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41. 发明授权

US08975182B2 Method for manufacturing semiconductor device, and semiconductor device 有权
标题翻译：半导体装置的制造方法以及半导体装置
公开(公告)号：US08975182B2
公开(公告)日：2015-03-10
申请号：US14234476
申请日：2012-07-27
申请人： Satoshi Tanimoto , Yusuke Zushi , Yoshinori Murakami , Takashi Iseki , Masato Takamori , Shinji Sato , Kohei Matsui
发明人： Satoshi Tanimoto , Yusuke Zushi , Yoshinori Murakami , Takashi Iseki , Masato Takamori , Shinji Sato , Kohei Matsui
IPC分类号： H01L21/44 , H01L23/48 , H01L23/52 , H01L29/40 , H01L23/00 , B23K35/28 , B23K35/00 , B23K35/02 , C22C18/04 , B23K1/00 , B23K1/008 , B23K1/19 , H01L29/16 , H01L29/20
CPC分类号： H01L29/1602 , B23K1/0016 , B23K1/008 , B23K1/19 , B23K1/206 , B23K35/007 , B23K35/025 , B23K35/282 , B23K35/286 , B23K2101/34 , B23K2101/40 , B23K2101/42 , C22C18/04 , H01L24/29 , H01L24/32 , H01L24/83 , H01L29/1608 , H01L29/2003 , H01L2224/29118 , H01L2224/32225 , H01L2224/83001 , H01L2224/83203 , H01L2224/83447 , H01L2224/83815 , H01L2924/01322 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/15747 , H01L2924/15787 , H01L2924/01013 , H01L2924/0103 , H01L2924/00
摘要： A method for manufacturing a semiconductor device is carried out by readying each of a semiconductor element, a substrate having Cu as a principal element at least on a surface, and a ZnAl solder chip having a smaller shape than that of the semiconductor element; disposing the semiconductor element and the substrate so that respective bonding surfaces face each other, and sandwiching the ZnAl eutectic solder chip between the substrate and the semiconductor element; increasing the temperature of the ZnAl solder chip sandwiched between the substrate and the semiconductor element while applying a load to the ZnAl solder chip such that the ZnAl solder chip melts to form a ZnAl solder layer; and reducing the temperature of the ZnAl solder layer while applying a load to the ZnAl solder layer.
摘要翻译：半导体器件的制造方法是通过将半导体元件，至少具有表面的Cu作为主要元素的基板和比半导体元件的形状小的ZnAl焊料芯片进行准位来进行的。将所述半导体元件和所述基板配置为使得各个接合面彼此面对，并将所述ZnAl共晶焊料夹在所述基板和所述半导体元件之间; 在向ZnAl焊料芯片施加负载的同时，增加夹在基板和半导体元件之间的ZnAl焊料芯片的温度，使得ZnAl焊料芯片熔化形成ZnAl焊料层; 并且在向ZnAl焊料层施加负载的同时降低ZnAl焊料层的温度。

42. 发明授权

US08222648B2 Silicon carbide semiconductor device and method for producing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US08222648B2
公开(公告)日：2012-07-17
申请号：US11991249
申请日：2006-08-22
申请人： Satoshi Tanimoto , Noriaki Kawamoto , Takayuki Kitou , Mineo Miura
发明人： Satoshi Tanimoto , Noriaki Kawamoto , Takayuki Kitou , Mineo Miura
IPC分类号： H01L29/24
CPC分类号： H01L29/66068 , H01L21/049 , H01L21/31666 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/7395 , H01L29/7802
摘要： A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).
摘要翻译：碳化硅半导体器件（90）包括：1）碳化硅衬底（1）; 2）由多晶硅制成的栅电极（7）和3）夹在所述碳化硅衬底（1）和所述栅电极（7）之间的ONO绝缘膜（9），从而形成栅极结构，所述ONO绝缘膜（9）包括从所述碳化硅衬底（1）：a）第一氧化硅膜（O）（10），b）SiN膜（N）（11），和c）SiN热氧化膜（O）（12,12a，12b）。氮在以下位置中的至少一个中包括：i）在第一氧化物硅膜（O）（10）中和在碳化硅衬底（1）附近，以及ii）在碳化硅衬底（1）和第一氧化硅膜（O）（10）。

