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1. 发明专利

JP2014063903A Semiconductor wafer, semiconductor element, and method for manufacturing nitride semiconductor layer 有权
标题翻译：半导体晶体管，半导体元件和制造氮化物半导体层的方法
公开(公告)号：JP2014063903A
公开(公告)日：2014-04-10
申请号：JP2012208567
申请日：2012-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： HARADA YOSHIYUKI , HIKOSAKA TOSHIKI , YOSHIDA GAKUSHI , HUNG HUNG , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L21/205 , C23C16/34 , C30B29/38 , H01L33/16 , H01L33/32
CPC分类号： H01L29/2003 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02617 , H01L29/0684 , H01L29/205 , H01L29/36 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor wafer with a low dislocation density, a semiconductor element, and a method for manufacturing a nitride semiconductor layer.SOLUTION: A semiconductor wafer 110 is provided by sequentially laminating an AlN buffer layer 22, a ground layer 24, a first high Ga composition layer 30, a high Al composition layer 42, a low Al composition layer 44, an intermediate part 50, and a second high Ga composition layer 60 on a substrate 10. In the intermediate part 50, an impurity containing any of Si, Mg, and B has a high concentration. The second high Ga composition layer 60 has larger tensile strain than the first high Ga composition layer 30 or smaller compressive strain than the first high Ga composition layer 30. The second high Ga composition layer 60 has tensile strain, and the first high Ga composition layer 30 has compressive strain.
摘要翻译：要解决的问题：提供具有低位错密度的半导体晶片，半导体元件和用于制造氮化物半导体层的方法。解决方案：半导体晶片110通过依次层叠AlN缓冲层22，接地层 24是在基板10上形成第一高Ga组分层30，高Al组分层42，低Al组分层44，中间部分50和第二高Ga组分层60.在中间部分50中，杂质含有Si，Mg和B中的任一种都具有高浓度。第二高Ga组合物层60比第一高Ga组分层30具有更大的拉伸应变或比第一高Ga组分层30更小的压缩应变。第二高Ga组成层60具有拉伸应变，并且第一高Ga组成层 30具有压缩应变。

2. 发明专利

JP2014096396A Method of forming nitride semiconductor layer 有权
标题翻译：形成氮化物半导体层的方法
公开(公告)号：JP2014096396A
公开(公告)日：2014-05-22
申请号：JP2012207626
申请日：2012-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： HUNG HUNG , SUGIYAMA NAOJI , YOSHIDA GAKUSHI , HIKOSAKA TOSHIKI , HARADA YOSHIYUKI , NUNOUE SHINYA
IPC分类号： H01L29/20 , C23C16/34 , H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812 , H01L31/10 , H01L33/32 , H01S5/343
CPC分类号： H01L21/0254 , H01L21/02458 , H01L21/02505 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/0684 , H01L29/2003 , H01L29/201 , H01L29/207 , H01L29/36 , H01L31/1848 , H01L31/1856 , H01L33/002 , H01L33/0075 , H01L33/12 , H01L33/32 , H01L33/325
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element having reduced dislocation, a nitride semiconductor wafer, and a method of forming a nitride semiconductor layer.SOLUTION: There is provided a semiconductor element including a function layer of a nitride semiconductor. The function layer is provided on a nitride semiconductor layer including a first stack. The first stack is provided on a primary surface of a substrate. The first stack includes a first lower layer, a first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer so as to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer so as to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness.
摘要翻译：要解决的问题：提供具有减少的位错的半导体元件，氮化物半导体晶片和形成氮化物半导体层的方法。解决方案：提供了包括氮化物半导体的功能层的半导体元件。功能层设置在包括第一叠层的氮化物半导体层上。第一堆叠设置在基板的主表面上。第一堆叠包括第一下层，第一中间层和第一上层。第一下层含有第一浓度的Si并具有第一厚度。第一中间层设置在第一下层上以与第一下层接触，含有第二浓度低于第一浓度的Si，并且具有比第一厚度厚的第二厚度。第一上层设置在第一中间层上以与第一中间层接触，含有第三浓度低于第二浓度的Si，并具有第三厚度。

