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1. 发明申请

US20080296712A1 Assembling Two Substrates by Molecular Adhesion 有权
标题翻译：通过分子粘附装配两个底物
公开(公告)号：US20080296712A1
公开(公告)日：2008-12-04
申请号：US11630283
申请日：2005-06-29
申请人： Guy Feuillet , Hubert Moriceau , Stephane Pocas , Eric Jalaguier , Moussy Norbert
发明人： Guy Feuillet , Hubert Moriceau , Stephane Pocas , Eric Jalaguier , Moussy Norbert
IPC分类号： H01L21/50 , H01L33/00
CPC分类号： H01L27/14636 , H01L24/83 , H01L27/14634 , H01L33/0079 , H01L2224/83801 , H01L2224/83894 , H01L2924/01079 , H01L2924/01087 , H01L2924/07811 , Y10T29/49126 , H01L2924/3512 , H01L2924/00
摘要： The invention relates to an assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, said faces being located facing each other, at least one of the substrates having a surface topography, characterised in that the method comprises steps consisting of: forming an intermediate layer comprising at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of said faces of substrates to each other from a topographic point of view, the resistivity and/or thickness of the intermediate layer being chosen to enable said local electrical bonds, bringing the two faces into contact, the substrates being positioned so as to create electrical bonds between areas located on the first substrate and the corresponding areas located on the second substrate, bonding the faces of the first and second substrates by molecular bonding.
摘要翻译：本发明涉及一种组装方法，其能够在位于第一基板的表面上的区域和位于第二基板的表面上的相应区域之间进行局部电接合，所述面彼此面对，所述基板中的至少一个具有表面形貌，其特征在于该方法包括以下步骤：形成中间层，该中间层包含在基底表面上的至少一个埋藏层或具有表面形貌的基底，以使其（它们）与基底的分子结合相容从地形角度来看，中间层的电阻率和/或厚度被选择为使得能够实现所述局部电接合，使两个面接触，基板被定位成在位于所述第一基板和位于所述第二基板上的对应区域接合所述第一和第二基板的所述表面通过分子键合。

2. 发明授权

US08852997B2 Method for removing residual extrinsic impurities in an N type ZnO or ZnMgO substrate, for P-type doping of this substrate 有权
标题翻译：用于去除N型ZnO或ZnMgO衬底中的残余外在杂质的方法，用于对该衬底进行P型掺杂
公开(公告)号：US08852997B2
公开(公告)日：2014-10-07
申请号：US13701621
申请日：2011-06-01
申请人： Isabelle Bisotto , Guy Feuillet
发明人： Isabelle Bisotto , Guy Feuillet
IPC分类号： H01L21/00 , H01L21/322 , H01L21/46 , H01L21/477 , H01L21/425 , H01L33/00
CPC分类号： H01L21/46 , H01L21/425 , H01L21/477 , H01L33/0083
摘要： A method for purifying an n-type ZnO and/or ZnMgO substrate to reduce or eliminate the residual extrinsic impurities including introducing a reactive species having strong chemical affinity for at least one of the residual extrinsic impurities, and/or being capable of creating crystalline defects, is introduced in at least one region of the substrate, the reactive species being P, and whereby at least one getter region capable of trapping the said residual extrinsic impurities and/or in which the residual extrinsic impurities are trapped is created in the substrate; then annealing the substrate to cause diffusion of the residual extrinsic impurities towards the getter region and/or to outside the getter region. A method for preparing a p-doped ZnO and/or ZnMgO substrate comprising purifying an n-type ZnO and/or ZnMgO substrate using the above purification method in which one or more reactive species are used not limited to phosphorus alone.
摘要翻译：一种用于净化n型ZnO和/或ZnMgO衬底以减少或消除残留的外在杂质的方法，包括对至少一种残留的外在杂质引入具有强化学亲和力的反应物种和/或能够产生结晶缺陷被引入到所述基材的至少一个区域中，所述反应性物质是P，并且由此在所述基材中产生能够俘获所述残留的外在杂质和/或其中残留的外在杂质的至少一个吸气剂区域; 然后使衬底退火以使残留的外来杂质向吸气剂区域和/或吸气剂区域外扩散。一种制备p掺杂的ZnO和/或ZnMgO衬底的方法，包括使用上述纯化方法纯化n型ZnO和/或ZnMgO衬底，其中使用一种或多种反应性物质不限于单独的磷。

