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1. 发明授权

US08877429B2 Resin composition for making resist pattern insoluble, and method for formation of resist pattern by using the same 有权
标题翻译：用于制造抗蚀剂图案的树脂组合物不溶性，以及通过使用它们形成抗蚀剂图案的方法
公开(公告)号：US08877429B2
公开(公告)日：2014-11-04
申请号：US13004898
申请日：2011-01-12
申请人： Gouji Wakamatsu , Masafumi Hori , Kouichi Fujiwara , Makoto Sugiura
发明人： Gouji Wakamatsu , Masafumi Hori , Kouichi Fujiwara , Makoto Sugiura
IPC分类号： G03F7/095 , G03F7/26 , G03F7/004 , G03F7/00 , H01L21/027 , G03F7/039
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/2024 , H01L21/0273
摘要： A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
摘要翻译：抗蚀剂图案不溶化树脂组合物用于抗蚀剂图案形成方法。抗蚀剂图案不溶化树脂组合物包括溶剂和树脂。树脂包括在其侧链中包含羟基的第一重复单元和由下式（1-1）所示的单体衍生的第二重复单元和由下式表示的单体衍生的第三重复单元中的至少一种：下述式（1-2）表示的基团，其中，例如，R1表示氢原子，A表示亚甲基，R2表示下述式（2-1）所示的基团或下述式（2- 2）中，R3表示亚甲基，R4表示氢原子，n表示0或1，R34表示氢原子和碳原子数1〜10的直链或支链烷基中的至少一种。

2. 发明申请

US20100310988A1 RESIST PATTERN-FORMING METHOD AND RESIST PATTERN MINIATURIZING RESIN COMPOSITION 有权
标题翻译：电阻图案形成方法和电阻图案微型化树脂组合物
公开(公告)号：US20100310988A1
公开(公告)日：2010-12-09
申请号：US12841988
申请日：2010-07-22
申请人： Takayoshi ABE , Atsushi Nakamura , Gouji Wakamatsu
发明人： Takayoshi ABE , Atsushi Nakamura , Gouji Wakamatsu
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： H01L21/0273 , G03F7/0046 , G03F7/0397 , G03F7/40 , G03F7/405 , Y10S430/106
摘要： A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern.
摘要翻译：抗蚀剂图案形成方法包括使用第一正性感光树脂组合物形成第一抗蚀剂图案。将抗蚀剂图案 - 小型化树脂组合物施加到第一抗蚀剂图案。施加到第一抗蚀剂图案上的抗蚀剂图案 - 小型化树脂组合物被烘焙和显影以形成从第一抗蚀剂图案小型化的第二抗蚀剂图案。将抗蚀剂图案不溶化树脂组合物施加到第二抗蚀剂图案。将施加到第二抗蚀剂图案上的抗蚀剂图案不溶化树脂组合物进行烘烤和洗涤以形成不溶于显影剂的第三抗蚀剂图案和第二正色辐射敏感性树脂组合物。使用第二正性感光树脂组合物在第三抗蚀剂图案上形成第二抗蚀剂层。第二抗蚀剂层被曝光和显影以形成第四抗蚀剂图案。

3. 发明申请

US20100255416A1 COMPOSITION FOR FORMING UPPER LAYER FILM FOR IMMERSION EXPOSURE, UPPER LAYER FILM FOR IMMERSION EXPOSURE, AND METHOD OF FORMING PHOTORESIST PATTERN 有权
标题翻译：用于形成上层暴露的上层膜的组合物，用于浸没曝光的上层膜和形成光电子图案的方法
公开(公告)号：US20100255416A1
公开(公告)日：2010-10-07
申请号：US12680200
申请日：2008-09-10
申请人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
发明人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/11 , G03F7/2041
摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].
摘要翻译：本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。用于形成上层膜的组合物包括树脂成分和溶剂。树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式（2-1）和（2-2）。（1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。

