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31. 发明授权

US06306190B1 Secondary air supply device 有权
标题翻译：二次供气装置
公开(公告)号：US06306190B1
公开(公告)日：2001-10-23
申请号：US09392296
申请日：1999-09-08
申请人： Yuichiro Tsuruta , Nobuhiro Kasai , Masayoshi Kobayashi
发明人： Yuichiro Tsuruta , Nobuhiro Kasai , Masayoshi Kobayashi
IPC分类号： B01D5000
CPC分类号： B01D46/0023 , B01D46/008 , B01D46/2403 , B01D2279/60 , F02B61/02 , F02M35/024 , F02M35/10222 , F02M35/162 , Y10S55/28
摘要： An air cleaning system for an engine includes a main air cleaner for supplying cleaned air to an intake system of the engine and a sub-air cleaner for supplying cleaned air to an exhaust system of the engine. The main air cleaner includes a main air cleaner housing divided into a dirty air chamber and a clean air chamber by a first air cleaning element. The sub-air cleaner is disposed in the dirty air chamber, and has its own second air cleaning element, physically separated from the first air cleaning element.
摘要翻译：用于发动机的空气净化系统包括用于将净化空气供给到发动机的进气系统的主空气净化器和用于将净化空气供给到发动机的排气系统的副空气净化器。主空气净化器包括通过第一空气净化元件分成脏空气室和清洁空气室的主空气净化器壳体。副空气净化器设置在脏空气室中，并且具有其自身与第一空气净化元件物理分离的第二空气净化元件。

32. 发明授权

US5853079A Chip feed apparatus and chip feed casing therefor 失效
标题翻译：芯片进给装置和芯片进给套管
公开(公告)号：US5853079A
公开(公告)日：1998-12-29
申请号：US599048
申请日：1996-02-09
申请人： Tsuyoshi Ito , Tetsuro Ito , Masayoshi Kobayashi
发明人： Tsuyoshi Ito , Tetsuro Ito , Masayoshi Kobayashi
IPC分类号： H05K13/00 , H05K13/02 , B65G47/14
CPC分类号： H05K13/028 , H05K13/0084
摘要： A chip feed apparatus capable of permitting a chip feed casing to be used for storage and transportation of chips in a distribution channel as well and preventing a weight of chips from being applied to a chip storage space of a hopper, resulting in positive separation and feeding of chips by the hopper. The chip feed apparatus includes a chip feed casing formed on a side surface thereof with a chip outlet, a hopper formed on a side surface thereof with a chip inlet and connected to the chip feed casing while enabling vertical movement of the hopper, a chip separating and aligning pipe inserted into a hole communicating with the chip storage space, and a chip feed path of which one end communicates with the chip separating and aligning pipe and the other end is defined at a chip pick-up position. The chip outlet of the chip feed casing is open at a lowermost end of a chip receiving space or below the lowermost end. The side surface of the chip feed casing and the side surface of the hopper are connected to each other while the chip outlet and chip inlet are kept aligned with each other.
摘要翻译：一种能够允许芯片供给壳体用于在分配通道中存储和运输芯片的芯片进给装置，并且防止芯片的重量被施加到料斗的芯片存储空间，导致正分离和进给的碎片由料斗。所述切屑进给装置包括在其侧面形成有切屑出口的切屑进给壳体，在其侧面形成有料斗入口并与所述切屑进给壳体连接并且能够使所述料斗垂直移动的料斗，并且插入到与芯片存储空间连通的孔中的对准管，以及与芯片分离对准管和另一端连通的一端的芯片供给路径被限定在芯片拾取位置。芯片进给壳体的芯片出口在芯片容纳空间的最下端或最下端开口。芯片供给壳体的侧面和料斗的侧面彼此连接，同时芯片出口和芯片入口保持彼此对准。

