专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06949809B2 Light receiving element, light detector with built-in circuitry and optical pickup 失效
标题翻译：光接收元件，具有内置电路和光学拾取器的光检测器
公开(公告)号：US06949809B2
公开(公告)日：2005-09-27
申请号：US10283323
申请日：2002-10-30
申请人： Takahiro Takimoto , Isamu Ohkubo , Masaru Kubo , Hiroki Nakamura , Toshihiko Fukushima , Toshifumi Yoshikawa
发明人： Takahiro Takimoto , Isamu Ohkubo , Masaru Kubo , Hiroki Nakamura , Toshihiko Fukushima , Toshifumi Yoshikawa
IPC分类号： H01L27/14 , G01J1/02 , G11B7/00 , H01L31/00 , H01L31/06 , H01L31/10 , H01L31/103
CPC分类号： H01L31/103 , G11B7/13
摘要： A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on the first conductivity type semiconductor layer in the semiconductor structure, a second, second conductivity type semiconductor layer having an impurity concentration lower than that of the first, second conductivity type semiconductor layer, a second, first conductivity type semiconductor layer provided on the second, second conductivity type semiconductor layer, or a second, first conductivity type semiconductor layer provided within the second, second conductivity type semiconductor layer.
摘要翻译：一种光接收元件，包括半导体结构，该半导体结构至少包括第一导电类型半导体层，设置在半导体结构中的第一导电类型半导体层上的第一，第二导电类型半导体层，第二导电类型半导体层，杂质浓度低于第一，第二导电类型半导体层，第二导电类型半导体层，设置在第二导电类型半导体层上的第二导电类型半导体层，或第二导电类型半导体层，型半导体层。

2. 发明授权

US07485924B2 Lateral double-diffused field effect transistor and integrated circuit having same 失效
标题翻译：横向双扩散场效应晶体管和集成电路相同
公开(公告)号：US07485924B2
公开(公告)日：2009-02-03
申请号：US11509717
申请日：2006-08-25
申请人： Takahiro Takimoto , Hiroki Nakamura , Toshihiko Fukushima
发明人： Takahiro Takimoto , Hiroki Nakamura , Toshihiko Fukushima
IPC分类号： H01L29/92
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/0886 , H01L29/42368 , H01L29/66681
摘要： In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.
摘要翻译：在本发明的横向双扩散场效应晶体管中，栅极绝缘膜包括覆盖源极扩散层直到超过体漫射层图案的区域的第一栅极绝缘膜和具有膜的第二栅极绝缘膜厚度大于第一栅极绝缘膜的厚度，并且覆盖比由第一栅极绝缘膜覆盖的区域更靠近漏极扩散层的区域。第一栅极绝缘膜和第二栅极绝缘膜之间的边界由平行于物体扩散层的图案的一侧的直线部分和从身体扩散层的图案的顶点围绕的角部。身体扩散层的图案的顶点与边界的角部之间的距离等于或小于身体扩散层的图案的一侧与边界的直线部分之间的距离。

3. 发明申请

US20070063271A1 Lateral double-diffused field effect transistor and integrated circuit having same 失效
标题翻译：横向双扩散场效应晶体管和集成电路相同
公开(公告)号：US20070063271A1
公开(公告)日：2007-03-22
申请号：US11509717
申请日：2006-08-25
申请人： Takahiro Takimoto , Hiroki Nakamura , Toshihiko Fukushima
发明人： Takahiro Takimoto , Hiroki Nakamura , Toshihiko Fukushima
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L29/7816 , H01L29/0696 , H01L29/0886 , H01L29/42368 , H01L29/66681
摘要： In a lateral double-diffused field effect transistor of the present invention, a gate insulating film includes a first gate insulating film covering a source diffusion layer up to a region beyond the pattern of a body diffusion layer and a second gate insulating film having a film thickness larger than that of the first gate insulating film and covering a region closer to a drain diffusion layer than the region covered by the first gate insulating film. A boundary between the first gate insulating film and the second gate insulating film is composed of a straight portion parallel to a side of the pattern of the body diffusion layer and a corner portion surrounding an vertex of the pattern of the body diffusion layer from a distance. A distance between the vertex of the pattern of the body diffusion layer and the corner portion of the boundary is equal to or smaller than a distance between the side of the pattern of the body diffusion layer and the straight portion of the boundary.
摘要翻译：在本发明的横向双扩散场效应晶体管中，栅极绝缘膜包括覆盖源极扩散层直到超过体漫射层图案的区域的第一栅极绝缘膜和具有膜的第二栅极绝缘膜厚度大于第一栅极绝缘膜的厚度，并且覆盖比由第一栅极绝缘膜覆盖的区域更靠近漏极扩散层的区域。第一栅极绝缘膜和第二栅极绝缘膜之间的边界由平行于物体扩散层的图案的一侧的直线部分和从身体扩散层的图案的顶点围绕的角部。身体扩散层的图案的顶点与边界的角部之间的距离等于或小于身体扩散层的图案的一侧与边界的直线部分之间的距离。

