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    • 44. 发明申请
    • Nitride-based semiconductor light emitting diode
    • 氮化物半导体发光二极管
    • US20070096115A1
    • 2007-05-03
    • US11581757
    • 2006-10-17
    • Hyuk LeeIn PyeonHyun-Ju ParkHyun KimDong KimHyoun Shin
    • Hyuk LeeIn PyeonHyun-Ju ParkHyun KimDong KimHyoun Shin
    • H01L33/00H01L31/12H01L27/15H01L29/26
    • H01L33/38H01L33/20H01L33/32
    • A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.
    • 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的电流扩散层; 形成在电流扩散层上的p电极,p电极具有两个p型分支电极; 以及形成在其上未形成有源层的n型氮化物半导体层上的n电极,n电极具有一个n型分支电极。 n型分支电极被形成为插入在两个p型分支电极之间,并且从与n电极相邻的透明电极的最外侧到p电极的距离在任何位置是相同的 。