43. 发明申请

US20110017991A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110017991A1
公开(公告)日：2011-01-27
申请号：US12934199
申请日：2009-02-27
申请人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
发明人： Satoshi Tanimoto , Norihiko Kiritani , Toshiharu Makino , Masahiko Ogura , Norio Tokuda , Hiromitsu Kato , Hideyo Okushi , Satoshi Yamasaki
IPC分类号： H01L29/12 , H01L29/06 , H01L29/22 , H01L29/16 , H01L29/24 , H01L29/20
CPC分类号： H01L29/861 , H01L29/1602 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/45 , H01L29/452 , H01L29/456 , H01L29/47 , H01L29/475 , H01L29/872
摘要： In this junction element 1, when a forward voltage is applied, a depletion layer is formed in a semiconductor layer 2, prohibiting electrons present in an electrode layer 4 to move into the semiconductor layer 2. For this reason, a majority of holes in a semiconductor layer 3 do not disappear by recombination with conduction electrons in the semiconductor layer 2, but reach the electrode layer 4 while diffusing into the semiconductor layer 2. Accordingly, the junction element 1 can serve as a good conductor for holes, while avoiding the influence of a resistance value, and allows a current to flow therethrough at a level equal to or more than that achieved by a semiconductor element formed of a Si or SiC semiconductor. The present invention is applicable to any semiconductor material in which at least one of a donor level and an acceptor level is located at a sufficiently deep position beyond a thermal excitation energy at an operating temperature, such as diamond, zinc oxide (ZnO), aluminum nitride (AlN), or boron nitride (BN). The present invention is also applicable to even a material having a shallow impurity level at room temperature, such as silicon (Si), silicon carbide (SiC), gallium nitride (GaN), gallium arsenide (GaAs), or germanium (Ge), as long as operation is performed at such a low temperature that the thermal excitation energy can be sufficiently small.
摘要翻译：在该接合元件1中，当施加正向电压时，在半导体层2中形成耗尽层，禁止存在于电极层4中的电子移动到半导体层2中。因此，大部分孔半导体层3不会通过与半导体层2中的导电电子的复合而消失，而是在扩散到半导体层2中的同时到达电极层4.因此，接合元件1可以用作孔的良导体，同时避免影响的电阻值，并且允许电流以等于或大于由Si或SiC半导体形成的半导体元件实现的电平流过。本发明可应用于任何半导体材料，其中施主电平和受主电平中的至少一个位于超过工作温度下的热激发能的足够深的位置，例如金刚石，氧化锌（ZnO），铝氮化物（AlN）或氮化硼（BN）。本发明甚至也可应用于诸如硅（Si），碳化硅（SiC），氮化镓（GaN），砷化镓（GaAs）或锗（Ge）等室温下具有浅杂质水平的材料，只要在如此低的温度下进行操作即可使热激发能足够小。

44. 发明授权

US07611788B2 Fuel cell stack 有权
标题翻译：燃料电池堆
公开(公告)号：US07611788B2
公开(公告)日：2009-11-03
申请号：US11595570
申请日：2006-11-09
申请人： Hideaki Kikuchi , Masaaki Sakano , Yasuhiro Watanabe , Satoshi Tanimoto
发明人： Hideaki Kikuchi , Masaaki Sakano , Yasuhiro Watanabe , Satoshi Tanimoto
IPC分类号： H01M8/04 , H01M8/00 , H01M2/14
CPC分类号： H01M8/0267 , H01M8/0258 , H01M8/04029 , H01M8/04044 , H01M8/241 , H01M8/242 , H01M8/2483 , H01M2008/1095
摘要： This fuel cell stack includes: a coolant-supplying penetration hole and a coolant-discharging penetration hole each communicating with a coolant passage and each penetrates unit fuel cells in a stacking direction. A coolant-supplying penetration hole and a coolant-discharging penetration hole are arranged in a horizontal direction opposing with each other so as to sandwich a power generating region. The fuel cell stack further includes: an air draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a higher position than an uppermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction; and a coolant draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a lower position than a lowermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction.
摘要翻译：该燃料电池堆包括：冷却剂供给贯通孔和冷却剂排出贯通孔，其各自与冷却剂通路连通，并且各层在层叠方向上贯通单元燃料电池。冷却剂供给贯通孔和冷却剂排出贯通孔在水平方向上彼此相对配置以夹住发电区域。燃料电池堆还包括：与冷却剂通道连通的排气通孔，其布置成使得其至少一部分位于比冷却剂通道的最上位置更高的位置，并且在堆叠中穿透单元燃料电池方向; 以及冷却剂排出贯通孔，其与冷却剂通路连通并且布置成使得其至少一部分位于比冷却剂通道的最低位置更低的位置处，并且沿堆叠方向穿透单元燃料电池。

