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31. 发明授权

US07526747B2 Inspection method and inspection system using charged particle beam 失效
标题翻译：使用带电粒子束的检查方法和检查系统
公开(公告)号：US07526747B2
公开(公告)日：2009-04-28
申请号：US11165250
申请日：2005-06-24
申请人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
发明人： Hidetoshi Nishiyama , Mari Nozoe , Hiroyuki Shinada
IPC分类号： G06F17/50
CPC分类号： G01N23/203 , G01N21/9501 , G01N23/225 , G01N2021/95615 , G01R31/307 , G01R31/311 , G06T7/001 , G06T2207/30148 , H01J37/268 , H01J37/28 , H01J2237/2817
摘要： Secondary electrons and back scattered electrons generated by irradiating a wafer to be inspected such as a semiconductor wafer with a charged particle beam are detected by a detector. A signal proportional to the number of detected electrons is generated, and an inspection image is formed on the basis of the signal. On the other hand, in consideration of a current value and irradiation energy of a charged particle beam, an electric field on the surface of the inspection wafer, emission efficiency of the secondary electrons and back scattered electrons, and the like, an electric resistance and an electric capacitance are determined so as to coincide with those in the inspection image. In a state where a difference between a resistance value in a normal portion and a resistance value in a defective portion is sufficiently increased by using the charging generated by the irradiation of electron beams, an inspection is conducted to thereby detect a defect.
摘要翻译：通过检测器检测通过用带电粒子束照射待检查的晶片（例如半导体晶片）产生的二次电子和背散射电子。产生与检测到的电子数成比例的信号，并且基于该信号形成检查图像。另一方面，考虑到带电粒子束的电流值和照射能量，检查晶片的表面上的电场，二次电子和背散射电子的发射效率等，电阻和电容量被确定为与检查图像中的电容重合。通过使用通过电子束的照射产生的充电来充分地增加正常部分中的电阻值与缺陷部分中的电阻值之间的差异的状态，进行检查，从而检测缺陷。

32. 发明授权

US06583413B1 Method of inspecting a circuit pattern and inspecting instrument 有权
标题翻译：检查电路图案和检查仪器的方法
公开(公告)号：US06583413B1
公开(公告)日：2003-06-24
申请号：US09652606
申请日：2000-08-30
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： G01N2300
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.
摘要翻译：电路图形检查装置包括用于对样品照射电子束的电子光学系统，电子束偏转器，用于从样品检测二次带电粒子的检测器，以及用于在第一模式和第二模式之间切换的模式设置单元模式。在第一模式中电子束电流比第二模式中的电子束电流大，并且在第一模式中电子束扫描速度高于第二模式。电路图形检查装置被配置为使得首先在第一模式中观察样本，然后基于在第一模式中由检测器的输出产生的图像数据来选择样本上的特定位置，然后选择特定位置在第二模式下观察样品。

33. 发明授权

US06759655B2 Inspection method, apparatus and system for circuit pattern 失效
标题翻译：检查方法，电路图案的装置和系统
公开(公告)号：US06759655B2
公开(公告)日：2004-07-06
申请号：US09832220
申请日：2001-04-11
申请人： Yasuhiko Nara , Kazuhisa Machida , Mari Nozoe , Hiroshi Morioka , Yasutsugu Usami , Takashi Hiroi , Kohichi Hayakawa
发明人： Yasuhiko Nara , Kazuhisa Machida , Mari Nozoe , Hiroshi Morioka , Yasutsugu Usami , Takashi Hiroi , Kohichi Hayakawa
IPC分类号： G01N23225
CPC分类号： G03F7/70616 , G03F1/84 , G03F7/7065 , G06T7/001 , G06T2207/30141 , H01J37/226 , H01J2237/082 , H01J2237/2817 , H01L22/12
摘要： Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.
摘要翻译：设置用于电路图案的检查方法，装置和系统，其中当通过使用通过照射白光形成的图像，激光束或带电粒子束来检查精细电路图案的情况下需要各种条件时，其运行效率可以提高。显示检查对象基板的检查对象区域，并且指定区域的指定地图画面和光学显微镜或电子束显微镜的图像并行显示，从而能够将缺陷分布和缺陷图像同时看到。检查条件的项目名称和显示，输入或指示检查条件内容的画面被整合，这些内容与图像平面重叠，层叠显示，并且所有项目名称均以选项卡格式在内容的图片平面的上部。当点击所需的项目名称时，切换画面并显示与点击的项目名称对应的内容。

34. 发明授权

US06493082B2 Inspection method, apparatus and system for circuit pattern 失效
公开(公告)号：US06493082B2
公开(公告)日：2002-12-10
申请号：US10116134
申请日：2002-04-05
申请人： Yasuhiko Nara , Kazuhisa Machida , Mari Nozoe , Hiroshi Morioka , Yasutsugu Usami , Takashi Hiroi , Kohichi Hayakawa , Maki Ito
发明人： Yasuhiko Nara , Kazuhisa Machida , Mari Nozoe , Hiroshi Morioka , Yasutsugu Usami , Takashi Hiroi , Kohichi Hayakawa , Maki Ito
IPC分类号： G01B1100
CPC分类号： G03F7/70616 , G03F1/84 , G03F7/7065 , G06T7/001 , G06T2207/30141 , H01J37/226 , H01J2237/082 , H01J2237/2817 , H01L22/12
摘要： Inspection method, apparatus, and system for a circuit pattern, in which when various conditions which are necessary in case of inspecting a fine circuit pattern by using an image formed by irradiating white light, a laser beam, or a charged particle beam are set, its operating efficiency can be improved. An inspection target region of an inspection-subject substrate is displayed, and a designated map picture plane and an image of an optical microscope or an electron beam microscope of a designated region are displayed in parallel, thereby enabling a defect distribution and a defect image to be simultaneously seen. Item names of inspecting conditions and a picture plane to display, input, or instruct the contents of the inspecting conditions are integrated, those contents are overlapped to the picture plane and layer-displayed, and all of the item names are displayed in parallel in a tab format in the upper portion of the picture plane of the contents. When a desired item name is clicked, the picture plane is switched and the contents corresponding to the clicked item name are displayed.

