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31. 发明专利

JP2013258207A Semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：JP2013258207A
公开(公告)日：2013-12-26
申请号：JP2012132221
申请日：2012-06-11
申请人： Toshiba Corp , 株式会社東芝
发明人： TAJIMA JUNPEI , ZAIMA KOTARO , ONO HIROSHI , YAMADA SHINJI , KIMURA SHIGEYA , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L33/38 , H01L33/10 , H01L33/24
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/382 , H01L33/385 , H01L33/405
摘要： PROBLEM TO BE SOLVED: To provide a high-quality semiconductor light-emitting element and a method of manufacturing the same.SOLUTION: There is provided a semiconductor light-emitting element including a first electrode, a first semiconductor layer, a light-emitting layer, a second semiconductor layer, an insulating layer, and a second electrode. The first electrode includes a first region, a second region, and a third region between the first region and the second region. The first semiconductor layer includes a first portion on the first region and a second portion on the second region, and has a first conductivity type. The light-emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and sixth portion on the fourth portion, and has a second conductivity type. The insulating layer is provided between the first portion and the second portion and between the third portion and the fourth portion on the third region. The second electrode includes a seventh portion on the insulating film, an eighth portion in contact with a side surface of the fifth portion opposite to the sixth portion, and a ninth portion in contact with a side surface of the sixth portion opposite to the fifth portion.
摘要翻译：要解决的问题：提供一种高质量的半导体发光元件及其制造方法。解决方案：提供一种半导体发光元件，包括第一电极，第一半导体层，发光层，第二半导体层，绝缘层和第二电极。第一电极包括第一区域，第二区域和第一区域与第二区域之间的第三区域。第一半导体层包括第一区域上的第一部分和第二区域上的第二部分，并且具有第一导电类型。发光层包括第一部分上的第三部分和第二部分上的第四部分。第二半导体层包括在第三部分上的第五部分和第四部分上的第六部分，并且具有第二导电类型。绝缘层设置在第一部分和第二部分之间以及第三部分与第三部分之间的第四部分之间。第二电极包括绝缘膜上的第七部分，与第五部分的与第六部分相对的侧表面接触的第八部分和与第五部分相对的第五部分的侧表面接触的第九部分。

32. 发明专利

JP2013182893A Image sensor and method of manufacturing the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：JP2013182893A
公开(公告)日：2013-09-12
申请号：JP2012043393
申请日：2012-02-29
申请人： Toshiba Corp , 株式会社東芝
发明人： ONO HIROSHI , FUJII OSAMU , SHIRATO MASATAKA , MOTOMIYA YOSHINORI
IPC分类号： H01L27/146 , H04N5/369
CPC分类号： H01L27/14601 , H01L27/146 , H01L27/1463 , H01L27/14643 , H01L27/14683 , H04N5/335 , H04N5/369
摘要： PROBLEM TO BE SOLVED: To suppress variation in device characteristics caused by variation in temperature during manufacturing of an image pickup device region, thereby improving the quality.SOLUTION: There is provided an image sensor comprising: an image pickup device region 20 formed by arranging a plurality of image pickup devices 21 on a semiconductor substrate 10 and including a device separation part 23 configured to separate the image pickup devices 21; and a logic circuit region 30 formed in a region different from the image pickup device region 20 on the substrate 10 and including a plurality of gate patterns 35. A dummy device separation part 45 is formed at a constant pitch in a boundary region 40 between the image pickup device region 20 and the logic circuit region 30.
摘要翻译：要解决的问题：抑制由摄像元件区域制造过程中的温度变化引起的器件特性的变化，从而提高质量。解决方案：提供一种图像传感器，包括：图像拾取器件区域20，多个图像拾取装置21，其包括被配置为分离图像拾取装置21的装置分离部23; 以及形成在与基板10上的图像拾取器件区域20不同的区域中并且包括多个栅极图案35的逻辑电路区域30.虚设器件分离部件45以恒定的间距形成在边界区域40之间图像拾取器件区域20和逻辑电路区域30。

