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41. 发明授权

US07151053B2 Method of depositing dielectric materials including oxygen-doped silicon carbide in damascene applications 有权
标题翻译：在大马士革应用中沉积包括掺杂氧化硅的电介质材料的方法
公开(公告)号：US07151053B2
公开(公告)日：2006-12-19
申请号：US11118678
申请日：2005-04-28
申请人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
发明人： Ju-Hyung Lee , Ping Xu , Shankar Venkataraman , Li-Qun Xia , Fei Han , Ellie Yieh , Srinivas D. Nemani , Kangsub Yim , Farhad K. Moghadam , Ashok K. Sinha , Yi Zheng
IPC分类号： H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/76834 , C23C16/30 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31138 , H01L21/31144 , H01L21/312 , H01L21/3122 , H01L21/3127 , H01L21/31633 , H01L21/76807 , H01L21/7681 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： Methods are provided for depositing an oxygen-doped dielectric layer. The oxygen-doped dielectric layer may be used for a barrier layer or a hardmask. In one aspect, a method is provided for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas comprising an oxygen-containing organosilicon compound, carbon dioxide, or combinations thereof, and an oxygen-free organosilicon compound to the processing chamber, and reacting the processing gas to deposit an oxygen-doped dielectric material on the substrate, wherein the dielectric material has an oxygen content of about 15 atomic percent or less. The oxygen-doped dielectric material may be used as a barrier layer in damascene or dual damascene applications.
摘要翻译：提供了用于沉积氧掺杂介电层的方法。氧掺杂介电层可用于阻挡层或硬掩模。在一个方面，提供了一种处理衬底的方法，包括将衬底定位在处理室中，将包含含氧有机硅化合物，二氧化碳或其组合的处理气体和无氧有机硅化合物引入到处理并且使所述处理气体反应以在所述衬底上沉积掺杂氧的电介质材料，其中所述介电材料的氧含量为约15原子％或更低。氧掺杂的电介质材料可以用作镶嵌或双镶嵌应用中的阻挡层。

42. 发明授权

US06372633B1 Method and apparatus for forming metal interconnects 失效
标题翻译：用于形成金属互连的方法和装置
公开(公告)号：US06372633B1
公开(公告)日：2002-04-16
申请号：US09111657
申请日：1998-07-08
申请人： Dan Maydan , Ashok K. Sinha , Zheng Xu , Liang-Yu Chen , Roderick Craig Mosely , Daniel Carl , Diana Xiaobing Ma , Yan Ye , Wen Chiang Tu
发明人： Dan Maydan , Ashok K. Sinha , Zheng Xu , Liang-Yu Chen , Roderick Craig Mosely , Daniel Carl , Diana Xiaobing Ma , Yan Ye , Wen Chiang Tu
IPC分类号： H01L214763
CPC分类号： H01L21/76838 , H01L21/32136 , H01L21/76885
摘要： The present invention provides a method and apparatus for forming reliable interconnects in which the overlap of the line over the plug or via is minimized or eliminated. In one aspect, a barrier plug comprised of a conductive material, such as tungsten, is deposited over the via to provide an etch stop during line etching and to prevent diffusion of the metal, such as copper, into the surrounding dielectric material if the line is misaligned over the via. Additionally, the barrier plug prevents an overall reduction in resistance of the interconnect and enables reactive ion etching to be employed to form the metal line. In another aspect, reactive ion etching techniques are employed to selectively etch the metal line and the barrier layer to provide a controlled etching process which exhibits selectivity for the metal line, then the barrier and then the via or plug.
摘要翻译：本发明提供了一种用于形成可靠互连的方法和装置，其中使插塞或通孔上的线重叠最小化或消除。在一个方面，由诸如钨的导电材料构成的阻挡塞沉积在通孔上，以在线蚀刻期间提供蚀刻停止并且防止金属（例如铜）扩散到周围的介电材料中，如果线在通道上不对齐。此外，阻挡塞防止互连的电阻的总体降低，并且能够使用反应离子蚀刻来形成金属线。在另一方面，使用反应离子蚀刻技术来选择性地蚀刻金属线和阻挡层，以提供对金属线，然后是屏障，然后是通孔或插塞的选择性的受控蚀刻工艺。

