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41. 发明申请

US20090170286A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体基板的方法和制造半导体器件的方法
公开(公告)号：US20090170286A1
公开(公告)日：2009-07-02
申请号：US12333650
申请日：2008-12-12
申请人： Naoki TSUKAMOTO , Akihisa SHIMOMURA
发明人： Naoki TSUKAMOTO , Akihisa SHIMOMURA
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , B23K26/3576 , C30B33/04 , H01L21/02686 , H01L21/84 , H01L29/66772
摘要： A semiconductor substrate is manufactured in which a plurality of single crystal semiconductor layers is fixed to a base substrate having low heat resistance such as a glass substrate with a buffer layer interposed therebetween. A plurality of single crystal semiconductor substrates is prepared, each of which includes a buffer layer and a damaged region which is formed by adding hydrogen ions to each semiconductor substrate and contains a large amount of hydrogen. One or more of these single crystal semiconductor substrates is fixed to a base substrate and irradiated with an electromagnetic wave having a frequency of 300 MHz to 300 GHz, thereby being divided along the damaged region. Fixture of single crystal semiconductor substrates and electromagnetic wave irradiation are repeated to manufacture a semiconductor substrate where a required number of single crystal semiconductor substrates are fixed onto the base substrate.
摘要翻译：制造半导体衬底，其中多个单晶半导体层被固定到具有低耐热性的基底衬底，例如玻璃衬底，其间插入有缓冲层。制备多个单晶半导体衬底，每个单晶半导体衬底包括缓冲层和通过向每个半导体衬底添加氢离子并含有大量氢而形成的损伤区域。将这些单晶半导体基板中的一个或多个固定到基底基板上并用频率为300MHz至300GHz的电磁波照射，从而沿着损伤区域分割。重复单晶半导体衬底的夹持和电磁波照射，制造半导体衬底，其中所需数量的单晶半导体衬底被固定到基底衬底上。

42. 发明申请

US20130009147A1 METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于制造氧化物半导体膜的方法，制造半导体器件的方法和半导体器件
公开(公告)号：US20130009147A1
公开(公告)日：2013-01-10
申请号：US13535523
申请日：2012-06-28
申请人： Masaki KOYAMA , Kosei NEI , Akihisa SHIMOMURA , Suguru HONDO , Toru HASEGAWA
发明人： Masaki KOYAMA , Kosei NEI , Akihisa SHIMOMURA , Suguru HONDO , Toru HASEGAWA
IPC分类号： H01L21/36 , H01L29/12
CPC分类号： H01L21/02565 , H01L21/02422 , H01L21/02488 , H01L21/02554 , H01L21/02631 , H01L21/02686 , H01L29/66969 , H01L29/78603 , H01L29/78606 , H01L29/7869
摘要： In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.
摘要翻译：在形成在绝缘表面上的氧化物半导体膜中，非晶区保持在与基极的界面附近，这被认为是导致晶体管等的特性的变化。接触氧化物半导体膜的基底表面或膜由熔点高于用于氧化物半导体膜的材料的熔点形成。因此，与接触氧化物半导体膜的基面或膜的界面附近存在结晶区域。绝缘金属氧化物用于接触氧化物半导体膜的基底表面或膜。这里使用的金属氧化物是与氧化物半导体膜的材料相同的材料的氧化铝，氧化镓等。

43. 发明申请

US20110287605A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110287605A1
公开(公告)日：2011-11-24
申请号：US13198171
申请日：2011-08-04
申请人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
发明人： Hideomi SUZAWA , Shinya SASAGAWA , Akihisa SHIMOMURA , Junpei MOMO , Motomu KURATA , Taiga MURAOKA , Kosei NEI
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insulating film, bonding a supporting substrate to the single crystal semiconductor substrate by interposing the bonding layer between the supporting substrate and the single crystal semiconductor substrate, dividing the single crystal semiconductor substrate at the fragile region to separate the single crystal semiconductor substrate into a single crystal semiconductor layer attached to the supporting substrate, performing first dry etching treatment on a part of the fragile region remaining on the single crystal semiconductor layer, performing second dry etching treatment on a surface of the single crystal semiconductor layer subjected to the first etching treatment, and irradiating the single crystal semiconductor layer with laser light.
摘要翻译：在单晶半导体基板的表面上形成绝缘膜，在单晶半导体基板中通过用离子束照射单晶半导体基板通过绝缘膜形成脆性区域，在绝缘膜上形成接合层，通过将支撑基板和单晶半导体基板之间的接合层插入到单晶半导体基板的支撑基板上，将单晶半导体基板分割为脆性区域，将单晶半导体基板分离成单晶半导体层，所述支撑基板对残留在所述单晶半导体层上的所述脆性区域的一部分进行第一干蚀刻处理，对经过所述第一蚀刻处理的所述单晶半导体层的表面进行第二干蚀刻处理，具有激光的晶体半导体层。

