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1. 发明授权

US5582897A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5582897A
公开(公告)日：1996-12-10
申请号：US365207
申请日：1994-12-28
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
IPC分类号： G11B5/73 , B32B3/10 , G11B5/66
CPC分类号： G11B5/7315 , Y10S428/90 , Y10S428/928 , Y10T428/12465 , Y10T428/24355
摘要： Proposed is a magnetic recording medium consisting of a non-magnetic substrate and a magnetic recording layer formed thereon by the sputtering method, in which the non-magnetic substrate is a disk of single crystal silicon having a surface substantially in parallel with the crystallographic (111) plane with an angle of deviation not exceeding 15.degree., of which the surface roughness Rp does not exceed 25 nm. By virtue of the use of the unique material for the substrate, the magnetic recording layer is outstandingly stable as compared with conventional aluminum or glass substrates and the magnetic layer formed thereon by sputtering has a greatly improved coercive force of 1300 oersted or higher.
摘要翻译：提出了由非磁性基板和通过溅射法在其上形成的磁记录层构成的磁记录介质，其中非磁性基板是具有与晶体学（111）基本上平行的表面的单晶硅盘）平面，其偏转角不超过15°，其表面粗糙度Rp不超过25nm。由于使用独特材料作为基板，所以与常规的铝或玻璃基板相比，磁记录层非常稳定，并且通过溅射在其上形成的磁性层的矫顽力大大提高了1300奥斯特或更高。

2. 发明授权

US5720861A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5720861A
公开(公告)日：1998-02-24
申请号：US516046
申请日：1995-08-17
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
IPC分类号： G11B5/73 , G11B5/851 , C23C14/34
CPC分类号： G11B5/7315 , G11B5/851
摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium comprising a non-magnetic substrate plate of silicon and a magnetic recording layer formed on the substrate surface by the method of bias-sputtering, by which the magnetic recording layer can be imparted with an unexpectedly large coercive force. The improvement can be accomplished by the use of a silicon substrate plate which has a volume resistivity not exceeding 2 ohm-cm at room temperature. The improvement is more remarkable when the contact resistance between the silicon substrate plate and the substrate holder is kept not to exceed 10 kohm during the bias-sputtering for the formation of the magnetic recording layer on the substrate surface.
摘要翻译：在通过偏置溅射的方法制备磁记录介质的方法中提出了一种磁记录介质的方法，所述磁记录介质包括硅非磁性基板和形成在基板表面上的磁记录层，通过该方法磁记录层可以赋予了意想不到的大矫顽力。可以通过使用在室温下体积电阻率不超过2欧姆 - 厘米的硅衬底板来实现改进。当在衬底表面上形成磁记录层的偏压溅射期间，当硅衬底板和衬底保持器之间的接触电阻保持不超过10Kohm时，这种改进是更显着的。

3. 发明授权

US5643650A Magneto-optical recording medium 失效
标题翻译：磁光记录介质
公开(公告)号：US5643650A
公开(公告)日：1997-07-01
申请号：US496256
申请日：1995-06-28
申请人： Yoshio Tawara , Katsushi Tokunaga , Hideo Kaneko , Yoshiaki Shimizu
发明人： Yoshio Tawara , Katsushi Tokunaga , Hideo Kaneko , Yoshiaki Shimizu
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10591 , G11B11/10584 , G11B11/10586 , Y10S428/90
摘要： The recording sensitivity can be improved of a magneto-optical recording medium having a laminar structure consisting of a first dielectric layer, a recording layer, a second dielectric layer and reflecting layer successively formed on a transparent substrate plate by forming the reflecting layer from an alloy consisting of aluminum and from 0.05 to 3 atomic % of a rare earth element such as neodymium and gadolinium in place of pure aluminum as in conventional magneto-optical recording media.
摘要翻译：通过从合金形成反射层，可以提高具有由第一电介质层，记录层，第二电介质层和反射层组成的层状结构的磁光记录介质的记录灵敏度由铝和0.05〜3原子％的稀土元素如钕和钆代替纯铝如常规磁光记录介质。