3. 发明授权

US5349596A Asymmetrical semiconductor heterostructure laser cavity and laser equipped with said cavity 失效
标题翻译：不对称半导体异质结激光腔和激光器配有所述腔
公开(公告)号：US5349596A
公开(公告)日：1994-09-20
申请号：US46744
申请日：1993-04-16
申请人： Engin Molva , Roger Accomo , Guy Feuillet , Joel Cibert , Dang Le Si , Claire Bodin-Deshayes
发明人： Engin Molva , Roger Accomo , Guy Feuillet , Joel Cibert , Dang Le Si , Claire Bodin-Deshayes
IPC分类号： H01S5/00 , H01S3/0959 , H01S5/02 , H01S5/024 , H01S5/04 , H01S5/042 , H01S5/32 , H01S5/34 , H01S5/343 , H01S5/347 , H01S3/18 , H01L21/203
CPC分类号： B82Y20/00 , H01S5/02 , H01S5/04 , H01S5/34 , H01S3/0959 , H01S5/02272 , H01S5/024 , H01S5/02461 , H01S5/041 , H01S5/3213 , H01S5/3409 , H01S5/3426 , H01S5/343 , H01S5/3432 , H01S5/347
摘要： A semiconductor heterostructure laser cavity is disclosed which has semiconductor layers epitaxied to define four zones on a substrate. The laser cavity includes a first zone with a composition that varies continuously from a first face to a second face with a gap decreasing from the first face to the second face, the first zone ensuring an optical confinement and light guidance. A second zone constitutes an active emission zone in contact with the second face of the first zone and having at least one quantum well with a gap smaller than that of the first zone. A third zone has a gap larger than that of the at least one quantum well. The third zone ensuring an optical confinement and a light guidance, and having a composition which varies continuously from a first face to a second face with a gap which increases from the first face to the second face, the first face of the third zone being in contact with the active emission zone. A fourth zone constitutes a buffer zone which contacts the second face of the third zone and a substrate, the fourth zone serving as an optical barrier for light guiding, the first and third zones being asymmetrical with respect to the active emission zone to define an asymmetrical GRINSCH structure, one of the first and third zones constituting a surface of the semiconductor heterostructure for ensuring electron excitation and creation of electron-holes.
摘要翻译：公开了一种半导体异质结构激光腔，其具有在衬底上限定四个区的外延半导体层。激光腔包括第一区，其具有从第一面到第二面连续变化的组合，其间隙从第一面向第二面逐渐减小，第一区确保光学限制和光引导。第二区域构成与第一区域的第二面接触的有源发射区，并且具有至少一个具有小于第一区的间隙的量子阱。第三区域的间隙大于至少一个量子阱的间隙。第三区域确保光学限制和光引导，并且具有从第一面到第二面连续变化的组合，其间隙从第一面增加到第二面，第三区的第一面处于与活性排放区接触。第四区域构成接触第三区域的第二面的缓冲区和基板，第四区域用作光导光学屏障，第一和第三区域相对于有源发射区域是不对称的，以限定不对称的 GRINSCH结构，构成用于确保电子激发和形成电子空穴的半导体异质结构的表面的第一和第三区域之一。

