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31. 发明申请

US20120064438A1 PHOTOMASK BLANK AND MAKING METHOD, PHOTOMASK, LIGHT PATTERN EXPOSURE METHOD, AND DESIGN METHOD OF TRANSITION METAL/SILICON BASE MATERIAL FILM 有权
标题翻译：光电薄膜和制作方法，光电子图案，光图案曝光方法，以及过渡金属/硅基材料薄膜的设计方法
公开(公告)号：US20120064438A1
公开(公告)日：2012-03-15
申请号：US13228501
申请日：2011-09-09
申请人： Hiroki YOSHIKAWA , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
发明人： Hiroki YOSHIKAWA , Yukio Inazuki , Ryuji Koitabashi , Hideo Kaneko , Takashi Haraguchi , Yosuke Kojima , Tomohito Hirose
IPC分类号： G03F7/20 , H01L21/31 , G03F1/00
CPC分类号： G03F1/72 , G03F1/32 , G03F1/48 , G03F1/50
摘要： A photomask blank has a film of a transition metal/silicon base material comprising a transition metal, silicon, oxygen and nitrogen, having an oxygen content of at least 3 atom %, and satisfying the formula: 4×CSi/100−6×CM/100>1 wherein CSi is a silicon content in atom % and CM is a transition metal content in atom %.
摘要翻译：光掩模坯料具有包含氧含量为至少3原子％的过渡金属，硅，氧和氮的过渡金属/硅基材的膜，并且满足下式：4×CSi / 100-6×CM 其中CSi是原子％的硅含量，CM是原子％的过渡金属含量。

32. 发明申请

US20100248091A1 METHOD FOR INSPECTING PHOTOMASK BLANK OR INTERMEDIATE THEREOF, METHOD FOR DETERMINING DOSAGE OF HIGH-ENERGY RADIATION, AND METHOD FOR MANUFACTURING PHOTOMASK BLANK 有权
标题翻译：用于检查光电隔离膜或其中间体的方法，用于确定高能量辐射剂量的方法，以及制造光电离空白的方法
公开(公告)号：US20100248091A1
公开(公告)日：2010-09-30
申请号：US12750121
申请日：2010-03-30
申请人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio INAZUKI , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G03F1/00 , G01B11/24
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank which is manufactured by depositing a phase shift film on a substrate and irradiating the phase shift film with high-energy radiation to effect substrate shape adjusting treatment is inspected by measuring a surface topography of the photomask blank after the substrate shape adjusting treatment, removing the phase shift film from the photomask blank, measuring a surface topography of the treated substrate after removal of the phase shift film, and comparing the surface topographies, thereby evaluating a warpage change before and after removal of the phase shift film, due to a stress of the phase shift film having undergone substrate shape adjusting treatment.
摘要翻译：通过在基板形状调整处理之后测量光掩模坯料的表面形貌来检查通过在基板上沉积相变膜并用高能辐射照射相移膜来进行基板形状调整处理而制造的光掩模坯料，从光掩模坯料中去除相移膜，在移除相移膜之后测量处理过的基板的表面形貌，并比较表面形貌，由此评估在移相膜之前和之后的翘曲变化，由于经过衬底形状调整处理的相移膜的应力。

33. 发明授权

US06666957B2 Magnetron sputtering system and photomask blank production method based on the same 有权
公开(公告)号：US06666957B2
公开(公告)日：2003-12-23
申请号：US10036685
申请日：2001-12-21
申请人： Masataka Watanabe , Satoshi Okazaki , Hideo Kaneko , Ken Ohashi , Hideki Kobayashi
发明人： Masataka Watanabe , Satoshi Okazaki , Hideo Kaneko , Ken Ohashi , Hideki Kobayashi
IPC分类号： C23C1435
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： The present invention provides a magnetron sputtering system, which ensures a formation of a desired thin film, using a thick target. In the sputtering process, a portion of the target does not have erosion free portions. The present invention provides a magnetron sputtering system comprising a chamber for sputtering, a target electrode 5 installed inside said chamber, a substrate electrode 6 installed in the chamber opposite to the target electrode, a ring-shaped magnet 2 installed so as to enclose the side surface of the target electrode, and a semi-circular disk shaped magnet installed opposite to the target-mounted surface of the target electrode, wherein the semi-circular disk shaped magnet is rotated in the circumferential direction of the target electrode and is magnetized in the direction perpendicular to the target electrode. This ensures a specific magnetic field component to be generated over the thick planar target surface 3.

