专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110092051A1 PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP 有权
标题翻译：包含包含创建步骤的薄膜转移过程
公开(公告)号：US20110092051A1
公开(公告)日：2011-04-21
申请号：US12977757
申请日：2010-12-23
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/302 , H01L21/306 , H01L21/31
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

2. 发明申请

US20070232025A1 PROCESS FOR THE TRANSFER OF A THIN FILM 有权
标题翻译：转印薄膜的方法
公开(公告)号：US20070232025A1
公开(公告)日：2007-10-04
申请号：US11747733
申请日：2007-05-11
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

3. 发明授权

US06809044B1 Method for making a thin film using pressurization 有权
标题翻译：使用加压制造薄膜的方法
公开(公告)号：US06809044B1
公开(公告)日：2004-10-26
申请号：US10018757
申请日：2002-03-20
申请人： Bernard Aspar , Michel Bruel , Hubert Moriceau
发明人： Bernard Aspar , Michel Bruel , Hubert Moriceau
IPC分类号： H01L21425
CPC分类号： H01L21/76251 , H01L21/2007 , Y10S438/977
摘要： The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising: the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corresponding to the thickness of the required thin film, the gaseous compounds being implanted under conditions that could weaken the substrate at the layer of micro-cavities, partial or total separation of the thin film from the rest of the substrate (1), this separation comprising a step in which thermal energy is added and pressure is applied to the said plane face (2).
摘要翻译：本发明涉及从具有平面（2）的固体材料的基材（1）开始制造薄膜的方法，该方法包括：将气态化合物注入基材（1）中以形成一个微孔（4）在与所述薄膜的厚度对应的所述平面（2）的深度处，气态化合物在可能削弱微腔层的基底的条件下被注入，部分或全部分离从基板（1）的其余部分的薄膜，该分离包括添加热能并将压力施加到所述平面（2）的步骤。

4. 发明授权

US06808967B1 Method for producing a buried layer of material in another material 失效
标题翻译：用于在另一种材料中制造掩埋层材料的方法
公开(公告)号：US06808967B1
公开(公告)日：2004-10-26
申请号：US09806511
申请日：2001-04-16
申请人： Bernard Aspar , Michel Bruel , Hubert Moriceau
发明人： Bernard Aspar , Michel Bruel , Hubert Moriceau
IPC分类号： H01L2100
CPC分类号： H01L21/26533 , H01L21/76245
摘要： The aim of the invention is a method for producing a layer (2) of a first material embedded in a substrate (1) comprising at least one second material. The method comprises the following stages: formation in the substrate (1), at the level of the desired embedded layer, of a layer of microcavities intended to serve as centers of nucleation to produce said first material in said second material, formation of precipitate embryos from the nucleation centers formed, the precipitate embryos corresponding to the first material, growth of the precipitates from the embryos through species concentration corresponding to the first material and carried to the microcavity layer.
摘要翻译：本发明的目的是一种用于生产包含至少一种第二材料的衬底（1）中的第一材料的层（2）的方法。该方法包括以下步骤：在所需嵌入层的基底（1）的水平上形成旨在用作成核中心以在所述第二材料中产生所述第一材料的微腔层，形成沉淀胚胎从成核中心形成，沉淀胚胎对应于第一种材料，从胚胎生长沉淀物质浓度对应于第一种物质并运送到微腔层。

5. 发明授权

US07229899B2 Process for the transfer of a thin film 有权
标题翻译：薄膜转印工艺
公开(公告)号：US07229899B2
公开(公告)日：2007-06-12
申请号：US10667707
申请日：2003-09-22
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

6. 发明授权

US07883994B2 Process for the transfer of a thin film 有权
标题翻译：薄膜转印工艺
公开(公告)号：US07883994B2
公开(公告)日：2011-02-08
申请号：US11747733
申请日：2007-05-11
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/265
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

