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41. 发明授权

US06302965B1 Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces 失效
标题翻译：用于流动的分散板将用于化学气相沉积膜的化合物蒸发到半导体表面上
公开(公告)号：US06302965B1
公开(公告)日：2001-10-16
申请号：US09638506
申请日：2000-08-15
申请人： Salvador Umotoy , Vincent Ku , Xiaoxiong Yuan , Lawrence Chung-Lai Lei
发明人： Salvador Umotoy , Vincent Ku , Xiaoxiong Yuan , Lawrence Chung-Lai Lei
IPC分类号： C23C1600
CPC分类号： C23C16/45576 , C23C16/16 , C23C16/455
摘要： A dispersion plate for evenly flowing at low pressure into a processing chamber vaporized material, such as a tungsten compound for deposition of metal layers onto a semiconductor, has a disc-like body with a center axis, an input face and an output face. The dispersion plate has a cup-like entrance along the center axis in its input face for receiving a stream of vaporized material and a plurality of passages for flow of vapor with each passage having a length and a diameter and extending radially from the entrance like the spokes of a wheel at inclined angles relative to the center axis from the input face to the output face. Two annular grooves are cut into the output face and intersect with the respective ends of the passages. The plate has a center hole with a flared diameter extending along the center axis from the entrance in the input face to the output face. The hole and plurality of passages are designed to have sufficiently large diameters so as to keep pressure drops low with respect to vapor flowing through the plate.
摘要翻译：用于在低压下均匀流动到处理室的分散板，例如用于将金属层沉积到半导体上的钨化合物的气化材料具有中心轴，输入面和输出面的盘状体。分散板在其输入面中具有沿着中心轴线的杯状入口，用于接收气化材料流和多个用于蒸汽流动的通道，每个通道具有长度和直径并且从入口径向延伸，如轮的轮辐相对于从输入面到输出面的中心轴线呈倾斜角。两个环形槽被切割成输出面并与通道的相应端相交。该板具有中心孔，该中心孔具有沿着中心轴线从输入面入口到输出面延伸的扩口直径。孔和多个通道被设计成具有足够大的直径，以便相对于流过板的蒸气保持压力降低。

42. 发明授权

US6063441A Processing chamber and method for confining plasma 失效
标题翻译：处理室和限制等离子体的方法
公开(公告)号：US6063441A
公开(公告)日：2000-05-16
申请号：US982727
申请日：1997-12-02
申请人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
发明人： Keith Koai , Lawrence Chung-Lai Lei , Mei Chang , Mark S. Johnson
IPC分类号： C23C16/50 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01J37/32 , H01L21/205 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45572 , C23C16/4585 , C23C16/5096 , H01J37/32477 , H01J37/32522 , H01J37/32834 , H01J2237/0206
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The invention reduces thermal deposition of the conductive material on peripheral portions of the pedestal supporting a wafer and in a pumping channel exhausting the chamber. A peripheral ring placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. The processing chamber includes a chamber lid assembly having an isolator ring member that has a sloping surface for confirming the plasma within a processing zone of the processing chamber while the wafer is being processed therein. A method for forming a CVD layer on a wafer comprising elevating the pedestal until an upper pedestal surface of the pedestal extends above a lower edge of the isolator ring member.
摘要翻译：衬底处理室，特别是用于导电材料的热沉积和随后执行的等离子体工艺的化学气相沉积（CVD）室。本发明减少了导电材料在支撑晶片的基座周边部分和排出腔室的泵送通道中的热沉积。放置在基座上的优选地也用于使晶片居中的外围环与基座热隔离，使得其温度保持基本上低于晶片的温度。处理室包括具有隔离器环构件的腔室盖组件，该隔离器环构件具有倾斜表面，用于在晶片处理期间确认处理室的处理区域内的等离子体。一种用于在晶片上形成CVD层的方法，包括升高基座，直到基座的上基座表面延伸到隔离器环构件的下边缘的上方。

43. 发明授权

US5888304A Heater with shadow ring and purge above wafer surface 失效
标题翻译：加热器带有阴影环并在晶片表面上方吹扫
公开(公告)号：US5888304A
公开(公告)日：1999-03-30
申请号：US626789
申请日：1996-04-02
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei , Dale DuBois
IPC分类号： C23C16/02 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/4585 , C23C16/46
摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.
摘要翻译：本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。