34. 发明授权

US08647795B2 Sputtering target material, silicon-containing film forming method, and photomask blank 有权
标题翻译：溅射靶材料，含硅膜形成方法和光掩模坯料
公开(公告)号：US08647795B2
公开(公告)日：2014-02-11
申请号：US13273656
申请日：2011-10-14
申请人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
发明人： Hideo Kaneko , Yokio Inazuki , Hiroki Yoshikawa
IPC分类号： G03F1/60 , C23C14/00
CPC分类号： C23C14/3414 , C23C14/0036 , C23C14/0676 , C23C14/564 , G03F1/54
摘要： Provided is a silicon target material in which particles are not easily generated during a sputtering process and to form a low-defect (high quality) silicon-containing film. A silicon target material having a specific resistance of 20 Ω·cm or more at room temperature is used for forming a silicon-containing film. The silicon target material may be polycrystalline or noncrystalline. However, when the silicon target material is single-crystalline, a more stable discharge state can be obtained. Also, a single-crystal silicon in which crystals are grown by an FZ method is a preferable material as a highly-pure silicon target material because its content of oxygen is low. Further, a target material having n-type conductivity and containing donor impurities is preferable to obtain stable discharge characteristics. Only a single or a plurality of silicon target materials according to the present invention may be used for sputtering film formation of the silicon-containing film.
摘要翻译：提供了一种硅靶材料，其中在溅射工艺期间不容易产生颗粒并形成低缺陷（高质量）含硅膜。使用在室温下电阻率为20Ω·cm以上的硅靶材料来形成含硅膜。硅靶材料可以是多晶的或非晶的。然而，当硅靶材料是单晶时，可以获得更稳定的放电状态。此外，由于其含氧量低，因此通过FZ法生长晶体的单晶硅是优选的高纯度硅靶材料。此外，优选具有n型导电性且含有供体杂质的靶材料，以获得稳定的放电特性。根据本发明，只有一种或多种硅靶材料可用于溅射含硅膜的成膜。

35. 发明申请

US20050260505A1 Preparation of photomask blank and photomask 有权
标题翻译：光掩模坯料和光掩模的制备
公开(公告)号：US20050260505A1
公开(公告)日：2005-11-24
申请号：US11130278
申请日：2005-05-17
申请人： Noriyasu Fukushima , Hiroki Yoshikawa , Hideo Kaneko
发明人： Noriyasu Fukushima , Hiroki Yoshikawa , Hideo Kaneko
IPC分类号： C23C14/00 , C23C14/06 , C25B9/00 , C25B11/00 , C25B13/00 , G03C5/00 , G03F1/32 , G03F1/54 , G03F1/68 , G03F9/00 , H01L21/027
CPC分类号： G03F1/32 , C23C14/0676
摘要： A photomask blank is prepared by forming a light-absorbing film on a transparent substrate, and irradiating the light-absorbing film with light from a flash lamp at an energy density of 3 to 40 J/cm2. A photomask is prepared by forming a resist pattern on the photomask blank by photolithography, etching away those portions of the light-absorbing film which are not covered with the resist pattern, and removing the resist.
摘要翻译：通过在透明基板上形成光吸收膜，并以3〜40J / cm 2的能量密度从闪光灯照射光吸收膜来制备光掩模坯料。通过光刻法在光掩模坯料上形成抗蚀剂图案，蚀刻除了未被抗蚀剂图案覆盖的光吸收膜的那些部分，并除去抗蚀剂来制备光掩模。

