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1. 发明专利

JP2004105158A Planting pot capable of adjusting ventilation amount and water-discharging quantity 审中-公开
公开(公告)号：JP2004105158A
公开(公告)日：2004-04-08
申请号：JP2002307642
申请日：2002-09-13
申请人： Nobuhiko Kobayashi , 小林延比古
发明人： KOBAYASHI NOBUHIKO
IPC分类号： A01G9/02
摘要： PROBLEM TO BE SOLVED: To provide a planting pot with a cover on the pot main body, capable of adjusting ventilation and water discharge.
SOLUTION: This planting pot is constituted by installing ventilation/water discharge ports (2) and non-ventilation/non-discharge water parts (3) alternately on the wall surface of a planting pot main body (1), and also installing similar state matter on a plant cover (4) surrounding the same. After mounting the pot cover (4) on the pot main body (1), as necessary, by rotating or letting up and down the plant cover (4), the opening areas of the ventilation/water discharge ports (2) can be increased or decreased.
COPYRIGHT: (C)2004,JPO

2. 发明授权

US09559231B2 Photovoltaic nanowire structures and related fabrication methods 有权
标题翻译：光伏纳米线结构及相关制造方法
公开(公告)号：US09559231B2
公开(公告)日：2017-01-31
申请号：US13821963
申请日：2011-09-09
申请人： Shih-Ping Wang , Yu-Min Houng , Nobuhiko Kobayashi
发明人： Shih-Ping Wang , Yu-Min Houng , Nobuhiko Kobayashi
IPC分类号： H01L31/0352 , H01L21/02 , H01L31/0392 , H01L31/075 , H01L31/18 , H01L31/20
CPC分类号： H01L31/035236 , H01L21/02521 , H01L21/02603 , H01L21/02639 , H01L21/02664 , H01L31/035227 , H01L31/03921 , H01L31/075 , H01L31/18 , H01L31/1804 , H01L31/206 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend outwardly from a surface layer of a substrate, each PV nanowire having a root end near the substrate surface layer and a tip end opposite the root end. For some embodiments, a collar material is formed that laterally surrounds and is in contact with the PV nanowires along a portion of one or more of their ends. According to some embodiments, the PV nanowires are formed on a crystalline silicon substrate. According to some other embodiments, the PV nanowires are formed on a roll-sourced continuous substrate.
摘要翻译：描述了基于纳米线的光能转换装置及其制造方法。多个光伏（PV）纳米线从衬底的表面层向外延伸，每个PV纳米线具有靠近衬底表面层的根端和与根端相对的尖端。对于一些实施例，形成轴环材料，其横向包围并沿其一个或多个端部的一部分与PV纳米线接触。根据一些实施例，PV纳米线形成在晶体硅衬底上。根据一些其他实施方案，PV纳米线形成在辊源连续基材上。

3. 发明授权

US09059344B2 Nanowire-based photovoltaic energy conversion devices and related fabrication methods 有权
标题翻译：基于纳米线的光伏能量转换器件及相关制造方法
公开(公告)号：US09059344B2
公开(公告)日：2015-06-16
申请号：US13261289
申请日：2010-08-23
申请人： Shih-Ping Wang , Nobuhiko Kobayashi , Yu-Min Houng
发明人： Shih-Ping Wang , Nobuhiko Kobayashi , Yu-Min Houng
IPC分类号： H01L31/0224 , H01L31/0352
CPC分类号： H01L31/035227
摘要： Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend outwardly from a surface layer of a substrate, each PV nanowire having a root end near the substrate surface layer and a tip end opposite the root end. For one preferred embodiment, a canopy-style tip-side electrode layer contacts the tip ends of the PV nanowires and is separated from the substrate surface layer by an air gap layer, the PV nanowires being disposed within the air gap layer. For another preferred embodiment, a tip-side electrode layer is disposed upon a layer of optically transparent, electrically insulating solid filler material that laterally surrounds the PV nanowires along a portion of their lengths, wherein an air gap is disposed between the solid filler layer and the substrate surface layer. Methods for fabricating the nanowire-based photovoltaic energy conversion devices are also described.
摘要翻译：描述了基于纳米线的光能转换装置及其制造方法。多个光伏（PV）纳米线从衬底的表面层向外延伸，每个PV纳米线具有靠近衬底表面层的根端和与根端相对的尖端。对于一个优选实施例，冠盖式末端侧电极层接触PV纳米线的末端，并通过气隙层与衬底表面层分离，PV纳米线设置在气隙层内。对于另一个优选实施例，尖端侧电极层设置在沿其长度的一部分横向围绕PV纳米线的光学透明的电绝缘固体填充材料层上，其中气隙设置在固体填充层和衬底表面层。还描述了制造基于纳米线的光能转换装置的方法。