33. 发明专利

JP2012244153A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2012244153A
公开(公告)日：2012-12-10
申请号：JP2012009160
申请日：2012-01-19
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIYAMA NAOJI , SATO TAISUKE , ONO HIROSHI , MIKI SATOSHI , SHIODA MICHIYA , HUANG JONG-IL , HUNG HUNG , NUNOUE SHINYA
IPC分类号： H01L33/20 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of improving light extraction efficiency with high reproductive rate.SOLUTION: According to an embodiment of the present invention, there is provided a semiconductor light-emitting device comprising a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a low-refractive-index layer, and a transparent electrode. The first semiconductor layer forms a light extraction surface. The light-emitting layer is provided on the first semiconductor layer and includes an active layer. The second semiconductor layer is provided on the light-emitting layer. The low-refractive-index layer has a refractive index lower than a refractive index of the first semiconductor layer, and partially covers the light extraction surface, and a part or all of the low-refractive-index layer is embedded in the first semiconductor layer. The transparent electrode covers the light extraction surface and the low-refractive-index layer, and allows light emitted from the light-emitting layer to pass through.
摘要翻译：解决的问题：提供能够以高繁殖率提高光提取效率的半导体发光装置。解决方案：根据本发明的实施例，提供了一种半导体发光器件，其包括第一半导体层，发光层，第二半导体层，低折射率层和透明电极。第一半导体层形成光提取面。发光层设置在第一半导体层上并且包括有源层。第二半导体层设置在发光层上。低折射率层的折射率低于第一半导体层的折射率，并且部分地覆盖光提取表面，并且部分或全部低折射率层嵌入第一半导体层。透明电极覆盖光提取面和低折射率层，并且允许从发光层发射的光通过。版权所有（C）2013，JPO＆INPIT

34. 发明专利

JP2012243815A Semiconductor light-emitting device, wafer, and method of manufacturing nitride semiconductor crystal layer 有权
标题翻译：半导体发光器件，波形和制造氮化物半导体晶体层的方法
公开(公告)号：JP2012243815A
公开(公告)日：2012-12-10
申请号：JP2011109784
申请日：2011-05-16
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIYAMA NAOJI , SATO TAISUKE , ONO HIROSHI , MIKI SATOSHI , SHIODA MICHIYA , HUANG JONG-IL , HUNG HUNG , NUNOUE SHINYA
IPC分类号： H01L33/22 , C23C14/14 , C23C16/01 , C23C16/34 , H01L21/205 , H01L33/32
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device, a wafer, and a nitride semiconductor crystal layer capable of improving light extraction efficiency with high reproductive rate.SOLUTION: According to an embodiment of the present invention, there is provided a semiconductor light-emitting device comprising a first semiconductor layer, a light-emitting layer, a second semiconductor layer, and a low-refractive-index layer. The first semiconductor layer forms a light extraction surface. The light-emitting layer is provided on the first semiconductor layer and includes an active layer. The second semiconductor layer is provided on the light-emitting layer. The low-refractive-index layer has a refractive index lower than a refractive index of the first semiconductor layer, and partially covers the light extraction surface.
摘要翻译：要解决的问题：提供能够以高繁殖率提高光提取效率的半导体发光器件，晶片和氮化物半导体晶体层。解决方案：根据本发明的实施例，提供一种包括第一半导体层，发光层，第二半导体层和低折射率层的半导体发光器件。第一半导体层形成光提取面。发光层设置在第一半导体层上并且包括有源层。第二半导体层设置在发光层上。低折射率层的折射率低于第一半导体层的折射率，并且部分地覆盖光提取表面。版权所有（C）2013，JPO＆INPIT

35. 发明专利

JP2012132771A Device, method and program for monitoring nuclear thermal-hydraulic stability of nuclear reactor 有权
标题翻译：用于监测核反应堆的核热液压稳定性的装置，方法和程序
公开(公告)号：JP2012132771A
公开(公告)日：2012-07-12
申请号：JP2010284651
申请日：2010-12-21
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKEUCHI YUTAKA , ONO HIROSHI , YANO KAZUKI
IPC分类号： G21C17/00
CPC分类号： Y02E30/39
摘要： PROBLEM TO BE SOLVED: To provide a technique of improving the monitoring accuracy and reliability of the nuclear thermal-hydraulic stability of a nuclear reactor.SOLUTION: A monitoring device 50 includes: damping ratio calculation units 52 which calculate the damping ratios γ of nuclear instrumentation signals S output from a plurality of nuclear instrumentation detectors 31 to detect neutrons in a nuclear core 16; a destabilization index computation unit 54 which counts the damping ratios γ exceeding a first reference value D out of a plurality of the damping ratios γ to compute a destabilization index R of the nuclear core 16; and a start instruction unit 56 which instructs the start of output suppression means 60 of the nuclear core 16 when the destabilization index R exceeds a second reference value P.
摘要翻译：要解决的问题：提供一种提高核反应堆的核热液压稳定性的监测精度和可靠性的技术。解决方案：监视装置50包括：阻尼比计算单元52，其计算从多个核仪器检测器31输出的用于检测核芯16中的中子的核仪器信号S的阻尼比γ; 不稳定度计算单元54，其计算阻尼比γ超过多个阻尼比γ中的第一基准值D，以计算核芯16的不稳定指数R; 以及当不稳定指数R超过第二参考值P时指示核芯16的输出抑制装置60的启动的开始指令单元56.（C）2012，JPO和INPIT

