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1. 发明授权

US06666957B2 Magnetron sputtering system and photomask blank production method based on the same 有权
公开(公告)号：US06666957B2
公开(公告)日：2003-12-23
申请号：US10036685
申请日：2001-12-21
申请人： Masataka Watanabe , Satoshi Okazaki , Hideo Kaneko , Ken Ohashi , Hideki Kobayashi
发明人： Masataka Watanabe , Satoshi Okazaki , Hideo Kaneko , Ken Ohashi , Hideki Kobayashi
IPC分类号： C23C1435
CPC分类号： H01J37/3455 , C23C14/35 , H01J37/3408
摘要： The present invention provides a magnetron sputtering system, which ensures a formation of a desired thin film, using a thick target. In the sputtering process, a portion of the target does not have erosion free portions. The present invention provides a magnetron sputtering system comprising a chamber for sputtering, a target electrode 5 installed inside said chamber, a substrate electrode 6 installed in the chamber opposite to the target electrode, a ring-shaped magnet 2 installed so as to enclose the side surface of the target electrode, and a semi-circular disk shaped magnet installed opposite to the target-mounted surface of the target electrode, wherein the semi-circular disk shaped magnet is rotated in the circumferential direction of the target electrode and is magnetized in the direction perpendicular to the target electrode. This ensures a specific magnetic field component to be generated over the thick planar target surface 3.

2. 发明授权

US06641958B2 Phase shift mask blank, phase shift mask, and methods of manufacture 有权
公开(公告)号：US06641958B2
公开(公告)日：2003-11-04
申请号：US09902645
申请日：2001-07-12
申请人： Yukio Inazuki , Tamotsu Maruyama , Mikio Kojima , Hideo Kaneko , Masataka Watanabe , Satoshi Okazaki
发明人： Yukio Inazuki , Tamotsu Maruyama , Mikio Kojima , Hideo Kaneko , Masataka Watanabe , Satoshi Okazaki
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.

3. 发明授权

US07179567B2 Phase shift mask blank, phase shift mask, and method of manufacture 有权
标题翻译：相移掩模空白，相移掩模和制造方法
公开(公告)号：US07179567B2
公开(公告)日：2007-02-20
申请号：US10606894
申请日：2003-06-27
申请人： Yukio Inazuki , Masayuki Nakatsu , Tsuneo Numanami , Atsushi Tajika , Hideo Kaneko , Satoshi Okazaki
发明人： Yukio Inazuki , Masayuki Nakatsu , Tsuneo Numanami , Atsushi Tajika , Hideo Kaneko , Satoshi Okazaki
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/26
摘要： In a phase shift mask blank comprising a transparent substrate and a phase shift film thereon, after the phase shift film is formed on the substrate, it is surface treated with ozone water having an ozone concentration of at least 1 ppm. The resulting phase shift film is of quality in that it experiences minimized changes of phase difference and transmittance upon immersion in chemical liquid during subsequent mask cleaning step or the like.
摘要翻译：在包括透明基板和相移膜的相移掩模坯料中，在基板上形成相移膜之后，用臭氧浓度为至少1ppm的臭氧水进行表面处理。所得到的相移膜的质量在于，在随后的掩模清洁步骤等期间，其经历了在浸入化学液体中时相位差和透射率的最小化变化。