36. 发明授权

US5743323A Apparatus for continuous casting 失效
标题翻译：连铸设备
公开(公告)号：US5743323A
公开(公告)日：1998-04-28
申请号：US231667
申请日：1994-04-25
申请人： Haruo Ohguro , Toshihiro Kosuge , Katsuhiko Kawamoto , Ryuuzou Hanzawa , Shogo Matsumura , Hiroyuki Kawai , Hiroyuki Nakashima , Yukio Morimoto , Youji Ao , Tsutomu Fujii , Hideo Kaneko , Hatsuyoshi Kumashiro
发明人： Haruo Ohguro , Toshihiro Kosuge , Katsuhiko Kawamoto , Ryuuzou Hanzawa , Shogo Matsumura , Hiroyuki Kawai , Hiroyuki Nakashima , Yukio Morimoto , Youji Ao , Tsutomu Fujii , Hideo Kaneko , Hatsuyoshi Kumashiro
IPC分类号： B22D11/04 , B22D11/045 , B22D11/047 , B22D11/10
CPC分类号： B22D11/047 , B22D11/045
摘要： A continuous casting apparatus comprises continuously supplying molten metal from a tundish to a cooled mold having an inlet and an outlet at least through a break ring, forming a cast section by continuously cooling the molten metal in the mold and starting the solidification of the molten metal below its surface, and intermittently withdrawing the cast section with respect to the mold through its outlet. During continuous casting, a sealing gas having a pressure higher than atmospheric and being soluble in the molten metal is invariable supplied to the entirety of the contact area of the mold and the break ring.
摘要翻译：连续铸造设备包括将中间包中的熔融金属连续地供给至少通过断环的入口和出口的冷却模具，通过连续冷却模具中的熔融金属并开始熔融金属的固化形成铸造部分在其表面下方，并通过其出口间歇性地将铸造部分相对于模具取出。在连续铸造期间，不断地将压力高于大气压并且可溶于熔融金属的密封气体提供给模具和断环的整个接触区域。

37. 发明授权

US5720861A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5720861A
公开(公告)日：1998-02-24
申请号：US516046
申请日：1995-08-17
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
IPC分类号： G11B5/73 , G11B5/851 , C23C14/34
CPC分类号： G11B5/7315 , G11B5/851
摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium comprising a non-magnetic substrate plate of silicon and a magnetic recording layer formed on the substrate surface by the method of bias-sputtering, by which the magnetic recording layer can be imparted with an unexpectedly large coercive force. The improvement can be accomplished by the use of a silicon substrate plate which has a volume resistivity not exceeding 2 ohm-cm at room temperature. The improvement is more remarkable when the contact resistance between the silicon substrate plate and the substrate holder is kept not to exceed 10 kohm during the bias-sputtering for the formation of the magnetic recording layer on the substrate surface.
摘要翻译：在通过偏置溅射的方法制备磁记录介质的方法中提出了一种磁记录介质的方法，所述磁记录介质包括硅非磁性基板和形成在基板表面上的磁记录层，通过该方法磁记录层可以赋予了意想不到的大矫顽力。可以通过使用在室温下体积电阻率不超过2欧姆 - 厘米的硅衬底板来实现改进。当在衬底表面上形成磁记录层的偏压溅射期间，当硅衬底板和衬底保持器之间的接触电阻保持不超过10Kohm时，这种改进是更显着的。

38. 发明授权

US5335715A Method and apparatus for continuous casting 失效
标题翻译：连铸方法及装置
公开(公告)号：US5335715A
公开(公告)日：1994-08-09
申请号：US742422
申请日：1991-08-08
申请人： Haruo Ohguro , Toshihiro Kosuge , Ryuuzou Hanzawa , Shogo Matsumura , Hiroyuki Kawai , Youji Ao , Tsutomu Fujii , Hideo Kaneko , Hatsuyoshi Kumashiro
发明人： Haruo Ohguro , Toshihiro Kosuge , Ryuuzou Hanzawa , Shogo Matsumura , Hiroyuki Kawai , Youji Ao , Tsutomu Fujii , Hideo Kaneko , Hatsuyoshi Kumashiro
IPC分类号： B22D11/04 , B22D11/045 , B22D11/047 , B22D11/00
CPC分类号： B22D11/047 , B22D11/045
摘要： A continuous cast method comprises continuously supplying molten metal from a tundish through a break ring to a cooled mold having an inlet and an outlet. A cast section is formed by continuously cooling the molten metal in the mold and starting the solidification of the molten metal below its surface and intermittently withdrawing the cast section with respect to the mold through its outlet. During continuous casting, a sealing gas having a pressure higher than atmospheric and soluble in the molten metal is constantly supplied to the entirety of the contact area of the mold and the break ring.
摘要翻译：连续铸造方法包括将熔融金属从中间包通过断裂环连续供应到具有入口和出口的冷却模具。通过连续冷却模具中的熔融金属并使熔融金属在其表面下方的凝固开始并且通过其出口相对于模具间歇地取出铸造部分而形成铸造部分。在连续铸造期间，不断地向模具和断环的接触区域的整体提供具有高于大气压并且可溶于熔融金属的压力的密封气体。

