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31. 发明申请

US20130237053A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
标题翻译：薄膜成型方法和薄膜成型装置
公开(公告)号：US20130237053A1
公开(公告)日：2013-09-12
申请号：US13876682
申请日：2011-09-26
申请人： Tadahiro Ishizaka , Takashi Sakuma , Tatsuo Hatano , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Toshihiko Fukushima , Hiroyuki Toshima , Masaya Kawamata , Yasushi Mizusawa , Takara Kato
发明人： Tadahiro Ishizaka , Takashi Sakuma , Tatsuo Hatano , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Toshihiko Fukushima , Hiroyuki Toshima , Masaya Kawamata , Yasushi Mizusawa , Takara Kato
IPC分类号： H01L21/768 , H01J37/34
CPC分类号： H01L21/768 , C23C14/021 , C23C14/024 , C23C14/14 , C23C14/345 , C23C14/3492 , C23C14/541 , C23C14/542 , H01J37/34 , H01L21/2855 , H01L21/76865 , H01L21/76873 , H01L21/76877 , H01L21/76882
摘要： A film forming method which generates metal ions from a metal target with a plasma in a processing chamber and attracts the metal ions with a bias to deposit a metal thin film on a target object wherein trenches are formed. The method includes: generating metal ions from a target and attracting the metal ions into a target object with a bias to form a base film in a trench; ionizing a rare gas with the bias in a state where no metal ion is generated and attracting the generated ions into the target object to etch the base film; and plasma sputtering the target to generate metal ions and attracting the metal ions into the object with a high frequency power for bias to deposit a main film as a metal film, while reflowing the main film by heating.
摘要翻译：一种在处理室中从具有等离子体的金属靶产生金属离子的薄膜形成方法，并且在偏压下吸引金属离子以在形成有沟槽的目标物体上沉积金属薄膜。该方法包括：从靶产生金属离子并以偏压将金属离子吸引到目标物体中，以在沟槽中形成基膜; 在不产生金属离子的状态下以偏压电离稀有气体，并将产生的离子吸引到目标物体中以蚀刻基膜; 并且等离子体溅射靶以产生金属离子并以高频功率将金属离子吸引到物体中以偏压沉积作为金属膜的主膜，同时通过加热回流主膜。

32. 发明授权

US07995189B2 Optical distance measuring sensor and electronic device 有权
标题翻译：光学距离测量传感器和电子设备
公开(公告)号：US07995189B2
公开(公告)日：2011-08-09
申请号：US12542115
申请日：2009-08-17
申请人： Akifumi Yamaguchi , Masaru Kubo , Toshihiko Fukushima
发明人： Akifumi Yamaguchi , Masaru Kubo , Toshihiko Fukushima
IPC分类号： G01C3/08
CPC分类号： G01B11/026 , G01C3/08 , G01S7/481 , G01S17/48
摘要： An optical distance measuring sensor includes a light receiving element arranged on the same plane as a light emitting element. The light receiving element includes a light receiving unit having a plurality of cells and collecting the light emitted from the light emitting element and reflected by a target object, a flash memory unit storing a predetermined position on the light receiving unit, and a signal processing circuit unit sensing the collection position of the light on the light receiving unit, and measuring the distance to the target object based on a relative positional relationship between the predetermined position stored in the flash memory unit and the collection position of the light on light receiving unit.
摘要翻译：光学距离测量传感器包括布置在与发光元件相同的平面上的光接收元件。光接收元件包括具有多个单元并且收集从发光元件发射并被目标物体反射的光的光接收单元，在光接收单元上存储预定位置的闪存单元，以及信号处理电路单元感测光接收单元上的光的收集位置，并且基于存储在闪存单元中的预定位置与光在光接收单元上的收集位置之间的相对位置关系来测量到目标对象的距离。