36. 发明专利

JP2011203228A Acceleration sensor 有权
标题翻译：加速传感器
公开(公告)号：JP2011203228A
公开(公告)日：2011-10-13
申请号：JP2010073696
申请日：2010-03-26
申请人： Toshiba Corp , 株式会社東芝
发明人： KAWAKUBO TAKASHI , NAGANO TOSHIHIKO , NISHIGAKI MICHIHIKO , ONO HIROSHI
IPC分类号： G01P15/10 , G01P15/13 , H01L41/08 , H01L41/187
CPC分类号： G01P15/097 , G01P15/0888 , G01P15/18 , G01P2015/0817 , G01P2015/0845
摘要： PROBLEM TO BE SOLVED: To provide an acceleration sensor that enables highly accurate detection and has an extremely compact size.SOLUTION: The acceleration sensor includes: a substrate; an anchor portion formed on the substrate; a support beam, which has one end connected to the anchor portion and extends across a space from the substrate; a proof mass that is connected to the other end of the support beam and is held across a space from the substrate; first and second piezoelectric bending resonators, having one end connected to the anchor portion and the other end connected to the proof mass or the support beam and have a stack of a first electrode, a first piezoelectric film, and a second electrode, extending on both sides of the support beam and performing bending resonance motion in a direction perpendicular to the piezoelectric film; the comparison means measuring a difference of a resonance frequency between the first and second piezoelectric bending resonators; and the calculation means calculating an acceleration in a direction perpendicular to the extending direction of the support beam in the substrate surface from the difference of the resonance frequency.
摘要翻译：要解决的问题：提供能够进行高精度检测并具有非常紧凑尺寸的加速度传感器。解决方案：加速度传感器包括：基板; 形成在所述基板上的锚定部; 支撑梁，其一端连接到锚定部分并且延伸穿过基板的空间; 连接到所述支撑梁的另一端并被保持在与所述基板相隔的空间的检验质量块; 第一和第二压电弯曲谐振器，其一端连接到锚定部分，另一端连接到检测质量块或支撑梁，并且具有在两者上延伸的第一电极，第一压电膜和第二电极的堆叠并且在垂直于压电膜的方向上执行弯曲共振运动; 所述比较装置测量所述第一和第二压电弯曲谐振器之间的谐振频率的差; 并且所述计算装置从所述共振频率的差计算在所述基板表面中与所述支撑梁的延伸方向垂直的方向上的加速度。

37. 发明专利

JP2011137701A Device and method for monitoring reactor power 有权
标题翻译：用于监测反应堆功率的装置和方法
公开(公告)号：JP2011137701A
公开(公告)日：2011-07-14
申请号：JP2009297510
申请日：2009-12-28
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKEUCHI YUTAKA , ONO HIROSHI , YANO KAZUKI
IPC分类号： G21C17/00
摘要： PROBLEM TO BE SOLVED: To provide the reactor power monitoring technology which improves monitoring accuracy and reliability of nuclear thermal-hydraulic stability.
SOLUTION: A reactor power monitor includes calculation components 44, which individually process nuclear instrumentation signals S output from nuclear instrumentation detectors 31, placed inside a core and calculate a first stability index K1 corresponding to each of the nuclear instrumentation detectors 31; and a statistical processing component 70, into which the first stability index K1 is input from each of the calculation components 44 and which statistically processes the index and a first evaluation component 81 which evaluates the nuclear thermal-hydraulic stability in the core from the results of the statistical processing.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供反应堆功率监测技术，提高核热液压稳定性的监测精度和可靠性。解决方案：电抗器功率监测器包括计算部件44，其计算单独处理放置在核心内的核仪器检测器31输出的核仪器信号S，并计算与每个核仪器检测器31相对应的第一稳定指数K1; 以及统计处理部件70，其中从每个计算部件44输入第一稳定性指标K1并对其进行统计处理;以及第一评估部件81，其从核心的核热液压稳定性的结果统计处理。版权所有（C）2011，JPO＆INPIT

