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41. 发明申请

US20050040486A1 Electrostatic RF MEMS switches 有权
标题翻译：静电RF MEMS开关
公开(公告)号：US20050040486A1
公开(公告)日：2005-02-24
申请号：US10951612
申请日：2004-09-29
申请人： In-sang Song , Young-il Kim , Moon-chul Lee , Dong-ha Shim , Young-tack Hong , Sun-hee Park , Kuang-woo Nam
发明人： In-sang Song , Young-il Kim , Moon-chul Lee , Dong-ha Shim , Young-tack Hong , Sun-hee Park , Kuang-woo Nam
IPC分类号： B81B3/00 , H01H57/00 , H01H59/00 , H01L29/417 , H01L41/09 , H01P1/12 , H01L21/76
CPC分类号： H01P1/127 , H01H57/00 , H01H59/0009 , H01H2057/006
摘要： A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.
摘要翻译：一种具有介电层的微型开关，具有形成在基板上的移动区域，形成在所述移动区域的预定部分上的导电层，形成在所述导电层上的电介质膜，在所述电介质上形成预定距离的第一和第二导电体膜，形成在移动区域上的一个或两个下电极，以及在两个下电极之上形成预定距离的一个或两个上电极，一个或两个上电极在静电力发生时向上移动导电层和电介质膜上电极和下电极，并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。这种微型开关具有高的开/关比和隔离度和简单的结构，并且可以在非常容易的过程中制造。

42. 发明申请

US20050034822A1 Method for fabricating cantilevered type film bulk acoustic resonator and film bulk acoustic resonator fabricated by the same 有权
标题翻译：用于制造悬臂型膜体声波谐振器的方法和由其制造的膜体声波谐振器
公开(公告)号：US20050034822A1
公开(公告)日：2005-02-17
申请号：US10827532
申请日：2004-04-20
申请人： Sang-chae Kim , In-sang Song , Young-tack Hong
发明人： Sang-chae Kim , In-sang Song , Young-tack Hong
IPC分类号： H01L41/09 , H01L41/02 , H01L41/08 , H01L41/18 , H01L41/187 , H01L41/22 , H01L41/23 , H01L41/253 , H03H3/02 , H03H3/04 , H03H9/17 , B01D1/22
CPC分类号： H03H3/02 , H03H9/172 , H03H2003/022 , Y10T29/42 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156
摘要： A method for fabricating a film bulk acoustic resonator (FBAR) includes depositing a dielectric layer on a substrate, providing a sacrificial layer on part of the dielectric layer; providing a bottom electrode on part of the sacrificial layer on part of the dielectric layer; providing a piezoelectric layer on the bottom electrode; patterning a top electrode on the piezoelectric layer; and removing the sacrificial layer. The substrate may have a cavity receiving the sacrificial layer. As a result, a cantilevered resonator having an air gap between the bottom electrode and the dielectric layer may be simply fabricated.
摘要翻译：一种制造薄膜体声波谐振器（FBAR）的方法包括在基片上沉积介电层，在介电层的一部分上提供牺牲层; 在所述电介质层的一部分上的所述牺牲层的一部分上提供底部电极; 在底部电极上提供压电层; 图案化压电层上的顶部电极; 并去除牺牲层。衬底可以具有容纳牺牲层的空腔。结果，可以简单地制造在底部电极和电介质层之间具有气隙的悬臂谐振器。

43. 发明授权

US07169684B2 Device having inductors and capacitors and a fabrication method thereof 失效
标题翻译：具有电感器和电容器的装置及其制造方法
公开(公告)号：US07169684B2
公开(公告)日：2007-01-30
申请号：US10373735
申请日：2003-02-27
申请人： Moon-chul Lee , In-sang Song , Young-tack Hong , Sung-hye Jeong , Jeong-yoo Hong
发明人： Moon-chul Lee , In-sang Song , Young-tack Hong , Sung-hye Jeong , Jeong-yoo Hong
IPC分类号： H01L21/30
CPC分类号： H01L27/016 , H01L23/5223 , H01L23/5227 , H01L27/0744 , H01L28/10 , H01L28/40 , H01L2924/0002 , H03H7/00 , H03H7/0115 , H03H2001/0078 , H03H2001/0085 , H05K1/16 , H05K1/162 , H05K1/165 , H05K2201/1006 , H05K2201/10545 , Y10S438/977 , H01L2924/00
摘要： An LC device having a substrate, a support layer having upper and lower sides formed on the substrate, inductors formed on either the upper or lower side of the support layer, and capacitors formed in the opposite side of the support layer. The support layer may be formed of a low-k dielectric material, and a connection portion may be provided to connect the inductors and capacitors in the support layer. The inductors and capacitors are disposed in a stacked structure on the upper and lower sides of the low-k dielectric support layer on the substrate, so that space efficiency may be maximized on the substrate. The low-k dielectric support layer provides support between the inductors and capacitors so that substrate loss is minimized and a Q factor of the inductors is enhanced.
摘要翻译：具有衬底的LC器件，在衬底上形成有上下侧的支撑层，形成在支撑层的上侧或下侧的电感器以及形成在支撑层的相对侧的电容器。支撑层可以由低k介电材料形成，并且可以提供连接部分来连接支撑层中的电感器和电容器。电感器和电容器以堆叠的结构设置在衬底上的低k电介质支撑层的上侧和下侧，使得在衬底上空间效率最大化。低k电介质支撑层提供电感器和电容器之间的支撑，使得衬底损耗最小化并且电感器的Q因数增强。

