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1. 发明授权

US5755888A Method and apparatus of forming thin films 失效
标题翻译：形成薄膜的方法和装置
公开(公告)号：US5755888A
公开(公告)日：1998-05-26
申请号：US518267
申请日：1995-08-23
申请人： Hideo Torii , Eiji Fujii , Shigenori Hayashi , Ryoichi Takayama
发明人： Hideo Torii , Eiji Fujii , Shigenori Hayashi , Ryoichi Takayama
IPC分类号： C23C14/00 , C23C14/56 , C23C16/44 , C23C16/54 , C30B25/14 , H01L21/203 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C14/568 , C23C16/4412 , C23C16/54 , C30B25/14
摘要： An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemical vapor deposition device are provided with an exhaust pipe respectively for connection with a common exhaust means and an exhaust switching means. A method of forming thin films using this apparatus is also provided. According to the configuration in which the exhaust switching means is connected via exhaust pipes to the physical vapor deposition device, to the chemical vapor deposition device, and to the exhaust means, this apparatus can be accomplished in a small size which has at least two chambers and one exhaust means. In this way, thin films can be formed in a short thin-film formation time with a small apparatus, since vapor of a starting material which is led in at the time of chemical vapor deposition does not enter the physical vapor deposition device.
摘要翻译：提供一种形成薄膜并需要短的薄膜形成时间的装置，其包括至少一个物理气相沉积装置和至少一个化学气相沉积装置，其中所述物理气相沉积装置和所述化学气相沉积装置设置有分别用于与公共排气装置和排气开关装置连接的排气管。还提供了使用该装置形成薄膜的方法。根据其中排气切换装置经由排气管连接到物理气相沉积装置，化学气相沉积装置和排气装置的结构，该装置可以实现为具有至少两个室的小尺寸和一个排气装置。这样，由于在化学气相沉积时引入的原料的蒸气不会进入物理气相沉积装置，因此可以用小的装置在短的薄膜形成时间内形成薄膜。

2. 发明授权

US6105225A Method of manufacturing a thin film sensor element 失效
标题翻译：制造薄膜传感器元件的方法
公开(公告)号：US6105225A
公开(公告)日：2000-08-22
申请号：US600863
申请日：1996-02-09
申请人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
发明人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
IPC分类号： G01P15/08 , G01P15/09 , H01L41/29 , H01L41/22
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.
摘要翻译：公开了一种制造小型，轻型，高精度和廉价的薄膜传感器元件的方法。薄膜传感器元件包括具有开口部分和粘附在其上的多层膜结构的传感器保持基板。多层膜结构包括第一电极膜，第二电极膜和存在于第一和第二电极膜之间的压电电介质氧化物膜。制造薄膜传感器元件的方法包括以下步骤：通过在碱金属卤化物衬底的表面上形成具有（100）面取向的第一电极膜来形成多层膜结构，在其上形成压电电介质氧化物，并形成压电电介质氧化物上的第二电极膜; 将多层膜结构粘附在具有开口部的传感器保持基板的表面上; 并用水溶解和除去碱金属卤化物基质。

3. 发明授权

US5612536A Thin film sensor element and method of manufacturing the same 失效
标题翻译：薄膜传感器元件及其制造方法
公开(公告)号：US5612536A
公开(公告)日：1997-03-18
申请号：US374989
申请日：1995-01-19
申请人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
发明人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
IPC分类号： G01P15/08 , G01P15/09 , H01L41/29 , G01J5/10
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate having an opening part with an adhesive. After a connection electrode is connected, the whole structure is washed with water, thereby removing the KBr substrate.
摘要翻译：薄膜传感器元件包括：具有开口部的传感器保持基板和附着在其上的多层膜，至少由电极膜A，具有（100）面取向的电极膜B和存在于电极之间的压电电介质氧化膜膜A和电极膜B.结果，可以获得可用于加速度传感器元件和热电型红外线传感器元件的小，轻，高精度和便宜的薄膜传感器元件。在平板KBr基板的表面上，通过等离子体MOCVD方法形成导电NiO的岩盐晶体结构氧化物，其垂直方向相对于衬底表面<100>晶体取向。通过溅射法，在该表面上通过外延生长形成PZT膜，在其上形成Ni-Cr电极膜。接下来，将多层膜结构反转并粘接到具有开口部的粘合剂的传感器基板。连接电极连接后，整个结构用水清洗，从而除去KBr基板。