44. 发明授权

US5810936A Plasma-inert cover and plasma cleaning process and apparatus employing same 失效
标题翻译：等离子惰性覆盖物和等离子体清洗工艺及其使用的设备
公开(公告)号：US5810936A
公开(公告)日：1998-09-22
申请号：US662723
申请日：1996-06-10
申请人： Cissy S. Leung , Lawrence Chung-Lai Lei , Sasson Somekh
发明人： Cissy S. Leung , Lawrence Chung-Lai Lei , Sasson Somekh
IPC分类号： C30B33/12 , C23C16/44 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , C23C16/00 , C23F1/02
CPC分类号： H01L21/67028 , C23C16/4405 , H01J37/32862 , H01J2237/022 , Y10S438/905
摘要： A apparatus for removing deposits from within a space at least partially delimited by a surface which is subject to attack from a plasma including a surface cover comprising a material which is inert to the plasma.
摘要翻译：一种用于从至少部分地由受等离子体侵蚀的表面限定的空间内去除沉积物的装置，包括包含对等离子体是惰性的材料的表面覆盖物。

45. 发明申请

US20180287007A1 SUBSTRATE PROCESSING SYSTEM, SUBSTRATE CONVEYING DEVICE AND CONVEYING METHOD 审中-公开
公开(公告)号：US20180287007A1
公开(公告)日：2018-10-04
申请号：US15872915
申请日：2018-01-16
申请人： Lawrence Chung-Lai Lei
发明人： Lawrence Chung-Lai Lei
IPC分类号： H01L31/18 , B65G47/22
摘要： A conveying device for conveying at least a first row of substrates and a second row of substrates, includes: a conveying fork having a main body and a plurality of branches, a first end of each of the branches is connected to the main body, and a second end of each of the branches is a free end; wherein a first branch of the plurality branches has a first plurality of grooves, and a second branch of the plurality of branches has a second plurality of grooves; and wherein one of the first plurality of grooves and one of the second plurality of grooves are configured to support one of the substrates in the first row.

46. 发明授权

US08626330B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08626330B2
公开(公告)日：2014-01-07
申请号：US13235855
申请日：2011-09-19
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。

47. 发明授权

US07860597B2 Atomic layer deposition apparatus 有权
公开(公告)号：US07860597B2
公开(公告)日：2010-12-28
申请号：US12646706
申请日：2009-12-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

48. 发明授权

US07674715B2 Method for forming tungsten materials during vapor deposition processes 有权
标题翻译：在气相沉积工艺中形成钨材料的方法
公开(公告)号：US07674715B2
公开(公告)日：2010-03-09
申请号：US12335983
申请日：2008-12-16
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung , Ashok Sinha , Ming Xi
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.
摘要翻译：在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成在原子层沉积（ALD）过程中在基底上形成钨成核层。该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

49. 发明申请

US20090113684A1 Uniformly Compressed Process Chamber Gate Seal for Semiconductor Processing Chamber 审中-公开
标题翻译：用于半导体加工室的均匀压缩过程室门密封
公开(公告)号：US20090113684A1
公开(公告)日：2009-05-07
申请号：US12253716
申请日：2008-10-17
申请人： Won B. Bang , Yen-Kun Victor Wang , Lawrence Chung-Lai Lei
发明人： Won B. Bang , Yen-Kun Victor Wang , Lawrence Chung-Lai Lei
IPC分类号： H01L21/67
CPC分类号： H01L21/67126
摘要： Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. The opening has at least one angled corner. The door system includes a door, actuator, and sealing member. The door is moveable in the plane and has at least one angled corner to align the door with the opening. The actuator moves the door to selectively open and close the opening. The sealing member seals the opening when the door is in a closed position. The door is sized to apply substantially uniform seal compression to the sealing member when in the closed position.
摘要翻译：描述了用于密封半导体处理系统中的两个室之间的开口的门系统的技术。开口至少有一个角角。门系统包括门，致动器和密封构件。门可以在平面上移动，并且具有至少一个成角度的角以将门与开口对齐。致动器移动门以选择性地打开和关闭开口。当门处于关闭位置时，密封构件密封开口。门的尺寸适于在处于关闭位置时对密封构件施加基本均匀的密封压缩。

50. 发明授权

US06827815B2 Showerhead assembly for a processing chamber 失效
标题翻译：用于处理室的喷头组件
公开(公告)号：US06827815B2
公开(公告)日：2004-12-07
申请号：US10047076
申请日：2002-01-15
申请人： Mark M. Hytros , Truc T. Tran , Hongbee Teoh , Lawrence Chung-Lai Lei , Avgerinos Gelatos , Salvador P. Umotoy
发明人： Mark M. Hytros , Truc T. Tran , Hongbee Teoh , Lawrence Chung-Lai Lei , Avgerinos Gelatos , Salvador P. Umotoy
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.
摘要翻译：提供了一种用于在处理室内分配气体的喷头组件。在一个实施例中，喷头组件包括具有与其连接的面板的圆柱形构件。圆柱形构件在第一端具有向外延伸的第一凸缘。面板联接到圆柱形构件的第二端，并且具有通过面板的中心区域形成的多个孔。当受到热应力时，圆柱形构件和面板之间的接合允许相对移动。在另一个实施例中，至少一个夹紧构件将面板保持在圆柱形构件的第二端。

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