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31. 发明授权

US07601996B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07601996B2
公开(公告)日：2009-10-13
申请号：US11438684
申请日：2006-05-23
申请人： Hiroyuki Ohta , Kenichi Okabe
发明人： Hiroyuki Ohta , Kenichi Okabe
IPC分类号： H01L29/76
CPC分类号： H01L21/26506 , H01L21/26586 , H01L29/1083 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconductor device comprises a field-effect transistor arranged in a semiconductor substrate, which transistor has a gate electrode, source/drain impurity diffusion regions, and carbon layers surrounding the source/drain impurity diffusion regions. Each of the carbon layers is provided at an associated of the source/drain impurity diffusion regions and positioned so as to be offset from the front edge of a source/drain extension in direction away from the gate electrode and to surround as profile the associated source/drain impurity diffusion region.
摘要翻译：半导体器件包括布置在半导体衬底中的场效应晶体管，该晶体管具有栅电极，源/漏杂质扩散区和围绕源极/漏极杂质扩散区的碳层。每个碳层设置在源极/漏极杂质扩散区域的相关联处，并且被定位成从远离栅电极的方向偏离源极/漏极延伸部的前边缘，并且作为轮廓围绕相关源 /漏杂质扩散区域。

32. 发明授权

US07281768B2 Manufacturing method and apparatus of brush 失效
标题翻译：刷子的制造方法和装置
公开(公告)号：US07281768B2
公开(公告)日：2007-10-16
申请号：US10370611
申请日：2003-02-24
申请人： Hisao Sato , Kenichi Okabe , Shunji Kimura
发明人： Hisao Sato , Kenichi Okabe , Shunji Kimura
IPC分类号： A46D3/04 , A46D3/08
CPC分类号： A46B3/02 , A46D3/005 , A46D3/045
摘要： A method of manufacturing a brush includes inserting bristles into bristles insertion holes, and implanting the bristles in a resin material. The inserting further includes preparing sleeves corresponding to cross sectional shapes and cross sectional areas of the bristles insertion holes; introducing the bristles into the sleeves; and independently inserting the bristles within each of the sleeves to the corresponding bristles insertion holes.
摘要翻译：一种制造刷子的方法包括将刷毛插入到刷毛插入孔中，并将刷毛植入树脂材料中。插入件还包括制备对应于刷毛插入孔的横截面形状和横截面面积的套筒; 将刷毛引入袖子; 并且将每个套筒中的刷毛独立地插入到相应的刷毛插入孔中。

33. 发明授权

US06977417B2 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06977417B2
公开(公告)日：2005-12-20
申请号：US10465823
申请日：2003-06-20
申请人： Youichi Momiyama , Kenichi Okabe , Takashi Saiki , Hidenobu Fukutome
发明人： Youichi Momiyama , Kenichi Okabe , Takashi Saiki , Hidenobu Fukutome
IPC分类号： H01L21/265 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L29/66492 , H01L21/26506 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L29/6656 , H01L29/6659 , H04M15/8016 , H04M15/81 , H04M2215/0112 , H04M2215/2026 , H04M2215/22 , H04M2215/32 , H04M2215/7414 , H04W4/24
摘要： An impurity-diffused layer having an extension structure is formed first by implanting Sb ion as an impurity for forming a pocket region; then by implanting N as a diffusion-suppressive substance so as to produce two peaks in the vicinity of the interface with a gate electrode and at an amorphous/crystal interface which serves as an defect interface generated by the impurity in the pocket region; and by carrying out ion implantations for forming an extension region and deep source and drain regions.
摘要翻译：首先通过注入Sb离子作为形成袋区域的杂质来形成具有延伸结构的杂质扩散层; 然后通过将N作为扩散抑制物质注入，以便在与栅电极的界面附近产生两个峰，以及在作为由口袋区域中的杂质产生的缺陷界面的非晶/晶界面处产生两个峰; 并且通过进行用于形成延伸区域和深源极和漏极区域的离子注入。