4. 发明授权

US08697343B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition 有权
标题翻译：含氟聚合物，净化方法和辐射敏感树脂组合物
公开(公告)号：US08697343B2
公开(公告)日：2014-04-15
申请号：US12294386
申请日：2007-03-23
申请人： Hiroki Nakagawa , Hiromitsu Nakashima , Gouji Wakamatsu , Kentarou Harada , Yukio Nishimura , Takeo Shioya
发明人： Hiroki Nakagawa , Hiromitsu Nakashima , Gouji Wakamatsu , Kentarou Harada , Yukio Nishimura , Takeo Shioya
IPC分类号： G03F7/26 , G03F7/039
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0045 , G03F7/039 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/322 , G03F7/38 , G03F7/40
摘要： An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
摘要翻译：本发明的目的是提供一种含氟聚合物，其含有含氟聚合物的液浸光刻用的辐射敏感性树脂组合物，其导致具有优异形状和优异的焦深的图案，其中在液浸光刻中曝光期间与抗蚀剂接触的液体浸液式液晶等液体中的洗脱组分的量很少，并且在抗蚀剂膜和用于液浸的液体之间提供较大的后退接触角光刻法如水，以及纯化含氟聚合物的方法。本发明的树脂组合物包含含有由通式（1）和（2）表示的重复单元并具有1,000-50,000的Mw的新的含氟聚合物（A），具有酸不稳定基团的树脂（B），辐射敏感性酸产生剂（C），含氮化合物（D）和溶剂（E）。

5. 发明申请

US20110111349A1 RESIN COMPOSITION FOR MAKING RESIST PATTERN INSOLUBLE, AND METHOD FOR FORMATION OF RESIST PATTERN BY USING THE SAME 有权
标题翻译：用于制造耐腐蚀图案的树脂组合物，以及使用它们形成耐力图案的方法
公开(公告)号：US20110111349A1
公开(公告)日：2011-05-12
申请号：US13004898
申请日：2011-01-12
申请人： Gouji WAKAMATSU , Masafumi Hori , Kouichi Fujiwara , Makoto Sugiura
发明人： Gouji WAKAMATSU , Masafumi Hori , Kouichi Fujiwara , Makoto Sugiura
IPC分类号： G03F7/20 , C08L37/00
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/0046 , G03F7/0397 , G03F7/2024 , H01L21/0273
摘要： A resist pattern-insolubilizing resin composition is used in a resist pattern-forming method. The resist pattern-insolubilizing resin composition includes solvent and a resin. The resin includes a first repeating unit that includes a hydroxyl group in its side chain and at least one of a second repeating unit derived from a monomer shown by a following formula (1-1) and a third repeating unit derived from a monomer shown by a following formula (1-2), wherein for example, R1 represents a hydrogen atom, A represents a methylene group, R2 represents a group shown by a following formula (2-1) or a group shown by a following formula (2-2), R3 represents a methylene group, R4 represents a hydrogen atom, and n is 0 or 1, wherein each of R34 represents at least one of a hydrogen atom and a linear or branched alkyl group having 1 to 10 carbon atoms.
摘要翻译：抗蚀剂图案不溶化树脂组合物用于抗蚀剂图案形成方法。抗蚀剂图案不溶化树脂组合物包括溶剂和树脂。树脂包括在其侧链中包含羟基的第一重复单元和由下式（1-1）所示的单体衍生的第二重复单元和由下式表示的单体衍生的第三重复单元中的至少一种：下述式（1-2）表示的基团，其中，例如，R1表示氢原子，A表示亚甲基，R2表示下述式（2-1）所示的基团或下述式（2- 2）中，R3表示亚甲基，R4表示氢原子，n表示0或1，R34表示氢原子和碳原子数1〜10的直链或支链烷基中的至少一种。

6. 发明授权

US08431332B2 Composition for forming upper layer film for immersion exposure, upper layer film for immersion exposure, and method of forming photoresist pattern 有权
标题翻译：用于形成用于浸渍曝光的上层膜的组合物，用于浸渍曝光的上层膜，以及形成光致抗蚀剂图案的方法
公开(公告)号：US08431332B2
公开(公告)日：2013-04-30
申请号：US12680200
申请日：2008-09-10
申请人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
发明人： Daita Kouno , Norihiko Sugie , Gouji Wakamatsu , Norihiro Natsume , Yukio Nishimura , Makoto Sugiura
IPC分类号： G03F7/11 , G03F7/09 , G03F7/38
CPC分类号： G03F7/11 , G03F7/2041
摘要： The object of the invention is to provide a composition for forming an upper layer film for immersion exposure capable of forming an upper layer film effectively inhibited from developing defects through an immersion exposure process, such as a watermark defect and dissolution residue defect. Also provided are an upper layer film for immersion exposure and a method of forming a resist pattern. The composition for forming an upper layer film includes a resin ingredient and a solvent. The resin ingredient includes a resin (A) having at least one kind of repeating units selected among those represented by the formulae (1-1) to (1-3) and at least either of the two kinds of repeating units represented by the formulae (2-1) and (2-2). (1-1) (1-2) (1-3) (2-1) (2-2) [In the formulae, R1 represents hydrogen or methyl; R2 and R3 each represents methylene, linear or branched C2-6 alkylene, or alicyclic C4-12 alkylene; R4 represents hydrogen or methyl; and R5 represents a single bond, methylene, or linear or branched C2-6 alkylene.].
摘要翻译：本发明的目的是提供一种用于形成用于浸渍曝光的上层膜的组合物，其能够通过诸如水印缺陷和溶解残留缺陷的浸渍曝光工艺有效地防止显影缺陷的形成。还提供了用于浸渍曝光的上层膜和形成抗蚀剂图案的方法。用于形成上层膜的组合物包括树脂成分和溶剂。树脂成分包括具有选自由式（1-1）〜（1-3）表示的重复单元中的至少一种重复单元的树脂（A）和由式（2-1）和（2-2）。（1-1）（1-2）（1-3）（2-1）（2-2）[式中，R1表示氢或甲基; R2和R3各自表示亚甲基，直链或支链C 2-6亚烷基或脂环族C 4-12亚烷基; R4代表氢或甲基; 并且R 5表示单键，亚甲基或直链或支链C 2-6亚烷基。