4. 发明申请

US20140034120A1 PHOTOVOLTAIC NANOWIRE STRUCTURES AND RELATED FABRICATION METHODS 有权
标题翻译：光伏纳米结构和相关制造方法
公开(公告)号：US20140034120A1
公开(公告)日：2014-02-06
申请号：US13821963
申请日：2011-09-09
申请人： Shih-Ping Wang , Yu-Min Houng , Nobuhiko Kobayashi
发明人： Shih-Ping Wang , Yu-Min Houng , Nobuhiko Kobayashi
IPC分类号： H01L31/0352 , H01L31/18
CPC分类号： H01L31/035236 , H01L21/02521 , H01L21/02603 , H01L21/02639 , H01L21/02664 , H01L31/035227 , H01L31/03921 , H01L31/075 , H01L31/18 , H01L31/1804 , H01L31/206 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend outwardly from a surface layer of a substrate, each PV nanowire having a root end near the substrate surface layer and a tip end opposite the root end. For some embodiments, a collar material is formed that laterally surrounds and is in contact with the PV nanowires along a portion of one or more of their ends. According to some embodiments, the PV nanowires are formed on a crystalline silicon substrate. According to some other embodiments, the PV nanowires are formed on a roll-sourced continuous substrate.
摘要翻译：描述了基于纳米线的光能转换装置及其制造方法。多个光伏（PV）纳米线从衬底的表面层向外延伸，每个PV纳米线具有靠近衬底表面层的根端和与根端相对的尖端。对于一些实施例，形成轴环材料，其横向包围并沿其一个或多个端部的一部分与PV纳米线接触。根据一些实施例，PV纳米线形成在晶体硅衬底上。根据一些其他实施方案，PV纳米线形成在辊源连续基材上。

5. 发明申请

US20110249322A1 Nanowire-based opto-electronic device 有权
标题翻译：基于纳米线的光电器件
公开(公告)号：US20110249322A1
公开(公告)日：2011-10-13
申请号：US11790446
申请日：2007-04-25
申请人： Shih-Yuan Wang , M. Saif Islam , Philip J. Kuekes , Nobuhiko Kobayashi
发明人： Shih-Yuan Wang , M. Saif Islam , Philip J. Kuekes , Nobuhiko Kobayashi
IPC分类号： H01S5/20 , H01L29/06
CPC分类号： H01S5/341 , B82Y20/00 , H01L31/035281 , H01L31/09 , H01L31/1025 , H01S5/021 , H01S5/125 , H01S5/3412 , H01S5/4031 , H01S5/5018 , H01S5/5072 , H01S2301/14 , Y02E10/50 , Y10S977/762
摘要： Nanowire-based opto-electronic devices including nanowire lasers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by a signal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires that can provide different polarizations.
摘要翻译：公开了包括纳米线激光器，光电检测器和半导体光放大器的基于纳米线的光电器件。这些器件包括从单晶和/或非单一表面生长的纳米线。半导体光放大器包括用作镇流器激光器以放大由信号波导承载的信号的纳米线阵列。纳米线激光器和光电检测器的实施例包括可以提供不同偏振的水平和垂直的纳米线。

6. 发明申请

US20110023948A1 SOLAR CELL EMPLOYING A NANOWIRE 有权
标题翻译：使用纳米级的太阳能电池
公开(公告)号：US20110023948A1
公开(公告)日：2011-02-03
申请号：US12815590
申请日：2010-07-19
申请人： Shih-Yuan Wang , Nobuhiko KOBAYASHI
发明人： Shih-Yuan Wang , Nobuhiko KOBAYASHI
IPC分类号： H01L31/0256 , H01L31/0224 , H01L31/0304 , H01L31/0296
CPC分类号： H01L33/08 , B82Y10/00 , B82Y20/00 , H01L29/0665 , H01L29/0673 , H01L31/035236 , H01L33/06
摘要： One embodiment in accordance with the invention is a solar cell comprising a non-single crystal substrate; a nanowire grown from a surface of the non-single crystal substrate; and an electrode coupled to the nanowire, wherein the nanowire is electrically conductive and is for absorbing electromagnetic wave and generating a current.
摘要翻译：根据本发明的一个实施例是包括非单晶衬底的太阳能电池; 从非单晶衬底的表面生长的纳米线; 以及耦合到所述纳米线的电极，其中所述纳米线是导电的并且用于吸收电磁波并产生电流。