4. 发明授权

US07083270B2 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US07083270B2
公开(公告)日：2006-08-01
申请号：US10462358
申请日：2003-06-16
申请人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
发明人： Hideo Torii , Eiji Fujii , Atsushi Tomozawa , Akiko Murata , Ryoichi Takayama , Taku Hirasawa
IPC分类号： B41J2/045
CPC分类号： G01P15/0922 , B41J2/14233 , B41J2/14282 , B41J2002/1425 , B41J2202/03 , G01C19/5607 , H01L41/0477 , H01L41/0815 , H01L41/094 , H01L41/0973 , H01L41/316 , H01L41/319
摘要： In a piezoelectric element 20, a first electrode layer 2 made of an alloy of at least one metal selected from the group consisting of cobalt, nickel, iron, manganese and copper and a noble metal is formed on a silicon substrate 1, and a piezoelectric layer 3 made of a rhombohedral or tetragonal perovskite oxide (e.g., PZT) is formed on the first electrode layer 2 so that the piezoelectric layer 3 is preferentially oriented along the (001) plane.
摘要翻译：在压电元件20中，在硅基板1上形成由选自钴，镍，铁，锰和铜中的至少一种金属和贵金属构成的第一电极层2，在第一电极层2上形成由菱方或四方钙钛矿氧化物（例如PZT）制成的层3，使得压电层3优先沿（001）面取向。

5. 发明申请

US20060146097A1 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US20060146097A1
公开(公告)日：2006-07-06
申请号：US11362583
申请日：2006-02-24
申请人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
发明人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
IPC分类号： B41J2/045
CPC分类号： H01L41/0815 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1646 , B41J2002/14491 , B41J2202/03 , G01C19/5607 , H01L41/1876 , H01L41/316 , Y10T29/49401
摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.
摘要翻译：在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置（100）或（001）面。在取向控制层15的靠近第一电极层14的表面附近，位于第一电极层14的一个表面上的（100）或（001）取向区域延伸到钛或氧化钛上更靠近取向控制层15，并且沿与厚度方向正交的方向的区域的横截面积沿远离第一电极层14的方向逐渐增大。此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。

6. 发明申请

US20050087689A1 Pyroelectric device, method for manufacturing same and infrared sensor 审中-公开
标题翻译：热电装置，制造方法和红外传感器
公开(公告)号：US20050087689A1
公开(公告)日：2005-04-28
申请号：US10503328
申请日：2003-12-04
申请人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Satoru Fujii , Eiji Fujii , Hideo Torii , Ryoichi Takayama
IPC分类号： G01J5/34 , H01L37/02 , G01J5/00
CPC分类号： G01J5/34 , H01L37/025
摘要： A first electrode layer made of a noble metal containing at least one additive selected from the group consisting of Ti, Co, Ni, Mg, Fe, Ca, Sr, Mn, Ba and Al and oxides thereof, a pyroelectric layer having a thickness of 0.5 to 5 μm and having a perovskite crystalline structure whose chemical composition is represented as (Pb(1-y)Lay)Ti(1-y/4)O3 (0
摘要翻译：由含有选自Ti，Co，Ni，Mg，Fe，Ca，Sr，Mn，Ba和Al中的至少一种添加剂的贵金属制成的第一电极层及其氧化物，其厚度为 0.5〜5μm，具有钙化晶体结构，其化学组成表示为（Pb（1-y）La y）Ti（1-y / 4））O 3（0

7. 发明授权

US5712001A Chemical vapor deposition process for producing oxide thin films 失效
标题翻译：用于生产氧化物薄膜的化学气相沉积工艺
公开(公告)号：US5712001A
公开(公告)日：1998-01-27
申请号：US619076
申请日：1996-03-20
申请人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
发明人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
IPC分类号： C30B25/10 , C23C16/40 , C23C16/455 , C23C16/50 , C23C16/509 , C30B25/16 , B05D3/06
CPC分类号： C23C16/45561 , C23C16/406 , C23C16/455 , C23C16/5096
摘要： The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder is provided in a reaction chamber. The substrate holder, which holds substrates thereunder, includes a substrate heater. The substrate holder is grounded to provide an electrode. Another electrode, which is connected to a high frequency power source, is located opposing the substrate holder in the reaction chamber. At a side wall of the reaction chamber, an exhaust is arranged. In a plasma electric discharge area formed between the substrate holder and the electrode, a material gas supplier is located, having a predetermined tilt angle .theta. with respect to the substrate holder.
摘要翻译：本发明涉及一种制备具有NaCl型结构，尖晶石结构或纤锌矿结构的晶体取向氧化物薄膜的方法，该结构用作缓冲层以获得诸如超导氧化物薄膜和铁电体之类的功能氧化物薄膜薄膜和用于其的化学气相沉积设备。可旋转的基板保持器设置在反应室中。保持基板的基板支架包括基板加热器。衬底保持器接地以提供电极。连接到高频电源的另一个电极与反应室中的衬底保持器相对定位。在反应室的侧壁处布置排气。在形成在基板支架和电极之间的等离子体放电区域中，相对于基板支架具有预定的倾斜角度θ的材料气体供应器。

