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1. 发明申请

US20070072391A1 Method of sealing two plates with the formation of an ohmic contact therebetween 有权
标题翻译：密封两块板之间形成欧姆接触的方法
公开(公告)号：US20070072391A1
公开(公告)日：2007-03-29
申请号：US10584052
申请日：2004-12-21
申请人： Stephane Pocas , Hubert Moriceau , Jean-Francois Michaud
发明人： Stephane Pocas , Hubert Moriceau , Jean-Francois Michaud
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/187 , H01L21/26506 , H01L21/266
摘要： The invention relates to a sealing process for two wafers (2, 12) made of semiconducting materials, comprising: a step for implantation of metallic species (4) in at least the first wafer, a step for assembly of the first and second wafer, an annealing step.
摘要翻译：本发明涉及用于由半导体材料制成的两个晶片（2,12）的密封工艺，包括：在至少第一晶片中注入金属物质（4）的步骤，用于组装第一和第二晶片的步骤，退火步骤。

2. 发明申请

US20070037363A1 Method for forming a brittle zone in a substrate by co-implantation 审中-公开
标题翻译：通过共同植入在基底中形成脆性区的方法
公开(公告)号：US20070037363A1
公开(公告)日：2007-02-15
申请号：US10534199
申请日：2004-05-27
申请人： Bernard Aspar , Christelle Lagahe , Nicolas Sousbie , Jean-Francois Michaud
发明人： Bernard Aspar , Christelle Lagahe , Nicolas Sousbie , Jean-Francois Michaud
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/26506 , H01L21/76254
摘要： The invention concerns a method for making a thin film, which consists in creating a brittle zone embedded by implantation of a chemical species in a substrate, so as to be able subsequently to provoke a fracture of the substrate along said brittle zone to separate therefrom said thin film. The invention is characterized in that the manufacturing method comprises in particular the following steps: a) a first implantation in the substrate at a first depth of a first chemical species; b) implanting at least one second chemical species in the substrate, at a second depth different from said first depth, and at a concentration higher than the concentration of the first species, where the at least a second chemical species is less efficient than the first chemical species for embrittling the substrate; c) diffusing at least part of said secondary species to the vicinity of the first depth; and d) initiating a fracture along the first depth. The invention also concerns the thin film obtained by the inventive method.
摘要翻译：本发明涉及一种制造薄膜的方法，该方法包括通过在基材中注入化学物质来产生嵌入的脆性区域，从而能够随后沿着所述脆性区域引起基底的断裂，从而将基底分离成所述薄膜。本发明的特征在于，制造方法特别包括以下步骤：a）在第一化学物质的第一深度处在基底中第一次注入; b）在不同于所述第一深度的第二深度处植入衬底中的至少一种第二化学物质，并且以比第一物质的浓度高的浓度植入至少一种第二化学物质，其中至少第二化学物质比第一物质的效率低用于脆化底物的化学物质; c）将所述第二种类的至少一部分扩散到第一深度附近; 和d）沿着第一深度开始断裂。本发明还涉及通过本发明方法获得的薄膜。

3. 发明授权

US4564763A Process and apparatus for varying the deflection of the path of a charged particle beam 失效
标题翻译：用于改变带电粒子束路径的偏转的方法和装置
公开(公告)号：US4564763A
公开(公告)日：1986-01-14
申请号：US517394
申请日：1983-07-26
申请人： Michel Bruel , Jean-Francois Michaud
发明人： Michel Bruel , Jean-Francois Michaud
IPC分类号： H01J3/26 , H01J37/147 , H01J37/317 , G21K1/08 , H01J3/00
CPC分类号： H01J37/1475 , H01J3/26 , H01J37/317
摘要： Process and apparatus for varying the deflection of the path of a charged particle beam over a path of length l in a space volume V, where there is a magnetic induction B (x,y,z), wherein a relative displacement of volume V with respect to the beam is produced in such a way as to vary the magnitude .intg.BDl calculated along the path and characterizing the deflection undergone by the beam on passing through volume V. In some of the embodiments rotating magnetic pole pieces are employed to vary the path. Fixed inclined faced pole pieces are also employed.
摘要翻译：用于改变空间体积V中具有长度为l的路径上的带电粒子束的路径的偏转的方法和装置，其中存在磁感应B（x，y，z），其中体积V与产生相对于光束的方式，以改变沿着路径计算的幅度INTEGRAL BD1并且表征通过光束通过体积V时所经受的偏转。在一些实施例中，使用旋转磁极片来改变路径。也采用固定的倾斜面极片。