33. 发明授权

US07485924B2 Lateral double-diffused field effect transistor and integrated circuit having same 失效
标题翻译：横向双扩散场效应晶体管和集成电路相同
公开(公告)号：US07485924B2
公开(公告)日：2009-02-03
申请号：US11509717
申请日：2006-08-25
申请人： Takahiro Takimoto , Hiroki Nakamura , Toshihiko Fukushima
发明人： Takahiro Takimoto , Hiroki Nakamura , Toshihiko Fukushima
IPC分类号： H01L29/92
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/0886 , H01L29/42368 , H01L29/66681
摘要： In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.
摘要翻译：在本发明的横向双扩散场效应晶体管中，栅极绝缘膜包括覆盖源极扩散层直到超过体漫射层图案的区域的第一栅极绝缘膜和具有膜的第二栅极绝缘膜厚度大于第一栅极绝缘膜的厚度，并且覆盖比由第一栅极绝缘膜覆盖的区域更靠近漏极扩散层的区域。第一栅极绝缘膜和第二栅极绝缘膜之间的边界由平行于物体扩散层的图案的一侧的直线部分和从身体扩散层的图案的顶点围绕的角部。身体扩散层的图案的顶点与边界的角部之间的距离等于或小于身体扩散层的图案的一侧与边界的直线部分之间的距离。

34. 发明申请

US20070145484A1 Regulator circuit and semiconductor device therewith 审中-公开
标题翻译：调节器电路及其半导体器件
公开(公告)号：US20070145484A1
公开(公告)日：2007-06-28
申请号：US11591479
申请日：2006-11-02
申请人： Makoto Hosokawa , Toshihiko Fukushima , Naoki Fukunaga
发明人： Makoto Hosokawa , Toshihiko Fukushima , Naoki Fukunaga
IPC分类号： H01L23/62
CPC分类号： H01L27/0259
摘要： A regulator circuit including an output-stage transistor for supplying a current to an external circuit has an electrostatic protection transistor formed in parallel with the output-stage transistor. The base of the electrostatic protection transistor is connected to, for example, the base of the output-stage transistor, or alternatively to a ground line or to the emitter of the electrostatic protection transistor itself.
摘要翻译：包括用于向外部电路提供电流的输出级晶体管的调节器电路具有与输出级晶体管并联形成的静电保护晶体管。静电保护晶体管的基极连接到例如输出级晶体管的基极，或者替代地连接到静电保护晶体管本身的接地线或发射极。

35. 发明申请

US20070063271A1 Lateral double-diffused field effect transistor and integrated circuit having same 失效
标题翻译：横向双扩散场效应晶体管和集成电路相同
公开(公告)号：US20070063271A1
公开(公告)日：2007-03-22
申请号：US11509717
申请日：2006-08-25
申请人： Takahiro Takimoto , Hiroki Nakamura , Toshihiko Fukushima
发明人： Takahiro Takimoto , Hiroki Nakamura , Toshihiko Fukushima
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/0886 , H01L29/42368 , H01L29/66681
摘要： In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.
摘要翻译：在本发明的横向双扩散场效应晶体管中，栅极绝缘膜包括覆盖源极扩散层直到超过体漫射层图案的区域的第一栅极绝缘膜和具有膜的第二栅极绝缘膜厚度大于第一栅极绝缘膜的厚度，并且覆盖比由第一栅极绝缘膜覆盖的区域更靠近漏极扩散层的区域。第一栅极绝缘膜和第二栅极绝缘膜之间的边界由平行于物体扩散层的图案的一侧的直线部分和从身体扩散层的图案的顶点围绕的角部。身体扩散层的图案的顶点与边界的角部之间的距离等于或小于身体扩散层的图案的一侧与边界的直线部分之间的距离。

36. 发明授权

US06404029B1 Light sensitive element and light sensitive element having internal circuitry 有权
标题翻译：具有内部电路的光敏元件和光敏元件
公开(公告)号：US06404029B1
公开(公告)日：2002-06-11
申请号：US09656461
申请日：2000-09-06
申请人： Makoto Hosokawa , Naoki Fukunaga , Takahiro Takimoto , Masaru Kubo , Toshihiko Fukushima , Isamu Ohkubo
发明人： Makoto Hosokawa , Naoki Fukunaga , Takahiro Takimoto , Masaru Kubo , Toshihiko Fukushima , Isamu Ohkubo
IPC分类号： H01L2714
CPC分类号： H01L27/1443 , H01L31/0352
摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.
摘要翻译：光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面。扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