4. 发明授权

US5554303A Magnetic recording medium preparation 失效
标题翻译：磁记录介质制备
公开(公告)号：US5554303A
公开(公告)日：1996-09-10
申请号：US397564
申请日：1995-03-02
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara , Noboru Tamai , Yasuaki Nakazato
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara , Noboru Tamai , Yasuaki Nakazato
IPC分类号： G11B5/84 , B44C1/22 , H01L21/00
CPC分类号： G11B5/8404
摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium by forming a magnetic recording layer of a magnetic alloy on the surface of a non-magnetic substrate plate of, e.g., silicon so as to impart the magnetic recording medium with improved CSS (contact-start-stop) characteristics still without affecting the magnetic recording density. The improvement can be obtained by subjecting the surface of the substrate plate, prior to the formation of the magnetic recording layer, to a surface-roughening treatment which is performed either by a dry-process such as plasma etching and reactive ion etching or by a wet-process of anisotropic etching by using an aqueous solution of sodium or potassium hydroxide as the anisotropic etching solution. In particular, the plasma etching or reactive ion etching is conducted in the presence of a particulate scattering source body of aluminum, etc. placed in the vicinity of the CSS zone so that the surface-roughening effect is limited to the CSS zone by the deposition of particulates scattered therefrom leaving the recording zone unroughened not to decrease the recording density.
摘要翻译：通过在例如硅的非磁性基板的表面上形成磁性合金的磁记录层，在制备磁记录介质的方法中提出了一种改进，以使磁记录介质具有改进的 CSS（接触开始 - 停止）特性仍然不影响磁记录密度。可以通过在形成磁记录层之前将基板的表面进行表面粗糙化处理来获得改进，所述表面粗糙化处理通过诸如等离子体蚀刻和反应离子蚀刻之类的干法进行，或通过通过使用氢氧化钠或氢氧化钾的水溶液作为各向异性蚀刻溶液进行各向异性蚀刻的湿法。特别地，等离子体蚀刻或反应离子蚀刻在放置在CSS区域附近的铝等微粒散射源体的存在下进行，使得表面粗糙化效果通过沉积被限制到CSS区域从而离开记录区未变粗糙的颗粒不会降低记录密度。

5. 发明授权

US5591502A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5591502A
公开(公告)日：1997-01-07
申请号：US348342
申请日：1994-12-02
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
IPC分类号： G11B5/73 , G11B5/84 , G11B5/66 , B32B3/02 , B32B5/16
CPC分类号： G11B5/7315 , G11B5/8404 , Y10S428/90 , Y10T428/12854 , Y10T428/265
摘要： Proposed is a magnetic recording medium consisting of a non-magnetic substrate and a magnetic recording layer formed thereon by the method of sputtering, in which the non-magnetic substrate is a disk of single crystal silicon having a surface of the crystallographic orientation of (100), the surface roughness Rp being 40 nm or smaller. By virtue of the use of the unique material for the substrate, the magnetic recording layer is outstandingly stable as compared with conventional aluminum or glass substrates and the magnetic layer formed thereon by sputtering has a greatly improved coercive force of 1300 oersted or higher.
摘要翻译：提出了一种由非磁性基板和通过溅射方法在其上形成的磁记录层组成的磁记录介质，其中非磁性基板是晶体取向面为（100）的单晶硅盘），表面粗糙度Rp为40nm以下。由于使用独特材料作为基板，所以与常规的铝或玻璃基板相比，磁记录层非常稳定，并且通过溅射在其上形成的磁性层的矫顽力大大提高了1300奥斯特或更高。