38. 发明专利

JP2009141075A Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：JP2009141075A
公开(公告)日：2009-06-25
申请号：JP2007315056
申请日：2007-12-05
申请人： Toshiba Corp , 株式会社東芝
发明人： ONO HIROSHI , ITANI KOJI , MORIFUJI EIJI , OISHI NORIKAZU , IINUMA TOSHIHIKO , MOTOMIYA YOSHINORI
IPC分类号： H01L21/822 , H01L21/26 , H01L21/3205 , H01L21/82 , H01L23/52 , H01L27/04
CPC分类号： H01L21/2686 , H01L21/268 , H01L21/823437 , H01L27/088 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing temperature unevenness without making longer a temperature raising time of a semiconductor substrate during optical annealing to contribute to improvement in circuit performance, and to provide a method of manufacturing the same. SOLUTION: The semiconductor device, which is fabricated through an optical annealing step using irradiation light of ≤1.5 μm in main wavelength, includes: a circuit pattern region 20 formed on the semiconductor substrate and having integrated circuit patterns 21 and 22 to contribute to circuit operations; and a dummy gate region 30 which is formed on the substrate apart from the circuit pattern region 20 and in which dummy gate patterns 31 having the same structure with a gate pattern 21 used for the integrated circuit patterns and not contributing to the circuit operations are formed periodically at a pitch ≤0.4 time as large as the main wavelength. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在光退火期间不降低半导体衬底的升温时间的同时降低温度不均匀性的半导体器件，有助于电路性能的提高，并提供其制造方法。解决方案：通过使用主波长为≤1.5μm的照射光的光学退火步骤制造的半导体器件包括：形成在半导体衬底上并具有集成电路图案21和22的电路图案区域20，用于贡献电路操作; 以及形成在与电路图案区域20分离的基板上的伪栅极区域30，其中形成与用于集成电路图案的栅极图案21具有相同结构的虚拟栅极图案31，并且不对电路操作有贡献周期性地以与主波长一样大的音调≤0.4倍。版权所有（C）2009，JPO＆INPIT

39. 发明专利

JP2007240464A Core monitor unit of boiling water reactor 审中-公开
标题翻译：锅炉水反应堆核心监测单位
公开(公告)号：JP2007240464A
公开(公告)日：2007-09-20
申请号：JP2006066761
申请日：2006-03-10
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKEUCHI YUTAKA , ONO HIROSHI , KANEMOTO SHIGERU
IPC分类号： G21C17/00
摘要： PROBLEM TO BE SOLVED: To provide a core monitor unit of a boiling water reactor capable of accurately detecting a local abnormality inside a reactor, by combining the Kalman filter and a nuclear hydrothermal dynamic characteristics model inside the reactor. SOLUTION: The core monitor of a boiling water reactor can estimate the state within a reactor core 11 of a boiling water reactor power plant, by combining the Kalman filter and the core dymanic characteristics model of the boiling water reactor power plant, to reconstruct non-observation data on the basis of observed data on a core parameter. COPYRIGHT: (C)2007,JPO&INPIT

40. 发明专利

JP2015043307A 片面発光タイプの透明な導光板、およびこの導光板を用いた面発光装置有权
标题翻译：单面发光型透明光导板和使用其的表面发光器件
公开(公告)号：JP2015043307A
公开(公告)日：2015-03-05
申请号：JP2013175084
申请日：2013-08-26
申请人：株式会社東芝 , Toshiba Corp
发明人： HAYASHIBARA HIROMICHI , ONO HIROSHI , YAMAMOTO YUICHIRO , SHIRATO MASATAKA , KATO MITSUAKI , TAKAMATSU TOMONAO
IPC分类号： F21S2/00
CPC分类号： G02B6/0043 , G02B6/0058 , G02B6/006 , G02B6/0063
摘要：【課題】高い透明度を有し、高い発光効率を有する導光板、およびこの導光板を用いた面発光装置を提供することを課題とする。【解決手段】実施形態に係る導光板は、光を射出する射出面、この射出面に対向した背面、および射出面と背面をつなぐ端面を有し、端面から光が入射していない状態で透明である。背面には、端面から入射した光を内側に反射するための第1の光散乱手段が設けられている。射出面には、第1の光散乱手段より多くの光を透過する第2の光散乱手段が設けられている。【選択図】図1
摘要翻译：要解决的问题：提供具有高透明度和高发光效率的导光板以及使用该导光板的面发光装置。解决方案：一种导光板，其具有用于发射光，面向发射表面的背面和用于连接发射表面和背表面的端面在光不从端表面入射的状态下是透明的。在后表面上设置有用于将从端面入射的光反射到内部的第一光散射装置。在发射表面上设置有用于传输比第一光散射装置更多的光的第二光散射装置。

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