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1. 发明授权

US06827815B2 Showerhead assembly for a processing chamber 失效
标题翻译：用于处理室的喷头组件
公开(公告)号：US06827815B2
公开(公告)日：2004-12-07
申请号：US10047076
申请日：2002-01-15
申请人： Mark M. Hytros , Truc T. Tran , Hongbee Teoh , Lawrence Chung-Lai Lei , Avgerinos Gelatos , Salvador P. Umotoy
发明人： Mark M. Hytros , Truc T. Tran , Hongbee Teoh , Lawrence Chung-Lai Lei , Avgerinos Gelatos , Salvador P. Umotoy
IPC分类号： C23C1600
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.
摘要翻译：提供了一种用于在处理室内分配气体的喷头组件。在一个实施例中，喷头组件包括具有与其连接的面板的圆柱形构件。圆柱形构件在第一端具有向外延伸的第一凸缘。面板联接到圆柱形构件的第二端，并且具有通过面板的中心区域形成的多个孔。当受到热应力时，圆柱形构件和面板之间的接合允许相对移动。在另一个实施例中，至少一个夹紧构件将面板保持在圆柱形构件的第二端。

2. 发明授权

US07779784B2 Apparatus and method for plasma assisted deposition 有权
标题翻译：用于等离子体辅助沉积的装置和方法
公开(公告)号：US07779784B2
公开(公告)日：2010-08-24
申请号：US11146309
申请日：2005-06-06
申请人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
发明人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.
摘要翻译：本发明的实施例涉及通过在处理区域附近产生等离子体辅助沉积的装置和方法。该装置的一个实施例包括基板处理室，其包括顶部喷淋板，耦合到顶部淋浴板的电源，底部淋浴板和布置在顶部淋浴板和底部淋浴板之间的绝缘体。一方面，电源适于选择性地向顶部喷淋板提供电力，以从顶部喷淋板和底部淋浴板之间的气体产生等离子体。在另一个实施例中，电源耦合到顶部喷淋板和底部淋浴板，以在底部喷淋板和基板支撑件之间产生等离子体。该方法的一个实施方案包括在单个室中执行一个或多个过程，包括但不限于循环层沉积，组合循环层沉积和等离子体增强化学气相沉积; 等离子体增强化学气相沉积; 和/或化学气相沉积。

3. 发明授权

US06998014B2 Apparatus and method for plasma assisted deposition 失效
公开(公告)号：US06998014B2
公开(公告)日：2006-02-14
申请号：US10197940
申请日：2002-07-16
申请人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
发明人： Chen-An Chen , Avgerinos Gelatos , Michael X. Yang , Ming Xi , Mark M. Hytros
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： C23C16/06 , C23C16/34 , C23C16/42 , C23C16/452 , C23C16/4554 , C23C16/45544 , C23C16/45565 , C23C16/515 , H01J37/32082 , H01J37/3244 , H01L21/28556 , H01L21/28562 , H01L21/28568 , H01L21/3122 , H01L21/3127 , H01L21/76843
摘要： Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support. One embodiment of the method comprises performing in a single chamber one or more of the processes including, but not limited to, cyclical layer deposition, combined cyclical layer deposition and plasma-enhanced chemical vapor deposition; plasma-enhanced chemical vapor deposition; and/or chemical vapor deposition.

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