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41. 发明申请

US20050101105A1 Methods for fabricating final substrates 有权
标题翻译：制造最终基板的方法
公开(公告)号：US20050101105A1
公开(公告)日：2005-05-12
申请号：US11009138
申请日：2004-12-13
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L27/148 , H01L21/30 , H01L21/46 , H01L29/768
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。该方法包括在源极衬底的表面下方形成弱化区以限定转移层; 沿着弱化区域将转移层从源底物分离; 在转移层上沉积有用的层; 以及在有用层上沉积支撑材料以形成最终的基底。在从源极衬底分离转移层之前或之后，有用层可以沉积在转移层上。有用层通常由具有大带隙的材料制成，并且包括氮化镓或氮化铝中的至少一种，或包括至少两种元素的化合物，包括至少一种铝，铟和镓元素。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

42. 发明申请

US20050006740A1 Substrate assembly for stressed systems 有权
标题翻译：用于应力系统的基板组件
公开(公告)号：US20050006740A1
公开(公告)日：2005-01-13
申请号：US10755006
申请日：2004-01-08
申请人： Fabrice Letertre , Bruno Ghyselen , Oliver Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Oliver Rayssac
IPC分类号： H01L21/20 , H01L21/762 , H01L21/44 , H01L21/50 , H01L23/02 , H01L23/52 , H01L29/40
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A substrate-assembly having a mechanical stress absorption system. The assembly includes two substrates, one of which has a mechanical stress absorbing system, such as a plurality of motifs that absorb thermoelastic stresses, to prevent cracking or destruction of the substrates or separation of one substrate from the other.
摘要翻译：具有机械应力吸收系统的基板组件。该组件包括两个基板，其中一个具有机械应力吸收系统，例如吸收热弹性应力的多个图案，以防止基板的破裂或破坏或将一个基板与另一个基板分开。

43. 发明授权

US08252664B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US08252664B2
公开(公告)日：2012-08-28
申请号：US13246316
申请日：2011-09-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

44. 发明授权

US07741678B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07741678B2
公开(公告)日：2010-06-22
申请号：US12139599
申请日：2008-06-16
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/01 , H01L21/44
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

45. 发明授权

US07601611B2 Method of fabricating a semiconductor hetero-structure 有权
标题翻译：制造半导体异质结构的方法
公开(公告)号：US07601611B2
公开(公告)日：2009-10-13
申请号：US11147575
申请日：2005-06-07
申请人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
发明人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method of fabricating a structure that includes at least one semiconductor material for applications in microelectronics, optoelectronics or optics. The method includes transferring, onto a support made of a first material, a thin monocrystalline layer made of a second material that differs from the first material, and performing a predetermined heat treatment carrying out at least one strengthening step on a bonding interface between the thin layer and the support. The thickness of the thin layer is selected as a function of the difference between the coefficients of thermal expansion of the first and second materials and as a function of parameters of predetermined heat treatment, such that the stresses exerted by the heat treatment on the assembly of the support and the transferred thin layer leaves the assembly intact. The method further includes depositing an additional thickness of the second material in the monocrystalline state on the thin layer to thicken it. The method is useful for fabrication of hetero-substrates with a relatively thick useful layer.
摘要翻译：一种制造包括用于微电子学，光电子学或光学学中的至少一种半导体材料的结构的方法。该方法包括将由第一材料制成的支撑体转移到与第一材料不同的第二材料制成的薄单晶层上，并且进行至少一个加强步骤的预定热处理，该加强步骤在薄的层和支持。选择薄层的厚度作为第一和第二材料的热膨胀系数之间的差异的函数，并且作为预定热处理的参数的函数，使得通过热处理施加在组件上的应力支撑和转移的薄层离开组件完好无损。该方法还包括在薄层上沉积单晶状态的第二材料的附加厚度以使其变稠。该方法可用于制造具有相对厚的有用层的异质衬底。

46. 发明申请

US20080248251A1 SEMICONDUCTOR SUBSTRATES HAVING USEFUL AND TRANSFER LAYERS 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US20080248251A1
公开(公告)日：2008-10-09
申请号：US12139599
申请日：2008-06-16
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： B32B3/00
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

47. 发明授权

US07405135B2 Substrate for stressed systems and method of making same 失效
标题翻译：强化系统基板及其制作方法
公开(公告)号：US07405135B2
公开(公告)日：2008-07-29
申请号：US11434930
申请日：2006-05-17
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L29/00
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.
摘要翻译：一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

48. 发明授权

US07378729B2 Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom 有权
标题翻译：在从其分离薄层之后回收包含缓冲层的晶片
公开(公告)号：US07378729B2
公开(公告)日：2008-05-27
申请号：US11285008
申请日：2005-11-23
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Le Vaillant , Takeshi Akatsu
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Le Vaillant , Takeshi Akatsu
IPC分类号： H01L23/12
CPC分类号： H01L21/02032
摘要： A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.
摘要翻译：由在分离至少一个有用层之后再循环晶片的方法产生的施主晶片。施主晶片包括基板; 衬底上的缓冲结构; 与缓冲结构相关联的保护层; 以及位于缓冲结构上方的后分离层，并且在其表面上呈现突起或粗糙部分。当去除后剥离层时，保护层防止整个缓冲结构的移除。

49. 发明授权

US07375008B2 Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof 有权
标题翻译：通过机械方式回收利用包括多层结构在内的薄片的薄片
公开(公告)号：US07375008B2
公开(公告)日：2008-05-20
申请号：US11075272
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a method of re-forming a useful layer on a donor wafer after taking off a useful layer formed of a material chosen from among semiconductor materials. The donor wafer includes in succession a substrate and a taking-off structure, the taking-off structure includes the taken-off useful layer before taking-off. The method includes a removal of material involving a portion of the donor wafer on the side where the useful layer has been taken off. The material is removed by mechanical means so as to preserve a portion of the taking-off structure to form at least one other useful layer which can be taken off after re-forming, without adding additional material to the wafer.
摘要翻译：本发明涉及一种在从由半导体材料中选出的材料形成的有用层之后，在施主晶片上重新形成有用层的方法。施主晶片连续地包括基板和起飞结构，起飞结构包括起飞前的起飞有用层。该方法包括去除涉及在有用层被取下的一侧的施主晶片的一部分的材料。通过机械方法去除材料，以便保留一部分起飞结构以形成至少一个其它可用的层，其可以在重新形成之后取下，而不向晶片添加额外的材料。

50. 发明授权

US07338883B2 Process for transferring a layer of strained semiconductor material 有权
标题翻译：用于转移应变半导体材料层的工艺
公开(公告)号：US07338883B2
公开(公告)日：2008-03-04
申请号：US11165339
申请日：2005-06-24
申请人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
发明人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
IPC分类号： H01L21/46 , H01L21/30
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： The invention relates to a process for producing an electronic structure that includes a thin layer of strained semiconductor material from a donor wafer. The donor wafer has a lattice parameter matching layer that includes an upper layer of a semiconductor material having a first lattice parameter and a film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter and that is strained by the matching layer. This process includes transfer of the film to a receiving substrate. The invention also relates to the semiconductor structures that can be produced by the process.
摘要翻译：本发明涉及一种用于制造电子结构的方法，该电子结构包括来自施主晶片的应变半导体材料的薄层。施主晶片具有晶格参数匹配层，其包括具有第一晶格参数的半导体材料的上层和具有与第一晶格参数基本不同的第二标称晶格参数的半导体材料的膜，并且其被应变由匹配层。该方法包括将膜转移到接收衬底。本发明还涉及可以通过该方法生产的半导体结构。

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