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1. 发明申请

US20120081752A1 IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置
公开(公告)号：US20120081752A1
公开(公告)日：2012-04-05
申请号：US13073650
申请日：2011-03-28
申请人： Satoshi TANIMOTO
发明人： Satoshi TANIMOTO
IPC分类号： G06K15/00 , G06F3/12
CPC分类号： G06F3/1208 , G06F3/121 , G06F3/122 , G06F3/1235 , G06F3/1263 , G06F3/1267 , G06F3/1279 , G06K15/1886 , G06K15/408 , H04N1/32363 , H04N1/32635 , H04N1/32657 , H04N1/32667 , H04N1/32694 , H04N2201/0094 , H04N2201/3202 , H04N2201/3288 , H04N2201/3295
摘要： An image forming apparatus is provided, including an image forming mechanism which executes a printing process; an object data memory which stores image data as an object of the printing process when a printing instruction is received; a re-formation condition memory which stores a type of a printing function and whether or not image data is an object of image re-formation in con'elation with each other; an object judging mechanism which judges whether or not the image data as a source of the image formation is the object of the image re-formation; and a data deleting mechanism which deletes the image data as the source of the image formation from the object data memory if the image data as the source of the image formation is not the object of the image re-formation.
摘要翻译：提供一种图像形成装置，包括执行打印处理的图像形成机构; 对象数据存储器，当接收到打印指令时，存储作为打印处理对象的图像数据; 存储打印功能的类型的重新形成条件存储器以及图像数据是否是彼此对应的图像重新形成的对象; 判断作为图像形成的来源的图像数据是否是图像重构的对象的对象判断机构; 以及数据删除机构，如果作为图像形成的源的图像数据不是图像重建的对象，则从对象数据存储器中删除作为图像形成的源的图像数据。

2. 发明申请

US20090050898A1 Silicon carbide semiconductor device and method for producing the same 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US20090050898A1
公开(公告)日：2009-02-26
申请号：US11991249
申请日：2006-08-22
申请人： Satoshi Tanimoto , Noriaki Kawamoto , Takayuki Kitou , Mineo Miura
发明人： Satoshi Tanimoto , Noriaki Kawamoto , Takayuki Kitou , Mineo Miura
IPC分类号： H01L29/24 , H01L21/316
CPC分类号： H01L29/66068 , H01L21/049 , H01L21/31666 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/7395 , H01L29/7802
摘要： A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).
摘要翻译：碳化硅半导体器件（90）包括：1）碳化硅衬底（1）; 2）由多晶硅制成的栅电极（7）和3）夹在所述碳化硅衬底（1）和所述栅电极（7）之间的ONO绝缘膜（9），从而形成栅极结构，所述ONO绝缘膜（9）包括从所述碳化硅衬底（1）：a）第一氧化硅膜（O）（10），b）SiN膜（N）（11），和c）SiN热氧化膜（O）（12,12a，12b）。氮在以下位置中的至少一个中包括：i）在第一氧化物硅膜（O）（10）中和在碳化硅衬底（1）附近，以及ii）在碳化硅衬底（1）和第一氧化硅膜（O）（10）。

3. 发明授权

US07329614B2 Heat resistant ohmic electrode and method of manufacturing the same 失效
标题翻译：耐热欧姆电极及其制造方法
公开(公告)号：US07329614B2
公开(公告)日：2008-02-12
申请号：US11592165
申请日：2006-11-03
申请人： Satoshi Tanimoto
发明人： Satoshi Tanimoto
IPC分类号： H01L21/469
CPC分类号： H01L21/0485 , H01L21/046
摘要： An aspect of the present invention provides an ohmic electrode that includes an SiC (silicon carbide) substrate, an impurity region selectively formed in a surface of the SiC substrate, an insulating film formed on the surface of the SiC substrate, a contact hole opened through the insulating film, to expose a surface of the impurity region, a conductive thermal reaction layer formed in the contact hole in contact with the impurity region, a conductive plug formed to fill the contact hole, an metal wiring formed on the insulating film and electrically coupled to the plug, and a diffusion preventive layer formed between the metal wiring and the plug to electrically couple the plug with the metal wiring, the diffusion preventive layer configured to prevent the diffusion of metal atoms from the metal wiring.
摘要翻译：本发明的一个方面提供了一种欧姆电极，其包括SiC（碳化硅）衬底，选择性地形成在SiC衬底的表面中的杂质区域，形成在SiC衬底的表面上的绝缘膜，所述绝缘膜暴露出所述杂质区的表面，形成在与所述杂质区接触的所述接触孔中的导电性热反应层，形成为填充所述接触孔的导电性插塞，形成在所述绝缘膜上的金属布线，耦合到所述插头，以及形成在所述金属布线和所述插头之间以将所述插头与所述金属布线电耦合的防扩散层，所述扩散防止层被配置为防止金属原子从所述金属布线扩散。