34. 发明申请

US20050233558A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050233558A1
公开(公告)日：2005-10-20
申请号：US11155668
申请日：2005-06-20
申请人： Tomonari Yamamoto , Kenichi Okabe
发明人： Tomonari Yamamoto , Kenichi Okabe
IPC分类号： H01L21/28 , H01L29/51 , H01L21/22 , H01L21/38
CPC分类号： H01L21/28202 , H01L21/28176 , H01L29/518
摘要： The depletion of a gate electrode (103) is suppressed in such a way that impurities are introduced into the gate electrode that is formed on a semiconductor substrate (101), with a gate insulating film (102) interposed between the gate electrode (103) and the semiconductor substrate (101), and that, by irradiating a laser beam onto the gate electrode (103), the introduced impurities are made to diffuse up to the interface between the gate electrode (103) and the gate insulating film (102).
摘要翻译：栅极电极（103）的耗尽被抑制为使得杂质被引入到形成在半导体衬底（101）上的栅电极中，栅极绝缘膜（102）介于栅电极（103）之间，和半导体衬底（101），并且通过将激光束照射到栅电极（103）上，引入的杂质扩散到栅电极（103）和栅极绝缘膜（102）之间的界面，。

35. 发明授权

US08084338B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08084338B2
公开(公告)日：2011-12-27
申请号：US11155668
申请日：2005-06-20
申请人： Tomonari Yamamoto , Kenichi Okabe
发明人： Tomonari Yamamoto , Kenichi Okabe
IPC分类号： H01L21/04
CPC分类号： H01L21/28202 , H01L21/28176 , H01L29/518
摘要： The depletion of a gate electrode (103) is suppressed in such a way that impurities are introduced into the gate electrode that is formed on a semiconductor substrate (101), with a gate insulating film (102) interposed between the gate electrode (103) and the semiconductor substrate (101), and that, by irradiating a laser beam onto the gate electrode (103), the introduced impurities are made to diffuse up to the interface between the gate electrode (103) and the gate insulating film (102).
摘要翻译：栅极电极（103）的耗尽被抑制为使得杂质被引入到形成在半导体衬底（101）上的栅电极中，栅极绝缘膜（102）介于栅电极（103）之间，和半导体衬底（101），并且通过将激光束照射到栅电极（103）上，引入的杂质扩散到栅电极（103）和栅极绝缘膜（102）之间的界面，。

36. 发明申请

US20100077791A1 REFRIGERATOR, AND ELECTRIC DEVICE 有权
公开(公告)号：US20100077791A1
公开(公告)日：2010-04-01
申请号：US12604213
申请日：2009-10-22
申请人： Toyoshi Kamisako , Yoshihiro Ueda , Kazuya Nakanishi , Tadashi Adachi , Kazuyuki Hamada , Kiyotaka Tabira , Yasuyuki Okamoto , Kenichi Okabe , Masashi Yuasa , Kenichi Kakita , Kiyoshi Mori , Tosiaki Mamemoto , Katsunori Horii
发明人： Toyoshi Kamisako , Yoshihiro Ueda , Kazuya Nakanishi , Tadashi Adachi , Kazuyuki Hamada , Kiyotaka Tabira , Yasuyuki Okamoto , Kenichi Okabe , Masashi Yuasa , Kenichi Kakita , Kiyoshi Mori , Tosiaki Mamemoto , Katsunori Horii
IPC分类号： F25D17/02 , F25D13/02 , F25B29/00 , F24F7/00
CPC分类号： F25D17/042 , A23L3/3409 , A23L3/363 , F25D2317/0413
摘要： The refrigerator includes a vegetable compartment (107) thermally insulated by a rear partition (111), and a mist generation department (139) for atomizing a mist into the vegetable compartment (107), and the mist generation department (139) includes a atomizing electrode (135) for atomizing the mist into the vegetable compartment (107), a voltage applicator (133) for applying a voltage to the atomizing electrode (135), and a cooling pin (134) coupled to the atomizing electrode (135), in which the atomizing electrode (135) is cooled to a temperature lower than the dew point by a outlet air-duct for freezer compartment (141), and the moisture in the air is cooled to condense dew on the atomizing electrode (135), and is atomized as a mist into the vegetable compartment (107), and dew can be condensed from moisture onto the atomizing electrode (135) stably and in a simple configuration, and the freshness of the food is enhanced while the reliability of the refrigerator is enhanced.