43. 发明授权

US06277249B1 Integrated process for copper via filling using a magnetron and target producing highly energetic ions 失效
标题翻译：通过使用磁控管进行填充的铜的集成工艺和产生高能离子的靶
公开(公告)号：US06277249B1
公开(公告)日：2001-08-21
申请号：US09518180
申请日：2000-03-02
申请人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
发明人： Praburam Gopalraja , Jianming Fu , Fusen Chen , Girish Dixit , Zheng Xu , Sankaram Athreya , Wei D. Wang , Ashok K. Sinha
IPC分类号： C23C1435
CPC分类号： H01L21/76844 , C23C14/35 , H01J37/3405 , H01J37/342 , H01J37/3423 , H01J37/3455 , H01J37/3458 , H01L21/2855 , H01L21/76805 , H01L21/76843 , H01L21/76862 , H01L21/76865 , H01L21/76873 , H01L2221/1089
摘要： A target and magnetron for a plasma sputter reactor. The target has an annular trough facing the wafer to be sputter coated. Various types of magnetic means positioned around the trough create a magnetic field supporting a plasma extending over a large volume of the trough. For example, the magnetic means may include magnets disposed on one side within a radially inner wall of the trough and on another side outside of a radially outer wall of the trough to create a magnetic field extending across the trough, to thereby support a high-density plasma extending from the top to the bottom of the trough. The large plasma volume increases the probability that the sputtered metal atoms will become ionized. The magnetic means may include a magnetic coil, may include additional magnets in back of the trough top wall to increase sputtering there, and may include confinement magnets near the bottom of the trough sidewalls. The magnets in back of the top wall may have an outer magnet surrounding an inner magnet of the opposite polarity. The high aspect ratio of the trough also reduces asymmetry in coating the sidewalls of a deep hole at the edge of the wafer. An integrated copper via filling process includes a first step of highly ionized sputter deposition of copper, a second step of more neutral, lower-energy sputter deposition of copper to complete the seed layer, and electroplating copper into the hole to complete the metallization.
摘要翻译：用于等离子体溅射反应器的靶和磁控管。目标具有面向待溅射涂覆的晶片的环形槽。位于槽周围的各种磁性装置形成一个支撑等离子体的磁场，该等离子体延伸在大容积的槽上。例如，磁性装置可以包括设置在槽的径向内壁中的一侧上并且在槽的径向外壁外侧的另一侧上的磁体，以产生延伸穿过槽的磁场，密度等离子体从槽的顶部延伸到底部。大的等离子体体积增加了溅射的金属原子将被电离的可能性。磁性装置可以包括磁性线圈，可以在槽顶壁的后面包括另外的磁体，以在那里增加溅射，并且可以包括靠近槽侧壁底部的约束磁体。顶壁后面的磁体可以具有围绕相反极性的内磁体的外磁体。槽的高纵横比也降低了在晶片边缘涂覆深孔侧壁的不对称性。集成的铜通孔填充工艺包括铜的高度电离溅射沉积的第一步骤，更中性的，更低能量的溅射沉积铜以完成种子层的第二步骤，以及将铜电镀到孔中以完成金属化。