4. 发明授权

US08610202B2 Semiconductor device having a surrounding gate 有权
标题翻译：具有周围栅极的半导体器件
公开(公告)号：US08610202B2
公开(公告)日：2013-12-17
申请号：US12894923
申请日：2010-09-30
申请人： Fujio Masuoka , Hiroki Nakamura
发明人： Fujio Masuoka , Hiroki Nakamura
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/1203 , H01L21/823885 , H01L21/84 , H01L29/78642
摘要： There is provided a semiconductor device which has a CMOS inverter circuit and which can accomplish high-integration by configuring an inverter circuit with a columnar structural body. A semiconductor device includes a columnar structural body which is arranged on a substrate and which comprises a p-type silicon, an n-type silicon, and an oxide arranged between the p-type silicon and the n-type silicon and running in the vertical direction to the substrate, n-type high-concentration silicon layers arranged on and below the p-type silicon, p-type high-concentration silicon layers arrange on and below the n-type silicon, an insulator which surrounds the p-type silicon, the n-type silicon, and the oxide, and which serves as a gate insulator, and a conductive body which surrounds the insulator and which serves as a gate electrode.
摘要翻译：提供了具有CMOS反相器电路的半导体器件，其可以通过配置具有柱状结构体的逆变器电路来实现高集成度。半导体器件包括柱状结构体，其被布置在衬底上，并且包括p型硅，n型硅和布置在p型硅和n型硅之间并在垂直方向上运行的氧化物朝向衬底的方向，配置在p型硅和p型硅以上的n型高浓度硅层，p型高浓度硅层布置在n型硅的上方和下方，围绕p型硅的绝缘体，n型硅和氧化物，并且其用作栅极绝缘体，以及包围绝缘体并用作栅电极的导电体。

5. 发明授权

US08513717B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08513717B2
公开(公告)日：2013-08-20
申请号：US13328574
申请日：2011-12-16
申请人： Fujio Masuoka , Hiroki Nakamura
发明人： Fujio Masuoka , Hiroki Nakamura
IPC分类号： H01L29/76 , H01L31/062 , H01L29/94 , H01L31/113 , H01L31/119
CPC分类号： H01L21/823885 , H01L21/823487 , H01L27/0207 , H01L27/1104
摘要： A first driver transistor includes a first gate insulating film that surrounds a periphery of a first island-shaped semiconductor, a first gate electrode having a first surface that is in contact with the first gate insulating film, and first and second first-conductivity-type high-concentration semiconductors disposed on the top and bottom of the first island-shaped semiconductor, respectively. A first load transistor includes a second gate insulating film having a first surface that is in contact with a second surface of the first gate electrode, a first arcuate semiconductor formed so as to be in contact with a portion of a second surface of the second gate insulating film, and first and second second-conductivity-type high-concentration semiconductors disposed on the top and bottom of the first arcuate semiconductor, respectively. A first gate line extends from the first gate electrode and is made of the same material as the first gate electrode.
摘要翻译：第一驱动器晶体管包括围绕第一岛状半导体的周边的第一栅极绝缘膜，具有与第一栅极绝缘膜接触的第一表面的第一栅极电极和第一和第二第一导电型分别设置在第一岛状半导体的顶部和底部的高浓度半导体。第一负载晶体管包括具有与第一栅电极的第二表面接触的第一表面的第二栅极绝缘膜，形成为与第二栅极的第二表面的一部分接触的第一弧形半导体绝缘膜以及设置在第一弧形半导体的顶部和底部的第一和第二第二导电型高浓度半导体。第一栅极线从第一栅电极延伸并且由与第一栅电极相同的材料制成。

6. 发明授权

US08471327B2 Nonvolatile semiconductor memory transistor and method for manufacturing nonvolatile semiconductor memory 有权
公开(公告)号：US08471327B2
公开(公告)日：2013-06-25
申请号：US13163319
申请日：2011-06-17
申请人： Fujio Masuoka , Hiroki Nakamura
发明人： Fujio Masuoka , Hiroki Nakamura
IPC分类号： H01L29/788
CPC分类号： H01L29/7889 , H01L21/28273 , H01L27/11521 , H01L29/66825
摘要： A nonvolatile semiconductor memory transistor includes an island-shaped semiconductor having a source region, a channel region, and a drain region formed in this order from the silicon substrate side, a floating gate arranged so as to surround the outer periphery of the channel region with a tunnel insulating film interposed between the floating gate and the channel region, a control gate arranged so as to surround the outer periphery of the floating gate with an inter-polysilicon insulating film interposed between the control gate and the floating gate, and a control gate line electrically connected to the control gate and extending in a predetermined direction. The inter-polysilicon insulating film is arranged so as to be interposed between the floating gate and the lower and inner side surfaces of the control gate and between the floating gate and the lower surface of the control gate line.