4. 发明授权

US4527044A Apparatus for treating a sample by a pulsed electron beam 失效
标题翻译：用于通过脉冲电子束处理样品的装置
公开(公告)号：US4527044A
公开(公告)日：1985-07-02
申请号：US370386
申请日：1982-04-21
申请人： Michel Bruel , Michel Floccari, deceased , Jean-Francois Michaud
发明人： Michel Bruel , Michel Floccari, deceased , Jean-Francois Michaud
IPC分类号： H01L21/265 , H01J37/24 , H01J37/305 , B23K15/00 , B23K9/00
CPC分类号： H01J37/24 , H01J37/305
摘要： The invention relates to an apparatus for treating samples comprising in a vacuum enclosure a cathode, an actual anode and a grid, as well as means for supplying the sample to the enclosure, a high voltage generator, a capacitor C.sub.1 charged by way of the said generator, a spark gap switch for producing a high energy pulse between the cathode and the grid, said switch being connected to one terminal of said capacitor, an element for producing pulses controlling the spark gap switch and a capacitor C.sub.2 having a capacitance above that of capacitor C.sub.1, charged by way of the generator used for producing between the actual anode and the cathode an electric field for accelerating and extracting electrons used for the bombardment of the sample.
摘要翻译：本发明涉及一种用于处理样品的装置，包括在真空室中阴极，实际阳极和电网，以及用于将样品供应到外壳的装置，高压发生器，通过所述电极充电的电容器C1 发电机，用于在阴极和电网之间产生高能量脉冲的火花隙开关，所述开关连接到所述电容器的一个端子，用于产生控制火花隙开关的脉冲的元件和电容器C2，其电容高于电容器C1通过用于在实际阳极和阴极之间产生的发生器进行充电，用于加速和提取用于轰击样品的电子的电场。

5. 发明授权

US08975156B2 Method of sealing two plates with the formation of an ohmic contact therebetween 有权
标题翻译：密封两块板之间形成欧姆接触的方法
公开(公告)号：US08975156B2
公开(公告)日：2015-03-10
申请号：US10584052
申请日：2004-12-21
申请人： Stephane Pocas , Hubert Moriceau , Jean-Francois Michaud
发明人： Stephane Pocas , Hubert Moriceau , Jean-Francois Michaud
IPC分类号： H01L21/00 , H01L21/46 , H01L21/18 , H01L21/265 , H01L21/266
CPC分类号： H01L21/187 , H01L21/26506 , H01L21/266
摘要： A method of sealing a first wafer and a second wafer each made of semiconducting materials, including: implanting a metallic species in at least the first wafer, assembling the first wafer and the second wafer by molecular bonding, and after the molecular bonding, forming a metallic ohmic contact including alloys formed between the implanted metallic species and the semiconducting materials of the first wafer and the second wafer, the metallic ohmic contact being formed at an assembly interface between the first wafer and the second wafer, wherein the forming includes causing the implanted metallic species to diffuse towards the interface between the first wafer with the second wafer and beyond the interface.
摘要翻译：一种密封由半导体材料制成的第一晶片和第二晶片的方法，包括：在至少第一晶片中注入金属物质，通过分子键合装配第一晶片和第二晶片，并在分子键合之后形成金属欧姆接触，包括在注入的金属物质和第一晶片和第二晶片的半导体材料之间形成的合金，金属欧姆接触形成在第一晶片和第二晶片之间的组装界面处，其中形成包括使植入金属物质朝向第一晶片与第二晶片之间的界面扩散并超出界面。

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