44. 发明申请

US20060012940A1 MEMS RF-switch using semiconductor 失效
标题翻译：使用半导体的MEMS射频开关
公开(公告)号：US20060012940A1
公开(公告)日：2006-01-19
申请号：US11179460
申请日：2005-07-13
申请人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
发明人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
IPC分类号： H01L21/683
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
摘要翻译：提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

45. 发明申请

US20100133077A1 MEMS RF-SWITCH USING SEMICONDUCTOR 失效
公开(公告)号：US20100133077A1
公开(公告)日：2010-06-03
申请号：US12697629
申请日：2010-02-01
申请人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
发明人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
摘要翻译：提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

46. 发明申请

US20100132174A1 METHOD OF MANUFACTURING FILM BULK ACOUSTIC RESONATOR USING INTERNAL STRESS OF METALLIC FILM AND RESONATOR MANUFACTURED THEREBY 有权
标题翻译：使用金属膜内部应力和制造的谐振器制造薄膜泡沫谐振器的方法
公开(公告)号：US20100132174A1
公开(公告)日：2010-06-03
申请号：US12684454
申请日：2010-01-08
申请人： Jong-seok KIM , Sung-hoon Choa , In-sang Song , Young-tack Hong
发明人： Jong-seok KIM , Sung-hoon Choa , In-sang Song , Young-tack Hong
IPC分类号： H01L41/22
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/172 , Y10T29/42
摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.
摘要翻译：一种制造薄膜体声波谐振器的方法和由此制造的谐振器。该方法包括在半导体衬底上层叠牺牲层，从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触，通过在下电极上沉积金属膜形成下电极牺牲层，通过基于牺牲层的形状进行图案化，通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层，并且通过将金属膜沉积在上而形成上电极压电层和基于压电层的形状的图案化，其中当沉积用于下电极的金属膜时，沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

47. 发明授权

US07671427B2 Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby 有权
标题翻译：使用金属膜的内部应力和由此制造的谐振器制造膜体声波谐振器的方法
公开(公告)号：US07671427B2
公开(公告)日：2010-03-02
申请号：US10838326
申请日：2004-05-05
申请人： Jong-seok Kim , Sung-hoon Choa , In-sang Song , Young-tack Hong
发明人： Jong-seok Kim , Sung-hoon Choa , In-sang Song , Young-tack Hong
IPC分类号： H01L47/00
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/172 , Y10T29/42
摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.
摘要翻译：一种制造薄膜体声波谐振器的方法和由此制造的谐振器。该方法包括在半导体衬底上层叠牺牲层，从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触，通过在下电极上沉积金属膜形成下电极牺牲层，通过基于牺牲层的形状进行图案化，通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层，并且通过将金属膜沉积在上而形成上电极压电层和基于压电层的形状的图案化，其中当沉积用于下电极的金属膜时，沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

48. 发明授权

US07939356B2 Method of manufacturing film bulk acoustic resonator using internal stress of metallic film and resonator manufactured thereby 有权
标题翻译：使用金属膜的内部应力和由此制造的谐振器制造膜体声波谐振器的方法
公开(公告)号：US07939356B2
公开(公告)日：2011-05-10
申请号：US12684454
申请日：2010-01-08
申请人： Jong-seok Kim , Sung-hoon Choa , In-sang Song , Young-tack Hong
发明人： Jong-seok Kim , Sung-hoon Choa , In-sang Song , Young-tack Hong
IPC分类号： H01L21/00
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/172 , Y10T29/42
摘要： A method of manufacturing a film bulk acoustic resonator and the resonator manufactured thereby. The method includes the laminating a sacrificial layer on a semiconductor substrate, removing a predetermined area from the sacrificial layer to realize electric contact between a signal line of the semiconductor substrate and a lower electrode, forming the lower electrode by depositing metal film for lower electrode on the sacrificial layer, by patterning based on a shape of the sacrificial layer, forming a piezoelectric layer by depositing a piezoelectric material on the lower electrode and by patterning based on a shape of the lower electrode, and forming an upper electrode by depositing metal film on the piezoelectric layer and by patterning based on a shape of the piezoelectric layer, wherein at least one of a deposition pressure and a deposition power is controlled to generate upward stress when depositing the metal film for the lower electrode.
摘要翻译：一种制造薄膜体声波谐振器的方法和由此制造的谐振器。该方法包括在半导体衬底上层叠牺牲层，从牺牲层去除预定区域以实现半导体衬底的信号线与下电极之间的电接触，通过在下电极上沉积金属膜形成下电极牺牲层，通过基于牺牲层的形状进行图案化，通过在下电极上沉积压电材料并基于下电极的形状进行图案化形成压电层，并且通过将金属膜沉积在上而形成上电极压电层和基于压电层的形状的图案化，其中当沉积用于下电极的金属膜时，沉积压力和沉积功率中的至少一个被控制以产生向上的应力。

