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    • 41. 发明申请
    • ILLUMINATION OPTICS FOR EUV MICROLITHOGRAPHY AND ILLUMINATION SYSTEM AND PROJECTION EXPOSURE APPARATUS COMPRISING AN ILLUMINATION OPTICS OF THIS TYPE
    • 用于EUV微结构和照明系统的照明光学和包含这种类型的照明光学的投影曝光装置
    • WO2009132756A1
    • 2009-11-05
    • PCT/EP2009/002584
    • 2009-04-08
    • CARL ZEISS SMT AGFIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • FIOLKA, DamianWARM, BerndtSTEIGERWALD, ChristianENDRES, MartinSTÜTZLE, RalfOSSMANN, JensSCHARNWEBER, RalfHAUF, MarkusDINGER, UdoWALDIS, SeverinKIRCH, MarcHARTJES, Joachim
    • G03F7/20
    • G03F7/70191G03F7/70083
    • An illumination optics for EUV microlithography serves for guiding an illumination light bundle from a radiation source to an object field with an extension ratio between a longer field dimension (x) and a shorter field dimension (y), the ratio being considerably greater than 1. A field facet mirror (13) has a plurality of field facets (19) for setting defined illumination conditions in the object field. A following optics downstream of the field facet mirror (13) serves for transmitting the illumination light into the object field (5). The following optics comprises a pupil facet mirror (14) with a plurality of pupil facets (27). The field facets (19) are in each case individually allocated to the pupil facets (27) so that portions of the illumination light bundle (10) impinging upon in each case one of the field facets (19) are guided on to the object field (5) via the associated pupil facet (27). The field facet mirror (13) not only comprises a plurality of basic illumination field facets (19 G ) which provide a basic illumination of the object field (5) via associated basic illumination pupil facets (27 G ) but also a plurality of correction illumination field facets (19 K ) which provide for a correction of the illumination of the object field (5) via associated correction illumination pupil facets (27 K ). The result is an illumination optics which allows unwanted variations of illumination parameters, for instance an illumination intensity distribution or an illumination angle distribution, to be corrected across the object field.
    • 用于EUV微光刻的照明光学器件用于将照明光束从辐射源引导到物场,其具有在较长场尺寸(x)和较短场尺寸(y)之间的延伸比,该比率远大于1。 场面反射镜(13)具有多个场面(19),用于在对象场中设定定义的照明条件。 场面反射镜(13)下游的跟随光学器件用于将照明光发射到物场(5)中。 以下光学器件包括具有多个光瞳面(27)的光瞳小面镜(14)。 场分面(19)在每种情况下分别被分配给光瞳面(27),使得照射光束(10)中的每一个场景面(19)中的一个照射的部分被引导到物场 (5)通过相关联的光瞳面(27)。 场面反射镜(13)不仅包括通过相关联的基本照明光瞳(27G)提供对象场(5)的基本照明的多个基本照明场面(19G),而且还包括多个校正照明场面 (19K),其经由相关联的校正照明光瞳面(27K)提供对物场(5)的照明的校正。 结果是照明光学元件允许在整个对象场校正照明参数的不期望的变化,例如照明强度分布或照明角度分布。
    • 42. 发明申请
    • MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置
    • WO2009080279A1
    • 2009-07-02
    • PCT/EP2008/010801
    • 2008-12-18
    • CARL ZEISS SMT AGLAYH, MichaelDEGÜNTHER, MarkusPATRA, MichaelWANGLER, JohannesMAUL, ManfredFIOLKA, DamianWEISS, Gundula
    • LAYH, MichaelDEGÜNTHER, MarkusPATRA, MichaelWANGLER, JohannesMAUL, ManfredFIOLKA, DamianWEISS, Gundula
    • G03F7/20
    • G03F7/702G02B5/09G02B26/105G03F7/70116G03F7/7055G03F7/70583
    • A projection exposure apparatus for microlithography comprises illumination optics for illuminating object field points of an object field in an object plane. The illumination optics have, for each object field point of the object field, an exit pupil associated with the object point, wherein sin(γ) is a greatest marginal angle value of the exit pupil, and wherein the illumination optics comprise a multi-mirror array (38) comprising a plurality of mirrors (38s) for adjusting an intensity distribution in exit pupils associated to the object field points. The illumination optics further contain at least one optical system (33a; 33b,; 33c; 3d; 400; 822; 903; 1010; 1103; 1203) for temporally stabilising the illumination of the multi-mirror array (38) so that, for each object field point, the intensity distribution in the associated exit pupil deviates from a desired intensity distribution in the associated exit pupil in the case of a centroid angle value sin(β) by less than 2% expressed in terms of the greatest marginal angle value sin(γ) of the associated exit pupil and/or, in the case of ellipticity by less than 2%, and/or in the case of a pole balance by less than 2%.