44. 发明申请

US20110053343A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110053343A1
公开(公告)日：2011-03-03
申请号：US12942156
申请日：2010-11-09
申请人： Sho KATO , Fumito ISAKA , Tetsuya KAKEHATA , Hiromichi GODO , Akihisa SHIMOMURA
发明人： Sho KATO , Fumito ISAKA , Tetsuya KAKEHATA , Hiromichi GODO , Akihisa SHIMOMURA
IPC分类号： H01L21/20
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

45. 发明申请

US20110041910A1 PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：光电转换装置及其制造方法
公开(公告)号：US20110041910A1
公开(公告)日：2011-02-24
申请号：US12854201
申请日：2010-08-11
申请人： Akihisa SHIMOMURA , Sho KATO , Yoshikazu HIURA
发明人： Akihisa SHIMOMURA , Sho KATO , Yoshikazu HIURA
IPC分类号： H01L31/036 , H01L31/18
CPC分类号： H01L31/022441 , H01L31/02363 , H01L31/02366 , H01L31/0682 , H01L31/1804 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： A novel photoelectric conversion device and a manufacturing method thereof are provided. The photoelectric conversion device includes an insulating layer over a light-transmitting base substrate; a single crystal semiconductor layer provided with a plurality of depressions which are filled with the insulating layer; a plurality of first impurity semiconductor layers formed in stripes having one conductivity type and a plurality of second impurity semiconductor layers formed in stripes having a conductivity type which is opposite to the one conductivity type, which are arranged alternately and do not overlap with each other, in a surface layer or over a surface of the single crystal semiconductor layer; first electrodes which are in contact with the first impurity semiconductor layers; and second electrodes which are in contact with the second impurity semiconductor layers.
摘要翻译：提供了一种新颖的光电转换装置及其制造方法。光电转换装置包括在透光基底基板上的绝缘层; 设置有填充有绝缘层的多个凹部的单晶半导体层; 形成为具有一种导电类型的多个第一杂质半导体层和多个第二杂质半导体层，其多个第二杂质半导体层形成为具有与所述一种导电类型相反的导电类型的条带，它们交替排列并且彼此不重叠，在单晶半导体层的表面层或表面上; 与第一杂质半导体层接触的第一电极; 以及与第二杂质半导体层接触的第二电极。

46. 发明申请

US20100081254A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SEMICONDUCTOR LAYER 有权
标题翻译：制造SOI衬底的方法及制造单晶半导体层的方法
公开(公告)号：US20100081254A1
公开(公告)日：2010-04-01
申请号：US12564973
申请日：2009-09-23
申请人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO , Takashi HIROSE
发明人： Akihisa SHIMOMURA , Fumito ISAKA , Sho KATO , Takashi HIROSE
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/76254 , H01L21/02532 , H01L21/0262 , Y02E10/547
摘要： An object is to provide a single crystal semiconductor layer with extremely favorable characteristics without performing CMP treatment or heat treatment at high temperature. Further, an object is to provide a semiconductor substrate (or an SOI substrate) having the above single crystal semiconductor layer. A first single crystal semiconductor layer is formed by a vapor-phase epitaxial growth method on a surface of a second single crystal semiconductor layer over a substrate; the first single crystal semiconductor layer and a base substrate are bonded to each other with an insulating layer interposed therebetween; and the first single crystal semiconductor layer and the second single crystal semiconductor layer are separated from each other at an interface therebetween so as to provide the first single crystal semiconductor layer over the base substrate with the insulating layer interposed therebetween. Thus, an SOI substrate can be manufactured.
摘要翻译：本发明的目的是提供具有非常有利特性的单晶半导体层，而不需要在高温下进行CMP处理或热处理。此外，目的在于提供具有上述单晶半导体层的半导体衬底（或SOI衬底）。在衬底上的第二单晶半导体层的表面上，通过气相外延生长法形成第一单晶半导体层; 第一单晶半导体层和基底基板之间具有绝缘层彼此接合; 并且第一单晶半导体层和第二单晶半导体层在它们之间的界面处彼此分离，以便在绝缘层之间提供第一单晶半导体层，其中绝缘层位于基底衬底上。因此，可以制造SOI衬底。