7. 发明授权

US08206894B2 Resist pattern-forming method and resist pattern miniaturizing resin composition 有权
标题翻译：抗蚀剂图案形成方法和抗蚀剂图案小型化树脂组合物
公开(公告)号：US08206894B2
公开(公告)日：2012-06-26
申请号：US12841988
申请日：2010-07-22
申请人： Takayoshi Abe , Atsushi Nakamura , Gouji Wakamatsu
发明人： Takayoshi Abe , Atsushi Nakamura , Gouji Wakamatsu
IPC分类号： G03F7/00 , G03F7/004 , G03F7/26 , G03F7/40
CPC分类号： H01L21/0273 , G03F7/0046 , G03F7/0397 , G03F7/40 , G03F7/405 , Y10S430/106
摘要： A resist pattern-forming method includes forming a first resist pattern using a first positive-tone radiation-sensitive resin composition. A resist pattern-miniaturizing resin composition is applied to the first resist pattern. The resist pattern-miniaturizing resin composition applied to the first resist pattern is baked and developed to form a second resist pattern that is miniaturized from the first resist pattern. A resist pattern-insolubilizing resin composition is applied to the second resist pattern. The resist pattern-insolubilizing resin composition applied to the second resist pattern is baked and washed to form a third resist pattern that is insoluble in a developer and a second positive-tone radiation-sensitive resin composition. A second resist layer is formed on the third resist pattern using the second positive-tone radiation-sensitive resin composition. The second resist layer is exposed and developed to form a fourth resist pattern.
摘要翻译：抗蚀剂图案形成方法包括使用第一正性感光树脂组合物形成第一抗蚀剂图案。将抗蚀剂图案 - 小型化树脂组合物施加到第一抗蚀剂图案。施加到第一抗蚀剂图案上的抗蚀剂图案 - 小型化树脂组合物被烘焙和显影以形成从第一抗蚀剂图案小型化的第二抗蚀剂图案。将抗蚀剂图案不溶化树脂组合物施加到第二抗蚀剂图案。将施加到第二抗蚀剂图案上的抗蚀剂图案不溶化树脂组合物进行烘烤和洗涤以形成不溶于显影剂的第三抗蚀剂图案和第二正色辐射敏感性树脂组合物。使用第二正性感光树脂组合物在第三抗蚀剂图案上形成第二抗蚀剂层。第二抗蚀剂层被曝光和显影以形成第四抗蚀剂图案。

8. 发明申请

US20100068650A1 POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION 审中-公开
标题翻译：积极工作的辐射敏感性组合物和使用组合物形成抗蚀剂图案的方法
公开(公告)号：US20100068650A1
公开(公告)日：2010-03-18
申请号：US12529341
申请日：2008-03-17
申请人： Yukio Nishimura , Kaori Sakai , Nobuji Matsumura , Makoto Sugiura , Atsushi Nakamura , Gouji Wakamatsu , Yuusuke Anno
发明人： Yukio Nishimura , Kaori Sakai , Nobuji Matsumura , Makoto Sugiura , Atsushi Nakamura , Gouji Wakamatsu , Yuusuke Anno
IPC分类号： G03F7/039 , G03F7/40
CPC分类号： G03F7/0035 , G03F7/0397 , G03F7/2024 , G03F7/2041 , G03F7/40
摘要： A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working.
摘要翻译：提供了一种在液浸光刻工艺中使用双曝光图案化的图案化方法。图案化方法包括使用第一抗蚀剂层形成组合物在基板上形成第一图案的步骤，使第一图案无效的步骤，在其上已经形成图案的基板上形成第二图案的步骤，使用第二抗蚀剂层形成组合物并将第二抗蚀剂层暴露于辐射，以及在第一图案的空间区域中显影曝光的抗蚀剂层以形成第二图案的步骤。第一抗蚀剂层形成组合物含有交联剂，其加速第一层从正性转变为负性转化。