7. 发明授权

US06756286B1 Method for transferring a thin film comprising a step of generating inclusions 有权
标题翻译：用于转印薄膜的方法，包括产生夹杂物的步骤
公开(公告)号：US06756286B1
公开(公告)日：2004-06-29
申请号：US09380322
申请日：1999-11-22
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21265
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions are designed to form traps for gaseous compounds which subsequently are implanted. In a subsequent step gaseous compounds are implanted in a manner to convey the gaseous compounds into the layer of inclusions. The dose of implanted gaseous compounds is made sufficient to cause the formation of micro-cavities to form a fracture plane along which the thin film can be separated from the remainder of the substrate.
摘要翻译：用于转移在初始底物中限定的至少一种固体材料薄膜的方法。该方法包括一个步骤，其中在初始衬底中形成一层夹杂物，其深度对应于薄膜的所需厚度。这些夹杂物被设计成形成随后被植入的气态化合物的阱。在随后的步骤中，以将气态化合物输送到夹杂层中的方式注入气态化合物。植入的气态化合物的剂量足以引起微孔的形成以形成断裂平面，沿着该断裂面，薄膜可以与基底的其余部分分离。

8. 发明授权

US08470712B2 Process for the transfer of a thin film comprising an inclusion creation step 有权
标题翻译：用于转移包含包含物形成步骤的薄膜的方法
公开(公告)号：US08470712B2
公开(公告)日：2013-06-25
申请号：US12977757
申请日：2010-12-23
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/302 , H01L21/30
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个注入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

9. 发明申请

US20090095399A1 METHOD FOR TRIMMING A STRUCTURE OBTAINED BY THE ASSEMBLY OF TWO PLATES 有权
标题翻译：用于调整由两板组装获得的结构的方法
公开(公告)号：US20090095399A1
公开(公告)日：2009-04-16
申请号：US11722115
申请日：2005-12-22
申请人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
发明人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
IPC分类号： B32B37/02
CPC分类号： H01L21/02008 , H01L21/76251 , H01L21/76254 , Y10T156/10
摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.
摘要翻译：一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一晶片，其中修整涉及第一晶片。该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

10. 发明授权

US07258743B2 Composite structure with a uniform crystal orientation and the method of controlling the crystal orientation of one such structure 有权
标题翻译：具有均匀晶体取向的复合结构和控制这种结构的晶体取向的方法
公开(公告)号：US07258743B2
公开(公告)日：2007-08-21
申请号：US10362278
申请日：2002-06-20
申请人： Franck Fournel , Bernard Aspar , Hubert Moriceau
发明人： Franck Fournel , Bernard Aspar , Hubert Moriceau
IPC分类号： C30B33/00
CPC分类号： C30B33/06 , C30B33/00 , H01L23/544 , H01L2223/54453 , H01L2223/54493 , H01L2924/0002 , Y10S117/902 , Y10T428/24421 , Y10T428/31645 , H01L2924/00
摘要： This invention relates to a process for controlling the orientation of secondary structures (A1, A2) with at least a crystalline part during the transfer of secondary structures from a primary structure (A) on which the secondary structures have an initial crystalline orientation identical to the orientation of the primary structure, onto at least one support structure (B), the process comprising: a) the formation of at least one orientation mark (Va, Va1, Va2) when the secondary structures are fixed to the primary structure (A), the mark having an arbitrary orientation with respect to the said initial crystalline orientation, but identical for each secondary structure, and b) when a set of secondary structures is transferred onto at least one support structure (B), an arrangement of the secondary structures so that their orientation marks can be oriented in a controlled manner.
摘要翻译：本发明涉及一种用于控制二次结构（A 1，A 2）在二次结构从第一结构（A）转移过程中至少具有结晶部分的方向的方法，其中二级结构具有初始结晶取向相同至少一个支撑结构（B）的方向，所述方法包括：a）当所述二级结构固定到所述主要结构时，形成至少一个取向标记（Va，Va 1，Va 2）结构（A），所述标记相对于所述初始结晶取向具有任意取向，但对于每个二级结构是相同的，以及b）当一组二级结构转移到至少一个支撑结构（B）上时，的二次结构，使得它们的取向标记可以以受控的方式取向。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式