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1. 发明授权

US07763978B2 Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions 有权
标题翻译：用于将信息写入和读取存储在三维交叉列阵列结点中的信息的三维交叉列阵列系统和方法
公开(公告)号：US07763978B2
公开(公告)日：2010-07-27
申请号：US11729228
申请日：2007-03-28
申请人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
发明人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
IPC分类号： H01L23/52 , H01L23/48 , H01L29/40
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/00 , G11C13/0023 , G11C13/0033 , G11C2213/71 , G11C2213/79 , G11C2213/81 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要翻译：本发明的各种实施例涉及三维横杆阵列。在本发明的一个方面，三维交叉开关阵列包括多个交叉开关阵列，第一解复用器，第二解复用器和第三解复用器。每个横杆阵列包括第一纳米线层，覆盖第一纳米线层的第二纳米线层和覆盖第二纳米线层的第三层纳米线。第一解复用器被配置为寻址每个交叉列阵列的纳米线的第一层中的纳米线，第二解复用器被配置为寻址每个交叉列阵列的第二纳米线层中的纳米线，并且第三解复用器被配置为向纳米线在每个交叉列阵列的第三层纳米线中。

2. 发明申请

US20080237886A1 Three-dimensional crossbar array systems and methods for writing information to and reading information stored in three-dimensional crossbar array junctions 有权
标题翻译：用于将信息写入和读取存储在三维交叉列阵列结点中的信息的三维交叉列阵列系统和方法
公开(公告)号：US20080237886A1
公开(公告)日：2008-10-02
申请号：US11729228
申请日：2007-03-28
申请人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
发明人： Wei Wu , R. Stanley Williams , Warren Robinett , Gregory S. Snider , Zhaoning Yu , Shih-Yuan Wang , Duncan Stewart
IPC分类号： H01L23/48
CPC分类号： H01L27/101 , B82Y10/00 , G11C13/00 , G11C13/0023 , G11C13/0033 , G11C2213/71 , G11C2213/79 , G11C2213/81 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Various embodiments of the present invention are directed to three-dimensional crossbar arrays. In one aspect of the present invention, a three-dimensional crossbar array includes a plurality of crossbar arrays, a first demultiplexer, a second demultiplexer, and a third demultiplexer. Each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, and a third layer of nanowires overlaying the second layer of nanowires. The first demultiplexer is configured to address nanowires in the first layer of nanowires of each crossbar array, the second demultiplexer is configured to address nanowires in the second layer of nanowires of each crossbar array, and the third demultiplexer is configured to supply a signal to the nanowires in the third layer of nanowires of each crossbar array.
摘要翻译：本发明的各种实施例涉及三维横杆阵列。在本发明的一个方面，三维交叉开关阵列包括多个交叉开关阵列，第一解复用器，第二解复用器和第三解复用器。每个横杆阵列包括第一纳米线层，覆盖第一纳米线层的第二纳米线层和覆盖第二纳米线层的第三层纳米线。第一解复用器被配置为寻址每个交叉列阵列的纳米线的第一层中的纳米线，第二解复用器被配置为寻址每个交叉列阵列的第二纳米线层中的纳米线，并且第三解复用器被配置为向纳米线在每个交叉列阵列的第三层纳米线中。

3. 发明授权

US07613538B2 Compensation for distortion in contact lithography 失效
标题翻译：接触光刻中的失真补偿
公开(公告)号：US07613538B2
公开(公告)日：2009-11-03
申请号：US11492365
申请日：2006-07-24
申请人： Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
发明人： Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： G06F19/00 , G06F7/00 , G01R23/20 , H03K4/90 , G21K5/00 , G02F1/1335
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.
摘要翻译：接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。接触光刻系统包括设计子系统，被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统，被配置为修改数据以补偿由分析子系统识别的一个或多个失真。

4. 发明申请

US20080021587A1 Compensation for distortion in contact lithography 失效
标题翻译：接触光刻中的失真补偿
公开(公告)号：US20080021587A1
公开(公告)日：2008-01-24
申请号：US11492365
申请日：2006-07-24
申请人： Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
发明人： Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： G06F17/50 , G06F19/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.
摘要翻译：接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。接触光刻系统包括设计子系统，被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统，被配置为修改数据以补偿由分析子系统识别的一个或多个失真。