4. 发明申请

US20050093000A1 Silicon carbide semiconductor device and its manufacturing method 有权
标题翻译：碳化硅半导体器件及其制造方法
公开(公告)号：US20050093000A1
公开(公告)日：2005-05-05
申请号：US11003599
申请日：2004-12-06
申请人： Satoshi Tanimoto , Hideyo Okushi
发明人： Satoshi Tanimoto , Hideyo Okushi
IPC分类号： H01L21/04 , H01L29/12 , H01L29/24 , H01L29/739 , H01L29/78 , H01L29/94 , H01L29/15 , H01L21/00
CPC分类号： H01L29/66068 , H01L29/1608 , H01L29/7395 , H01L29/7828 , H01L29/94
摘要： In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide substrate is treated with a predetermined heat process at a temperature which is lower than a thermal oxidization temperature by which a gate insulating film is formed and is sufficient to carry out a contact annealing between the singlecrystalline silicon carbide substrate and a metal after a whole surrounding of the gate insulating film is enclosed with the singlecrystalline silicon carbide substrate, a field insulating film, and the gate electrode. The present invention is applicable to a MOS capacitor, an n channel planar power MOSFET, and an n channel planar power IGBT.
摘要翻译：在碳化硅半导体器件及其制造方法中，以与栅极电极不同且与单晶碳化硅基板接触的金属电极在预定的热处理下，在低于热氧化温度的温度下进行处理，形成栅极绝缘膜，并且足以在单晶碳化硅衬底和金属之间进行接触退火，整个栅极绝缘膜周围被单晶碳化硅衬底，场绝缘膜和栅极封闭电极。本发明可应用于MOS电容器，n沟道平面功率MOSFET和n沟道平面功率IGBT。

5. 发明授权

US06256579B1 Vehicle navigation system with road link re-costing 失效
标题翻译：车辆导航系统与道路连接重新成本计算
公开(公告)号：US06256579B1
公开(公告)日：2001-07-03
申请号：US09352444
申请日：1999-07-13
申请人： Satoshi Tanimoto
发明人： Satoshi Tanimoto
IPC分类号： G01C2100
CPC分类号： G01C21/3484
摘要： The present invention provides a vehicle navigation system that can customize an optimum route to the driver's road preference. The vehicle navigation system includes at least one data table that contains a set of road data. Each set of road data represents characteristics of one road segment, such as a travel time, a length and a type of the road segment. The navigation system also includes at least one coefficient table that contains a number of coefficients. Each coefficient corresponds to one road segment. In a route search operation, an optimum route is calculated so as to optimize road data that have been modified by weighting the road data by the coefficients. The coefficients are changed based on the user's personal preference on the corresponding road segments. More specifically, a coefficient is penalized when the corresponding road segment that was part of the optimum route was not traveled. On the other hand, a coefficient is credited when the corresponding road segment that was not part of the optimum route was actually traveled.
摘要翻译：本发明提供一种车辆导航系统，其可以根据驾驶员的道路偏好来定制最佳路线。车辆导航系统包括至少一个包含一组道路数据的数据表。每组道路数据表示一条路段的特征，例如行驶时间，路段的长度和类型。导航系统还包括至少一个包含多个系数的系数表。每个系数对应于一个路段。在路线搜索操作中，计算最佳路线，以便通过系数对道路数据进行加权来优化已经修改的道路数据。系数根据用户对相应路段的个人喜好而改变。更具体地，当作为最佳路线的一部分的对应的路段未行进时，系数被惩罚。另一方面，当不是最佳路线的一部分的对应路段实际行驶时，系数被记入。