4. 发明申请

US20130137214A1 METHOD FOR REMOVING RESIDUAL EXTRINSIC IMPURITIES IN AN N TYPE ZnO OR ZnMgO SUBSTRATE, FOR P-TYPE DOPING OF THIS SUBSTRATE 有权
标题翻译：用于移除N型ZnO或ZnMgO衬底中的残留极限污染物的方法，用于该衬底的P型掺杂
公开(公告)号：US20130137214A1
公开(公告)日：2013-05-30
申请号：US13701621
申请日：2011-06-01
申请人： Isabelle Bisotto , Guy Feuillet
发明人： Isabelle Bisotto , Guy Feuillet
IPC分类号： H01L21/46
CPC分类号： H01L21/46 , H01L21/425 , H01L21/477 , H01L33/0083
摘要： A method for purifying an n-type ZnO and/or ZnMgO substrate to reduce or eliminate the residual extrinsic impurities of the substrate with a view to p-doping of at least are part of the substrate, wherein a reactive species having strong chemical affinity for at least one of the residual extrinsic impurities, and/or being capable of creating crystalline defects, is introduced in at least one region of the substrate, the said reactive species being P, and whereby at least one region called a getter region capable of trapping the said residual extrinsic impurities and/or in which the residual extrinsic impurities are trapped is created in the substrate; annealing of the substrate is then carried out to cause diffusion of the residual extrinsic impurities towards the getter region and/or to outside the getter region, preferably towards at least one surface of the substrate.A method for preparing a p-doped ZnO and/or ZnMgO substrate comprising at least one step to purify an n-type ZnO and/or ZnMgO substrate using the above purification method in which one or more reactive species are used not limited to phosphorus alone.
摘要翻译：用于净化n型ZnO和/或ZnMgO衬底以减少或消除衬底的残余外在杂质的方法至少是衬底的一部分，其中对于衬底的一部分具有强的化学亲和力的反应性物质残留的外在杂质中的至少一种和/或能够产生结晶缺陷的物质被引入到基底的至少一个区域中，所述反应物种为P，由此至少一个称为吸气剂区域的区域能捕获所述残留的外在杂质和/或其中残留的外在杂质被捕获在所述基板中; 然后进行衬底的退火，以使剩余的外在杂质向吸气剂区域和/或吸气剂区域的外部优选地朝向衬底的至少一个表面扩散。一种用于制备p掺杂的ZnO和/或ZnMgO衬底的方法，包括至少一个步骤，以使用上述纯化方法纯化n型ZnO和/或ZnMgO衬底，其中使用一种或多种反应性物质不限于单独的磷。

5. 发明授权

US07906362B2 Assembling two substrates by molecular adhesion 有权
标题翻译：通过分子粘附装配两个底物
公开(公告)号：US07906362B2
公开(公告)日：2011-03-15
申请号：US11630283
申请日：2005-06-29
申请人： Guy Feuillet , Hubert Moriceau , Stephane Pocas , Eric Jalaguier , Norbert Moussy
发明人： Guy Feuillet , Hubert Moriceau , Stephane Pocas , Eric Jalaguier , Norbert Moussy
IPC分类号： H01L21/00 , H01L21/30 , H01L21/46 , H01L21/31 , H01L21/469
CPC分类号： H01L27/14636 , H01L24/83 , H01L27/14634 , H01L33/0079 , H01L2224/83801 , H01L2224/83894 , H01L2924/01079 , H01L2924/01087 , H01L2924/07811 , Y10T29/49126 , H01L2924/3512 , H01L2924/00
摘要： An assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, the faces being located facing each other, at least one of the substrates having a surface topography. The method forms an intermediate layer including at least one burial layer on the face of the substrate or substrates having a surface topography to make it (them) compatible with molecular bonding of the faces of substrates to each other from a topographic point of view, resistivity and/or thickness of the intermediate layer being chosen to enable the local electrical bonds, brings the two faces into contact, the substrates positioned to create electrical bonds between areas on the first substrate and corresponding areas on the second substrate, and bonds the faces by molecular bonding.
摘要翻译：一种组装方法，用于实现位于第一基板的表面上的区域和位于第二基板的表面上的对应区域之间的局部电粘合，所述表面彼此面对，所述基板中的至少一个具有表面形貌。该方法形成中间层，其包括在基底的表面上的至少一个埋置层或具有表面形貌的基底，以使其（它们）与基底的表面的分子结合相互匹配，从地形的角度来看，电阻率和/或中间层的厚度被选择以实现局部电接合，使两个面接触，所述基板被定位成在第一基板上的区域和第二基板上的对应区域之间产生电粘合，并且通过分子键合。

