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1. 发明授权

US08027746B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08027746B2
公开(公告)日：2011-09-27
申请号：US12953220
申请日：2010-11-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

2. 发明授权

US07846840B2 Method for forming tungsten materials during vapor deposition processes 有权
公开(公告)号：US07846840B2
公开(公告)日：2010-12-07
申请号：US12645117
申请日：2009-12-22
申请人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
发明人： Moris Kori , Alfred W. Mak , Jeong Soo Byun , Lawrence Chung-Lai Lei , Hua Chung
IPC分类号： H01L21/44
CPC分类号： H01L21/76838 , C23C16/0272 , C23C16/14 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45529 , C23C16/45534 , C23C16/45561 , C30B25/02 , C30B25/14 , C30B29/38 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

3. 发明申请

US20100173439A1 Methods and systems of transferring a substrate to minimize heat loss 有权
标题翻译：转移衬底以最小化热损失的方法和系统
公开(公告)号：US20100173439A1
公开(公告)日：2010-07-08
申请号：US12319223
申请日：2009-01-03
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry WU , Simon Zhu , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Tzy-Chung Terry WU , Simon Zhu , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L31/18
CPC分类号： H01L21/6719 , H01L21/67161 , H01L21/67173 , H01L21/67196 , H01L21/67207 , H01L21/67706 , H01L21/67748 , H01L21/67754 , Y10S414/135
摘要： A method of transferring one or more substrates between process modules or load lock stations while minimizing heat loss is provided. In some embodiments the method comprising the steps of: identifying a destination location D1 for a substrate S1 present at an initial processing location P1; if the destination location D1 is occupied with a substrate S2, maintaining the substrate S1 at the initial processing location P1; and if the destination location D1 is available, transferring the substrate S1 to the destination location D1. In accordance with additional embodiments, the method is carried out on a system for processing substrates which includes two or more process modules, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.
摘要翻译：提供了一种在过程模块或加载锁定站之间传送一个或多个基板同时最小化热损失的方法。在一些实施例中，该方法包括以下步骤：识别存在于初始处理位置P1的衬底S1的目的地位置D1; 如果目的地位置D1被基板S2占用，则将基板S1保持在初始处理位置P1; 并且如果目的地位置D1可用，则将基板S1传送到目的地位置D1。根据另外的实施例，该方法在用于处理基板的系统上进行，该系统包括两个或更多个处理模块，基板处理机器人，负载锁定室和横向基板处理器。横向基板处理器包括被配置为将基板输送到处理模块的移动横向室，其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。横向基板处理器还包括用于支撑移动横向室的轨道，其中轨道邻近进程模块的进入定位，以及用于将移动横向室移动到轨道上的驱动系统。

4. 发明授权

US07085616B2 Atomic layer deposition apparatus 失效
公开(公告)号：US07085616B2
公开(公告)日：2006-08-01
申请号：US09917842
申请日：2001-07-27
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

5. 发明申请

US20060021703A1 Dual gas faceplate for a showerhead in a semiconductor wafer processing system 审中-公开
标题翻译：用于半导体晶片处理系统中喷头的双气面板
公开(公告)号：US20060021703A1
公开(公告)日：2006-02-02
申请号：US10901768
申请日：2004-07-29
申请人： Salvador Umotoy , Lawrence Chung-Lai Lei , Anh Nguyen , Steve Chiao , Hanh Nguyen
发明人： Salvador Umotoy , Lawrence Chung-Lai Lei , Anh Nguyen , Steve Chiao , Hanh Nguyen
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： C23C16/45565 , H01J37/3244 , H01J37/32522
摘要： A faceplate for a showerhead of a semiconductor wafer processing system is provided. The faceplate has a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the processing region within a reaction chamber. The showerhead includes a faceplate and a gas distribution manifold assembly. The faceplate defines a plurality of first gas holes that carry a first gas from the manifold assembly through the faceplate to the process region, and a plurality of channels that couple a plurality of second gas holes to a radial plenum that receives the second gas from the manifold assembly. The faceplate and the manifold assembly are each fabricated from a substantially solid nickel material.
摘要翻译：提供了一种用于半导体晶片处理系统的喷头的面板。面板具有多个气体通道，以在工艺区域内提供多个气体，而不会在这些气体到达反应室内的处理区域之前混合。喷头包括面板和气体分配歧管组件。面板限定了多个第一气体孔，其将来自歧管组件的第一气体通过面板传送到处理区域，以及将多个第二气体孔连接到径向增压室的多个通道，其将从第二气体接收第二气体歧管组件。面板和歧管组件各自由基本上固体的镍材料制成。