7. 发明申请

US20120264265A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR 有权
标题翻译：半导体器件及其生产方法
公开(公告)号：US20120264265A1
公开(公告)日：2012-10-18
申请号：US13534615
申请日：2012-06-27
申请人： Fujio Masuoka , Hiroki Nakamura
发明人： Fujio Masuoka , Hiroki Nakamura
IPC分类号： H01L21/336
CPC分类号： H01L27/092 , H01L21/823828 , H01L21/823878 , H01L21/823885 , H01L21/84 , H01L27/1203 , H01L29/78642
摘要： It is an object to allow an inverter to be made up using a single island-shaped semiconductor, so as to provide a semiconductor device comprising a highly-integrated SGT-based CMOS inverter circuit. The object is achieved by a semiconductor device which comprises an island-shaped semiconductor layer, a first gate dielectric film surrounding a periphery of the island-shaped semiconductor layer, a gate electrode surrounding a periphery of the first gate dielectric film, a second gate dielectric film surrounding a periphery of the gate electrode, a tubular semiconductor layer surrounding a periphery of the second gate dielectric film, a first first-conductive-type high-concentration semiconductor layer disposed on top of the island-shaped semiconductor layer, a second first-conductive-type high-concentration semiconductor layer disposed underneath the island-shaped semiconductor layer, a first second-conductive-type high-concentration semiconductor layer disposed on top of the tubular semiconductor layer, and a second second-conductive-type high-concentration semiconductor layer disposed underneath the tubular semiconductor layer.
摘要翻译：本发明的目的是允许使用单个岛状半导体构成逆变器，以提供包括高度集成的基于SGT的CMOS反相器电路的半导体器件。该目的通过一种半导体器件实现，该半导体器件包括岛状半导体层，围绕岛状半导体层的周围的第一栅极电介质膜，围绕第一栅极电介质膜周围的栅电极，第二栅极电介质围绕所述栅电极的周围的薄膜，围绕所述第二栅极电介质膜的周围的管状半导体层，设置在所述岛状半导体层的顶部的第一第一导电型高浓度半导体层，布置在岛状半导体层下方的导电型高浓度半导体层，设置在管状半导体层顶部的第一第二导电型高浓度半导体层和第二第二导电型高浓度半导体层层设置在管状半导体层下方。

8. 发明申请

US20120135271A1 HOT DIP AL-ZN COATED STEEL SHEET 审中-公开
标题翻译： HOT DIP AL-ZN涂层钢板
公开(公告)号：US20120135271A1
公开(公告)日：2012-05-31
申请号：US13322638
申请日：2010-05-27
申请人： Toshihiko Ooi , Hiroki Nakamura , Shinji Ootsuka , Hiroyuki Masuoka , Masahiro Yoshida
发明人： Toshihiko Ooi , Hiroki Nakamura , Shinji Ootsuka , Hiroyuki Masuoka , Masahiro Yoshida
IPC分类号： B32B15/01
CPC分类号： C23C2/12 , B32B15/012 , B32B15/013 , C22C18/04 , C22C21/10 , C23C2/06 , Y10T428/12757 , Y10T428/12799
摘要： A hot dip Al—Zn coated steel sheet exhibits excellent corrosion resistance. The Al content in a coated film is 20-95% by mass. The Ca content is 0.01-10% by mass. Alternatively, the total content of Ca and Mg is 0.01-10% by mass. Preferably, the coated film includes an upper layer and an alloy phase present at the interface to a substrate steel sheet, and Ca or Ca and Mg are contained primarily in the upper layer. Also preferably, the Ca or Ca and Mg include an intermetallic compound with at least one type selected from Zn, Al, and Si. If Ca or Ca and Mg are contained in the coated film, as described above, these elements are contained in corrosion products generated in a bonded portion and exert effects of stabilizing the corrosion products and retarding proceeding of corrosion thereafter. Then, as a result, the corrosion resistance is improved.
摘要翻译：热浸镀铝锌钢板表现出优异的耐腐蚀性。涂膜中的Al含量为20〜95质量％。 Ca含量为0.01〜10质量％。或者，Ca和Mg的总含量为0.01〜10质量％。优选地，涂膜包括在与基板钢板的界面处存在的上层和合金相，并且Ca或Ca和Mg主要包含在上层中。还优选地，Ca或Ca和Mg包括具有选自Zn，Al和Si中的至少一种的金属间化合物。如果如上所述，如果在涂膜中含有Ca或Ca和Mg，则这些元素被包含在接合部分产生的腐蚀产物中，并且具有稳定腐蚀产物的作用，并且此后延迟腐蚀进行。结果，耐腐蚀性提高。

