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41. 发明授权

US06800419B2 Radiation-sensitive resin composition 有权
标题翻译：辐射敏感树脂组合物
公开(公告)号：US06800419B2
公开(公告)日：2004-10-05
申请号：US10369674
申请日：2003-02-21
申请人： Akimasa Soyano , Hiroyuki Ishii , Hidemitsu Ishida , Motoyuki Shima , Yukio Nishimura
发明人： Akimasa Soyano , Hiroyuki Ishii , Hidemitsu Ishida , Motoyuki Shima , Yukio Nishimura
IPC分类号： G03F7039
CPC分类号： G03F7/0397 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： A radiation-sensitive resin composition comprising: (A) an alkali insoluble or scarcely alkali-soluble resin having an acid-dissociable protecting group of the following formula [I], wherein R1 groups are monovalent alicyclic hydrocarbon groups or alkyl groups, provided that at least one of the R1 groups is the monovalent alicyclic hydrocarbon group, or any two of the R1 groups and the carbon atom form a divalent alicyclic hydrocarbon group, (B) a photoacid generator, and (C) propylene glycol monomethyl ether acetate, &ggr;-butyrolactone, and cyclohexanone as solvents. The resin composition is useful as a chemically-amplified resist for microfabrication utilizing deep ultraviolet rays and exhibits excellent film thickness uniformity and storage stability.
摘要翻译：一种辐射敏感性树脂组合物，其包含：（A）具有下式[I]的酸解离保护基的碱不溶性或几乎不溶的碱溶性树脂，其中R 1为一价脂环族烃基或烷基，条件是R 1基团中的至少一个为一价脂环族烃基，或者R 1基团和碳原子中的任何两个形成二价脂环族烃基，（B）光致酸发生剂和（C ）丙二醇单甲醚乙酸酯，γ-丁内酯和环己酮作为溶剂。树脂组合物可用作用于使用深紫外线的微细加工的化学增幅抗蚀剂，并且显示出优异的膜厚均匀性和储存稳定性。

42. 发明授权

US4928185A Rotary head type recording/reproducing method and apparatus for recording and reproducing a digital audio signal 失效
标题翻译：用于记录和再现数字音频信号的旋转头型记录/再现方法和装置
公开(公告)号：US4928185A
公开(公告)日：1990-05-22
申请号：US149171
申请日：1988-01-27
申请人： Masaharu Kobayashi , Yukio Nishimura
发明人： Masaharu Kobayashi , Yukio Nishimura
IPC分类号： G11B20/10 , G11B20/12 , G11B20/18 , H04N5/926 , H04N9/79 , H04N9/802
CPC分类号： G11B20/1809 , G11B20/1208 , H04N5/9268 , H04N9/7925 , H04N9/802
摘要： A rotary-head type magnetic tape recorder for recording a video signal and an audio signal on a magnetic tape by means of a rotary head controlled on the basis of the video signal. Difference is determined between a rate at which the digital audio signal is recorded on the recording medium and which is determined by the video signal and a rate of input data determined by a sampling frequency of the audio signal for a number N of samples of the digital signal to be included within one field period synchronized with the video signal. The number of samples for one field of input data is set by preparing on the basis of the result of detection of the difference in rate a first field containing a number of samples greater than the number N within and a second field containing a number of samples smaller than the number N. Blocks for recording the PCM audio signal on the recording medium are prepared by adding a first error detection/ correction code to the audio signal for every n symbols, while the symbols are imparted with amounts of delay differing from one another and subjected to diagonal incomplete interleave for thereby adding a second error detection/correction code. After addition of a block synchronizing signal, recording is performed on the tape. By adopting the variable fields, matching can be attained between the asynchronous audio and video signal fields. Reproduction capability notwithstanding of burst error is enhanced by incomplete diagonal interleave. Difference in time lag between the video signal and the audio signal involved in the reproduction thereof can be suppressed to a minimum.