6. 发明授权

US5674563A Method for ferroelectric thin film production 失效
标题翻译：铁电薄膜生产方法
公开(公告)号：US5674563A
公开(公告)日：1997-10-07
申请号：US305536
申请日：1994-09-14
申请人： Yasuo Tarui , Yoshihiro Soutome , Shinichi Morita , Satoshi Tanimoto
发明人： Yasuo Tarui , Yoshihiro Soutome , Shinichi Morita , Satoshi Tanimoto
IPC分类号： C01G25/00 , C23C16/06 , C23C16/40 , C23C16/44 , C30B29/32 , H01G4/10 , H01G4/12 , H01G4/33 , C23C16/00
CPC分类号： C23C16/45561 , C23C16/409
摘要： A ferroelectric thin film is produced on a substrate placed in an oxygen gas atmosphere within a reaction chamber. Evaporated source materials (organic metal compounds) are separately introduced in a predetermined sequence into the reaction chamber to produce a PZT or PLZT layer structure having an estimated stoichiometric composition. This cycle of introduction of the source materials is repeated continuously to produce a PZT or PLZT ferroelectric thin film having a predetermined number of PZT or PLZT layer structures piled on the substrate.
摘要翻译：在放置在反应室内的氧气气氛中的基板上产生铁电薄膜。将蒸发源材料（有机金属化合物）以预定顺序分别引入反应室中以产生具有估计化学计量组成的PZT或PLZT层结构。连续重复引入源材料的这个循环，以产生具有预定数量的PZT或PLZT层结构的PZT或PLZT铁电薄膜，该PZT或PLZT层结构堆叠在基板上。

7. 发明授权

US09093679B2 Method of shutting down fuel cell system 有权
标题翻译：关闭燃料电池系统的方法
公开(公告)号：US09093679B2
公开(公告)日：2015-07-28
申请号：US13237248
申请日：2011-09-20
申请人： Shinjiro Morita , Nobutaka Nakajima , Go Kikuchi , Nobuki Koiwa , Satoshi Tanimoto , Kentaro Nagoshi , Katsumi Hayashi , Koichiro Miyata , Hiroshi Morikawa , Kaoru Yamazaki , Takashi Yamamoto , Shinya Watanabe
发明人： Shinjiro Morita , Nobutaka Nakajima , Go Kikuchi , Nobuki Koiwa , Satoshi Tanimoto , Kentaro Nagoshi , Katsumi Hayashi , Koichiro Miyata , Hiroshi Morikawa , Kaoru Yamazaki , Takashi Yamamoto , Shinya Watanabe
IPC分类号： H01M8/04 , H01M16/00
CPC分类号： H01M8/04955 , H01M8/04388 , H01M8/04753 , H01M8/04953 , H01M16/006 , Y02E60/50
摘要： A method of shutting down a fuel cell system includes a first step of supplying hydrogen gas and air to a fuel cell stack to thereby cause the fuel cell stack to generate electricity, and a second step of stopping supply of the hydrogen gas, and then supplying air to the fuel cell stack so as to cause the fuel cell stack to generate electricity upon detection of a command to shut down the fuel cell stack. In the second step, when the pressure of the hydrogen gas is lowered to a preset lower-limit value based on an anode pressure, which actually is measured, the fuel cell stack is caused to stop generating electricity.
摘要翻译：关闭燃料电池系统的方法包括：向燃料电池堆供给氢气和空气，从而使燃料电池堆发电的第一工序;停止氢气供给的第二工序，空气到燃料电池堆，以便在检测到关闭燃料电池堆的命令时使燃料电池堆发电。在第二步骤中，当基于实际测量的阳极压力将氢气的压力降低到预设的下限值时，燃料电池堆被停止发电。

8. 发明授权

US08174717B2 Communication apparatus 有权
标题翻译：通讯设备
公开(公告)号：US08174717B2
公开(公告)日：2012-05-08
申请号：US12037919
申请日：2008-02-26
申请人： Satoshi Tanimoto
发明人： Satoshi Tanimoto
IPC分类号： G06F3/12 , G06K15/00 , G08C19/16 , G08C19/12
CPC分类号： H04N1/32133 , H04N1/00127 , H04N1/00342
摘要： A communication apparatus includes: a receiving unit which receives reception data transmitted from an external apparatus; an acquiring unit which acquires identification information for identifying the external apparatus which transmits the reception data; and a tag writer which wirelessly write the identification information into a wireless tag.
摘要翻译：一种通信装置，包括：接收单元，其接收从外部设备发送的接收数据; 获取单元，其获取用于识别发送接收数据的外部设备的识别信息; 以及将识别信息无线地写入无线标签的标签写入器。