37. 发明授权

US06380603B1 Photosensitive device with internal circuitry that includes on the same substrate 失效
标题翻译：具有包含在同一基板上的内部电路的感光装置
公开(公告)号：US06380603B1
公开(公告)日：2002-04-30
申请号：US09707158
申请日：2000-11-07
申请人： Takahiro Takimoto , Toshihiko Fukushima , Isamu Ohkubo , Makoto Hosokawa , Masaru Kubo
发明人： Takahiro Takimoto , Toshihiko Fukushima , Isamu Ohkubo , Makoto Hosokawa , Masaru Kubo
IPC分类号： H01L3106
CPC分类号： H01L31/02024 , H01L27/144
摘要： A semiconductor device includes: a photosensitive section essentially composed of a PN junction between a semiconductor multilayer structure of the first conductivity type and a first semiconductor layer of the second conductivity type; and a partitioning portion for splitting the photosensitive section into a plurality of regions. The semiconductor multilayer structure of the first conductivity type includes: a semiconductor substrate of the first conductivity type; a first semiconductor layer of the first conductivity type; and a second semiconductor layer of the first conductivity type. The partitioning portion includes a third semiconductor layer of the first conductivity type extending from the first semiconductor layer of the second conductivity type so as to reach the second semiconductor layer of the first conductivity type.
摘要翻译：半导体器件包括：基本上由第一导电类型的半导体多层结构和第二导电类型的第一半导体层之间的PN结组成的感光部分; 以及用于将感光部分分成多个区域的分隔部分。第一导电类型的半导体多层结构包括：第一导电类型的半导体衬底; 第一导电类型的第一半导体层; 和第一导电类型的第二半导体层。分隔部分包括从第二导电类型的第一半导体层延伸的第一导电类型的第三半导体层，以到达第一导电类型的第二半导体层。

38. 发明授权

US5101640A Air conditioning apparatus, heat exchanger for use in the apparatus and apparatus control method 失效
标题翻译：空调设备，用于设备和设备控制方法的热交换器
公开(公告)号：US5101640A
公开(公告)日：1992-04-07
申请号：US620205
申请日：1990-11-30
申请人： Toshihiko Fukushima , Seigo Miyamoto , Masanori Musoh , Tomomi Umeda , Takatoshi Yamamoto
发明人： Toshihiko Fukushima , Seigo Miyamoto , Masanori Musoh , Tomomi Umeda , Takatoshi Yamamoto
IPC分类号： F25B1/00 , F25B39/04 , F25B49/02 , F28D1/04 , F28D1/053 , F28F9/02 , F28F27/02
CPC分类号： F28F27/02 , F25B49/027 , F28D1/0408 , F28D1/05366 , F28D1/05375 , F28F9/0212 , F25B2339/044 , F25B2339/0444 , F25B2400/0403 , F28D2021/0084 , Y10S62/17
摘要： The present invention provides an air conditioning apparatus for automobiles equipped with a heat exchanger and a control method for the apparatus, by which the heat transfer area of the heat exchanger can be properly controlled to permit a stable cycle operation, even when the capacity of a condenser is relatively overly enhanced under a condition of the low atmospheric temperature. The apparatus and the control method are achieved with such an arrangement that either one or both of headers of a heat exchanger is provided with at least one refrigerant flow rate control valve capable of opening and closing refrigerant passages in each header, the heat exchanger has a refrigerant inlet provided in one header and a refrigerant outlet provided in the other header, and the control valve is opened and closed to change the number of the passages allowing the refrigerant to pass therethrough, for thereby changing the effective heat transfer area for heat exchange dependent on the atmospheric temperature.
摘要翻译：本发明提供了一种配备有热交换器和装置的控制方法的汽车用空调装置，通过该装置可以适当地控制热交换器的传热面积以允许稳定的循环操作，即使在在低气温条件下，冷凝器相对过度增强。该装置和控制方法通过这样一种布置来实现，热交换器的集管中的一个或两个设置有能够打开和关闭每个集管中的制冷剂通道的至少一个制冷剂流量控制阀，该热交换器具有制冷剂入口设置在一个集管和设置在另一个集管中的制冷剂出口，并且控制阀被打开和关闭以改变允许制冷剂通过的通道的数量，从而改变有效的传热面积以进行热交换在大气温度下。