35. 发明申请

US20060243908A1 Method of inspecting a circuit pattern and inspecting instrument 失效
标题翻译：检查电路图案和检查仪器的方法
公开(公告)号：US20060243908A1
公开(公告)日：2006-11-02
申请号：US11452989
申请日：2006-06-15
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： G21K7/00
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.
摘要翻译：使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

36. 发明授权

US06797954B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06797954B2
公开(公告)日：2004-09-28
申请号：US10400588
申请日：2003-03-28
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： H01J37244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

37. 发明授权

US06476390B1 Method and apparatus for inspecting integrated circuit pattern using a plurality of charged particle beams 有权
标题翻译：使用多个带电粒子束检查集成电路图案的方法和装置
公开(公告)号：US06476390B1
公开(公告)日：2002-11-05
申请号：US09646281
申请日：2000-09-15
申请人： Hisaya Murakoshi , Yusuke Yajima , Hiroyuki Shinada , Mari Nozoe , Atsuko Takafuji , Kaoru Umemura , Masaki Hasegawa , Katsuhiro Kuroda
发明人： Hisaya Murakoshi , Yusuke Yajima , Hiroyuki Shinada , Mari Nozoe , Atsuko Takafuji , Kaoru Umemura , Masaki Hasegawa , Katsuhiro Kuroda
IPC分类号： G01N2300
CPC分类号： H01J37/28 , G01N23/225 , G01N23/2255 , H01J2237/16 , H01J2237/18 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： In a pattern inspection device of the present invention having at least three electron-optical systems, detection signals approximately simultaneously obtained from identical circuit patterns are compared with each other. Further, areas around plural electron sources can be maintained at high degrees of vacuum by evacuating an electron gun chamber mounted with plural electron guns independently of a sample chamber. Further, electric fields and magnetic fields are confined in each electron-optical system by a shield electrode which makes it possible to evacuate an electron beam path to a high degree of vacuum, and at the same time, secondary electrons and reflected electrons are detected in the same electron-optical system by setting the samples to a negative voltage and accelerating secondary electrons and reflected electrons toward the electron source side in the direction of the electron beam axis. Thus, defect determination in pattern inspection is performable substantially simultaneously, and at the same time, the throughput of the inspections is improvable in proportion to the number of the electron-optical systems. Further, three or more electron sources are operable in a stable manner in high vacuum states, and signals from closely arranged electron-optical systems are detectable with high accuracy, and accurate inspections are performable.
摘要翻译：在具有至少三个电子 - 光学系统的本发明的图案检查装置中，将从相同电路图形大致同时获得的检测信号彼此进行比较。此外，通过与安装有多个电子枪的电子枪室独立于样品室排出，可以将多个电子源周围的区域保持在高真空度。此外，通过屏蔽电极将电场和磁场限制在每个电子 - 光学系统中，该屏蔽电极使得可以将电子束路径排出到高真空度，同时二次电子和反射电子被检测到相同的电子 - 光学系统通过将样品设置为负电压并且在电子束轴的方向上将二次电子和反射电子加速朝向电子源侧。因此，图案检查中的缺陷确定可以基本上同时执行，并且同时，检查的吞吐量可以与电子 - 光学系统的数量成比例地改善。此外，三个或更多个电子源可以以高真空状态稳定地操作，并且来自紧密排列的电子 - 光学系统的信号可以高精度地检测，并且可以进行准确的检查。

38. 发明授权

US07397031B2 Method of inspecting a circuit pattern and inspecting instrument 失效
标题翻译：检查电路图案和检查仪器的方法
公开(公告)号：US07397031B2
公开(公告)日：2008-07-08
申请号：US11452989
申请日：2006-06-15
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： H01J37/28
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.
摘要翻译：使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

39. 发明授权

US06979823B2 Patterned wafer inspection method and apparatus therefor 有权
标题翻译：图案化晶圆检查方法及其设备
公开(公告)号：US06979823B2
公开(公告)日：2005-12-27
申请号：US10865850
申请日：2004-06-14
申请人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
发明人： Hiroyuki Shinada , Yusuke Yajima , Hisaya Murakoshi , Masaki Hasegawa , Mari Nozoe , Atsuko Takafuji , Katsuya Sugiyama , Katsuhiro Kuroda , Kaoru Umemura , Yasutsugu Usami
IPC分类号： G01N23/20 , G01N23/225 , G01Q20/02 , G01Q30/02 , G01Q30/04 , G01Q30/20 , H01J37/26 , H01L21/027 , H01L21/66 , H01J37/244
CPC分类号： H01J37/26 , G01N23/225 , H01J37/244 , H01J37/29 , H01J2237/20228 , H01J2237/221 , H01J2237/2447 , H01J2237/24475 , H01J2237/24485 , H01J2237/24592 , H01J2237/2482
摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.
摘要翻译：具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

40. 发明授权

US07098455B2 Method of inspecting a circuit pattern and inspecting instrument 有权
公开(公告)号：US07098455B2
公开(公告)日：2006-08-29
申请号：US10404451
申请日：2003-04-02
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： H01J37/28
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.

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