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41. 发明申请

US20110092051A1 PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP 有权
标题翻译：包含包含创建步骤的薄膜转移过程
公开(公告)号：US20110092051A1
公开(公告)日：2011-04-21
申请号：US12977757
申请日：2010-12-23
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/302 , H01L21/306 , H01L21/31
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

42. 发明授权

US07906362B2 Assembling two substrates by molecular adhesion 有权
标题翻译：通过分子粘附装配两个底物
公开(公告)号：US07906362B2
公开(公告)日：2011-03-15
申请号：US11630283
申请日：2005-06-29
申请人： Guy Feuillet , Hubert Moriceau , Stephane Pocas , Eric Jalaguier , Norbert Moussy
发明人： Guy Feuillet , Hubert Moriceau , Stephane Pocas , Eric Jalaguier , Norbert Moussy
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/31 , H01L21/469
CPC分类号： H01L27/14636 , H01L24/83 , H01L27/14634 , H01L33/0079 , H01L2224/83801 , H01L2224/83894 , H01L2924/01079 , H01L2924/01087 , H01L2924/07811 , Y10T29/49126 , H01L2924/3512 , H01L2924/00
摘要： An assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, the faces being located facing each other, at least one of the substrates having a surface topography. The method forms an intermediate layer including at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of the faces of substrates to each other from a topographic point of view, resistivity and/or thickness of the intermediate layer being chosen to enable the local electrical bonds, brings the two faces into contact, the substrates positioned to create electrical bonds between areas on the first substrate and corresponding areas on the second substrate, and bonds the faces by molecular bonding.
摘要翻译：一种组装方法，用于实现位于第一基板的表面上的区域和位于第二基板的表面上的对应区域之间的局部电粘合，所述表面彼此面对，所述基板中的至少一个具有表面形貌。该方法形成中间层，其包括在基底的表面上的至少一个埋置层或具有表面形貌的基底，以使其（它们）与基底的表面的分子结合相互匹配，从地形的角度来看，电阻率和/或中间层的厚度被选择以实现局部电接合，使两个面接触，所述基板被定位成在第一基板上的区域和第二基板上的对应区域之间产生电粘合，并且通过分子键合。

43. 发明申请

US20100200770A1 Solid Immersion Lens and Related Method for Making Same 失效
标题翻译：固体浸没透镜及其相关方法
公开(公告)号：US20100200770A1
公开(公告)日：2010-08-12
申请号：US12678730
申请日：2008-09-16
申请人： Mickaël Brun , Salim Mimouni , Sergio Nicoletti , Ludovic Poupinet , Hubert Moriceau
发明人： Mickaël Brun , Salim Mimouni , Sergio Nicoletti , Ludovic Poupinet , Hubert Moriceau
IPC分类号： G21K1/06 , G02B3/00 , G02B27/12 , C03C15/00
CPC分类号： G01Q60/22 , B29D11/00009 , B29D11/00346 , G01Q70/12 , G11B7/1374 , G11B7/1387
摘要： The invention generally pertains to the field of solid immersion lenses for optical applications in high resolution microscopy. The lens of the invention includes a spherical sector limited by a planar surface and an object having nanometric dimensions arranged on the planar surface at the focus of said solid immersion lens. A light-opaque layer having a central opening with nanometric dimensions can be provided on the planar surface, said opening being centred on the focus of the solid immersion lens. The nano-object can be a tube or a thread having a cylindrical shape. The lens of the invention can be made using lithography techniques.
摘要翻译：本发明一般涉及在高分辨率显微镜中用于光学应用的固体浸没透镜领域。本发明的透镜包括由平面表面限制的球形部分和在所述固体浸没透镜的焦点处的平面表面上具有纳米尺寸的物体。具有纳米尺寸的中心开口的不透光层可以设置在平坦表面上，所述开口以固体浸没透镜的焦点为中心。纳米物体可以是具有圆柱形状的管或线。本发明的透镜可以使用光刻技术制成。

44. 发明授权

US07586154B2 Method for fabricating a substrate with useful layer on high resistivity support 有权
标题翻译：在高电阻率支撑件上制造具有有用层的衬底的方法
公开(公告)号：US07586154B2
公开(公告)日：2009-09-08
申请号：US11831217
申请日：2007-07-31
申请人： Bruno Ghyselen , Hubert Moriceau
发明人： Bruno Ghyselen , Hubert Moriceau
IPC分类号： H01L21/30
CPC分类号： H01L21/3225 , H01L21/3226 , H01L21/76254 , H01L29/32
摘要： A substrate suitable for producing a high frequency electronic circuit. This substrate includes a support substrate having a controlled amount of interstitial oxygen and which is treated to precipitate at least some of the oxygen therein; and a useful layer supported by the support substrate. Advantageously, the support substrate has high resistivity and includes oxygen precipitates beneath the useful layer while also being free of depleted zones of oxygen precipitates adjacent the useful layer. This is prepared by the methods disclosed herein which are applicable in particular to SOI substrates.
摘要翻译：适用于生产高频电子电路的衬底。该衬底包括具有受控量的间隙氧的支撑衬底，并被处理以沉淀其中的至少一部分氧; 以及由支撑基板支撑的有用层。有利地，支撑衬底具有高电阻率并且在有用层下方包括氧沉淀物，同时也没有与有用层相邻的氧沉淀物的耗尽区域。这通过本文所公开的方法制备，其特别适用于SOI衬底。