44. 发明授权

US06170428B2 Symmetric tunable inductively coupled HDP-CVD reactor 失效
标题翻译：对称可调谐电感耦合HDP-CVD反应堆
公开(公告)号：US06170428B2
公开(公告)日：2001-01-09
申请号：US08679927
申请日：1996-07-15
申请人： Fred C. Redeker , Farhad Moghadam , Hiroji Hanawa , Tetsuya Ishikawa , Dan Maydan , Shijian Li , Brian Lue , Robert J. Steger , Manus Wong , Yaxin Wong , Ashok K. Sinha
发明人： Fred C. Redeker , Farhad Moghadam , Hiroji Hanawa , Tetsuya Ishikawa , Dan Maydan , Shijian Li , Brian Lue , Robert J. Steger , Manus Wong , Yaxin Wong , Ashok K. Sinha
IPC分类号： C23C1600
CPC分类号： H01J37/32449 , C23C16/507 , H01J37/321 , H01J37/32467 , H01J37/32522 , H01J37/32862
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.
摘要翻译：本发明提供一种使用同时沉积和溅射掺杂和未掺杂的二氧化硅的HDP-CVD工具，其能够在具有高于1.2:1的纵横比的0.5微米特征尺寸的晶片上具有优异的间隙填充和覆盖膜沉积。本发明的系统包括：双RF区电感耦合等离子体源配置，其能够跨晶片产生径向可调离子电流; 双区气体分配系统，以在晶片表面上提供均匀的沉积性能; 温度控制表面，以改善膜的附着力并控制外来颗粒的产生; 一个对称成形的涡轮分子抽吸室体，以消除气体流动或等离子体地面方位不对称性; 双氦冷却区静电卡盘，在加工过程中提供并保持晶圆温度均匀; 全陶瓷/铝合金室结构，可消除室内耗材; 以及远程氟基等离子体室清洁系统，用于无卡盘盖板的高室清洁率。

45. 发明授权

US6109206A Remote plasma source for chamber cleaning 失效
标题翻译：远程等离子体源用于室内清洁
公开(公告)号：US6109206A
公开(公告)日：2000-08-29
申请号：US864995
申请日：1997-05-29
申请人： Dan Maydan , Romuald Nowak , Ashok K. Sinha
发明人： Dan Maydan , Romuald Nowak , Ashok K. Sinha
IPC分类号： C23C16/44 , H01J37/32 , H01L21/00 , C23C16/00 , C23C14/34
CPC分类号： H01L21/67028 , C23C16/4405 , H01J37/32862 , Y10S156/916
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.
摘要翻译：本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

46. 发明授权

US5476548A Reducing backside deposition in a substrate processing apparatus through the use of a shadow ring 失效
标题翻译：通过使用阴影环来减少衬底处理设备中的背面沉积
公开(公告)号：US5476548A
公开(公告)日：1995-12-19
申请号：US263617
申请日：1994-06-20
申请人： Lawrence C. Lei , Cissy S. Leung , Eric A. Englhardt , Ashok K. Sinha
发明人： Lawrence C. Lei , Cissy S. Leung , Eric A. Englhardt , Ashok K. Sinha
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C30B25/14 , H01L21/205 , H01L21/285 , H01L21/683 , C23C16/00 , B05C13/00 , H01L21/00
CPC分类号： C23C16/45521 , C23C16/4585 , C30B25/14 , H01L21/6838
摘要： A substrate processing apparatus for processing a substrate having a peripheral edge, an upper surface for processing and a lower surface lying on a support. The apparatus includes a processing chamber which houses the substrate support, in the form of a heater pedestal including a substrate receiving surface for receiving the lower surface of the substrate. A circumscribing shadow ring is located around the pedestal to cover peripheral edge portion of the substrate. The shadow ring also defines a cavity, between itself and the pedestal, at the peripheral edge of the substrate. In operation, the chamber receives processing gas at a first pressure and purge gas is introduced into the cavity, between the ring and the pedestal, at a second pressure which is greater than the first pressure. Fluid conduits are provided to enhance the flow of the purge gas away from the peripheral edge of the substrate.
摘要翻译：一种基板处理装置，用于处理具有外围边缘的基板，用于加工的上表面和位于支撑件上的下表面。该设备包括处理室，该处理室以加热器底座的形式容纳衬底支撑件，该加热器基座包括用于接收衬底的下表面的衬底接收表面。位于基座周围的外接阴影环覆盖基板的周边部分。阴影环还在基板的周边边缘处限定了在其自身与基座之间的空腔。在操作中，室以第一压力接收处理气体，并且净化气体以大于第一压力的第二压力被引入空腔中，在环和基座之间。提供流体导管以增强净化气体远离衬底的周边边缘的流动。