39. 发明授权

US4425765A Air conditioner for automobiles 失效
标题翻译：汽车空调
公开(公告)号：US4425765A
公开(公告)日：1984-01-17
申请号：US320535
申请日：1981-11-12
申请人： Toshihiko Fukushima , Seigo Miyamoto , Kenichi Kawashima , Toshiaki Kawabata , Seijiro Tani , Takanori Shibata
发明人： Toshihiko Fukushima , Seigo Miyamoto , Kenichi Kawashima , Toshiaki Kawabata , Seijiro Tani , Takanori Shibata
IPC分类号： B60H1/00 , B60H1/32 , F25D16/00 , B60H3/04 , F25B1/00
CPC分类号： F25D16/00 , B60H1/3208
摘要： An automobile air conditioner has a refrigeration cycle composed of a compressor, condenser, liquid tank, orifice means and an evaporator, as well as mechanical parts such as a radiator and radiator fan associated with the condenser and a blower combined with the evaporator. The compressor is operatively connected to the automobile engine through a connecting means so as to be driven by the engine selectively in accordance with the temperature in the passenger's compartment. According to the invention, the compressor is driven when the automobile is being braked, even if the temperature in the compartment is lower than a set temperature, to make an efficient use of the kinetic energy possessed by the mass of the automobile. The cold energy generated during braking is suitably stored and is released into the passenger's compartment as desired.
摘要翻译：汽车空调具有由压缩机，冷凝器，液罐，孔口装置和蒸发器构成的制冷循环，以及与冷凝器相连的散热器和散热器风扇等机械部件，以及与蒸发器结合的鼓风机。压缩机通过连接装置可操作地连接到汽车发动机，以便根据乘客舱内的温度选择性地由发动机驱动。根据本发明，即使在车辆的温度低于设定温度的情况下，也能够在汽车正在制动时驱动压缩机，以有效利用汽车的动力所具有的动能。在制动期间产生的冷能被适当地储存并根据需要被释放到乘客舱内。

40. 发明授权

US4314454A Method of operating refrigerating machine 失效
标题翻译：操作制冷机的方法
公开(公告)号：US4314454A
公开(公告)日：1982-02-09
申请号：US164945
申请日：1980-07-01
申请人： Kohji Kamejima , Minoru Kano , Hideki Tanaka , Toshihiko Fukushima
发明人： Kohji Kamejima , Minoru Kano , Hideki Tanaka , Toshihiko Fukushima
IPC分类号： F24F11/02 , F24F11/00 , F25D16/00 , G05D23/19 , F25D3/00 , F25D17/02
CPC分类号： F24F11/00 , F25D16/00 , G05D23/1923 , F24F11/0012 , F24F2005/0025 , F24F2011/0073 , F24F2011/0082
摘要： In a refrigerating and air-conditioning system provided with a heat storage tank, variation patterns of load and weather conditions are predicted. On the basis of the predicted values, optimum outputs of a refrigerating machine at individual time points within a predetermined operation period are determined for possible water temperatures of the heat storage tank and stored in a memory. In accordance with the actual water temperature of the heat storage tank, the optimum output of the refrigerating machine is retrieved from the memory and utilized for the operation thereof.
摘要翻译：在具有蓄热箱的制冷空调系统中，预测负荷和天气条件的变化模式。基于预测值，确定在预定操作时段内的各个时间点的制冷机的最佳输出，用于储存罐的可能的水温并存储在存储器中。根据蓄热箱的实际水温，从存储器中取出制冷机的最佳输出，并用于其运行。

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