    • 用于微光刻的投影曝光装置包括用于照射物平面中的物场的对象场点的照明光学装置。 对于物场的每个物场点,照明光学器件具有与对象点相关联的出射光瞳,其中sin(θ)是出射光瞳的最大边缘角度值,并且其中照明光学器件包括多镜 阵列(38)包括用于调整与对象场点相关联的出射光瞳中的强度分布的多个反射镜(38s)。 照明光学器件进一步包含至少一个光学系统(33a; 33b;; 33c; 3d; 400; 822; 903; 1010; 1103; 1203),用于暂时稳定多镜阵列(38)的照明, 在每个对象场点处,相关联的出射光瞳中的强度分布在相关出射光瞳中偏离期望的强度分布,在重心角度值sin(ß)小于2%的情况下,以最大边角值表示 相关联的出射光瞳的sin(θ)和/或在椭圆率小于2%的情况下,和/或在极平衡小于2%的情况下。
    • 44. 发明申请
    • ILLUMINATION SYSTEM OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置的照明系统
    • WO2009034109A2
    • 2009-03-19
    • PCT/EP2008062007
    • 2008-09-10
    • ZEISS CARL SMT AGFIOLKA DAMIANWALLDORF DANIELSAENGER INGO
    • FIOLKA DAMIANWALLDORF DANIELSAENGER INGO
    • G03F7/20
    • G03F7/702G03F7/70116G03F7/70566
    • The invention concerns an illumination system of a microlithographic projection exposure apparatus comprising a mirror arrangement (21, 43, 45, 52, 63, 84, 93, 140, 250, 340, 540, 940) which has a plurality of mirror units (141, 142, 143, 341, 342, 343, 541, 542, 543), wherein said mirror units are displaceable independently of each other for altering an angle distribution of the light reflected by the mirror arrangement (21, 43, 45, 52, 63, 84, 93, 140, 250, 340, 540, 940), and at least one element (20, 42a, 44, 51, 62, 64, 71, 81, 91, 130, 200, 260, 330, 530, 930) arranged in front of the mirror arrangement (21, 43, 45, 52, 63, 84, 93, 140, 250, 340, 540, 940) in the light propagation direction for producing at least two different states of polarization incident on different mirror units.