7. 发明申请

US20090302925A1 ORTHOGONAL SIGNAL OUTPUT CIRCUIT 有权
标题翻译：正交信号输出电路
公开(公告)号：US20090302925A1
公开(公告)日：2009-12-10
申请号：US12404446
申请日：2009-03-16
申请人： Kazuaki Oishi , Nobuhiko Kobayashi , Masahiro Kudo
发明人： Kazuaki Oishi , Nobuhiko Kobayashi , Masahiro Kudo
IPC分类号： G06G7/14
CPC分类号： G06G7/14 , H03D3/009 , H03D7/14 , H03D2200/0082
摘要： An orthogonal signal output circuit having an error correction function for correcting an orthogonal error, including: first and second differential circuits; and first to fourth variable resistors, wherein the first variable resistor is connected to a positive output of the first differential circuit and a positive output of the second differential circuit; the second variable resistor is connected to the positive output of the first differential circuit and a negative output of the second differential circuit; the third variable resistor is connected to a negative output of the first differential circuit and the positive output of the second differential circuit; and the fourth variable resistor is connected to the negative output of the first differential circuit and the negative output of the second differential circuit.
摘要翻译：一种具有用于校正正交误差的纠错功能的正交信号输出电路，包括：第一和第二差分电路; 和第一至第四可变电阻器，其中第一可变电阻器连接到第一差分电路的正输出端和第二差分电路的正输出端; 第二可变电阻器连接到第一差分电路的正输出端和第二差分电路的负输出端; 第三可变电阻器连接到第一差分电路的负输出端和第二差分电路的正输出端; 并且第四可变电阻器连接到第一差分电路的负输出端和第二差分电路的负输出端。

8. 发明授权

US07608530B2 Hetero-crystalline structure and method of making same 失效
标题翻译：异质结构及其制备方法
公开(公告)号：US07608530B2
公开(公告)日：2009-10-27
申请号：US11681080
申请日：2007-03-01
申请人： Nobuhiko Kobayashi , Shih Yuan Wang
发明人： Nobuhiko Kobayashi , Shih Yuan Wang
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/0237 , H01L21/02601 , H01L21/02603 , H01L21/02606 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/068 , H01L33/005 , H01L33/18 , Y10S977/79 , Y10S977/825
摘要： A hetero-crystalline device structure and a method of making the same include a first layer and a nanostructure integral to a crystallite in the first layer. The first layer is a non-single crystalline material. The nanostructure is a single crystalline material. The nanostructure is grown on the first layer integral to the crystallite using epitaxial growth.
摘要翻译：异质器件结构及其制造方法包括与第一层中的微晶成一体的第一层和纳米结构。第一层是非单晶材料。纳米结构是单晶材料。使用外延生长在纳米结构生长在与微晶成为一体的第一层上。

9. 发明申请

US20090188544A1 Nanowire-Based Device And Array With Coaxial Electrodes 有权
标题翻译：基于纳米线的器件和阵列与同轴电极
公开(公告)号：US20090188544A1
公开(公告)日：2009-07-30
申请号：US12247860
申请日：2008-10-08
申请人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
发明人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
IPC分类号： H01L31/00
CPC分类号： H01L31/109 , B82Y20/00 , G02B5/003 , H01L31/022425 , H01L31/035227 , H01L31/0543 , H01L31/072 , Y02E10/52
摘要： A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.
摘要翻译：基于纳米线的光子器件和阵列采用沿着电极的垂直范围以不均匀方式连接在同轴布置的电极之间的纳米线。该装置包括由圆周间隙分开的一对电极。纳米线从该对的内部电极混沌地发出并且跨越圆周间隙连接到该对的外部电极。该阵列包括外部电极，其具有电池和内部电极的互连图案，每个电池单元与外部电极同轴地布置并与外部电极分开，并由其间隔开。纳米线从内部电极混沌地发散并且跨过电池的各个周向间隙连接到外部电极。器件和阵列还包括电极之间的半导体结。

10. 发明申请

US20080237568A1 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures 有权
标题翻译：具有受控尺寸的纳米级结构的方法，纳米线结构以及制造纳米线结构的方法
公开(公告)号：US20080237568A1
公开(公告)日：2008-10-02
申请号：US11730486
申请日：2007-04-02
申请人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
发明人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L31/035281 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L31/036 , H01L31/09 , H01L31/101 , H01L31/105 , Y02E10/50 , Y10S977/762 , Y10S977/814
摘要： Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
摘要翻译：公开了制备具有受控尺寸的纳米级半导体结构的方法。还公开了包括一个或多个纳米线的半导体结构。纳米线可以包括钝化层或具有中空管结构。

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