47. 发明授权

US5356659A Metallization for semiconductor devices 失效
标题翻译：半导体器件的金属化
公开(公告)号：US5356659A
公开(公告)日：1994-10-18
申请号：US131277
申请日：1993-10-04
申请人： Desu Seshubabu , Hans P. W. Hey , Ashok K. Sinha
发明人： Desu Seshubabu , Hans P. W. Hey , Ashok K. Sinha
IPC分类号： H01L23/52 , H01L21/3205 , H01L21/768 , H01L23/532 , C23C16/00
CPC分类号： H01L23/53223 , H01L21/76886 , H01L2924/0002 , Y10S438/937
摘要： A low temperature chemical vapor deposition process is used to encapsulate aluminum conductors on the surface of a silicon substrate to form bimetallic conductors. The refractory material is desirably tungsten.
摘要翻译：使用低温化学气相沉积工艺将铝导体封装在硅衬底的表面上以形成双金属导体。耐火材料最好是钨。

48. 发明授权

US5292554A Deposition apparatus using a perforated pumping plate 失效
标题翻译：使用穿孔泵板的沉积设备
公开(公告)号：US5292554A
公开(公告)日：1994-03-08
申请号：US975251
申请日：1992-11-12
申请人： Ashok K. Sinha , Steve G. Ghanayem , Virendra V. S. Rana
发明人： Ashok K. Sinha , Steve G. Ghanayem , Virendra V. S. Rana
IPC分类号： C30B25/12 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , C30B25/14 , H01L21/205 , H01L21/285 , H01L21/31 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45591 , C23C16/54 , H01L21/68721
摘要： In a deposition apparatus, a barrier is used to separate a process gas section from the section of the chamber below the substrate on which a metal layer is deposited. The substrate is supported on a support. During an unloading stage, purge gas is introduced into the chamber below the substrate. To prevent the substrate from being moved on the support by the purge gas, the barrier is perforated so that the process gas can flow through the barrier and into a vacuum manifold system.
摘要翻译：在沉积设备中，使用阻挡层将工艺气体部分与沉积有金属层的衬底下面的腔室部分分开。基板支撑在支撑件上。在卸载阶段，吹扫气体被引入基板下面的室中。为了防止衬底通过吹扫气体在支撑体上移动，屏障被穿孔，使得工艺气体可以流过阻挡层并进入真空歧管系统。

49. 发明授权

US4756189A Method and apparatus for determining characteristics of clay-bearing formations 失效
公开(公告)号：US4756189A
公开(公告)日：1988-07-12
申请号：US829340
申请日：1986-02-14
申请人： Walter H. Fertl , Ashok K. Sinha
发明人： Walter H. Fertl , Ashok K. Sinha
IPC分类号： E21B49/00 , G01V11/00
CPC分类号： G01V11/00 , E21B49/00
摘要： The volume of clay within clay-bearing formations is determined throughout the formations. This volume of clay is then functionally related to measurements indicative of the formations. Utilizing measured formation characteristics representative of different clay types, such as potassium content or bound water content, the formation porosity measurements are extrapolated to indicate the porosity log measurements which would be yielded if the logging devices were responsive only to the clay within the formations. In addition the cation exchange capacity and the hydrogen index are used to determine volume, types and distribution of clays. These extrapolated measurements are then related to known or determinable formation characteristics to determine additional formation properties such as porosity, permeability, and fluid saturation characteristics.

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