6. 发明授权

US5882419A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US5882419A
公开(公告)日：1999-03-16
申请号：US939962
申请日：1997-09-29
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, and a positioning assembly aligns the substrate to the receiving plate. In some embodiments, the invention may include a stem interconnected to the substrate, a heat limiting member disposed about the stem, and a shroud extending about the stem.
摘要翻译：改进的沉积室将有用的层沉积在基底上。改进的腔室包括衬底边缘保护系统，其与净化气体组合地保护衬底的边缘和下侧的选定部分与沉积气体同时防止在衬底边缘上产生掩蔽区域。基板支撑在固体接收板上，并且定位组件将基板对准接收板。在一些实施例中，本发明可以包括连接到基板的杆，围绕杆设置的限热构件和围绕杆延伸的护罩。

7. 发明授权

US5766365A Removable ring for controlling edge deposition in substrate processing apparatus 失效
标题翻译：用于控制基板处理装置中的边缘沉积的可拆卸环
公开(公告)号：US5766365A
公开(公告)日：1998-06-16
申请号：US472220
申请日：1995-06-07
申请人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
发明人： Salvador P. Umotoy , Alan F. Morrison , Karl A. Littau , Richard A. Marsh , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/68 , H01L21/683 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/6833 , H01L21/68735 , H01L21/68792
摘要： A substrate processing apparatus comprising a processing chamber in which a substrate support is located. The substrate support, which is in the form of a heater pedestal, has a surface dimensioned to receive the substrate, and is circumscribed by a removable purge ring which defines an annulus between itself and the pedestal. At the outer edge of the pedestal is a purge gas manifold, in the form of a cavity between the purge ring and the pedestal. The lower end of the manifold is sealed by means of a mechanical seal that is formed at process temperature as the pedestal expands from heating and comes into contact with the purge ring's lower edge. The upper end of the manifold opens into the annulus defined by the purge ring and the pedestal. The manifold is arranged so that during processing, purge gas is injected into the manifold and projected toward the edge of a substrate received on the surface of the pedestal. This gas moves upwards through the annulus defined between the purge ring and the substrate support. Consequently, processing gas is prevented from contacting the extreme edge portion of the substrate. This reduces unwanted deposition on the peripheral edge and lower surface of the substrate.
摘要翻译：一种基板处理装置，包括其中位于基板支撑件的处理室。处于加热器基座形式的衬底支撑件具有尺寸适于接收衬底的表面，并且由可拆卸的清除环限定，该清除环在其与底座之间限定环形空间。在基座的外边缘处是净化气体歧管，其形式为清洗环和基座之间的空腔。歧管的下端通过机械密封进行密封，机械密封在工艺温度下形成，因为基座从加热膨胀并与清洗环的下边缘接触。歧管的上端开口进入由清洗环和基座限定的环形空间。歧管被布置成使得在处理期间，吹扫气体被注入到歧管中并且朝着接收在基座的表面上的基板的边缘突出。该气体向上移动通过清洗环和衬底支撑件之间限定的环形空间。因此，防止处理气体与基板的最外缘部分接触。这减少了衬底的外围边缘和下表面上的不希望的沉积。