37. 发明申请

US20100077770A1 REFRIGERATOR, AND ELECTRIC DEVICE 审中-公开
公开(公告)号：US20100077770A1
公开(公告)日：2010-04-01
申请号：US12604238
申请日：2009-10-22
申请人： Toyoshi Kamisako , Yoshihiro Ueda , Kazuya Nakanishi , Tadashi Adachi , Kazuyuki Hamada , Kiyotaka Tabira , Yasuyuki Okamoto , Kenichi Okabe , Masashi Yuasa , Kenichi Kakita , Kiyoshi Mori , Tosiaki Mamemoto , Katsunori Horii
发明人： Toyoshi Kamisako , Yoshihiro Ueda , Kazuya Nakanishi , Tadashi Adachi , Kazuyuki Hamada , Kiyotaka Tabira , Yasuyuki Okamoto , Kenichi Okabe , Masashi Yuasa , Kenichi Kakita , Kiyoshi Mori , Tosiaki Mamemoto , Katsunori Horii
IPC分类号： F25B21/02 , F25D17/02 , F25D13/02 , F25D17/04 , F25D21/08
CPC分类号： F25D17/042 , A23L3/3409 , A23L3/363 , F25D2317/0413
摘要： The refrigerator includes a vegetable compartment (107) thermally insulated by a rear partition (111), and a mist generation department (139) for atomizing a mist into the vegetable compartment (107), and the mist generation department (139) includes a atomizing electrode (135) for atomizing the mist into the vegetable compartment (107), a voltage applicator (133) for applying a voltage to the atomizing electrode (135), and a cooling pin (134) coupled to the atomizing electrode (135), in which the atomizing electrode (135) is cooled to a temperature lower than the dew point by a outlet air-duct for freezer compartment (141), and the moisture in the air is cooled to condense dew on the atomizing electrode (135), and is atomized as a mist into the vegetable compartment (107), and dew can be condensed from moisture onto the atomizing electrode (135) stably and in a simple configuration, and the freshness of the food is enhanced while the reliability of the refrigerator is enhanced.

38. 发明授权

US07453800B2 Communications apparatus and congestion control method 有权
标题翻译：通信装置和拥塞控制方法
公开(公告)号：US07453800B2
公开(公告)日：2008-11-18
申请号：US10020077
申请日：2001-10-30
申请人： Ryo Takajitsuko , Kenichi Okabe , Shiro Uriu , Hiroya Kawasaki
发明人： Ryo Takajitsuko , Kenichi Okabe , Shiro Uriu , Hiroya Kawasaki
IPC分类号： H04L12/56
CPC分类号： H04L49/3081 , H04L49/1523 , H04L49/30 , H04L49/506 , H04L2012/5635
摘要： A communications apparatus for switching among different interfaces includes a switch unit. The switch unit includes a main switch for switching data of a fixed length and an interface having a first buffer for an input of the main switch and a second buffer for an output of the main switch.
摘要翻译：用于在不同接口之间切换的通信装置包括开关单元。开关单元包括用于切换固定长度的数据的主开关和具有用于主开关的输入的第一缓冲器和用于主开关的输出的第二缓冲器的接口。