33. 发明授权

US5739970A Magnetic tape unit 失效
公开(公告)号：US5739970A
公开(公告)日：1998-04-14
申请号：US503200
申请日：1995-07-17
申请人： Masayoshi Kobayashi , Keisuke Hoshino , Masaru Ohshita , Akira Takano , Makoto Sasaki , Makoto Matsuda , Toshihiko Fujii
发明人： Masayoshi Kobayashi , Keisuke Hoshino , Masaru Ohshita , Akira Takano , Makoto Sasaki , Makoto Matsuda , Toshihiko Fujii
IPC分类号： G11B15/20 , G11B15/48 , G11B15/62 , G11B15/67 , G11B33/14 , G11B15/18 , G11B15/43
CPC分类号： G11B15/48 , G11B15/20 , G11B15/62 , G11B15/67 , G11B33/144
摘要： Disclosed herein is a magnetic tape unit having a magnetic head for reading and writing data from and onto a magnetic tape. The magnetic tape is traveled in contact with the magnetic head during a read/write operation of the magnetic head. During a rest period where the read/write operation of the magnetic head is not performed, a reciprocating motion of the magnetic tape by a small distance is performed with a predetermined period. A temperature in the vicinity of the magnetic head is detected by a temperature sensor. The predetermined period is changed according to the temperature detected by the temperature sensor. Accordingly, the adhesion of the magnetic tape to the magnetic head can be well prevented irrespective of the temperature inside the tape unit.

34. 发明授权

US5373191A Semiconductor device and method of producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5373191A
公开(公告)日：1994-12-13
申请号：US998856
申请日：1992-12-30
申请人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
发明人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
IPC分类号： H01L21/285 , H01L21/331 , H01L21/335 , H01L21/337 , H01L21/338 , H01L21/60 , H01L21/8252 , H01L23/485 , H01L29/812 , H01L29/80 , H01L23/48 , H01L29/06 , H01L29/48
CPC分类号： H01L21/76897 , H01L21/28587 , H01L21/8252 , H01L23/485 , H01L29/66318 , H01L29/66462 , H01L29/66863 , H01L29/66871 , H01L29/66924 , H01L29/8128 , H01L2924/0002
摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.
摘要翻译：具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容并且有利地增加源极栅极击穿电压。上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

35. 发明授权

US5181087A Semiconductor device and method of producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5181087A
公开(公告)日：1993-01-19
申请号：US340471
申请日：1989-04-19
申请人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
发明人： Toshiyuki Usagawa , Yoshinori Imamura , Hidekazu Okuhira , Shigeo Goto , Masayoshi Kobayashi , Shinichiro Takatani
IPC分类号： H01L21/285 , H01L21/331 , H01L21/335 , H01L21/337 , H01L21/338 , H01L21/60 , H01L21/8252 , H01L23/485 , H01L29/812
CPC分类号： H01L21/76897 , H01L21/28587 , H01L21/8252 , H01L23/485 , H01L29/66318 , H01L29/66462 , H01L29/66863 , H01L29/66871 , H01L29/66924 , H01L29/8128 , H01L2924/0002
摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.
摘要翻译：具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容并且有利地增加源极栅极击穿电压。上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

36. 发明授权

US4397284A Distribution type fuel injection pump 失效
标题翻译：分配式燃油喷射泵
公开(公告)号：US4397284A
公开(公告)日：1983-08-09
申请号：US221928
申请日：1981-12-31
申请人： Nobuhiro Kaibara , Masayoshi Kobayashi
发明人： Nobuhiro Kaibara , Masayoshi Kobayashi
IPC分类号： F02M41/12 , F02M59/20
CPC分类号： F02M41/128 , F02M41/123
摘要： A distribution type fuel injection pump for use in a fuel injection combustion engine comprising a plunger capable of moving reciprocally along its axis and simultaneously rotating about its axis and a couple of members forming a cam mechanism having a first cam member and a second cam member. The first cam member is mounted on the plunger and the second cam member is mounted on a housing rotatably about its axis. The couple of cam members cause the plunger to reciprocally move while the plunger is rotating. The angular position of the second cam member about its axis can be controlled by a fuel injection timing control means in accordance with the engine speed. The second cam member can also turn about its axis so as to be adjusted in its angular position by a fuel injection timing adjustment when a selected operating condition of the engine, for example the engine start, is carried out.
摘要翻译：一种用于燃料喷射内燃机的分配式燃料喷射泵，包括一个能够沿其轴线往复运动并同时围绕其轴线旋转的柱塞，以及一对构成具有第一凸轮构件和第二凸轮构件的凸轮机构的构件。第一凸轮构件安装在柱塞上，并且第二凸轮构件围绕其轴线可旋转地安装在壳体上。凸轮构件的一对使柱塞在柱塞旋转时往复移动。第二凸轮构件围绕其轴线的角度位置可以根据发动机转速由燃料喷射正时控制装置控制。第二凸轮构件也可以围绕其轴线转动，以便当执行发动机的选定操作条件（例如发动机起动）时，通过燃料喷射正时调节将其调节到其角位置。

