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    • 42. 发明授权
    • Nanowire-based device and array with coaxial electrodes
    • 基于纳米线的器件和具有同轴电极的阵列
    • US08283556B2
    • 2012-10-09
    • US12247860
    • 2008-10-08
    • Nobuhiko KobayashiR. Stanley WilliamsShih-Yuan Wang
    • Nobuhiko KobayashiR. Stanley WilliamsShih-Yuan Wang
    • H01L31/00H02N6/00
    • H01L31/109B82Y20/00G02B5/003H01L31/022425H01L31/035227H01L31/0543H01L31/072Y02E10/52
    • A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.
    • 基于纳米线的光子器件和阵列采用沿着电极的垂直范围以不均匀方式连接在同轴布置的电极之间的纳米线。 该装置包括由圆周间隙分开的一对电极。 纳米线从该对的内部电极混沌地发出并且跨越圆周间隙连接到该对的外部电极。 该阵列包括外部电极,其具有电池和内部电极的互连图案,每个电池单元与外部电极同轴地布置并与外部电极分开,并由其间隔开。 纳米线从内部电极混沌地发散并且跨过电池的各个周向间隙连接到外部电极。 器件和阵列还包括电极之间的半导体结。
    • 49. 发明授权
    • Nanowire device with (111) vertical sidewalls and method of fabrication
    • 具有(111)垂直侧壁的纳米线器件和制造方法
    • US07692179B2
    • 2010-04-06
    • US10888628
    • 2004-07-09
    • M. Saif IslamYong ChenShih-Yuan WangR. Stanley Williams
    • M. Saif IslamYong ChenShih-Yuan WangR. Stanley Williams
    • H01L29/06
    • H01L27/1203B82Y10/00G11C2213/81H01L29/045H01L29/0665H01L29/0673H01L29/861
    • A nano-scale device and method of fabrication provide a nanowire having (111) vertical sidewalls. The nano-scale device includes a semiconductor-on-insulator substrate polished in a [110] direction, the nanowire, and an electrical contact at opposite ends of the nanowire. The method includes wet etching a semiconductor layer of the semiconductor-on-insulator substrate to form the nanowire extending between a pair of islands in the semiconductor layer. The method further includes depositing an electrically conductive material on the pair of islands to form the electrical contacts. A nano-pn diode includes the nanowire as a first nano-electrode, a pn-junction vertically stacked on the nanowire, and a second nano-electrode on a (110) horizontal planar end of the pn-junction. The nano-pn diode may be fabricated in an array of the diodes on the semiconductor-on-insulator substrate.
    • 纳米级器件和制造方法提供具有(111)垂直侧壁的纳米线。 纳米级器件包括在[110]方向上抛光的绝缘体上半导体衬底,纳米线和在纳米线的相对端的电接触。 该方法包括湿式蚀刻绝缘体上半导体衬底的半导体层,以形成在半导体层中的一对岛之间延伸的纳米线。 该方法还包括在一对岛上沉积导电材料以形成电触头。 纳米pn二极管包括纳米线作为第一纳米电极,垂直堆叠在纳米线上的pn结,以及在pn结的(110)水平平面端上的第二纳米电极。 可以在绝缘体上半导体衬底上的二极管的阵列中制造纳米pn二极管。