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1. 发明申请

US20120100480A1 COMPOUND, FLUORINE-CONTAINING POLYMER, RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING COMPOUND 有权
标题翻译：化合物，含荧光聚合物，辐射敏感性树脂组合物及其制备方法
公开(公告)号：US20120100480A1
公开(公告)日：2012-04-26
申请号：US13216209
申请日：2011-08-23
申请人： Nobuji MATSUMURA , Yuusuke Asano , Hirokazu Sakakibara , Yukio Nishimura , Takehiko Naruoka
发明人： Nobuji MATSUMURA , Yuusuke Asano , Hirokazu Sakakibara , Yukio Nishimura , Takehiko Naruoka
IPC分类号： G03F7/004 , C08F222/20 , C07C69/96
CPC分类号： C07C69/96 , C07C68/06 , C07C2601/14 , C08F220/30 , G03F7/0046 , G03F7/0392
摘要： A compound has a following general formula (1). R0 represents an (n+1)-valent linear or branched aliphatic hydrocarbon group having 1 to 10 carbon atoms, or the like. R1 represents a hydrogen atom, a methyl group, or a trifluoromethyl group. R2 represents a single bond or the like. R3 represent a linear or branched alkyl group having 1 to 4 carbon atoms or the like. X represents a linear or branched fluoroalkylene group having 1 to 10 carbon atoms, and n is an integer from 1 to 5.
摘要翻译：化合物具有以下通式（1）。 R 0表示具有1〜10个碳原子的（n + 1）价的直链或支链脂肪族烃基等。 R1表示氢原子，甲基或三氟甲基。 R2表示单键等。 R 3表示具有1〜4个碳原子的直链或支链烷基等。 X表示碳原子数1〜10的直链状或支链状的氟代亚烷基，n表示1〜5的整数。

2. 发明申请

US20110151378A1 RADIATION-SENSITIVE RESIN COMPOSITION FOR LIQUID IMMERSION LITHOGRAPHY, POLYMER, AND RESIST PATTERN-FORMING METHOD 审中-公开
标题翻译：用于液体渗透光刻，聚合物和电阻形成方法的辐射敏感性树脂组合物
公开(公告)号：US20110151378A1
公开(公告)日：2011-06-23
申请号：US12949790
申请日：2010-11-19
申请人： Nobuji MATSUMURA , Akimasa Soyano , Yuusuke Asano , Takehiko Naruoka , Hirokazu Sakakibara , Makoto Shimizu , Yukio Nishimura
发明人： Nobuji MATSUMURA , Akimasa Soyano , Yuusuke Asano , Takehiko Naruoka , Hirokazu Sakakibara , Makoto Shimizu , Yukio Nishimura
IPC分类号： G03F7/004 , G03F7/20 , C08F220/28 , C08F220/22
CPC分类号： C07C69/96 , C08F220/18 , G03F7/0046 , G03F7/0397 , G03F7/2041 , C08F220/28 , C08F220/22
摘要： A radiation-sensitive resin composition for liquid immersion lithography includes a resin component, a photoacid generator and a solvent. The resin component includes an acid-dissociable group-containing resin in an amount of more than 50% by mass. The acid-dissociable group-containing resin includes a repeating unit that includes a fluorine atom and an acid-dissociable group in a side chain of the repeating unit.
摘要翻译：用于液浸光刻的辐射敏感性树脂组合物包括树脂组分，光致酸发生剂和溶剂。树脂组分包含大于50质量％的含酸解离基团的树脂。含酸解离基的树脂包括在重复单元的侧链中包含氟原子和酸解离基团的重复单元。

3. 发明申请

US20120122036A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20120122036A1
公开(公告)日：2012-05-17
申请号：US13352384
申请日：2012-01-18
申请人： Hikaru SUGITA , Nobuji MATSUMURA , Daisuke SHIMIZU , Toshiyuki KAI , Tsutomu SHIMOKAWA
发明人： Hikaru SUGITA , Nobuji MATSUMURA , Daisuke SHIMIZU , Toshiyuki KAI , Tsutomu SHIMOKAWA
IPC分类号： G03F7/20
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0757 , G03F7/265
摘要： A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.
摘要翻译：图案形成方法包括提供和固化含有辐射敏感性酸产生剂的底层膜，其在暴露于基底上的辐射时产生酸。底层膜通过掩模用辐射照射，以在底层膜的暴露区域中选择性地产生酸。提供了不含有辐射敏感性酸产生剂并且含有能够通过酸的作用聚合或交联的组合物的上层膜。通过在与产生酸的底层膜的暴露区域相对应的上层膜的区域中选择性地聚合或交联固化膜。除去与未生成酸的下层膜的区域对应的上层膜的区域。

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