45. 发明申请

US20090245144A1 IP TELEPHONE TERMINAL 有权
标题翻译： IP电话终端
公开(公告)号：US20090245144A1
公开(公告)日：2009-10-01
申请号：US12415796
申请日：2009-03-31
申请人： Susumu CHIDA , Satoshi TANIMOTO , Tokunori KATO
发明人： Susumu CHIDA , Satoshi TANIMOTO , Tokunori KATO
IPC分类号： H04L12/16
CPC分类号： H04M1/2535 , H04M3/42178 , H04M2250/64
摘要： In an IP telephone terminal, a function implementation controlling unit is configured so as to be capable of controlling implementation of a function instructed by a file received via IP telephone communications when the communicating unit receives the file. The configuration data storing unit stores configuration data that is used by the function implementation controlling unit to implement the function. The configuration data acquisition controlling unit performs control to acquire configuration data from the configuration data storing unit when a communicating unit receives a read file that is transmitted from an external IP telephone terminal. The response file generation controlling unit performs control to generate a response file including the configuration data. The response file transmission controlling unit controls a communicating unit to transmit the response file to the external IP telephone terminal that has transmitted the read file. The update controlling unit performs, when the communicating unit receives a write file, control to update the configuration data based on the write file that is transmitted from the external IP telephone terminal that has received the response file.
摘要翻译：在IP电话终端中，功能实现控制单元被配置为当通信单元接收到文件时能够控制通过IP电话通信接收的文件所指示的功能的实现。配置数据存储单元存储由功能实现控制单元用于实现该功能的配置数据。当通信单元接收到从外部IP电话终端发送的读取文件时，配置数据获取控制单元执行控制以从配置数据存储单元获取配置数据。响应文件生成控制单元执行控制以生成包括配置数据的响应文件。响应文件传输控制单元控制通信单元将响应文件发送到已经发送读取文件的外部IP电话终端。当通信单元接收到写入文件时，更新控制单元执行基于从接收到响应文件的外部IP电话终端发送的写入文件来更新配置数据的控制。

46. 发明授权

US07535025B2 Structure and manufacturing method for a silicon carbide semiconductor device 有权
标题翻译：碳化硅半导体器件的结构和制造方法
公开(公告)号：US07535025B2
公开(公告)日：2009-05-19
申请号：US11003599
申请日：2004-12-06
申请人： Satoshi Tanimoto , Hideyo Okushi
发明人： Satoshi Tanimoto , Hideyo Okushi
IPC分类号： H01L29/24
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/7395 , H01L29/7828 , H01L29/94
摘要： In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide substrate is treated with a predetermined heat process at a temperature which is lower than a thermal oxidization temperature by which a gate insulating film is formed and is sufficient to carry out a contact annealing between the singlecrystalline silicon carbide substrate and a metal after a whole surrounding of the gate insulating film is enclosed with the singlecrystalline silicon carbide substrate, a field insulating film, and the gate electrode. The present invention is applicable to a MOS capacitor, an n channel planar power MOSFET, and an n channel planar power IGBT.
摘要翻译：在碳化硅半导体器件及其制造方法中，以与栅极电极不同且与单晶碳化硅基板接触的金属电极在预定的热处理下，在低于热氧化温度的温度下进行处理，形成栅极绝缘膜，并且足以在单晶碳化硅衬底和金属之间进行接触退火，整个栅极绝缘膜周围被单晶碳化硅衬底，场绝缘膜和栅极封闭电极。本发明可应用于MOS电容器，n沟道平面功率MOSFET和n沟道平面功率IGBT。

47. 发明申请

US20080292941A1 FUEL CELL 有权
标题翻译：燃料电池
公开(公告)号：US20080292941A1
公开(公告)日：2008-11-27
申请号：US12126523
申请日：2008-05-23
申请人： Masaru ODA , Masahiro Mohri , Hiroaki Ohta , Yasuhiro Watanabe , Satoshi Tanimoto , Nobuhiro Saito
发明人： Masaru ODA , Masahiro Mohri , Hiroaki Ohta , Yasuhiro Watanabe , Satoshi Tanimoto , Nobuhiro Saito
IPC分类号： H01M2/00
CPC分类号： H01M8/026 , H01M8/0263 , H01M2008/1095
摘要： An oxygen-containing gas supply passage and an oxygen-containing gas discharge passage extend through a set of diagonal positions of a first metal separator, and a fuel gas supply passage and a fuel gas discharge passage extend through the other set of diagonal positions of the first metal separator. A fuel gas flow field is connected to the fuel gas supply passage through an inlet buffer at an upper position, and connected to the fuel gas discharge passage through an outlet buffer at a lower position. The inlet buffer includes a first inlet buffer area adjacent to the fuel gas supply passage and a second inlet buffer area adjacent to the fuel gas flow field. Grooves of the first inlet buffer area are deeper than grooves of the second inlet buffer area in the stacking direction.
摘要翻译：含氧气体供给通道和含氧气体排出通道延伸穿过第一金属分离器的一组对角位置，并且燃料气体供应通道和燃料气体排出通道延伸穿过另一组对角线位置第一金属分离器。燃料气体流场通过上部位置的入口缓冲器连接到燃料气体供应通道，并且通过下部位置处的出口缓冲器连接到燃料气体排出通道。入口缓冲器包括与燃料气体供应通道相邻的第一入口缓冲区域和与燃料气体流场相邻的第二入口缓冲区域。第一入口缓冲区的槽比层叠方向上的第二入口缓冲区的槽深。