39. 发明授权

US4495982A Horizontal continuous casting method 失效
标题翻译：卧式连铸法
公开(公告)号：US4495982A
公开(公告)日：1985-01-29
申请号：US441704
申请日：1982-11-15
申请人： Hideo Kaneko , Hatuyoshi Kumashiro , Akira Iwata
发明人： Hideo Kaneko , Hatuyoshi Kumashiro , Akira Iwata
IPC分类号： B22D11/10 , B22D11/047 , B22D11/115 , B22D11/16
CPC分类号： B22D11/115 , B22D11/047
摘要： A horizontal continuous casting method for continuously feeding a molten metal stored in a tundish through a tundish nozzle located in the vicinity of the tundish at its bottom to a mold horizontally connected to the tundish nozzle to produce a strand, wherein an electromagnetic field generating device is arranged in the vicinity of the boundary between the tundish nozzle and the mold for exerting an electromagnetic force directed toward a center of the molten metal flowing through the vicinity of the boundary or in a strand withdrawing direction, to separate the molten metal from the inner surface of the tundish mozzle anterior to the boundary with respect to the strand withdrawing direction, to allow the molten metal to come into contact with the inner surface of the mold posterior to the boundary with respect to the strand withdrawing direction. Control of the electromagnetic force exerted on the molten metal is effected by the electromagnetic field generating device arranged in the vicinity of the boundary in such a manner that a point at which the molten metal begins to come into contact with the inner surface of the mold coincides with a predetermined point. The electromagnetic force may also be controlled in such a manner that the points at which the molten metal begins to come into contact with the inner surface of the mold are brought to the same position peripherally of the molten metal with respect to the axis thereof.
摘要翻译：一种水平连续铸造方法，用于通过位于中间包底部附近的中间包喷嘴将存储在中间包中的熔融金属连续地供给到与中间包喷嘴水平连接的模具以产生绞合线，其中电磁场产生装置是布置在中间包喷嘴和模具之间的边界附近，用于施加指向流经边界附近或以线材退出方向的熔融金属的中心的电磁力，以将熔融金属与内表面分离的中间包堰相对于股线退出方向在边界之前，允许熔融金属相对于股线退出方向与边界的后表面接触。施加在熔融金属上的电磁力的控制是通过布置在边界附近的电磁场产生装置以熔融金属开始与模具内表面接触的点重合的方式实现的具有预定点。电磁力也可以以使熔融金属开始与模具的内表面接触的点相对于其熔融金属在熔融金属的周围处于相同位置的方式进行控制。

40. 发明授权

US4424432A Electrode material for travelling-wire type electrical discharge machining 失效
标题翻译：用于行走式放电加工的电极材料
公开(公告)号：US4424432A
公开(公告)日：1984-01-03
申请号：US956329
申请日：1978-10-31
申请人： Hideo Kaneko , Makoto Onoue
发明人： Hideo Kaneko , Makoto Onoue
IPC分类号： B23H7/08 , B23K35/04 , C22C9/00 , B23K9/16
CPC分类号： B23H7/08
摘要： A method of electrical machining by the travelling-wire EDM process is improved by utilizing as the wire electrode for increased removal rate and reduced wear an electrode material which is drawn from a composition of 0.1 to 3% by weight zirconium, 0.3 to 10% zinc and the balance copper.
摘要翻译：通过利用作为线电极用于提高去除率和减少磨损的电线材料，通过使用0.1〜3重量％的锆，0.3〜10重量％的锌，和铜的平衡。

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