3. 发明专利

JP2014027240A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2014027240A
公开(公告)日：2014-02-06
申请号：JP2012168940
申请日：2012-07-30
申请人： Toshiba Corp , 株式会社東芝
发明人： HUNG HUNG , HARADA YOSHIYUKI , HUANG JONG-IL , KUSHIBE MITSUHIRO , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01S5/343 , H01L33/06 , H01L33/32
CPC分类号： H01S5/3013 , B82Y20/00 , H01L33/32 , H01S5/2009 , H01S5/321 , H01S5/34333
摘要： PROBLEM TO BE SOLVED: To provide a high-efficiency semiconductor light-emitting element.SOLUTION: There is provided a semiconductor light-emitting element including an n-type semiconductor layer, a p-type semiconductor layer, a light-emitting layer, and first and second intermediate layers. The light-emitting layer is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light-emitting layer includes a plurality of barrier layers containing AlInGaN and well layers containing AlInGaN (xw≤xb and yb
摘要翻译：要解决的问题：提供一种高效率的半导体发光元件。解决方案：提供一种半导体发光元件，其包括n型半导体层，p型半导体层，发光层和第一和第二中间层。发光层设置在n型半导体层和p型半导体层之间。发光层包括含有AlInGaN的多个阻挡层和在其间含有AlInGaN（xw≤xb和yb

4. 发明专利

JP2012244152A Semiconductor light-emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：JP2012244152A
公开(公告)日：2012-12-10
申请号：JP2012009159
申请日：2012-01-19
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGIYAMA NAOJI , SATO TAISUKE , ONO HIROSHI , MIKI SATOSHI , SHIODA MICHIYA , HUANG JONG-IL , HUNG HUNG , NUNOUE SHINYA
IPC分类号： H01L33/22 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of improving light extraction efficiency with high reproductive rate.SOLUTION: There is provided a semiconductor light-emitting device 110 comprising a first semiconductor layer 10, a light-emitting layer 30, a second semiconductor layer 20, and a low-refractive-index layer 60. The first semiconductor layer forms a light extraction surface and contains nitride semiconductor crystals. The light-emitting layer is provided on the first semiconductor layer and includes an active layer. The second semiconductor layer is provided on the light-emitting layer. The low-refractive-index layer has a refractive index lower than a refractive index of the first semiconductor layer, partially covers the light extraction surface, and contains crystals formed of a nitride containing Al. An Al content of the first semiconductor layer is less than an Al content of the low-refractive-index layer.
摘要翻译：解决的问题：提供能够以高繁殖率提高光提取效率的半导体发光装置。解决方案：提供了包括第一半导体层10，发光层30，第二半导体层20和低折射率层60的半导体发光器件110.第一半导体层形成光提取表面并且包含氮化物半导体晶体。发光层设置在第一半导体层上并且包括有源层。第二半导体层设置在发光层上。低折射率层的折射率低于第一半导体层的折射率，部分覆盖光提取面，并且含有由含有Al的氮化物形成的晶体。第一半导体层的Al含量低于低折射率层的Al含量。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2014179628A Semiconductor element and nitride semiconductor wafer 有权
标题翻译：半导体元件和氮化物半导体波导
公开(公告)号：JP2014179628A
公开(公告)日：2014-09-25
申请号：JP2014081768
申请日：2014-04-11
申请人： Toshiba Corp , 株式会社東芝
发明人： HUNG HUNG , SUGIYAMA NAOJI , YOSHIDA GAKUSHI , HIKOSAKA TOSHIKI , HARADA YOSHIYUKI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L21/20 , H01L21/205 , H01L21/338 , H01L29/205 , H01L29/207 , H01L29/778 , H01L29/812 , H01L31/10 , H01L33/12 , H01L33/22
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor element with small dislocation and a nitride semiconductor wafer.SOLUTION: There is provided a semiconductor element including a function layer of a nitride semiconductor. The function layer is provided on a nitride semiconductor layer including a first laminated body. The first laminated body is provided on a primary surface of a substrate. The laminated body includes a first lower layer, first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness. The first lower layer includes discontinuous island portions provided on a ground layer to be in contact with the ground layer and containing Si.
摘要翻译：要解决的问题：提供具有小位错的半导体元件和氮化物半导体晶片。解决方案：提供了包括氮化物半导体的功能层的半导体元件。功能层设置在包括第一层叠体的氮化物半导体层上。第一层叠体设置在基板的主表面上。层叠体包括第一下层，第一中间层和第一上层。第一下层含有第一浓度的Si并具有第一厚度。第一中间层设置在与第一下层接触的第一下层上，含有第二浓度低于第一浓度的Si，并且具有比第一厚度厚的第二厚度。第一上层设置在与第一中间层接触的第一中间层上，含有第三浓度低于第二浓度的Si，并具有第三厚度。第一下层包括设置在接地层上并与接地层接触并包含Si的不连续岛部分。