6. 发明申请

US20090311528A1 METHOD FOR PASIVATING NON-RADIATIVE RECOMBINATION CENTRES OF ZnO SPECIMENS AND PASSIVE ZnO SPECIMENS THUS PREPARED 审中-公开
标题翻译：用于吸收ZnO样品和被制备的被动ZnO样品的非放射性重组中心的方法
公开(公告)号：US20090311528A1
公开(公告)日：2009-12-17
申请号：US12480423
申请日：2009-06-08
申请人： Ivan-Christophe Robin , Guy Feuillet
发明人： Ivan-Christophe Robin , Guy Feuillet
IPC分类号： B05D5/12 , B32B9/00 , B32B1/08
CPC分类号： H01L33/0083 , B82Y30/00 , B82Y40/00 , H01L21/385 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/22 , H01L33/18 , H01L33/20 , H01L33/24 , H01S3/169 , Y10T428/2958
摘要： Method for passivating non-radiatives recombination centres of a ZnO specimen in which magnesium is deposited on at least one surface of the ZnO specimen, and annealing of the specimen on which magnesium is deposited is performed in an oxidizing atmosphere.ZnO specimen thus obtained.
摘要翻译：在ZnO样品的至少一个表面上沉积ZnO样品的非辐射复合中心的钝化方法，并且在氧化气氛中进行沉积镁的样品的退火。由此获得ZnO样品。

7. 发明申请

US20080041517A1 Assembling Two Substrates by Molecular Adhesion, One of the Two Supporting an Electrically Conductive Film 审中-公开
标题翻译：通过分子粘附组装两个底物，两个支持导电膜之一
公开(公告)号：US20080041517A1
公开(公告)日：2008-02-21
申请号：US11630033
申请日：2005-06-29
申请人： Hubert Moriceau , Guy Feuillet , Stephane Pocas
发明人： Hubert Moriceau , Guy Feuillet , Stephane Pocas
IPC分类号： B29C65/02 , B29C65/14
CPC分类号： H01L24/29 , H01L24/32 , H01L24/83 , H01L27/14634 , H01L27/1469 , H01L2224/04026 , H01L2224/05009 , H01L2224/29082 , H01L2224/29117 , H01L2224/29138 , H01L2224/29155 , H01L2224/29164 , H01L2224/83193 , H01L2224/83801 , H01L2224/8381 , H01L2224/8383 , H01L2224/83894 , H01L2224/9202 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01057 , H01L2924/01058 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10329 , Y10T156/10 , H01L2924/01014 , H01L2924/01028 , H01L2924/01049 , H01L2924/01031 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： A process assembling first and second substrates on contact faces by molecular bonding. The first substrate contact face has an electrically conducting layer on at least part of its surface. The process deposits a bond layer on at least part of the electrically conducting layer, which bond layer can molecularly bond with a zone of the second substrate contact face and be combined with the electrically conducting layer to form a conducting alloy, contacts the bond layer with the zone of the second substrate contact face and molecularly bond them, and transforms over all or part of its thickness of all or part of the electrically conducting layer with all or part of the bond layer and with at least part of the thickness of the zone of the contact face on all or part of the surface of the second substrate to form a conducting alloy(s) zone.
摘要翻译：通过分子结合在接触面上组装第一和第二基板的工艺。第一基板接触面在其表面的至少一部分上具有导电层。该工艺在导电层的至少一部分上沉积接合层，该接合层可以与第二基板接触面的区域分子结合并与导电层组合以形成导电合金，第二基板接触面的区域并将其分子结合，并且将全部或部分导电层的全部或部分厚度与全部或部分接合层以及至少部分厚度的区域的接触面在第二基底的全部或部分表面上以形成导电合金区。

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