4. 发明授权

US06514642B2 Phase shift mask and method of manufacture 有权
标题翻译：相移掩模和制造方法
公开(公告)号：US06514642B2
公开(公告)日：2003-02-04
申请号：US09790886
申请日：2001-02-23
申请人： Satoshi Okazaki , Tamotsu Maruyama , Yukio Inazuki , Hideo Kaneko , Shinichi Kohno
发明人： Satoshi Okazaki , Tamotsu Maruyama , Yukio Inazuki , Hideo Kaneko , Shinichi Kohno
IPC分类号： G03F900
CPC分类号： G03F1/30 , C23C14/0057 , C23C14/0682 , Y10T428/31678
摘要： In a phase shift mask comprising an exposure light-transmitting substrate and a second light-transmitting region thereon, the second light-transmitting region functions as a phase shifter and is made of a fluorine-doped molybdenum silicide film or fluorine-doped chromium silicide film formed by a sputtering technique that uses molybdenum metal, chromium metal, molybdenum silicide or chromium silicide as the target and SiF2 as the reactive gas. The phase shifter has a high refractive index to short-wavelength exposure light, enabling a 180-degree phase change to be achieved at a minimum film thickness, and also has a good stability to such light. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
摘要翻译：在包括曝光透光基板和其上的第二透光区域的相移掩模中，第二透光区域用作移相器，并且由氟掺杂的硅化钼膜或氟掺杂的硅化铬膜通过使用钼金属，铬金属，硅化钼或硅化铬作为靶的溅射技术形成，SiF2作为反应气体。移相器对短波长曝光光具有高折射率，能够在最小膜厚度下实现180度相位变化，并且对于这种光也具有良好的稳定性。相移掩模可用于将半导体集成电路制造成更小的最小特征尺寸和更高的集成度。

5. 发明授权

US07736824B2 Photomask blank, photomask, and method of manufacture 有权
标题翻译：光掩模坯料，光掩模和制造方法
公开(公告)号：US07736824B2
公开(公告)日：2010-06-15
申请号：US11952283
申请日：2007-12-07
申请人： Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
发明人： Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
IPC分类号： G03F1/00 , B32B17/10
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译：一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻速率在表面。本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模从其获得的相移掩模。

6. 发明授权

US07344806B2 Method of producing phase shift mask blank, method of producing phase shift mask, phase shift mask blank, and phase shift mask 有权
标题翻译：产生相移掩模空白的方法，产生相移掩模的方法，相移掩模空白和相移掩模
公开(公告)号：US07344806B2
公开(公告)日：2008-03-18
申请号：US10806202
申请日：2004-03-23
申请人： Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
发明人： Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3464 , G03F1/54 , G03F1/68
摘要： There is disclosed a method of producing a phase shift mask blank wherein the method includes at least a step of forming one or more layers of phase shift films on a substrate by a sputtering method, and in the step, the phase shift films are formed by the sputtering method while simultaneously discharging plural targets having different compositions. Thereby, a phase shift mask blank having a desired composition and quality, in particular, having a phase shift film with few defects can be easily produced.
摘要翻译：公开了一种制造相移掩模板的方法，其中该方法至少包括通过溅射法在衬底上形成一层或多层相移膜的步骤，并且在该步骤中，相移膜由同时排出具有不同组成的多个靶的溅射方法。由此，可以容易地制造具有期望的组成和质量的相移掩模坯料，特别是具有少量缺陷的相移膜。

7. 发明授权

US06727027B2 Photomask blank and photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US06727027B2
公开(公告)日：2004-04-27
申请号：US10020987
申请日：2001-12-19
申请人： Tetsushi Tsukamoto , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki , Tsutomu Shinagawa , Satoshi Okazaki
发明人： Tetsushi Tsukamoto , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki , Tsutomu Shinagawa , Satoshi Okazaki
IPC分类号： G03F900
CPC分类号： G03F1/50 , G03F1/38
摘要： In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.
摘要翻译：在光掩模坯料的制造中，在其上沉积有遮光膜和抗反射膜之前，在透明基板上形成含有氧，氮和/或碳的铬材料的晶种层。种子层上的任何薄膜均按照细颗粒生长形成，因此得到的光掩模坯料具有改善的表面粗糙度，这使得能够在缺陷检查和电路图形检查的过程中进行高灵敏度检测。通过光刻图案化光掩模坯料，制造光掩模。

8. 发明授权

US07329474B2 Photomask blank, photomask, and method of manufacture 有权
标题翻译：光掩模坯料，光掩模和制造方法
公开(公告)号：US07329474B2
公开(公告)日：2008-02-12
申请号：US10811924
申请日：2004-03-30
申请人： Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
发明人： Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
IPC分类号： G03F1/00 , B32B17/06
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译：一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻速率在表面。本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模从其获得的相移掩模。