8. 发明授权

US5695568A Chemical vapor deposition chamber 失效
标题翻译：化学气相沉积室
公开(公告)号：US5695568A
公开(公告)日：1997-12-09
申请号：US200862
申请日：1994-02-23
申请人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
发明人： Ashok Sinha , Mei Chang , Ilya Perlov , Karl Littau , Alan Morrison , Lawrence Chung-Lai Lei
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4412 , C23C16/45521 , C23C16/458 , C23C16/4583 , C23C16/4585 , C23C16/46 , H01L21/67103 , H01L21/68 , H01L21/68721 , H01L21/68728 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H01L21/68792 , Y10S438/935
摘要： An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate is supported on a solid receiving plate, which is supported by a stem having a heat limiting member and a shroud to protect the stem and a positioning assembly aligns the substrate to the receiving plate.
摘要翻译：改进的沉积室将有用的层沉积在基底上。改进的腔室包括衬底边缘保护系统，其与净化气体组合地保护衬底的边缘和下侧的选定部分与沉积气体同时防止在衬底边缘上产生掩蔽区域。基底支撑在固体接受板上，固体接收板由具有限热构件和护罩的杆支撑，以保护杆，并且定位组件将衬底对准接收板。

9. 发明申请

US20180282864A1 APPARATUS AND METHOD OF TURNING OVER A SUBSTRATE IN A SUBSTRATE PROCESSING SYSTEM 审中-公开
公开(公告)号：US20180282864A1
公开(公告)日：2018-10-04
申请号：US15905742
申请日：2018-02-26
申请人： Lawrence Chung-Lai Lei
发明人： Lawrence Chung-Lai Lei
IPC分类号： C23C16/458 , H01L31/18 , B65G47/248
摘要： A device for manipulating at least a first row of wafers and a second row of wafers, includes: a first holder configured to hold the first row of wafers, the first holder having a first rod and a second rod, the first rod and the second rod of the first holder defining a space therebetween for accommodating the first row of wafers, wherein a distance between the first rod and the second rod of the first holder is variable; and a second holder configured to hold the second row of wafers, the second holder having a first rod and a second rod, the first rod and the second rod of the second holder defining a space therebetween for accommodating the second row of wafers, wherein a distance between the first rod and the second rod of the second holder is variable.

10. 发明申请

US20110151119A1 Methods and Systems of Transferring, Docking and Processing Substrates 有权
标题翻译：转移，对接和处理基板的方法和系统
公开(公告)号：US20110151119A1
公开(公告)日：2011-06-23
申请号：US13038309
申请日：2011-03-01
申请人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
发明人： Lawrence Chung-Lai Lei , Alfred Mak , Rex Liu , Kon Park , Samuel S. Pak , Tzy-Chung Terry Wu , Simon Zhu , Ronald L. Rose , Gene Shin , Xiaoming Wang
IPC分类号： H01L21/677 , H01L21/673 , C23C16/44 , C23C16/458 , C23C16/56
CPC分类号： H01L21/67173 , H01L21/6719 , H01L21/67706 , H01L21/67712 , H01L21/67727 , H01L21/67736 , H01L21/67748 , Y10S414/135
摘要： In accordance with some embodiments described herein, a method for transferring a substrate to two or more process modules is provided, comprising loading at least one substrate into one or more mobile transverse chambers, the mobile transverse chambers being carried on a rail positioned adjacent to the two or more process modules, and wherein each mobile transverse chamber is configured to maintain a specified gas condition during conveyance of the substrate. One or more drive systems are actuated to propel at least one of the one or more mobile transverse chambers along the rail. The at least one mobile transfer chamber docks to at least one of the process modules, and the substrate is conveyed from the mobile transverse chamber to the at least one process modules.
摘要翻译：根据本文描述的一些实施例，提供了一种用于将衬底转移到两个或更多个工艺模块的方法，包括将至少一个衬底加载到一个或多个移动横向室中，所述移动横向室承载在邻近两个或更多个处理模块，并且其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。一个或多个驱动系统被致动以沿着轨道推进一个或多个移动横向室中的至少一个。所述至少一个移动传送室与所述处理模块中的至少一个对接，并且所述基板从所述移动横向室传送到所述至少一个处理模块。

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