5. 发明授权

US08244134B2 Optical interconnect 有权
标题翻译：光互连
公开(公告)号：US08244134B2
公开(公告)日：2012-08-14
申请号：US11820310
申请日：2007-06-19
申请人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
发明人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
IPC分类号： H04J14/02 , H04B10/00
CPC分类号： H04B10/803 , G02B6/4206 , G02B6/43
摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.
摘要翻译：光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器第二个镜头。

6. 发明申请

US20080317406A1 Optical interconnect 有权
标题翻译：光互连
公开(公告)号：US20080317406A1
公开(公告)日：2008-12-25
申请号：US11820310
申请日：2007-06-19
申请人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
发明人： Charles Santori , David Fattal , Wei Wu , Robert Bicknell , Shih-Yuan Wang , R. Stanley Williams , Duncan Stewart , Nathaniel Quitoriano , Raymond Beausoleil
IPC分类号： G02B6/28
CPC分类号： H04B10/803 , G02B6/4206 , G02B6/43
摘要： An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.
摘要翻译：光学互连具有多个光源，第一透镜被配置为准直来自多个光源的光束，配置成重新聚焦光束的第二透镜以及被配置为从所述光源接收重新聚焦的光束的多个光学接收器第二个镜头。

7. 发明授权

US07319416B2 Tunneling-resistor-junction-based microscale/nanoscale demultiplexer arrays 失效
标题翻译：基于隧道电阻器结的微米级/纳米级解复用器阵列
公开(公告)号：US07319416B2
公开(公告)日：2008-01-15
申请号：US11343325
申请日：2006-01-30
申请人： Warren Robinett , Gregory S. Snider , Duncan Stewart , Joseph Straznicky
发明人： Warren Robinett , Gregory S. Snider , Duncan Stewart , Joseph Straznicky
IPC分类号： H03M7/14
CPC分类号： G11C8/10 , G11C13/0023 , H03M13/51
摘要： Various embodiments of the present invention are directed to demultiplexers that include tunneling resistor nanowire junctions, and to nanowire addressing methods for reliably addressing nanowire signal lines in nanoscale and mixed-scale demultiplexers. In one embodiment of the present invention, an encoder-demultiplexer comprises a number of input signal lines and an encoder that generates an n-bit-constant-weight-code code-word internal address for each different input address received on the input signal lines. The encoder-demultiplexer includes n microscale signal lines on which an n-bit-constant-weight-code code-word internal address is output by the encoder, where each microscale signal line carries one bit of the n-bit-constant-weight-code code-word internal address. The encoder-demultiplexer also includes a number of encoder-demultiplexer-addressed nanowire signal lines interconnected with the n microscale signal lines via tunneling resistor junctions, the encoder-demultiplexer-addressed nanowire signal lines each associated with an n-bit-constant-weight-code code-word internal address.
摘要翻译：本发明的各种实施例涉及包括隧穿电阻器纳米线结的解复用器，以及纳米线寻址方法，用于在纳米尺度和混合尺度解复用器中可靠地寻址纳米线信号线。在本发明的一个实施例中，编码器 - 解复用器包括多个输入信号线和一个编码器，其生成在输入信号线上接收的每个不同输入地址的n位恒权重码码字内部地址。编码器 - 解复用器包括n个微米级信号线，编码器输出n位恒定权重码码字内部地址，其中每个微信号线承载n位恒权重码内部地址的一位，代码字内部地址。编码器 - 解复用器还包括通过隧道电阻器结与n个微米级信号线互连的多个编码器 - 解复用器寻址的纳米线信号线，编码器 - 解复用器寻址的纳米线信号线每个与n比特恒权重信号线相关联，代码字内部地址。