9. 发明申请

US20080090159A1 PHOTOMASK BLANK, PHOTOMASK, AND METHOD OF MANUFACTURE 有权
标题翻译： PHOTOMASK BLANK，PHOTOMASK和制造方法
公开(公告)号：US20080090159A1
公开(公告)日：2008-04-17
申请号：US11952283
申请日：2007-12-07
申请人： Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
发明人： Hiroki Yoshikawa , Yukio Inazuki , Noriyasu Fukushima , Hideo Kaneko , Satoshi Okazaki
IPC分类号： G03F1/00
CPC分类号： C23C14/3492 , C23C14/0084 , C23C14/048 , C23C14/0676 , C23C14/0682 , C23C14/3464 , G03F1/32 , Y10T428/31616
摘要： A photomask blank comprising a multilayer film including at least four layers of different compositions, wherein the interface between the layers is moderately graded in composition; a phase shift mask blank comprising a phase shift film of at least two layers including a surface layer of a composition based on a zirconium silicide compound and a substrate adjacent layer of a composition based on a molybdenum silicide compound, and a further layer between one layer and another layer of a different composition, the further layer having a composition moderately graded from that of the one layer to that of the other layer; a phase shift mask blank comprising a phase shift film including a plurality of layers containing a metal and silicon in different compositional ratios which are stacked in such order that a layer having a higher etching rate is on the substrate side and a layer having a lower etching rate is on the surface side. The invention provides a photomask blank, typically a phase shift mask blank, which satisfies optical properties such as transmittance, reflectance and refractive index at an exposure wavelength of interest, and has an etched pattern with a minimal line edge roughness, and a photomask, typically a phase shift mask obtained therefrom.
摘要翻译：一种光掩模坯料，其包括包含至少四层不同组成的多层膜，其中所述层之间的界面在组成上适度地分级; 相移掩模坯料，其包括至少两层的相移膜，所述相移膜包括基于硅化锆化合物的组合物的表面层和基于硅化钼化合物的组合物的基底相邻层，以及在层之间的另一层和另一层不同的组成，所述另一层具有从所述一层到另一层的组成适度分级的组成; 相移掩模坯料，其包括相移膜，所述相移膜包括多个层，所述多个层包含不同组成比的金属和硅，所述多个层按照使得具有较高蚀刻速率的层位于基板侧上的顺序层叠，并且具有较低蚀刻速率在表面。本发明提供了一种光掩模坯料，通常是相移掩模坯料，其满足感兴趣的曝光波长下的透光率，反射率和折射率等光学特性，并且具有最小线边缘粗糙度的蚀刻图案，以及光掩模从其获得的相移掩模。

10. 发明授权

US06589699B2 Photomask blank and photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US06589699B2
公开(公告)日：2003-07-08
申请号：US09840097
申请日：2001-04-24
申请人： Hideo Kaneko , Yukio Inazuki , Satoshi Okazaki
发明人： Hideo Kaneko , Yukio Inazuki , Satoshi Okazaki
IPC分类号： G03F900
CPC分类号： G03F1/50 , G03F1/46 , G03F1/54
摘要： A photomask blank comprising a transparent substrate on which are formed at least one light-shielding film and at least one antireflective film minimizes film stress and eliminates substrate warp following deposition of the light-shielding film and the antireflective film, when each film is composed of a CrCO layer, a CrCON layer, or a combination of CrCO and CrCON layers. The photomask blank can be accurately patterned without distortion to give a photomask.
摘要翻译：一种光掩模坯料，其中形成有至少一个遮光膜和至少一个抗反射膜的透明基板使膜应力最小化，并且当每个膜由遮光膜和抗反射膜构成时，消除了在遮光膜和抗反射膜沉积之后的基板翘曲 CrCO层，CrCON层或CrCO和CrCON层的组合。光掩模坯料可以精确地图案化而不变形，从而产生光掩模。

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