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1. 发明授权

US07009270B2 Substrate for stressed systems and method of making same 失效
标题翻译：强化系统基板及其制作方法
公开(公告)号：US07009270B2
公开(公告)日：2006-03-07
申请号：US10755007
申请日：2004-01-08
申请人： Fabrice Letertre , Bruno Ghyselen , Oliver Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Oliver Rayssac
IPC分类号： H01L29/00
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.
摘要翻译：一种应力吸收微结构组件，包括具有在表面上雕刻或蚀刻的多个图案的容纳层的支撑衬底，缓冲层和成核层。应力吸收微结构组件还可以包括缓冲层和成核层之间的绝缘层。该组件可以在其上接收厚的外延层，同时引起这种层的破裂。

2. 发明申请

US20050006740A1 Substrate assembly for stressed systems 有权
标题翻译：用于应力系统的基板组件
公开(公告)号：US20050006740A1
公开(公告)日：2005-01-13
申请号：US10755006
申请日：2004-01-08
申请人： Fabrice Letertre , Bruno Ghyselen , Oliver Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Oliver Rayssac
IPC分类号： H01L21/20 , H01L21/762 , H01L21/44 , H01L21/50 , H01L23/02 , H01L23/52 , H01L29/40
CPC分类号： H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A substrate-assembly having a mechanical stress absorption system. The assembly includes two substrates, one of which has a mechanical stress absorbing system, such as a plurality of motifs that absorb thermoelastic stresses, to prevent cracking or destruction of the substrates or separation of one substrate from the other.
摘要翻译：具有机械应力吸收系统的基板组件。该组件包括两个基板，其中一个具有机械应力吸收系统，例如吸收热弹性应力的多个图案，以防止基板的破裂或破坏或将一个基板与另一个基板分开。

3. 发明授权

US07646038B2 Method of fabricating heteroepitaxial microstructures 有权
标题翻译：制造异质外延微结构的方法
公开(公告)号：US07646038B2
公开(公告)日：2010-01-12
申请号：US11852562
申请日：2007-09-10
申请人： Bruce Faure , Fabrice Letertre , Bruno Ghyselen
发明人： Bruce Faure , Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： C30B25/183 , C30B33/00 , H01L21/76254
摘要： An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.
摘要翻译：制造具有光滑表面的高品质异质外延微结构的有效方法。该方法包括从基底结构分离层以提供具有分离表面的载体基底，然后通过在载体基底的分离表面上沉积外延层而在载体基底的分离表面上形成异质外延微结构。还包括由这种方法制造的异质外延微结构。

4. 发明授权

US07465991B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07465991B2
公开(公告)日：2008-12-16
申请号：US11402047
申请日：2006-04-12
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/01
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

5. 发明授权

US06974760B2 Methods for transferring a useful layer of silicon carbide to a receiving substrate 有权
标题翻译：将有用的碳化硅层转移到接收衬底的方法
公开(公告)号：US06974760B2
公开(公告)日：2005-12-13
申请号：US10893192
申请日：2004-07-15
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/265 , H01L21/02 , H01L21/18 , H01L21/20 , H01L21/266 , H01L21/76 , H01L21/762 , H01L27/12 , H01L21/30
CPC分类号： H01L21/02032 , H01L21/187 , H01L21/2007 , H01L21/26586 , H01L21/266 , H01L21/7602 , H01L21/76254
摘要： Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the technique includes implanting at least H+ ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D chosen to form an optimal weakened zone near a mean implantation depth, the optimal weakened zone defining the useful layer and a remainder portion of the source substrate. The method also includes bonding the front face of the source substrate to a contact face of the receiving substrate, and detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment. Such a method facilitates recycling the remainder portion of the source substrate.
摘要翻译：描述了将有用的碳化硅层转移到接收衬底的方法。在一个实施例中，该技术包括将至少H + +离子注入到碳化硅源极基底的前面，其注入能量E大于或等于95keV，并且将植入剂量D选择为在平均植入深度附近形成最佳弱化区，最佳弱化区限定有用层和源极衬底的剩余部分。该方法还包括将源极基板的正面接合到接收基板的接触面，并且沿着弱化区域将有用层与源极基板的剩余部分分离，同时最小化或避免形成碳化硅材料的过剩区域在有用层的外围，在分离期间未被转移到接收基板。这种方法有助于再循环源极衬底的剩余部分。