6. 发明专利

JP2014063861A Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：JP2014063861A
公开(公告)日：2014-04-10
申请号：JP2012207623
申请日：2012-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： HUANG JONG-IL , HASHIMOTO REI , SAITO SHINJI , HUNG HUNG , NUNOUE SHINYA
IPC分类号： H01L21/205 , C23C16/34 , H01L21/338 , H01L29/778 , H01L29/812 , H01L33/32 , H01S5/323
CPC分类号： H01L33/0075 , H01L33/007
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which omits a process and has high producibility.SOLUTION: According to an embodiment, a semiconductor device manufacturing method comprises: preparing a substrate part including a base substrate having a first heat expansion coefficient, an intermediate crystal layer which is arranged on the base substrate and has a first grating constant and has a principal surface including first and second regions and an intermediate region between the first and second regions, and a mask layer arranged on the intermediate region; growing in the first and second regions, first and second lower layers each including a semiconductor crystal having a second heat expansion coefficient larger than the first heat expansion coefficient and a second grating constant larger than the first grating constant; growing first and second upper layers each including a semiconductor crystal, from over the first and second lower layers so as to extend over the mask layer and bringing the first and second upper layers into contact with each other on the mask layer; and lowering temperature to separate the first and second upper layers from each other at a border of the first and second upper layers on the mask layer.
摘要翻译：要解决的问题：提供一种省略工艺并具有高可生产性的半导体器件制造方法。解决方案：根据实施例，半导体器件制造方法包括：制备包括具有第一热膨胀系数的基底基板的基板部分，中间晶体层，其布置在所述基底基板上并具有第一光栅常数并且具有包括第一和第二区域的主表面和所述第一和第二区域之间的中间区域以及布置在所述中间区域上的掩模层; 在第一和第二区域中生长，第一和第二下层各自包括具有大于第一热膨胀系数的第二热膨胀系数的半导体晶体和大于第一光栅常数的第二光栅常数; 生长第一和第二上层，每个包括半导体晶体，从第一和第二下层上延伸以在掩模层上延伸并使第一和第二上层在掩模层上彼此接触; 以及降低温度以在掩模层上的第一和第二上层的边界处彼此分离第一和第二上层。