43. 发明授权

US08697343B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition 有权
标题翻译：含氟聚合物，净化方法和辐射敏感树脂组合物
公开(公告)号：US08697343B2
公开(公告)日：2014-04-15
申请号：US12294386
申请日：2007-03-23
申请人： Hiroki Nakagawa , Hiromitsu Nakashima , Gouji Wakamatsu , Kentarou Harada , Yukio Nishimura , Takeo Shioya
发明人： Hiroki Nakagawa , Hiromitsu Nakashima , Gouji Wakamatsu , Kentarou Harada , Yukio Nishimura , Takeo Shioya
IPC分类号： G03F7/26 , G03F7/039
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0045 , G03F7/039 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/322 , G03F7/38 , G03F7/40
摘要： An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
摘要翻译：本发明的目的是提供一种含氟聚合物，其含有含氟聚合物的液浸光刻用的辐射敏感性树脂组合物，其导致具有优异形状和优异的焦深的图案，其中在液浸光刻中曝光期间与抗蚀剂接触的液体浸液式液晶等液体中的洗脱组分的量很少，并且在抗蚀剂膜和用于液浸的液体之间提供较大的后退接触角光刻法如水，以及纯化含氟聚合物的方法。本发明的树脂组合物包含含有由通式（1）和（2）表示的重复单元并具有1,000-50,000的Mw的新的含氟聚合物（A），具有酸不稳定基团的树脂（B），辐射敏感性酸产生剂（C），含氮化合物（D）和溶剂（E）。

44. 发明授权

US08507189B2 Upper layer film forming composition and method of forming photoresist pattern 有权
标题翻译：上层成膜组合物和形成光致抗蚀剂图案的方法
公开(公告)号：US08507189B2
公开(公告)日：2013-08-13
申请号：US12442377
申请日：2007-09-21
申请人： Daita Kouno , Hiromitsu Nakashima , Yukio Nishimura
发明人： Daita Kouno , Hiromitsu Nakashima , Yukio Nishimura
IPC分类号： G03F7/11 , G03F7/26
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/095 , G03F7/11 , G03F7/2041 , H01L21/0276
摘要： An upper layer film forming composition for forming an upper layer film on the surface of a photoresist film includes (A) a resin dissolvable in a developer for the photoresist film and (B) a compound having a sulfonic acid residue group, the composition forming an upper layer film with a receding contact angle to water of 70° or more. The upper layer film forming composition of the present invention can form an upper layer film which has a sufficient transparency and is stably maintained without eluting the components into a medium without being intermixed with a photoresist film, can form a resist pattern with high resolution while effectively suppressing a defect, and can suppress a blob defect.
摘要翻译：在光致抗蚀剂膜的表面上形成上层膜的上层成膜组合物包括（A）可溶于光致抗蚀剂膜的显影剂中的树脂和（B）具有磺酸残基的化合物，该组合物形成上层膜与水的后退接触角为70°以上。本发明的上层成膜组合物可以形成具有足够透明度且稳定保持的上层膜，而不将组分洗脱到介质中而不与光致抗蚀剂膜混合，可以有效地形成高分辨率的抗蚀剂图案抑制缺陷，能够抑制斑点缺陷。

45. 发明申请

US20120100480A1 COMPOUND, FLUORINE-CONTAINING POLYMER, RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING COMPOUND 有权
标题翻译：化合物，含荧光聚合物，辐射敏感性树脂组合物及其制备方法
公开(公告)号：US20120100480A1
公开(公告)日：2012-04-26
申请号：US13216209
申请日：2011-08-23
申请人： Nobuji MATSUMURA , Yuusuke Asano , Hirokazu Sakakibara , Yukio Nishimura , Takehiko Naruoka
发明人： Nobuji MATSUMURA , Yuusuke Asano , Hirokazu Sakakibara , Yukio Nishimura , Takehiko Naruoka
IPC分类号： G03F7/004 , C08F222/20 , C07C69/96
CPC分类号： C07C69/96 , C07C68/06 , C07C2601/14 , C08F220/30 , G03F7/0046 , G03F7/0392
摘要： A compound has a following general formula (1). R0 represents an (n+1)-valent linear or branched aliphatic hydrocarbon group having 1 to 10 carbon atoms, or the like. R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R2 represents a single bond or the like. R3 represent a linear or branched alkyl group having 1 to 4 carbon atoms or the like. X represents a linear or branched fluoroalkylene group having 1 to 10 carbon atoms, and n is an integer from 1 to 5.
摘要翻译：化合物具有以下通式（1）。 R 0表示具有1〜10个碳原子的（n + 1）价的直链或支链脂肪族烃基等。 R1表示氢原子，甲基或三氟甲基。 R2表示单键等。 R 3表示具有1〜4个碳原子的直链或支链烷基等。 X表示碳原子数1〜10的直链状或支链状的氟代亚烷基，n表示1〜5的整数。

