专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20060097186A1 Liquid metal ion gun 有权
标题翻译：液态金属离子枪
公开(公告)号：US20060097186A1
公开(公告)日：2006-05-11
申请号：US11312367
申请日：2005-12-21
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J27/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

32. 发明授权

US07005651B2 Liquid metal ion gun 失效
标题翻译：液态金属离子枪
公开(公告)号：US07005651B2
公开(公告)日：2006-02-28
申请号：US11004903
申请日：2004-12-07
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： G21G5/00 , H01J27/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的粒子成为Ga液态金属离子源的元素（W和Ga），如果反溅射的粒子附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

33. 发明申请

US20070257200A1 Liquid metal ion gun 失效
公开(公告)号：US20070257200A1
公开(公告)日：2007-11-08
申请号：US11730803
申请日：2007-04-04
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J27/02
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

34. 发明授权

US07804073B2 Liquid metal ion gun 有权
标题翻译：液态金属离子枪
公开(公告)号：US07804073B2
公开(公告)日：2010-09-28
申请号：US12076481
申请日：2008-03-19
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J49/10 , H01J27/02
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

35. 发明授权

US07420181B2 Liquid metal ion gun 失效
公开(公告)号：US07420181B2
公开(公告)日：2008-09-02
申请号：US11730803
申请日：2007-04-04
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J37/317 , G21K5/00 , G01N23/00
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

36. 发明申请

US20070152174A1 Focused ion beam apparatus and aperture 失效
公开(公告)号：US20070152174A1
公开(公告)日：2007-07-05
申请号：US11714235
申请日：2007-03-06
申请人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
发明人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
IPC分类号： H01J37/08
CPC分类号： H01J37/09 , H01J2237/022 , H01J2237/0805 , H01J2237/3109
摘要： In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

37. 发明申请

US20060054840A1 Focused ion beam apparatus and aperture 有权
标题翻译：聚焦离子束装置和孔径
公开(公告)号：US20060054840A1
公开(公告)日：2006-03-16
申请号：US11205086
申请日：2005-08-17
申请人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
发明人： Yuichi Madokoro , Shigeru Izawa , Kaoru Umemura , Hiroyasu Kaga
IPC分类号： H01J37/08
CPC分类号： H01J37/09 , H01J2237/022 , H01J2237/0805 , H01J2237/3109
摘要： In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.
摘要翻译：在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

38. 发明申请

US20050127304A1 Liquid metal ion gun 失效
标题翻译：液态金属离子枪
公开(公告)号：US20050127304A1
公开(公告)日：2005-06-16
申请号：US11004903
申请日：2004-12-07
申请人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
发明人： Hiroyasu Kaga , Yuichi Madokoro , Shigeru Izawa , Tohru Ishitani , Kaoru Umemura
IPC分类号： H01J27/26 , G21G5/00 , H01J27/00 , H01J27/02 , H01J37/08
CPC分类号： H01J27/02 , H01J27/22 , H01J37/08 , H01J2237/0805
摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.
摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

39. 发明授权

US07235798B2 Focused ion beam apparatus 有权
标题翻译：聚焦离子束装置
公开(公告)号：US07235798B2
公开(公告)日：2007-06-26
申请号：US11151425
申请日：2005-06-14
申请人： Tohru Ishitani , Hiroyuki Muto , Yuichi Madokoro
发明人： Tohru Ishitani , Hiroyuki Muto , Yuichi Madokoro
IPC分类号： G21K5/10
CPC分类号： H01J37/28 , H01J37/12 , H01J2237/04924 , H01J2237/121 , H01J2237/31749
摘要： In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.
摘要翻译：为了在MEMS和半导体器件的结构分析和故障分析中实现更快的高精度铣削和高分辨率图像观察，将双透镜光学系统安装在聚焦离子束装置上，并且在光学系统中距离离子源中的发射极顶点包括在聚光透镜中并且最靠近离子源设置的接地电极在5至14mm的范围内。

40. 发明申请

US20120235055A1 Focused Ion Beam Device and Focused Ion Beam Processing Method 失效
标题翻译：聚焦离子束装置和聚焦离子束加工方法
公开(公告)号：US20120235055A1
公开(公告)日：2012-09-20
申请号：US13513256
申请日：2010-11-15
申请人： Yuichi Madokoro , Hirokazu Kaneoya , Tsuyoshi Onishi , Isamu Sekihara
发明人： Yuichi Madokoro , Hirokazu Kaneoya , Tsuyoshi Onishi , Isamu Sekihara
IPC分类号： H01J3/28
CPC分类号： G21K1/00 , H01J37/1478 , H01J37/3056 , H01J2237/0458 , H01J2237/31745
摘要： Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.
摘要翻译：公开了一种光学系统的操作，其实现了与样品台机械倾斜的情况相当的聚焦离子束处理的观察。在聚焦离子束光学系统中，控制孔径，倾斜偏转器，光束扫描器和物镜，以照射倾斜到光学系统的光轴的离子束，由此实现薄膜处理和交叉部分处理，而不需要对样品台进行调整和操作。利用聚焦离子束的薄膜处理和横截面加工可以自动化，并且可以提高收率。例如，通过将本发明应用于截面监视器来检测终点，可以容易地自动化横截面处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式