7. 发明专利

JP2013070065A Nitride semiconductor element and method of manufacturing nitride semiconductor element 有权
标题翻译：氮化物半导体元件及制造氮化物半导体元件的方法
公开(公告)号：JP2013070065A
公开(公告)日：2013-04-18
申请号：JP2012234208
申请日：2012-10-23
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIODA MICHIYA , HUNG HUNG , HUANG JONG-IL , YOSHIDA GAKUSHI , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L21/205 , H01L31/10 , H01L33/32 , H01S5/323
CPC分类号： H01L21/0254 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0251 , H01L33/007 , H01L33/12 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality nitride semiconductor element that is formed on a silicon substrate and has reduced crack and dislocation.SOLUTION: There is provided a nitride semiconductor element in which a silicon substrate is removed after forming a ground layer, a stacked intermediate layer, and a function layer on the silicon substrate. The nitride semiconductor element includes the ground layer and the stacked intermediate layer. The ground layer includes an AlN buffer layer and a GaN ground layer. The stacked intermediate layer is provided between the ground layer and the function layer. The stacked intermediate layer includes an AlN intermediate layer, an AlGaN intermediate layer, and a GaN intermediate layer. The AlGaN intermediate layer includes a first step layer that is in contact with the AlN intermediate layer. The Al composition ratio of the first step layer gradually decreases in the direction from the AlN intermediate layer toward the first step layer.
摘要翻译：解决的问题：提供一种制造形成在硅衬底上并具有减少的裂纹和位错的优质氮化物半导体元件的方法。解决方案：提供一种氮化物半导体元件，其中在硅衬底上形成接地层，堆叠中间层和功能层之后去除硅衬底。氮化物半导体元件包括接地层和堆叠的中间层。接地层包括AlN缓冲层和GaN接地层。堆叠的中间层设置在接地层和功能层之间。堆叠的中间层包括AlN中间层，AlGaN中间层和GaN中间层。 AlGaN中间层包括与AlN中间层接触的第一阶梯层。第一阶梯层的Al组成比在从AlN中间层向第一阶梯层的方向逐渐减小。版权所有（C）2013，JPO＆INPIT

8. 发明专利

JP2012244161A Semiconductor light-emitting element, nitride semiconductor wafer, and method of manufacturing nitride semiconductor layer 有权
标题翻译：半导体发光元件，氮化物半导体器件和制造氮化物半导体层的方法
公开(公告)号：JP2012244161A
公开(公告)日：2012-12-10
申请号：JP2012053347
申请日：2012-03-09
申请人： Toshiba Corp , 株式会社東芝
发明人： HUANG JONG-IL , SHIODA MICHIYA , HUNG HUNG , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L33/32 , H01L33/06
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that suppresses the degradation and destruction of a semiconductor layer, a nitride semiconductor wafer, and a method of manufacturing a nitride semiconductor layer.SOLUTION: A semiconductor light-emitting element includes a substrate layer, a first semiconductor layer, a light-emitting part, and a second semiconductor layer. The substrate layer is formed on a silicon substrate. The first semiconductor layer is provided on the substrate layer, contains a nitride semiconductor, and has a first conductivity type. The light-emitting part is provided above the first semiconductor layer and includes a plurality of barrier layers and well layers that are provided between the adjacent plurality of barrier layers and contain GaInN. The second semiconductor layer is provided on the light-emitting part, contains a nitride semiconductor, and has a second conductivity type. The substrate layer has a thickness of 2 nm or more and 100 nm or less and includes an Al-containing intermediate layer that contains a nitride semiconductor containing Al. The Al-containing intermediate layer has an irregularity portion provided on a surface at the first semiconductor layer side, and the surface roughness Ra of the irregularity portion ranges from 1 nm or more to 10 nm or less.
摘要翻译：解决的问题：提供抑制半导体层，氮化物半导体晶片的劣化和破坏的半导体发光元件以及氮化物半导体层的制造方法。解决方案：半导体发光元件包括衬底层，第一半导体层，发光部分和第二半导体层。衬底层形成在硅衬底上。第一半导体层设置在基板层上，含有氮化物半导体，并具有第一导电型。发光部分设置在第一半导体层之上，并且包括设置在相邻的多个势垒层之间并包含GaInN的多个势垒层和阱层。第二半导体层设置在发光部上，含有氮化物半导体，具有第二导电型。衬底层的厚度为2nm以上且100nm以下，并且包括含有含有Al的氮化物半导体的含Al中间层。含Al中间层具有设置在第一半导体层侧的表面上的凹凸部，凹凸部的表面粗糙度Ra为1nm以上至10nm以下。版权所有（C）2013，JPO＆INPIT