39. 发明申请

US20070232039A1 Semiconductor device having shallow B-doped region and its manufacture 有权
标题翻译：具有浅B掺杂区域的半导体器件及其制造
公开(公告)号：US20070232039A1
公开(公告)日：2007-10-04
申请号：US11607927
申请日：2006-12-04
申请人： Tomohiro Kubo , Kenichi Okabe , Tomonari Yamamoto
发明人： Tomohiro Kubo , Kenichi Okabe , Tomonari Yamamoto
IPC分类号： H01L21/425
CPC分类号： H01L21/823807 , H01L21/823814
摘要： A method for manufacturing a semiconductor device has the steps of: (a) implanting boron (B) ions into a semiconductor substrate; (b) implanting fluorine (F) or nitrogen (N) ions into the semiconductor device; (c) after the steps (a) and (b) are performed, executing first annealing with a heating time of 100 msec or shorter relative to a region of the semiconductor substrate into which ions were implanted; and (d) after the step (c) is performed, executing second annealing with a heating time longer than the heating time of the first annealing, relative to the region of the semiconductor substrate into which ions were implanted. The method for manufacturing a semiconductor device is provided which can dope boron (B) shallowly and at a high concentration.
摘要翻译：制造半导体器件的方法具有以下步骤：（a）将硼（B）离子注入到半导体衬底中; （b）将氟（F）或氮（N）离子注入到半导体器件中; （c）在执行步骤（a）和（b）之后，相对于其中注入离子的半导体衬底的区域，以100msec或更短的加热时间执行第一退火; 和（d）在执行步骤（c）之后，相对于其中注入离子的半导体衬底的区域，以比第一退火的加热时间长的加热时间执行第二退火。提供半导体器件的制造方法，其能够以高浓度浓缩硼（B）。

40. 发明申请

US20050236667A1 Manufacture of semiconductor device with selective amorphousizing 审中-公开
标题翻译：具有选择性非晶化的半导体器件的制造
公开(公告)号：US20050236667A1
公开(公告)日：2005-10-27
申请号：US11169666
申请日：2005-06-30
申请人： Kenichi Goto , Hiroshi Morioka , Manabu Kojima , Kenichi Okabe
发明人： Kenichi Goto , Hiroshi Morioka , Manabu Kojima , Kenichi Okabe
IPC分类号： H01L21/265 , H01L21/28 , H01L21/336 , H01L21/8238 , H01L29/78 , H01L29/45
CPC分类号： H01L21/26506 , H01L21/28035 , H01L21/823814 , H01L21/823842 , H01L29/6659 , H01L29/7833
摘要： A p-channel MOS transistor capable of lowering the height of a gate electrode, suppressing penetration of boron through a gate insulating film, and reducing a source/drain parasitic capacitance. A method for manufacturing a semiconductor device comprises the steps of: (a) forming a gate insulating film on each surface of active regions including an n-type active region; (b) depositing a poly-Si gate electrode layer on the gate insulating film; (c) implanting amorphousizing ions, Ge or Si, to transform an upper portion of the gate electrode layer into amorphous phase; (d) patterning the gate electrode layer to form a gate electrode; (e) forming side wall spacers on side walls of the gate electrode at a temperature not crystallizing the amorphous layer; and (f) implanting p-type impurity ions, B, into the n-type active region by using as a mask the gate electrode and the side wall spacers, to form high concentration source/drain regions.
摘要翻译：能够降低栅电极的高度的p沟道MOS晶体管，抑制硼穿过栅极绝缘膜的渗透，并降低源/漏寄生电容。一种制造半导体器件的方法包括以下步骤：（a）在包括n型有源区的有源区的每个表面上形成栅极绝缘膜; （b）在栅极绝缘膜上沉积多晶硅栅电极层; （c）注入非晶化离子Ge或Si，以将栅电极层的上部转变成非晶相; （d）图案化栅电极层以形成栅电极; （e）在不使非晶层结晶的温度下，在栅电极的侧壁上形成侧壁间隔物; 和（f）通过使用栅电极和侧壁间隔物作为掩模将p型杂质离子B注入到n型有源区中，以形成高浓度源/漏区。

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