6. 发明授权

US5514468A Magneto-optical recording medium 失效
标题翻译：磁光记录介质
公开(公告)号：US5514468A
公开(公告)日：1996-05-07
申请号：US145173
申请日：1993-11-03
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara , Yoshiaki Shimizu , Tadao Nomura
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara , Yoshiaki Shimizu , Tadao Nomura
IPC分类号： G11B11/105 , B32B3/02 , B32B5/16 , G11B5/66
CPC分类号： G11B11/10584 , G11B11/10593 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： A magneto-optical recording medium having a layered structure consisting of a first dielectric layer, magnetic recording layer, second dielectric layer and reflecting layer successively formed on a transparent substrate plate can be imparted with improved performance relative to the recording sensitivity and the C/N ratio when the recording layer and the second dielectric layer each have such a thickness that the angle .delta. given by the equation .delta.=tan.sup.-1 (.epsilon./.theta.k), in which .epsilon. is the Kerr ellipticity of the regenerative light and .theta.k is the Kerr rotation angle, does not exceed 10.degree., the thickness of the recording layer being in the range from 8 nm to 13.5 nm and the thickness of the second dielectric layer satisfying the relationship given by the inequality0.06.ltoreq.nd/.lambda..ltoreq.0.14,in which d is the thickness of the second dielectric layer, .lambda. is the wavelength of the regenerative light for reading-out of the recorded signals and n is the refractive index of the material forming the second dielectric layer to the regenerative light of wavelength .lambda..
摘要翻译：具有由第一电介质层，磁记录层，第二电介质层和连续形成在透明基板上的反射层组成的层状结构的磁光记录介质可以相对于记录灵敏度和C / N 当记录层和第二介电层各自具有这样的厚度，即由等式delta = tan-1（epsilon /θk）给出的角度δ，其中ε是再生光的Kerr椭圆率和θk是克尔旋转角不超过10°，记录层的厚度在8nm至13.5nm的范围内，第二介电层的厚度满足不等式0.06

7. 发明授权

US5118573A Magneto-optical recording medium 失效
标题翻译：磁光记录介质
公开(公告)号：US5118573A
公开(公告)日：1992-06-02
申请号：US601659
申请日：1990-10-25
申请人： Yoshio Tawara , Katsushi Tokunaga , Tadao Nomura , Yoshiaki Shimizu , Yoshihiro Kubota , Meguru Kashida
发明人： Yoshio Tawara , Katsushi Tokunaga , Tadao Nomura , Yoshiaki Shimizu , Yoshihiro Kubota , Meguru Kashida
IPC分类号： G11B11/105
CPC分类号： G11B11/10586 , Y10S428/90
摘要： An improvement is obtained in the stability and recording density of a magneto-optical recording medium having a laminar structure on a transparent substrate plate successively consisting of a first dielectric layer, a magnetic recording layer, a second dielectric layer and a metallic light-reflecting layer by forming the dielectric layer with a unique and specific dielectric material which is an amorphous composite material comprising boron and hydrogen in a specified weight proportion formed by the method of plasma CVD or sputtering. The dielectric material can be a ternary composite of boron, hydrogen and nitrogen or quaternary composite of boron, hydrogen, nitrogen and silicon or carbon.

8. 发明授权

US4842759A Acicular process for producing particulate material 失效
标题翻译：针状生产颗粒材料的方法
公开(公告)号：US4842759A
公开(公告)日：1989-06-27
申请号：US918783
申请日：1986-10-14
申请人： Kazuo Okamura , Ikuo Kitamura , Hideki Aomi , Satoshi Koyama , Katsushi Tokunaga , Yoshiyuki Shibuya , Shiego Daimon
发明人： Kazuo Okamura , Ikuo Kitamura , Hideki Aomi , Satoshi Koyama , Katsushi Tokunaga , Yoshiyuki Shibuya , Shiego Daimon
IPC分类号： B01J27/22 , C01B31/30 , C30B25/00 , G11B5/706 , H01F1/11
CPC分类号： H01F1/11 , B01J27/22 , C01B31/301 , C30B25/005 , C30B29/36 , G11B5/70642 , G11B5/70668 , C01P2002/72 , C01P2002/74 , C01P2004/03 , C01P2004/10 , C01P2004/51 , C01P2004/52 , C01P2004/54 , C01P2004/61 , C01P2004/62 , C01P2004/80 , C01P2006/42 , C01P2006/60 , C01P2006/80
摘要： The present invention relates to novel acicular particles, processes for using the same, and magnetic materials prepared from such particles. In particular, the invention relates to an acicular particulate material containing iron carbide and having a high coercive force(Hc) an orientation property in a magnetic field.
摘要翻译：本发明涉及新颖的针状颗粒，其使用方法和由这些颗粒制备的磁性材料。特别地，本发明涉及含有碳化铁并具有高磁矫顽力（Hc）在磁场中的取向性能的针状颗粒材料。