9. 发明申请

US20090202945A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION 有权
标题翻译：含氟聚合物，纯化方法和辐射敏感性树脂组合物
公开(公告)号：US20090202945A1
公开(公告)日：2009-08-13
申请号：US12294386
申请日：2007-03-23
申请人： Hiroki Nakagawa , Hiromitsu Nakashima , Gouji Wakamatsu , Kentarou Harada , Yukio Nishimura , Takeo Shioya
发明人： Hiroki Nakagawa , Hiromitsu Nakashima , Gouji Wakamatsu , Kentarou Harada , Yukio Nishimura , Takeo Shioya
IPC分类号： G03F7/039 , C08F20/22
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0045 , G03F7/039 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/322 , G03F7/38 , G03F7/40
摘要： An object of the present invention is to provide a novel fluorine-containing polymer, a radiation-sensitive resin composition for liquid immersion lithography which contains the fluorine-containing polymer, which leads to a pattern having an excellent shape and excellent depth of focus, wherein the amount of an eluted component in a liquid for liquid immersion lithography such as water that comes in contact with the resist during exposure in liquid immersion lithography is little, and which provides a larger receding contact angle between the resist film and the liquid for liquid immersion lithography such as water, and a method for purifying the fluorine-containing polymer. The present resin composition comprises a novel fluorine-containing polymer (A) containing repeating units represented by the general formulae (1) and (2) and having Mw of 1,000-50,000, a resin (B) having an acid-unstable group, a radiation-sensitive acid generator (C), a nitrogen-containing compound (D) and a solvent (E).
摘要翻译：本发明的目的是提供一种含氟聚合物，其含有含氟聚合物的液浸光刻用的辐射敏感性树脂组合物，其导致具有优异形状和优异的焦深的图案，其中在液浸光刻中曝光期间与抗蚀剂接触的液体浸液式液晶等液体中的洗脱组分的量很少，并且在抗蚀剂膜和用于液浸的液体之间提供较大的后退接触角光刻法如水，以及纯化含氟聚合物的方法。本发明的树脂组合物包含含有由通式（1）和（2）表示的重复单元并具有1,000-50,000的Mw的新的含氟聚合物（A），具有酸不稳定基团的树脂（B），辐射敏感性酸产生剂（C），含氮化合物（D）和溶剂（E）。

10. 发明授权

US08501385B2 Positive-type radiation-sensitive composition, and resist pattern formation method 有权
标题翻译：正型辐射敏感组合物和抗蚀剂图案形成方法
公开(公告)号：US08501385B2
公开(公告)日：2013-08-06
申请号：US13005536
申请日：2011-01-13
申请人： Yusuke Anno , Kouichi Fujiwara , Makoto Sugiura , Gouji Wakamatsu
发明人： Yusuke Anno , Kouichi Fujiwara , Makoto Sugiura , Gouji Wakamatsu
IPC分类号： G03C1/00 , G03F1/00
CPC分类号： H01L21/0273 , C08F220/18 , C08F220/28 , C08F220/32 , C08F220/34 , C08F220/36 , G03F7/0035 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/40 , C08F220/22
摘要： A positive-tone radiation-sensitive composition is used in a resist pattern-forming method as a first positive-tone radiation-sensitive composition. A positive-tone radiation-sensitive composition includes a polymer, a photoacid generator, and a solvent. The polymer includes an acid-labile group and a crosslinkable group. The resist pattern-forming method includes providing the first positive-tone radiation-sensitive composition on a substrate to form a first resist pattern on the substrate. The first resist pattern is made to be inactive to light or heat so that the first resist pattern is insoluble in a second positive-tone radiation-sensitive composition. The second positive-tone radiation-sensitive composition is provided on the substrate to form a second resist pattern on the substrate on which the first resist pattern is formed.
摘要翻译：作为第一正色调辐射敏感性组合物的抗蚀剂图案形成方法中使用正性辐射敏感性组合物。正音辐射敏感组合物包括聚合物，光致酸产生剂和溶剂。聚合物包括酸不稳定基团和可交联基团。抗蚀剂图案形成方法包括在基板上提供第一正色散辐射敏感性组合物以在基板上形成第一抗蚀剂图案。使第一抗蚀剂图案对光或热不起作用，使得第一抗蚀剂图案不溶于第二正色辐射敏感组合物。第二正色辐射敏感组合物设置在基板上以在其上形成有第一抗蚀剂图案的基板上形成第二抗蚀剂图案。

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