9. 发明申请

US20120077102A1 METHOD OF SHUTTING DOWN FUEL CELL SYSTEM 有权
标题翻译：切断燃料电池系统的方法
公开(公告)号：US20120077102A1
公开(公告)日：2012-03-29
申请号：US13237248
申请日：2011-09-20
申请人： Shinjiro MORITA , Nobutaka Nakajima , Go Kikuchi , Nobuki Koiwa , Satoshi Tanimoto , Kentaro Nagoshi , Katsumi Hayashi , Koichiro Miyata , Hiroshi Morikawa , Kaoru Yamazaki , Takashi Yamamoto , Shinya Watanabe
发明人： Shinjiro MORITA , Nobutaka Nakajima , Go Kikuchi , Nobuki Koiwa , Satoshi Tanimoto , Kentaro Nagoshi , Katsumi Hayashi , Koichiro Miyata , Hiroshi Morikawa , Kaoru Yamazaki , Takashi Yamamoto , Shinya Watanabe
IPC分类号： H01M8/04
CPC分类号： H01M8/04955 , H01M8/04388 , H01M8/04753 , H01M8/04953 , H01M16/006 , Y02E60/50
摘要： A method of shutting down a fuel cell system includes a first step of supplying hydrogen gas and air to a fuel cell stack to thereby cause the fuel cell stack to generate electricity, and a second step of stopping supply of the hydrogen gas, and then supplying air to the fuel cell stack so as to cause the fuel cell stack to generate electricity upon detection of a command to shut down the fuel cell stack. In the second step, when the pressure of the hydrogen gas is lowered to a preset lower-limit value based on an anode pressure, which actually is measured, the fuel cell stack is caused to stop generating electricity.
摘要翻译：关闭燃料电池系统的方法包括：向燃料电池堆供给氢气和空气，从而使燃料电池堆发电的第一工序;停止氢气供给的第二工序，空气到燃料电池堆，以便在检测到关闭燃料电池堆的命令时使燃料电池堆发电。在第二步骤中，当基于实际测量的阳极压力将氢气的压力降低到预设的下限值时，燃料电池堆被停止发电。

10. 发明申请

US20120064731A1 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：硅碳化硅半导体器件及其制造方法
公开(公告)号：US20120064731A1
公开(公告)日：2012-03-15
申请号：US13299136
申请日：2011-11-17
申请人： Satoshi TANIMOTO , Noriaki KAWAMOTO , Takayuki KITOU , Mineo MIURA
发明人： Satoshi TANIMOTO , Noriaki KAWAMOTO , Takayuki KITOU , Mineo MIURA
IPC分类号： H01L21/316
CPC分类号： H01L29/66068 , H01L21/049 , H01L21/31666 , H01L29/1608 , H01L29/513 , H01L29/518 , H01L29/7395 , H01L29/7802
摘要： A silicon carbide semiconductor device (90), includes: 1) a silicon carbide substrate (1); 2) a gate electrode (7) made of polycrystalline silicon; and 3) an ONO insulating film (9) sandwiched between the silicon carbide substrate (1) and the gate electrode (7) to thereby form a gate structure, the ONO insulating film (9) including the followings formed sequentially from the silicon carbide substrate (1): a) a first oxide silicon film (O) (10), b) an SiN film (N) (11), and c) an SiN thermally-oxidized film (O) (12, 12a, 12b). Nitrogen is included in at least one of the following places: i) in the first oxide silicon film (O) (10) and in a vicinity of the silicon carbide substrate (1), and ii) in an interface between the silicon carbide substrate (1) and the first oxide silicon film (O) (10).
摘要翻译：一种碳化硅半导体器件（90），包括：1）碳化硅衬底（1）; 2）由多晶硅制成的栅电极（7）和3）夹在所述碳化硅衬底（1）和所述栅电极（7）之间的ONO绝缘膜（9），从而形成栅极结构，所述ONO绝缘膜（9）包括从所述碳化硅衬底（1）：a）第一氧化硅膜（O）（10），b）SiN膜（N）（11），和c）SiN热氧化膜（O）（12,12a，12b）。氮在以下位置中的至少一个中包括：i）在第一氧化物硅膜（O）（10）中和在碳化硅衬底（1）附近，以及ii）在碳化硅衬底（1）和第一氧化硅膜（O）（10）。

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