49. 发明授权

US07911300B2 MEMS RF-switch using semiconductor 失效
标题翻译：使用半导体的MEMS射频开关
公开(公告)号：US07911300B2
公开(公告)日：2011-03-22
申请号：US12697629
申请日：2010-02-01
申请人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
发明人： Il-jong Song , Dong-ha Shim , Hyung-jae Shin , Soon-cheol Kweon , Che-heung Kim , Sang-hun Lee , Young-tack Hong
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01H2059/0018
摘要： A MEMS RF-switch is provided for controlling switching on/off of transmission of AC signals. The MEMS RF-switch of the present invention includes: a first electrode coupled to one terminal of the power source; a semiconductor layer combined with an upper surface of the first electrode, and forming a potential barrier to become insulated when a bias signal is applied from the power source; and a second electrode disposed at a predetermined distance away from the semiconductor layer, and being coupled to the other terminal of the power source, wherein the second electrode contacts the semiconductor layer when a bias signal is applied from the power source. Therefore, although the bias signal may not be cut off, free electrons and holes are recombined in the semiconductor layer, whereby charge buildup and sticking can be prevented.
摘要翻译：提供了用于控制AC信号的传输的接通/断开的MEMS RF开关。本发明的MEMS RF开关包括：耦合到电源的一个端子的第一电极; 与所述第一电极的上表面组合的半导体层，并且当从所述电源施加偏置信号时，形成电位势垒以变得绝缘; 以及第二电极，设置在距离半导体层预定距离处，并且耦合到电源的另一个端子，其中当从电源施加偏置信号时，第二电极接触半导体层。因此，尽管偏置信号可能不会被切断，但自由电子和空穴在半导体层中重新结合，从而可以防止电荷积累和粘附。

50. 发明申请

US20070115702A1 Device having inductors and capacitors 失效
标题翻译：器件有电感和电容
公开(公告)号：US20070115702A1
公开(公告)日：2007-05-24
申请号：US11655915
申请日：2007-01-22
申请人： Moon-chul Lee , In-sang Song , Young-tack Hong , Sung-hye Jeong , Jeong-yoo Hong , Byung-yoo Hong
发明人： Moon-chul Lee , In-sang Song , Young-tack Hong , Sung-hye Jeong , Jeong-yoo Hong , Byung-yoo Hong
IPC分类号： H02M1/14
CPC分类号： H01L27/016 , H01L23/5223 , H01L23/5227 , H01L27/0744 , H01L28/10 , H01L28/40 , H01L2924/0002 , H03H7/00 , H03H7/0115 , H03H2001/0078 , H03H2001/0085 , H05K1/16 , H05K1/162 , H05K1/165 , H05K2201/1006 , H05K2201/10545 , Y10S438/977 , H01L2924/00
摘要： An LC device having a substrate, a support layer having upper and lower sides formed on the substrate, inductors formed on either the upper or lower side of the support layer, and capacitors formed in the opposite side of the support layer. The support layer may be formed of a low-k dielectric material, and a connection portion may be provided to connect the inductors and capacitors in the support layer. The inductors and capacitors are disposed in a stacked structure on the upper and lower sides of the low-k dielectric support layer on the substrate, so that space efficiency may be maximized on the substrate. The low-k dielectric support layer provides support between the inductors and capacitors so that substrate loss is minimized and a Q factor of the inductors is enhanced.
摘要翻译：具有衬底的LC器件，在衬底上形成有上下侧的支撑层，形成在支撑层的上侧或下侧的电感器以及形成在支撑层的相对侧的电容器。支撑层可以由低k介电材料形成，并且可以提供连接部分来连接支撑层中的电感器和电容器。电感器和电容器以堆叠的结构设置在衬底上的低k电介质支撑层的上侧和下侧，使得在衬底上空间效率最大化。低k电介质支撑层提供电感器和电容器之间的支撑，使得衬底损耗最小化并且电感器的Q因数增强。

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