48. 发明申请

US20070154758A1 Fuel cell stack 有权
标题翻译：燃料电池堆
公开(公告)号：US20070154758A1
公开(公告)日：2007-07-05
申请号：US11595570
申请日：2006-11-09
申请人： Hideaki Kikuchi , Masaaki Sakano , Yasuhiro Watanabe , Satoshi Tanimoto
发明人： Hideaki Kikuchi , Masaaki Sakano , Yasuhiro Watanabe , Satoshi Tanimoto
IPC分类号： H01M8/04 , H01M8/10
CPC分类号： H01M8/0267 , H01M8/0258 , H01M8/04029 , H01M8/04044 , H01M8/241 , H01M8/242 , H01M8/2483 , H01M2008/1095
摘要： This fuel cell stack includes: a coolant-supplying penetration hole and a coolant-discharging penetration hole each communicating with a coolant passage and each penetrates unit fuel cells in a stacking direction. A coolant-supplying penetration hole and a coolant-discharging penetration hole are arranged in a horizontal direction opposing with each other so as to sandwich a power generating region. The fuel cell stack further includes: an air draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a higher position than an uppermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction; and a coolant draining penetration hole communicating with the coolant passage and arranged such that at least one part thereof is located at a lower position than a lowermost position of the coolant passage, and penetrates the unit fuel cells in the stacking direction.
摘要翻译：该燃料电池堆包括：冷却剂供给贯通孔和冷却剂排出贯通孔，其各自与冷却剂通路连通，并且各层在层叠方向上贯通单元燃料电池。冷却剂供给贯通孔和冷却剂排出贯通孔在水平方向上彼此相对配置以夹住发电区域。燃料电池堆还包括：与冷却剂通道连通的排气通孔，其布置成使得其至少一部分位于比冷却剂通道的最上位置更高的位置，并且在堆叠中穿透单元燃料电池方向; 以及冷却剂排出贯通孔，其与冷却剂通路连通并且布置成使得其至少一部分位于比冷却剂通道的最低位置更低的位置处，并且沿堆叠方向穿透单元燃料电池。

49. 发明授权

US06285950B1 Vehicle navigation system 有权
标题翻译：车载导航系统
公开(公告)号：US06285950B1
公开(公告)日：2001-09-04
申请号：US09311330
申请日：1999-05-13
申请人： Satoshi Tanimoto
发明人： Satoshi Tanimoto
IPC分类号： G01C2134
CPC分类号： G01C21/34
摘要： A vehicle navigation system estimates a travel time to a destination. Estimation of a travel time to a destination includes two steps of calculation. First, a travel time to an intermediate point forward of the present vehicle position is calculated based on the current average speed. Second, a travel time to the destination from the intermediate point is calculated based on the costs of road segments. A travel time to the destination from the present vehicle position is a sum of the travel time obtained by the first calculation and the travel time obtained by the second calculation. Since the current average speed reflects the road conditions to which the vehicle is presently subjected, the travel time to the intermediate point calculated with the current average speed is more accurate than a travel time that would be calculated by adding the costs between the present vehicle position and the intermediate position. As a result, a sum of the travel times obtained by the first calculation and the second calculation is more accurate than a travel time that is calculated by adding the costs throughout the road segments between the present vehicle position and the destination.
摘要翻译：车辆导航系统估计到目的地的行车时间。到达目的地的旅行时间的估计包括计算的两个步骤。首先，基于当前的平均速度来计算到当前车辆位置前方的中间点的行驶时间。其次，根据道路段的成本计算从中间点到目的地的行车时间。从当前车辆位置到目的地的行驶时间是通过第一次计算获得的行驶时间和通过第二次计算获得的行驶时间的总和。由于当前的平均速度反映了车辆当前遭受的道路状况，所以以当前平均速度计算的到中间点的行驶时间比通过将当前车辆位置和中间位置。结果，通过第一计算和第二计算获得的行进时间的总和比通过在当前车辆位置和目的地之间的整个路段增加成本而计算的行驶时间更精确。

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