    • 本发明涉及一种微光刻投影曝光装置的照明系统,其包括具有多个反射镜单元(141,43)的反射镜装置(21,43,45,52,63,84,93,140,​​250,340,540,940) ,142,143,341,342,343,541,542,543),其中所述镜单元可彼此独立地移位以改变由所述反射镜装置(21,43,45,52,543)反射的光的角度分布, 以及至少一个元件(20,42a,44,51,62,64,71,81,91,130,200,260,330,530),以及至少一个元件 ,930),其布置在光传播方向上的反射镜装置(21,43,45,52,63,84,93,140,​​250,340,540,940)的前面,用于产生至少两个不同的偏振态入射 在不同的镜子单位。
    • 45. 发明申请
    • OPTICAL SYSTEM, IN PARTICULAR ILLUMINATION DEVICE OR PROJECTION OBJECTIVE OF A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 光学系统,特别是照明设备或投影微波投影曝光装置的目标
    • WO2008119794A1
    • 2008-10-09
    • PCT/EP2008/053847
    • 2008-03-31
    • CARL ZEISS SMT AGTOTZECK, MichaelGRUNER, ToralfFIOLKA, Damian
    • TOTZECK, MichaelGRUNER, ToralfFIOLKA, Damian
    • G03F7/20
    • G03F7/70566
    • The invention relates to an optical system, in particular an illumination device or a projection objective of a microlithographic projection exposure apparatus, comprising a polarization compensator (100, 200, 300, 400, 800, 900), which has at least one polarization-modifying partial element (110-140, 210-240, 310-340, 410-440, 810-840, 910-940), and a manipulator (150, 250, 722, 851-854, 951a-954a, 951b-954b), by means of which the position of the at least one partial element can be altered, wherein, in the optical system, at least one operating mode (501-504) can be set in which the intensity, over a region which belongs to a plane perpendicular to the optical axis (OA) and which can be illuminated with light from said light source, does not exceed 20% of the maximum intensity in said plane, and wherein the manipulator (150, 250, 722, 851-854, 951a-954a, 951b-954b) is arranged in said region.
    • 本发明涉及光学系统,特别是微光刻投影曝光装置的照明装置或投影物镜,该光学装置或投影物镜包括极化补偿器(100,200,300,400,800,900),其具有至少一个偏振修正 部分元件(110-140,210-240,310-340,410-440,810-840,910-940)和操纵器(150,250,722,851-854,951a-954a,951b-954b) ,借助于此可以改变至少一个部分元件的位置,其中在光学系统中,可以设置至少一个操作模式(501-504),其中强度在属于 垂直于光轴(OA)的并且可以用来自所述光源的光照射的平面不超过所述平面中最大强度的20%,并且其中所述操纵器(150,250,722,851-854,951a -954a,951b-954b)布置在所述区域中。
    • 49. 发明申请
    • ILLUMINATION SYSTEM FOR A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    • 微波投影曝光装置照明系统
    • WO2006084476A1
    • 2006-08-17
    • PCT/EP2005/001224
    • 2005-02-08
    • CARL ZEISS SMT AGFIOLKA, Damian
    • FIOLKA, Damian
    • G03F7/20
    • G03F7/70191G03F7/70066G03F7/70158
    • An illumination system for a microlithographic projection exposure apparatus (10) comprises an optical axis (28), a pupil plane (74) and a diffractive optical element (76; 76b) as a field defining element. The diffractive optical element (76, 76b) is positioned at least approximately in the pupil plane (74) and extends in an element plane (94) whose normal (96) is inclined with respect to the optical axis (28) by a tilt angle α 0 ° . Rotating the diffrac­tive optical element deforms the illuminated field (14). For example, if the diffractive optical element (76; 76b) is configured such that it produces a rectangular light field (14') for α = 0 ° , rotating the diffractive optical element (76; 76b) around an axis of rotation (80) that is perpendicular both to the optical axis (28) and the scan direction (Y) results in an illuminated field (14) having the shape of a ring segment.
    • 用于微光刻投影曝光装置(10)的照明系统包括作为场限定元件的光轴(28),光瞳平面(74)和衍射光学元件(76; 76b)。 衍射光学元件(76,76b)至少大致位于瞳孔平面(74)中,并且在垂直(96)相对于光轴(28)倾斜倾斜角度的元件平面(94)中延伸 0°。 旋转衍射光学元件使照明场(14)变形。 例如,如果衍射光学元件(76; 76b)被配置为使得其产生用于= 0°的矩形光场(14'),则将衍射光学元件(76; 76b)旋转, 围绕与光轴(28)和扫描方向(Y)垂直的旋转轴线(80)导致具有环形段形状的照明场(14)。