9. 发明专利

JP2017085157A 半導体ウェーハ、半導体素子及び窒化物半導体層の製造方法有权
公开(公告)号：JP2017085157A
公开(公告)日：2017-05-18
申请号：JP2017004036
申请日：2017-01-13
申请人：株式会社東芝 , Toshiba Corp
发明人： HARADA YOSHIYUKI , HIKOSAKA TOSHIKI , YOSHIDA HISASHI , HUNG HUNG , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L21/205 , C30B29/40 , H01L33/12 , H01L33/32
摘要：【課題】転位密度が低い半導体ウェーハ及び半導体素子を提供する。【解決手段】実施形態の半導体ウェーハは、基板、AlNバッファ層、下地層、第1高Ga組成層、高Al組成層、低Al組成層、中間部及び第2高Ga組成層を含む。AlNバッファ層は基板の上に設けられる。下地層はAlNバッファ層の上に設けられる。第1高Ga組成層は下地層の上に設けられる。高Al組成層は第1高Ga組成層の上に設けられる。低Al組成層は高Al組成層の上に設けられる。中間部は低Al組成層の上に設けられる。中間部はSi、Mg及びBのいずれかの不純物の濃度が高い。第2高Ga組成層は中間部の上に設けられる。第2高Ga組成層は、第1高Ga組成層の引っ張り歪みよりも大きい引っ張り歪み及び前記高Ga組成層の圧縮歪みよりも小さい圧縮歪みのいずれかを有する、または、第2高Ga組成層は引っ張り歪みを有し第1高Ga組成層は圧縮歪みを有する。【選択図】図1

10. 发明专利

JP2013084957A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013084957A
公开(公告)日：2013-05-09
申请号：JP2012222976
申请日：2012-10-05
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIDA GAKUSHI , TACHIBANA KOICHI , SHIODA MICHIYA , HIKOSAKA TOSHITERU , HUANG JONG-IL , HUNG HUNG , SUGIYAMA NAOJI , NUNOUE SHINYA
IPC分类号： H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a highly-efficient semiconductor light-emitting element in which defects are suppressed.SOLUTION: According to an embodiment, there is provided a semiconductor light-emitting element comprising: a first semiconductor layer of a nitride semiconductor of a first conductivity type formed on a buffer layer including a nitride semiconductor formed on a silicon substrate; a light-emitting layer of a nitride semiconductor which is provided on the first semiconductor layer and emits lights of a peak wavelength of 440 nanometers or longer and in which an average In composition ratio is higher than or equal to 0.05; and a second semiconductor layer of a nitride semiconductor of a second conductivity type provided on the light-emitting layer. A tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is less than or equal to 5×10/cm. A lattice mismatch rate between the first semiconductor layer and the light-emitting layer is less than or equal to 0.11%. The silicon substrate is removed.
摘要翻译：解决的问题：提供抑制缺陷的高效半导体发光元件。解决方案：根据实施例，提供了一种半导体发光元件，包括：形成在包括形成在硅衬底上的氮化物半导体的缓冲层上的第一导电类型的氮化物半导体的第一半导体层; 所述氮化物半导体的发光层设置在所述第一半导体层上，并且发射峰值波长为440纳米以上且其平均In组成比高于或等于0.05的光; 以及设置在发光层上的第二导电类型的氮化物半导体的第二半导体层。对第一半导体层施加拉伸应变。第一半导体层的边缘位错密度小于或等于5×10 / SP SP =“POST”> 2 。第一半导体层和发光层之间的晶格失配率小于或等于0.11％。去除硅衬底。版权所有（C）2013，JPO＆INPIT

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