8. 发明授权

US5663089A Method for producing a laminated thin film capacitor 失效
标题翻译：叠层薄膜电容器的制造方法
公开(公告)号：US5663089A
公开(公告)日：1997-09-02
申请号：US465350
申请日：1995-06-05
申请人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
发明人： Atsushi Tomozawa , Eiji Fujii , Hideo Torii , Masumi Hattori , Satoru Fujii , Ryoichi Takayama
IPC分类号： H01G4/30 , H01L21/70
CPC分类号： H01G4/306
摘要： A laminated thin film capacitor having a substrate, at least two electrode layers, at least one dielectric layer and a pair of external electrode which are placed on respective side walls of the capacitor, wherein the metal electrode layer and the dielectric layers are laminated alternately on the substrate, and every other metal electrode layers are exposed on each of side walls of the capacitor, which capacitor is excellent in dielectric properties such as a high capacity per unit volume.
摘要翻译：一种叠层薄膜电容器，其具有基板，至少两个电极层，至少一个电介质层和一对外部电极，所述至少一个电介质层和一对外部电极被放置在所述电容器的相应侧壁上，其中所述金属电极层和所述电介质层交替层叠在基板和每个其他金属电极层暴露在电容器的每个侧壁上，该电容器具有优异的介电特性，例如每单位体积的高容量。

9. 发明授权

US07478558B2 Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus 有权
标题翻译：压电元件，喷墨头，角速度传感器，其制造方法和喷墨记录装置
公开(公告)号：US07478558B2
公开(公告)日：2009-01-20
申请号：US11362583
申请日：2006-02-24
申请人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
发明人： Eiji Fujii , Hideo Torii , Ryoichi Takayama , Atsushi Tomozawa , Akiko Murata , Taku Hirasawa
IPC分类号： G01C19/00 , B41J2/045 , H01L41/04
CPC分类号： H01L41/0815 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1646 , B41J2002/14491 , B41J2202/03 , G01C19/5607 , H01L41/1876 , H01L41/316 , Y10T29/49401
摘要： In a piezoelectric element, an adhesive layer 12 is provided on a substrate 11, a first electrode layer 14 made of a noble metal containing titanium or titanium oxide is provided on the adhesive layer 12, and an orientation control layer 15 that is preferentially oriented along a (100) or (001) plane is provided on the first electrode layer 14. In the vicinity of a surface of the orientation control layer 15 that is closer to the first electrode layer 14, a (100)- or (001)-oriented region extends over titanium or titanium oxide located on one surface of the first electrode layer 14 that is closer to the orientation control layer 15, and the cross-sectional area of the region in the direction perpendicular to the thickness direction gradually increases in the direction away from the first electrode layer 14 toward the opposite side. Further, a piezoelectric layer 16 that is preferentially oriented along a (001) plane is provided on the orientation control layer 15.
摘要翻译：在压电元件中，在基板11上设置粘合剂层12，在粘合剂层12上设置由含有钛或氧化钛的贵金属构成的第一电极层14，优选的是取向控制层15 在第一电极层14上设置有（100）或（001）面。在取向控制层15的靠近第一电极层14的表面附近，（100） - 或（001） - 位于第一电极层14的靠近取向控制层15的一个表面上的钛或氧化钛上，并且沿与厚度方向垂直的方向的区域的横截面积沿着方向远离第一电极层14朝向相对侧。此外，在取向控制层15上设置优选沿（001）面取向的压电体层16。

10. 发明授权

US06475604B1 Thin film thermistor element and method for the fabrication of thin film thermistor element 有权
标题翻译：薄膜热敏电阻元件及制造薄膜热敏电阻元件的方法
公开(公告)号：US06475604B1
公开(公告)日：2002-11-05
申请号：US09584768
申请日：2000-06-01
申请人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
发明人： Eiji Fujii , Atsushi Tomozawa , Hideo Torii , Ryoichi Takayama
IPC分类号： H01C700
CPC分类号： H01C17/12 , H01C7/023 , Y10T428/24917
摘要： A thin film thermistor element 10 is formed by forming on a backing substrate 11 of alumina a thermistor thin film 12 and a pair of comb electrodes 13 and 14 formed of a thin film of Pt. The thermistor thin film 12, which is formed of, for example, complex oxide of Mn—Co—Ni, has either a spinel type crystal structure which is priority oriented or oriented mainly in a (100) surface or a bixbite type crystal structure which is priority oriented in a (100) or (111) surface. Alternatively, the thermistor thin film is formed of LaCoO3 and has a rhombohedral bixbite type crystal structure. This makes it possible to hold the variation in resistance value low thereby to achieve high accuracy, and the deterioration with time can be held low and the high temperature durability can be improved, for the achievement of high reliability.
摘要翻译：通过在氧化铝的背衬基板11上形成热敏电阻薄膜12和由Pt的薄膜形成的一对梳状电极13和14来形成薄膜热敏电阻元件10。由例如Mn-Co-Ni的复合氧化物形成的热敏电阻薄膜12具有尖晶石型晶体结构，其优先取向或主要在（100）表面取向或双键型晶体结构中，其中，在（100）或（111）表面优先考虑。或者，热敏电阻薄膜由LaCoO 3形成，并且具有菱形双峰型晶体结构。这使得可以将电阻值的变化保持为低，从而实现高精度，并且，为了实现高可靠性，能够将劣化随时间变低，提高耐高温性。

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