8. 发明授权

US07833842B2 Mixed-scale electronic interface 失效
标题翻译：混合电子接口
公开(公告)号：US07833842B2
公开(公告)日：2010-11-16
申请号：US12630076
申请日：2009-12-03
申请人： R. Stanley Williams , Gregory S. Snider , Duncan Stewart
发明人： R. Stanley Williams , Gregory S. Snider , Duncan Stewart
IPC分类号： H01L21/82
CPC分类号： H01L29/0665 , B82Y10/00 , G11C2213/81 , H01H1/0094 , H01L27/285 , H01L29/0673 , H01L29/0676 , H01L51/0591 , H01L51/0595
摘要： Embodiments of the present invention are directed to mixed-scale electronic interfaces, included in integrated circuits and other electronic devices, that provide for dense electrical interconnection between microscale features of a predominantly microscale or submicroscale layer and nanoscale features of a predominantly nanoscale layer. A method is provided for fabricating a nanoscale/microscale interface having a microscale layer and a predominantly nanoscale layer.
摘要翻译：本发明的实施例涉及包括在集成电路和其他电子设备中的混合比例电子接口，其提供主要是微米级或亚微米级的微尺度特征之间的密集电互连以及主要为纳米尺度层的纳米尺度特征。提供了一种用于制造具有微米级和主要为纳米尺度层的纳米尺度/微米界面的方法。

9. 发明申请

US20100081238A1 MIXED-SCALE ELECTRONIC INTERFACE 失效
标题翻译：混合尺寸电子接口
公开(公告)号：US20100081238A1
公开(公告)日：2010-04-01
申请号：US12630076
申请日：2009-12-03
申请人： R. Stanley Williams , Gregory S. Snider , Duncan Stewart
发明人： R. Stanley Williams , Gregory S. Snider , Duncan Stewart
IPC分类号： H01L21/77
CPC分类号： H01L29/0665 , B82Y10/00 , G11C2213/81 , H01H1/0094 , H01L27/285 , H01L29/0673 , H01L29/0676 , H01L51/0591 , H01L51/0595
摘要： Embodiments of the present invention are directed to mixed-scale electronic interfaces, included in integrated circuits and other electronic devices, that provide for dense electrical interconnection between microscale features of a predominantly microscale or submicroscale layer and nanoscale features of a predominantly nanoscale layer. A method is provided for fabricating a nanoscale/microscale interface having a microscale layer and a predominantly nanoscale layer.
摘要翻译：本发明的实施例涉及包括在集成电路和其他电子设备中的混合比例电子接口，其提供主要是微米级或亚微米级的微尺度特征之间的密集电互连以及主要为纳米尺度层的纳米尺度特征。提供了一种用于制造具有微米级和主要为纳米尺度层的纳米尺度/微米界面的方法。

10. 发明授权

US07692215B2 Mixed-scale electronic interface 有权
标题翻译：混合电子接口
公开(公告)号：US07692215B2
公开(公告)日：2010-04-06
申请号：US11701086
申请日：2007-01-31
申请人： R. Stanley Williams , Gregory S. Snider , Duncan Stewart
发明人： R. Stanley Williams , Gregory S. Snider , Duncan Stewart
IPC分类号： H01L27/10 , H01L29/73
CPC分类号： H01L29/0665 , B82Y10/00 , G11C2213/81 , H01H1/0094 , H01L27/285 , H01L29/0673 , H01L29/0676 , H01L51/0591 , H01L51/0595
摘要： Embodiments of the present invention are directed to mixed-scale electronic interfaces, included in integrated circuits and other electronic devices, that provide for dense electrical interconnection between microscale features of a predominantly microscale or submicroscale layer and nanoscale features of a predominantly nanoscale layer. The predominantly nanoscale layer, in one embodiment of the present invention, comprises a tessellated pattern of submicroscale or microscale pads densely interconnected by nanowire junctions between sets of parallel, closely spaced nanowire bundles. The predominantly submicroscale or microscale layer includes pins positioned complementarily to the submicroscale or microscale pads in the predominantly nanoscale layer. Pins can be configured according to any periodic tiling of the microscale layer.
摘要翻译：本发明的实施例涉及包括在集成电路和其他电子设备中的混合比例电子接口，其提供主要是微米级或亚微米级的微尺度特征之间的密集电互连以及主要为纳米尺度层的纳米尺度特征。在本发明的一个实施方案中，主要是纳米尺度层包括通过平行的，紧密间隔的纳米线束组之间的纳米线结密合地互连的亚微米级或微米级的镶嵌图案。主要是亚微米级或微尺度层包括与主要是纳米级层中的亚微米级或微尺度焊盘互补定位的引脚。引脚可以根据微层的任何周期性平铺进行配置。

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