47. 发明申请

US20090185584A1 LASER OSCILLATOR 有权
标题翻译：激光振荡器
公开(公告)号：US20090185584A1
公开(公告)日：2009-07-23
申请号：US12388585
申请日：2009-02-19
申请人： Ryoji NOMURA , Akihisa SHIMOMURA
发明人： Ryoji NOMURA , Akihisa SHIMOMURA
IPC分类号： H01S3/10
CPC分类号： H01S5/0425 , H01S5/02212 , H01S5/1039 , H01S5/18388 , H01S5/36 , H01S5/423
摘要： The present invention provides a laser oscillator using an electroluminescent material that can enhance directivity of emitted laser light and resistance to a physical impact. The laser oscillator has a first layer including a concave portion, a second layer formed over the first layer to cover the concave portion, and a light emitting element formed over the second layer to overlap the concave portion, wherein the second layer is planarized, an axis of laser light obtained from the light emitting element intersects with a planarized surface of the second layer, the first layer has a curved surface in the concave portion, and a refractive index of the first layer is lower than that of the second layer.
摘要翻译：本发明提供一种使用电致发光材料的激光振荡器，其可以增强发射的激光的方向性和抵抗物理冲击。所述激光振荡器具有第一层，所述第一层包括凹部，形成在所述第一层上以覆盖所述凹部的第二层，以及形成在所述第二层上以与所述凹部重叠的发光元件，其中所述第二层被平坦化，从发光元件获得的激光的轴与第二层的平坦化面相交，第一层在凹部具有弯曲表面，第一层的折射率低于第二层的折射率。

48. 发明申请

US20090162992A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090162992A1
公开(公告)日：2009-06-25
申请号：US12339413
申请日：2008-12-19
申请人： Sho KATO , Fumito ISAKA , Tetsuya KAKEHATA , Hiromichi GODO , Akihisa SHIMOMURA
发明人： Sho KATO , Fumito ISAKA , Tetsuya KAKEHATA , Hiromichi GODO , Akihisa SHIMOMURA
IPC分类号： H01L21/30 , H01L21/02 , H01L21/18
CPC分类号： H01L21/84 , H01L21/76254 , H01L27/1203 , H01L29/78606 , H01L29/78621 , H01L29/78696
摘要： There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.
摘要翻译：提供了一种半导体器件及其制造方法，该半导体器件不仅可以实现穿通电流的抑制，而且可以实现用于接合的硅晶片的再利用，在制造使用SOI技术的半导体器件中。在衬底上形成其中注入了与源极区域和漏极区域相反的导电类型的杂质的半导体膜，并且通过SOI技术将单晶半导体膜结合到半导体膜，以形成堆叠半导体膜。使用堆叠的半导体膜形成沟道形成区域，从而抑制半导体器件中的穿通电流。

49. 发明申请

US20090137095A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR SUBSTRATE MANUFACTURING APPARATUS 有权
标题翻译：制造半导体基板和半导体基板制造设备的方法
公开(公告)号：US20090137095A1
公开(公告)日：2009-05-28
申请号：US12275809
申请日：2008-11-21
申请人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
发明人： Akihisa SHIMOMURA , Masaki KOYAMA , Satohiro OKAMOTO
IPC分类号： H01L21/02 , B29C65/00
CPC分类号： H01L21/76254
摘要： An object is to provide a uniform semiconductor substrate in which defective bonding is reduced. A further object is to manufacture the semiconductor substrate with a high yield. A first substrate and a second substrate are bonded in a reduced-pressure atmosphere by placing the first substrate at a certain region surrounded by an airtight holding mechanism provided over a support to surround the certain region of a surface of the support; placing the second substrate so as to come to be in contact with the airtight holding mechanism to ensure airtightness of a space surrounded by the support, the airtight holding mechanism, and the second substrate; evacuating the space whose airtightness is secured, thereby reducing an pressure in the space; disposing the second substrate in close contact with the first substrate using difference between the pressure in the space and outside atmpspheric pressure; and performing heat treatment.
摘要翻译：目的在于提供一种均匀的半导体衬底，其中不良接合被降低。另一个目的是以高产率制造半导体衬底。第一基板和第二基板通过将第一基板放置在由设置在支撑件上的气密保持机构包围的一定区域上而在减压气氛中接合，以围绕支撑体的表面的特定区域; 将第二基板放置成与气密保持机构接触，以确保由支撑体，气密保持机构和第二基板包围的空间的气密性; 疏散其气密性的空间，从而减小空间中的压力; 使用空间中的压力和外部大气压之间的差异将第二基板设置为与第一基板紧密接触; 并进行热处理。

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