46. 发明申请

US20120028198A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD 有权
标题翻译：上层成型和光电子图案方法
公开(公告)号：US20120028198A1
公开(公告)日：2012-02-02
申请号：US13272501
申请日：2011-10-13
申请人： Atsushi NAKAMURA , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
发明人： Atsushi NAKAMURA , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
IPC分类号： G03F7/20 , C08K5/06
CPC分类号： G03F7/11 , C08F220/18 , C08F220/30 , G03F7/0046 , G03F7/2041
摘要： An upper layer-forming composition includes a resin, and a solvent. The resin is dissolvable in a developer for a photoresist film which is to be covered by the upper layer-forming composition to form a pattern by exposure to radiation. The solvent dissolves the resin in the solvent. The solvent includes a compound shown by a formula (1). Each of R1 and R2 independently represents a hydrocarbon group having 1 to 8 carbon atoms or a halogenated hydrocarbon group. R1—O—R2 (1)
摘要翻译：上层形成组合物包括树脂和溶剂。该树脂可溶于用于通过暴露于辐射形成图案的上层形成组合物覆盖的光致抗蚀剂膜的显影剂中。溶剂溶解在溶剂中的树脂。溶剂包括由式（1）表示的化合物。 R 1和R 2各自独立地表示碳原子数1〜8的烃基或卤代烃基。 R1-O-R2（1）

47. 发明申请

US20120021359A1 UPPER LAYER-FORMING COMPOSITION AND RESIST PATTERNING METHOD 有权
标题翻译：上层成型和电阻图案方法
公开(公告)号：US20120021359A1
公开(公告)日：2012-01-26
申请号：US13110855
申请日：2011-05-18
申请人： Takahiro HAYAMA , Kazunori Kusabiraki , Yukio Nishimura , Ken Maruyama , Kiyoshi Tanaka
发明人： Takahiro HAYAMA , Kazunori Kusabiraki , Yukio Nishimura , Ken Maruyama , Kiyoshi Tanaka
IPC分类号： H01L21/02 , C08L41/00 , G03F7/26 , C08L33/16
CPC分类号： G03F7/11 , C08F220/18 , C08F220/24 , C08F220/30 , C08F228/02 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A liquid immersion lithography upper-layer film-forming composition includes (A) a polymer that includes a structural unit (I) shown by the following formula (1), and (S) a solvent. R1 in the formula (1) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. The polymer (A) preferably further includes a structural unit (II) that includes a sulfo group. The polymer (A) preferably further includes a structural unit (III) shown by the following formula (3). R2 in the formula (3) represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R3 represents a linear or branched monovalent hydrocarbon group having 1 to 12 carbon atoms or a monovalent alicyclic group having 3 to 20 carbon atoms, provided that at least one hydrogen atom of the hydrocarbon group or the alicyclic group is substituted with a fluorine atom.
摘要翻译：液浸光刻上层成膜组合物包含（A）包含下式（1）所示的结构单元（I）的聚合物和（S）溶剂。式（1）中的R 1表示氢原子，甲基或三氟甲基。聚合物（A）优选还包括包含磺基的结构单元（II）。聚合物（A）优选还包含由下式（3）表示的结构单元（III）。式（3）中的R 2表示氢原子，甲基或三氟甲基。 R 3表示碳原子数1〜12的直链或支链一价烃基或碳原子数3〜20的一价脂环式基，其中烃基或脂环族基中的至少一个氢原子被氟原子取代。