9. 发明授权

US08178399B1 Production method for semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08178399B1
公开(公告)日：2012-05-15
申请号：US13354579
申请日：2012-01-20
申请人： Fujio Masuoka , Tomohiko Kudo , Shintaro Arai , Hiroki Nakamura
发明人： Fujio Masuoka , Tomohiko Kudo , Shintaro Arai , Hiroki Nakamura
IPC分类号： H01L21/00 , H01L21/84 , H01L21/336 , H01L21/8234 , H01L21/8238
CPC分类号： H01L29/78642 , H01L29/42392 , H01L29/66666
摘要： An SGT production method includes forming a pillar-shaped first-conductive-type semiconductor layer and forming a second-conductive-type semiconductor layer underneath the first-conductive-type semiconductor layer. A dummy gate dielectric film and a dummy gate electrode are formed around the first-conductive-type semiconductor layer and a first dielectric film is formed on an upper region of a sidewall of the first-conductive-type semiconductor layer in contact with a top of the gate electrode. A first dielectric film is formed on a sidewall of the gate electrode and a second-conductive-type semiconductor layer is formed in an upper portion of the first-conductive-type semiconductor layer. A second-conductive-type semiconductor layer is formed in an upper portion of the first-conductive-type semiconductor layer and a metal-semiconductor compound is formed on each of the second-conductive-type semiconductor layers. The dummy gate dielectric film and the dummy gate electrode are removed and a high-k gate dielectric film and a metal gate electrode are formed.
摘要翻译： SGT制造方法包括形成柱状的第一导电型半导体层，在第一导电型半导体层的下方形成第二导电型半导体层。在第一导电型半导体层周围形成虚拟栅极电介质膜和虚拟栅电极，并且第一电介质膜形成在第一导电型半导体层的与顶部接触的第一导电型半导体层的侧壁的上部区域栅电极。第一电介质膜形成在栅电极的侧壁上，第二导电型半导体层形成在第一导电型半导体层的上部。第二导电型半导体层形成在第一导电型半导体层的上部，并且在每个第二导电型半导体层上形成金属半导体化合物。除去虚拟栅极电介质膜和虚拟栅电极，形成高k栅极电介质膜和金属栅电极。

10. 发明申请

US20120025291A1 NONVOLATILE SEMICONDUCTOR MEMORY TRANSISTOR AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY 有权
标题翻译：非易失性半导体存储器晶体管和制造非易失性半导体存储器的方法
公开(公告)号：US20120025291A1
公开(公告)日：2012-02-02
申请号：US13163319
申请日：2011-06-17
申请人： Fujio Masuoka , Hiroki Nakamura
发明人： Fujio Masuoka , Hiroki Nakamura
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/7889 , H01L21/28273 , H01L27/11521 , H01L29/66825
摘要： A nonvolatile semiconductor memory transistor includes an island-shaped semiconductor having a source region, a channel region, and a drain region formed in this order from the silicon substrate side, a floating gate arranged so as to surround the outer periphery of the channel region with a tunnel insulating film interposed between the floating gate and the channel region, a control gate arranged so as to surround the outer periphery of the floating gate with an inter-polysilicon insulating film interposed between the control gate and the floating gate, and a control gate line electrically connected to the control gate and extending in a predetermined direction. The inter-polysilicon insulating film is arranged so as to be interposed between the floating gate and the lower and inner side surfaces of the control gate and between the floating gate and the lower surface of the control gate line.
摘要翻译：非易失性半导体存储晶体管包括岛状半导体，其具有从硅衬底侧依次形成的源极区，沟道区和漏极区，浮置栅极，以围绕沟道区的外周的方式布置，插入在所述浮置栅极和所述沟道区域之间的隧道绝缘膜，控制栅极，其布置成围绕所述浮置栅极的外周，所述控制栅极具有介于所述控制栅极和所述浮置栅极之间的多晶硅间绝缘膜，以及控制栅极线路电连接到控制门并沿预定方向延伸。多晶硅间绝缘膜被布置成插入在控制栅极的浮动栅极和下侧和内侧表面之间以及浮动栅极和控制栅极线的下表面之间。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式