37. 发明授权

US4327696A Fuel injection pump for internal combustion engines 失效
标题翻译：内燃机燃油喷射泵
公开(公告)号：US4327696A
公开(公告)日：1982-05-04
申请号：US151905
申请日：1980-05-21
申请人： Masayoshi Kobayashi , Toru Sakuranaka , Keiichi Yamada
发明人： Masayoshi Kobayashi , Toru Sakuranaka , Keiichi Yamada
IPC分类号： F02M41/12 , F02M59/44 , F02M39/00 , F02M37/04 , F02M41/08
CPC分类号： F02M41/125 , F02M59/447
摘要： A fuel injection pump in which a relief channel is formed which communicates with the pump working chamber and is arranged to be blocked by a valve means, associated with a valve actuating means responsive to a pressure varying with engine r.p.m., during starting of the engine so that the fuel injection quantity is increased. Thus, improved starting characteristics of the engine can be obtained. Said relief channel may comprise a first channel communicating with the pump working chamber, and a second relief channel which has a portion thereof extending in the pump plunger to terminate in an outer periphery of the bottom end of said plunger and is so disposed as to communicate with the pump suction chamber after a predetermined delivery stroke length or prestroke has been executed. Communication between said first and second relief channels is adapted to be interrupted by said valve means at less than a predetermined engine r.p.m. As another advantagenous arrangement, the relief channel may comprise a first relief channel which consists of a port having one end communicating with the pump working chamber and the other end terminating in an outer periphery of the plunger and a communication channel having one end terminating in an inner periphery of the plunger barrel and the other end arranged for communication with a lower pressure zone, and a second relief channel allowing a restricted flow rate and communicating with the pump working chamber. The port and communication channel of said first relief channel are so disposed as to communicate with each other at the beginning of the delivery stroke of the plunger. Said first and second relief channels are arranged to be simultaneously blocked by said valve means during starting of the engine.
摘要翻译：一种燃料喷射泵，其中形成有与泵工作室连通的排泄通道，并且在发动机启动期间被布置成被阀装置阻塞，该阀装置响应于随着发动机转速而变化的压力而与阀致动装置相关联燃料喷射量增加。因此，可以获得发动机的起动特性的改善。所述释放通道可以包括与泵工作室连通的第一通道，以及第二释放通道，其具有在泵柱塞中延伸的部分，以终止于所述柱塞的底端的外周，并且被设置为连通在预定的输送行程长度或前冲程已经执行之后，泵吸入室。所述第一和第二释放通道之间的通信适于在小于预定发动机r.p.m的情况下被所述阀装置中断。作为另一个有利的布置，排泄通道可以包括第一释放通道，该第一释放通道由具有一端与泵工作室连通的端口和终止于柱塞的外周边的另一端组成的端口和具有一端终止于柱塞筒的内周，另一端设置成与较低压力区相连通，第二泄压通道允许有限流量并与泵工作室连通。所述第一释放通道的端口和连通通道被布置为在柱塞的输送冲程开始时彼此连通。所述第一和第二释放通道布置成在发动机启动期间同时被所述阀装置阻挡。

