量为1021原子/ cm3以下的钝化层，其覆盖电容器的互连在其他方面。通过这样构成，可以防止导致铁电层或高介电层的电可靠性的电容器电介质的劣化。

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