9. 发明授权

US06815605B1 Silicon single crystal and wafer doped with gallium and method for producing them 有权
标题翻译：掺杂镓的硅单晶和晶片及其制造方法
公开(公告)号：US06815605B1
公开(公告)日：2004-11-09
申请号：US09743982
申请日：2001-01-18
申请人： Takao Abe , Teruhiko Hirasawa , Katsushi Tokunaga , Tetsuya Igarashi , Masafumi Yamaguchi
发明人： Takao Abe , Teruhiko Hirasawa , Katsushi Tokunaga , Tetsuya Igarashi , Masafumi Yamaguchi
IPC分类号： C03B1504
CPC分类号： C30B29/06 , C30B15/00
摘要： There can be provided according to the present invention a silicon single crystal produced according to Czochralski method to which Ga (gallium) is added as a dopant characterized in that a resistivity is 5&OHgr;.cm to 0.1&OHgr;.cm and a method for producing a silicon single crystal to which Ga (gallium) is added as a dopant according to Czochralski method characterized in that Ga is added in a silicon melt in a crucible, a seed crystal is brought into contact with the silicon melt and is pulled with rotating to grow a silicon single crystal ingot. Thereby, a silicon single crystal and silicon single crystal wafer and a method for producing them that can produce a solar cell characterized in that photo-degradation is not caused even in the single crystal having high oxygen concentration and a conversion efficiency of optical energy is very high.

10. 发明授权

US06313398B1 Ga-doped multi-crytsalline silicon, Ga-doped multi-crystalline silicon wafer and method for producing the same 有权
标题翻译： Ga掺杂多晶硅硅，Ga掺杂多晶硅晶片及其制造方法
公开(公告)号：US06313398B1
公开(公告)日：2001-11-06
申请号：US09593804
申请日：2000-06-15
申请人： Toru Yamada , Katsushi Tokunaga , Teruhiko Hirasawa
发明人： Toru Yamada , Katsushi Tokunaga , Teruhiko Hirasawa
IPC分类号： H01L31028
CPC分类号： H01L31/182 , H01L31/0288 , H01L31/03682 , Y02E10/546 , Y02P70/521 , Y10S438/914
摘要： There are disclosed multi-crystalline silicon which is added with Ga (gallium) as a dopant and a method for producing Ga-doped multi-crystalline silicon, which comprises adding Ga to silicon melt in a crucible, which is melted by heating, and cooling the silicon melt to allow growth of multi-crystalline silicon. According to the present invention, there are provided multi-crystalline silicon and a multi-crystalline silicon wafer for producing solar cells showing stable conversion efficiency for light energy without causing photodegradation as well as methods for producing them.
摘要翻译：公开了添加有Ga（镓）作为掺杂剂的多晶硅以及Ga掺杂多晶硅的制造方法，其包括将Ga加入到通过加热熔化的坩埚中的硅熔体和冷却该硅熔化以允许多晶硅生长。根据本发明，提供了多晶硅和用于制造太阳能电池的多晶硅晶片，其表现出光能的光转换效率，而不引起光降解，以及制造它们的方法。

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