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    • 4. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07883960B2
    • 2011-02-08
    • US12409979
    • 2009-03-24
    • Masatoshi FukudaAkiyoshi HatadaKatsuaki OokoshiKenichi OkabeTomonari Yamamoto
    • Masatoshi FukudaAkiyoshi HatadaKatsuaki OokoshiKenichi OkabeTomonari Yamamoto
    • H01L21/8234H01L21/8244H01L21/8242H01L21/336
    • H01L27/0629
    • A method of manufacturing a semiconductor device includes forming a conductive layer over a semiconductor substrate, selectively removing the conductive layer for forming a resistance element and a gate electrode, forming sidewall spacers over sidewalls of the remaining conductive layer, forming a first insulating film containing a nitrogen over the semiconductor substrate having the sidewall spacers, implanting ions in the semiconductor substrate through the first insulating film, forming a second insulating film containing a nitrogen over the first insulating film after implanting ions in the semiconductor substrate through the first insulating film, and selectively removing the first and the second insulating film such that at least a part of the first and the second insulating films is remained over the semiconductor substrate and over the conductive layer.
    • 一种制造半导体器件的方法包括在半导体衬底上形成导电层,选择性地去除用于形成电阻元件和栅电极的导电层,在剩余导电层的侧壁上形成侧壁间隔物,形成第一绝缘膜, 在具有侧壁间隔物的半导体衬底上的氮气,通过第一绝缘膜在半导体衬底中注入离子,在通过第一绝缘膜植入离子到半导体衬底中之后,在第一绝缘膜上形成含有氮的第二绝缘膜,并且选择性地 去除第一和第二绝缘膜,使得第一和第二绝缘膜的至少一部分保留在半导体衬底上并在导电层上方。