6. 发明申请

US20050101105A1 Methods for fabricating final substrates 有权
标题翻译：制造最终基板的方法
公开(公告)号：US20050101105A1
公开(公告)日：2005-05-12
申请号：US11009138
申请日：2004-12-13
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/12 , H01L21/02 , H01L21/762 , H01L29/165 , H01L29/20 , H01L29/24 , H01L29/267 , H01L27/148 , H01L21/30 , H01L21/46 , H01L29/768
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. The method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer; detaching the transfer layer from the source substrate along the zone of weakness; depositing a useful layer upon the transfer layer; and depositing a support material on the useful layer to form the final substrate. The useful layer may be deposited on the transfer layer before or after detaching the transfer layer from the source substrate. The useful layer is typically made of a material having a large band gap, and comprises at least one of gallium nitride, or aluminum nitride, or of compounds of at least two elements including at least one element of aluminum, indium, and gallium. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
摘要翻译：描述了用于制造用于光学，电子学或光电子学的最终衬底的方法。该方法包括在源极衬底的表面下方形成弱化区以限定转移层; 沿着弱化区域将转移层从源底物分离; 在转移层上沉积有用的层; 以及在有用层上沉积支撑材料以形成最终的基底。在从源极衬底分离转移层之前或之后，有用层可以沉积在转移层上。有用层通常由具有大带隙的材料制成，并且包括氮化镓或氮化铝中的至少一种，或包括至少两种元素的化合物，包括至少一种铝，铟和镓元素。可以通过将原子物质注入到源底物中来有利地形成弱点区域。

7. 发明授权

US08252664B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US08252664B2
公开(公告)日：2012-08-28
申请号：US13246316
申请日：2011-09-27
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac , Pierre Rayssac, legal representative , Gisèle Rayssac, legal representative
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/46
CPC分类号： H01L21/187 , H01L21/76254
摘要： The invention relates to methods for fabricating a semiconductor substrate. In one embodiment, the method includes providing an support that includes a barrier layer thereon for preventing loss by diffusion of elements derived from dissociation of the support at epitaxial growth temperatures; providing a seed layer on the barrier layer, wherein the seed layer facilitates epitaxial growth of a single crystal III-nitride semiconductor layer thereon; epitaxially growing a nitride working layer on the thin seed layer; and removing the support to form the substrate.
摘要翻译：本发明涉及制造半导体衬底的方法。在一个实施方案中，该方法包括提供在其上包括阻挡层的载体，用于防止在外延生长温度下衍生自载体解离的元素的扩散而损失; 在所述阻挡层上提供种子层，其中所述种子层有助于其上的单晶III族氮化物半导体层的外延生长; 在薄种子层上外延生长氮化物工作层; 并移除支撑物以形成基底。

8. 发明授权

US07741678B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07741678B2
公开(公告)日：2010-06-22
申请号：US12139599
申请日：2008-06-16
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/01 , H01L21/44
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

9. 发明授权

US07601611B2 Method of fabricating a semiconductor hetero-structure 有权
标题翻译：制造半导体异质结构的方法
公开(公告)号：US07601611B2
公开(公告)日：2009-10-13
申请号：US11147575
申请日：2005-06-07
申请人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
发明人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method of fabricating a structure that includes at least one semiconductor material for applications in microelectronics, optoelectronics or optics. The method includes transferring, onto a support made of a first material, a thin monocrystalline layer made of a second material that differs from the first material, and performing a predetermined heat treatment carrying out at least one strengthening step on a bonding interface between the thin layer and the support. The thickness of the thin layer is selected as a function of the difference between the coefficients of thermal expansion of the first and second materials and as a function of parameters of predetermined heat treatment, such that the stresses exerted by the heat treatment on the assembly of the support and the transferred thin layer leaves the assembly intact. The method further includes depositing an additional thickness of the second material in the monocrystalline state on the thin layer to thicken it. The method is useful for fabrication of hetero-substrates with a relatively thick useful layer.
摘要翻译：一种制造包括用于微电子学，光电子学或光学学中的至少一种半导体材料的结构的方法。该方法包括将由第一材料制成的支撑体转移到与第一材料不同的第二材料制成的薄单晶层上，并且进行至少一个加强步骤的预定热处理，该加强步骤在薄的层和支持。选择薄层的厚度作为第一和第二材料的热膨胀系数之间的差异的函数，并且作为预定热处理的参数的函数，使得通过热处理施加在组件上的应力支撑和转移的薄层离开组件完好无损。该方法还包括在薄层上沉积单晶状态的第二材料的附加厚度以使其变稠。该方法可用于制造具有相对厚的有用层的异质衬底。

10. 发明申请

US20080248251A1 SEMICONDUCTOR SUBSTRATES HAVING USEFUL AND TRANSFER LAYERS 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US20080248251A1
公开(公告)日：2008-10-09
申请号：US12139599
申请日：2008-06-16
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： B32B3/00
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

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