38. 发明授权

US4187109A Strontium barium niobate single crystal doped with Ce 失效
标题翻译：铈铌酸锶单晶掺杂Ce
公开(公告)号：US4187109A
公开(公告)日：1980-02-05
申请号：US652174
申请日：1976-01-26
申请人： Koichi Megumi , Hirotsugu Kozuka , Masayoshi Kobayashi , Yoshio Furuhata
发明人： Koichi Megumi , Hirotsugu Kozuka , Masayoshi Kobayashi , Yoshio Furuhata
IPC分类号： G11C11/42 , C09K3/00 , G02F1/03 , G02F1/05 , G03C1/725 , G03H1/00 , G11C13/04 , H01B3/12 , G03C1/76 , G03C1/00
CPC分类号： G03C1/725 , G02F1/0541 , G11C13/048
摘要： An optical element is composed of a single crystal of strontium barium niobate doped with a transition metal element such as cerium, vanadium or uranium. This element has the property of undergoing very sensitively a change in its refractive index by the application of a beam of light of specific wavelength.
摘要翻译：光学元件由掺杂有过渡金属元素如铈，钒或铀的铌酸钡锶单晶构成。该元件具有通过施加特定波长的光束而非常敏感地折射率变化的性质。

39. 发明授权

US4176325A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4176325A
公开(公告)日：1979-11-27
申请号：US843365
申请日：1977-10-19
申请人： Takashi Kajimura , Kazutoshi Saito , Noriyuki Shige , Michiharu Nakamura , Jun-ichi Umeda , Masayoshi Kobayashi
发明人： Takashi Kajimura , Kazutoshi Saito , Noriyuki Shige , Michiharu Nakamura , Jun-ichi Umeda , Masayoshi Kobayashi
IPC分类号： H01S5/227 , H01S3/19
CPC分类号： H01S5/227 , H01S5/2275
摘要： A semiconductor laser device capable of emitting highly collimated beams, especially of a narrow beam divergence, is disclosed. A striped hetero-junction is formed on a predetermined semiconductor substrate by a first semiconductor layer (refractive index: n.sub.1, band gap: Eg.sub.1, thickness: d), a second semiconductor layer (n.sub.2) and a third semiconductor layer (n.sub.3), and the hetero-junction is sandwiched between portions of a fourth semiconductor layer (n.sub.4, Eg.sub.4) into a buried structure. At this time, the various materials are selected to follow the relations of d.ltoreq..lambda. (where .lambda. denotes the oscillation wavelength of the semiconductor laser), n.sub.2, n.sub.3
摘要翻译：公开了能够发射高度准直的光束，特别是窄的光束发散的半导体激光器件。通过第一半导体层（折射率：n1，带隙：Eg1，厚度：d），第二半导体层（n2）和第三半导体层（n3）在预定的半导体衬底上形成条纹异质结，以及异质结被夹在第四半导体层（n4，Eg4）的一部分成埋入结构。此时，选择各种材料以遵循dλ/λ（其中λ表示半导体激光器的振荡波长），n2，n3

40. 发明授权

US3989021A Dash pot arrangement for distribution type fuel injection pump cut off barrel 失效
标题翻译：配置式燃油喷射泵的冲洗罐布置切断桶
公开(公告)号：US3989021A
公开(公告)日：1976-11-02
申请号：US561530
申请日：1975-03-24
申请人： Masayoshi Kobayashi , Yasutaka Yuzawa
发明人： Masayoshi Kobayashi , Yasutaka Yuzawa
IPC分类号： F02M41/12 , F04B49/00 , F02M39/00
CPC分类号： F02M41/126
摘要： In one form of the invention, a rotatable and axially slidable plunger mounted within a fixed cylindrical plunger barrel forms with the barrel the casing bore and a spring biased electromagnetically driven axially slidable cut off sleeve, a dash pot chamber including a narrow radial gap between the cut off barrel and the pump casing body. The high pressure cut-off fuel may be directed to the chamber. Alternatively, the cut-off fuel may be directed to impact a deflector to produce an axial force modulating axial shift of the sleeve.
摘要翻译：在本发明的一种形式中，安装在固定圆柱形柱塞筒内的可旋转并可轴向滑动的柱塞与筒体形成套筒孔和弹簧偏置电磁驱动的轴向可滑动切断套筒，仪表板室包括位于切断桶体和泵壳体。高压截止燃料可以被引导到腔室。或者，截止燃料可以被引导以撞击偏转器以产生调节套筒的轴向力的轴向力。

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