48. 发明授权

US08076053B2 Upper layer-forming composition and photoresist patterning method 有权
标题翻译：上层形成组合物和光致抗蚀剂图案化方法
公开(公告)号：US08076053B2
公开(公告)日：2011-12-13
申请号：US12091712
申请日：2006-10-25
申请人： Atsushi Nakamura , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
发明人： Atsushi Nakamura , Hiroki Nakagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40 , G03F7/11
CPC分类号： G03F7/11 , C08F220/18 , C08F220/30 , G03F7/0046 , G03F7/2041
摘要： An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.
摘要翻译：提供了形成在光致抗蚀剂上的上层形成组合物，同时几乎不与光致抗蚀剂膜混合，并且提供光致抗蚀剂图案化方法。上层形成组合物在液浸光刻期间稳定地保持在介质如水中不被洗脱，并容易溶解在碱性显影剂中。上层形成组合物覆盖用于通过暴露于辐射形成图案的光致抗蚀剂膜。该组合物包含可溶于光致抗蚀剂膜的显影剂中的树脂和溶解有树脂的溶剂。溶剂在20℃下的粘度小于5.2×10-3Pa·s。此外，溶剂不会引起光致抗蚀剂膜和上层形成组合物的混合。溶剂含有醚或烃。

49. 发明申请

US20110151378A1 RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD 审中-公开
标题翻译：用于液体渗透光刻，聚合物和电阻形成方法的辐射敏感性树脂组合物
公开(公告)号：US20110151378A1
公开(公告)日：2011-06-23
申请号：US12949790
申请日：2010-11-19
申请人： Nobuji MATSUMURA , Akimasa Soyano , Yuusuke Asano , Takehiko Naruoka , Hirokazu Sakakibara , Makoto Shimizu , Yukio Nishimura
发明人： Nobuji MATSUMURA , Akimasa Soyano , Yuusuke Asano , Takehiko Naruoka , Hirokazu Sakakibara , Makoto Shimizu , Yukio Nishimura
IPC分类号： G03F7/004 , G03F7/20 , C08F220/28 , C08F220/22
CPC分类号： C07C69/96 , C08F220/18 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08F220/28 , C08F220/22
摘要： A radiation-sensitive resin composition for liquid immersion lithography includes a resin component, a photoacid generator and a solvent. The resin component includes an acid-dissociable group-containing resin in an amount of more than 50% by mass. The acid-dissociable group-containing resin includes a repeating unit that includes a fluorine atom and an acid-dissociable group in a side chain of the repeating unit.
摘要翻译：用于液浸光刻的辐射敏感性树脂组合物包括树脂组分，光致酸发生剂和溶剂。树脂组分包含大于50质量％的含酸解离基团的树脂。含酸解离基的树脂包括在重复单元的侧链中包含氟原子和酸解离基团的重复单元。

50. 发明申请

US20100003615A1 UPPER LAYER-FORMING COMPOSITION AND PHOTORESIST PATTERNING METHOD 有权
标题翻译：上层成型和光电子图案方法
公开(公告)号：US20100003615A1
公开(公告)日：2010-01-07
申请号：US12091712
申请日：2006-10-25
申请人： Atsushi Nakamura , Hiroki Makagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
发明人： Atsushi Nakamura , Hiroki Makagawa , Hiromitsu Nakashima , Takayuki Tsuji , Hiroshi Dougauchi , Daita Kouno , Yukio Nishimura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , C08F220/18 , C08F220/30 , G03F7/0046 , G03F7/2041
摘要： An upper layer-forming composition formed on a photoresist while causing almost no intermixing with the photoresist film and a photoresist patterning method are provided. The upper layer-forming composition is stably maintained without being eluted in a medium such as water during liquid immersion lithography and is easily dissolved in an alkaline developer. The upper layer-forming composition covers a photoresist film for forming a pattern by exposure to radiation. The composition comprises a resin dissolvable in a developer for the photoresist film and a solvent in which the resin is dissolved. The solvent has a viscosity of less than 5.2×10−3 Pa·s at 20° C. In addition, the solvent does not cause intermixing of the photoresist film and the upper layer-forming composition. The solvent contains an ether or a hydrocarbon.
摘要翻译：提供了形成在光致抗蚀剂上的上层形成组合物，同时几乎不与光致抗蚀剂膜混合，并且提供光致抗蚀剂图案化方法。上层形成组合物在液浸光刻期间稳定地保持在介质如水中不被洗脱，并容易溶解在碱性显影剂中。上层形成组合物覆盖用于通过暴露于辐射形成图案的光致抗蚀剂膜。该组合物包含可溶于光致抗蚀剂膜的显影剂中的树脂和溶解有树脂的溶剂。溶剂在20℃时的粘度小于5.2×10 -3 Pa.s。此外，溶剂不会引起光致抗蚀剂膜和上层形成组合物的混合。溶剂含有醚或烃。

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