45. 发明申请

US20090162991A1 PROCESS FOR ASSEMBLING SUBSTRATES WITH LOW-TEMPERATURE HEAT TREATMENTS 审中-公开
标题翻译：用低温热处理装配基板的方法
公开(公告)号：US20090162991A1
公开(公告)日：2009-06-25
申请号：US12296250
申请日：2007-04-06
申请人： Rémi Beneyton , Hubert Moriceau , Frank Fournel , Francois Rieutord , Yannick Le Tiec
发明人： Rémi Beneyton , Hubert Moriceau , Frank Fournel , Francois Rieutord , Yannick Le Tiec
IPC分类号： H01L21/30 , B32B37/06 , B32B38/10
CPC分类号： C09J5/06
摘要： The invention relates to a process for producing a bond between a first and a second substrate (2, 4), comprising: a) a step of preparing surfaces (6, 8) to be assembled, b) an assembly of these two surfaces, by direct molecular bonding, c) a heat treatment step involving at least maintaining the temperature within the range of 50° C. to 100° C. for at least one hour.
摘要翻译：本发明涉及一种用于在第一和第二基底（2,4）之间产生粘结的方法，包括：a）制备待组装的表面（6,8）的步骤，b）这两个表面的组装，通过直接分子键合，c）热处理步骤，其至少将温度保持在50℃至100℃的范围内至少1小时。

46. 发明申请

US20090095399A1 METHOD FOR TRIMMING A STRUCTURE OBTAINED BY THE ASSEMBLY OF TWO PLATES 有权
标题翻译：用于调整由两板组装获得的结构的方法
公开(公告)号：US20090095399A1
公开(公告)日：2009-04-16
申请号：US11722115
申请日：2005-12-22
申请人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
发明人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
IPC分类号： B32B37/02
CPC分类号： H01L21/02008 , H01L21/76251 , H01L21/76254 , Y10T156/10
摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.
摘要翻译：一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一晶片，其中修整涉及第一晶片。该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

47. 发明申请

US20070232025A1 PROCESS FOR THE TRANSFER OF A THIN FILM 有权
标题翻译：转印薄膜的方法
公开(公告)号：US20070232025A1
公开(公告)日：2007-10-04
申请号：US11747733
申请日：2007-05-11
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

48. 发明申请

US20070072391A1 Method of sealing two plates with the formation of an ohmic contact therebetween 有权
标题翻译：密封两块板之间形成欧姆接触的方法
公开(公告)号：US20070072391A1
公开(公告)日：2007-03-29
申请号：US10584052
申请日：2004-12-21
申请人： Stephane Pocas , Hubert Moriceau , Jean-Francois Michaud
发明人： Stephane Pocas , Hubert Moriceau , Jean-Francois Michaud
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/187 , H01L21/26506 , H01L21/266
摘要： The invention relates to a sealing process for two wafers (2, 12) made of semiconducting materials, comprising: a step for implantation of metallic species (4) in at least the first wafer, a step for assembly of the first and second wafer, an annealing step.
摘要翻译：本发明涉及用于由半导体材料制成的两个晶片（2,12）的密封工艺，包括：在至少第一晶片中注入金属物质（4）的步骤，用于组装第一和第二晶片的步骤，退火步骤。

49. 发明申请

US20060286770A1 Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效
标题翻译：用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层
公开(公告)号：US20060286770A1
公开(公告)日：2006-12-21
申请号：US11509047
申请日：2006-08-24
申请人： Bruno Ghyselen , Cecile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
发明人： Bruno Ghyselen , Cecile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译：一种用于制造半导体结构的方法，所述半导体结构在衬底上包括至少一个有用层。该方法包括提供源极基底中的弱化区域，其在弱化区域和源极基底的前面之间限定相对较厚的有用层; 将源极基板的正面粘合到支撑基板上，并在弱化区域将有用层与源极基板分离，以将有用层转移到支撑基板; 将原子物质植入有用层的自由面中，以在其中形成受控的平均注入深度，以在限定前后有用层的有用层内形成弱化区，其中后部有用层与源极基底和前部有用层接触含有较大浓度的缺陷; 在加入原子物质之后将加强基底粘合到前有用层的自由面上; 并且沿着弱化区从后部有用层分离前部有用层，以形成包括支撑基板和其上的后部有用层的半导体结构。所获得的结构可用于电子学，光电子学或光学领域。

50. 发明授权

US06809044B1 Method for making a thin film using pressurization 有权
标题翻译：使用加压制造薄膜的方法
公开(公告)号：US06809044B1
公开(公告)日：2004-10-26
申请号：US10018757
申请日：2002-03-20
申请人： Bernard Aspar , Michel Bruel , Hubert Moriceau
发明人： Bernard Aspar , Michel Bruel , Hubert Moriceau
IPC分类号： H01L21425
CPC分类号： H01L21/76251 , H01L21/2007 , Y10S438/977
摘要： The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising: the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities, partial or total separation of the thin film from the rest of the substrate (1), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face (2).
摘要翻译：本发明涉及从具有平面（2）的固体材料的基材（1）开始制造薄膜的方法，该方法包括：将气态化合物注入基材（1）中以形成一个微孔（4）在与所述薄膜的厚度对应的所述平面（2）的深度处，气态化合物在可能削弱微腔层的基底的条件下被注入，部分或全部分离从基板（1）的其余部分的薄膜，该分离包括添加热能并将压力施加到所述平面（2）的步骤。

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